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1. 发明授权

US07476618B2 Selective formation of metal layers in an integrated circuit 有权
标题翻译：在集成电路中选择性形成金属层
公开(公告)号：US07476618B2
公开(公告)日：2009-01-13
申请号：US11254071
申请日：2005-10-18
申请人： Olli V. Kilpelä , Wonyong Koh , Hannu A. Huotari , Marko Tuominen , Miika Leinikka
发明人： Olli V. Kilpelä , Wonyong Koh , Hannu A. Huotari , Marko Tuominen , Miika Leinikka
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , C23C16/45525 , H01L21/28562 , H01L21/32051 , H01L21/76814 , H01L21/76834 , H01L21/76843 , H01L21/76849
摘要： A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The method comprises contacting the exposed copper surface with a vapor phase compound of a noble metal and selectively forming a layer of the noble metal on the exposed copper surface, either by a copper replacement reaction or selective deposition (e.g., ALD or CVD) of the noble metal.
摘要翻译：一种用于增强铜互连和/或触点的可靠性的方法，例如暴露铜的顶表面的通孔的底部，或刚好在CMP之后的铜线的顶部。该方法包括使暴露的铜表面与贵金属的气相化合物接触，并通过铜置换反应或选择性沉积（例如，ALD或CVD）选择性地在暴露的铜表面上形成贵金属层贵金属。

2. 发明授权

US08545936B2 Methods for forming carbon nanotubes 有权
标题翻译：形成碳纳米管的方法
公开(公告)号：US08545936B2
公开(公告)日：2013-10-01
申请号：US12058565
申请日：2008-03-28
申请人： Hannu A. Huotari , Suvi P. Haukka
发明人： Hannu A. Huotari , Suvi P. Haukka
IPC分类号： B05D7/00
CPC分类号： C30B29/602 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02
摘要： Methods of forming a roughened metal surface on a substrate for nucleating carbon nanotube growth, and subsequently growing carbon nanotubes are provided. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may then be used as nucleation points for initiating carbon nanotube growth. The carbon nanotubes are grown in the same process chamber (in-situ) as the formation of the three dimensional metal islands without exposing the substrate to air.
摘要翻译：提供了在用于成核碳纳米管生长的基底上形成粗糙金属表面，随后生长碳纳米管的方法。在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。然后可以将粗糙化的金属表面用作引发碳纳米管生长的成核点。碳纳米管在与三维金属岛的形成相同的处理室（原地）生长，而不将基板暴露于空气中。

3. 发明申请

US20090246367A1 METHODS FOR FORMING CARBON NANOTUBES 有权
标题翻译：形成碳纳米管的方法
公开(公告)号：US20090246367A1
公开(公告)日：2009-10-01
申请号：US12058565
申请日：2008-03-28
申请人： Hannu A. Huotari , Suvi P. Haukka
发明人： Hannu A. Huotari , Suvi P. Haukka
IPC分类号： B05D7/00
CPC分类号： C30B29/602 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02
摘要： Methods of forming a roughened metal surface on a substrate for nucleating carbon nanotube growth, and subsequently growing carbon nanotubes are provided. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may then be used as nucleation points for initiating carbon nanotube growth. The carbon nanotubes are grown in the same process chamber (in-situ) as the formation of the three dimensional metal islands without exposing the substrate to air.
摘要翻译：提供了在用于成核碳纳米管生长的基底上形成粗糙金属表面，随后生长碳纳米管的方法。在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。然后可以将粗糙化的金属表面用作引发碳纳米管生长的成核点。碳纳米管在与三维金属岛的形成相同的处理室（原地）生长，而不将基板暴露于空气中。

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