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    • 31. 发明授权
    • Connection layer forming method
    • 连接层成型方法
    • US5795825A
    • 1998-08-18
    • US627511
    • 1996-04-08
    • Yukiyasu SuganoJunichi Sato
    • Yukiyasu SuganoJunichi Sato
    • H01L21/28H01L21/311H01L21/3205H01L21/768H01L23/52H01L21/465
    • H01L21/311H01L21/76877
    • A method of forming a connection layer by filling an Al-based material wherein planarization of an entire surface of a substrate is achieved. 1 Al-based material 10 is deposited and filled in concave sections 4,8 formed in a substrate 1 under a high temperature, and then the surface of the Al-base material is polished with unwoven cloth or an etching liquid. 2 In a lithography process using an alignment mark for alignment on a substrate, an Al-based material is deposited and filled in a concave section in a portion other than the alignment mark for alignment under a high temperature, and then the surface of the Al-based material is polished. 3 In a process to deposit an Al-based material on a substrate and then planarize the surface of the Al-based material by polishing, an antireflection film is deposited on the Al-based material after the Al-based material is planarized.
    • 通过填充Al基材料形成连接层的方法,其中实现了基板的整个表面的平坦化。 + E,crc 1 + EE Al基材料10沉积并填充在高温下形成在基板1中的凹部4,8中,然后用无纺布或蚀刻来研磨Al基材料的表面 液体。 + E,crc 2 + EE在使用对准标记在基板上进行取向的光刻工艺中,Al基材料沉积并填充在除对准标记之外的部分中的凹部中,以在高温下进行取向,并且 然后抛光Al基材料的表面。 + E,crc 3 + EE在将Al基材料沉积在基板上然后通过抛光使Al基材料的表面平坦化的方法中,在Al基材料上沉积抗反射膜 材料平面化。
    • 32. 发明授权
    • Process for detecting fine particles
    • 检测细颗粒的方法
    • US5628954A
    • 1997-05-13
    • US457494
    • 1995-06-01
    • Junichi Sato
    • Junichi Sato
    • G01N21/88G01N21/94G01N21/956H01L21/304H01L21/306H01L21/66
    • H01L21/02043G01N21/94H01L21/02046Y10S134/902
    • A process for detecting fine particles includes the steps of forming a sublimable thin film on an essential surface of a wafer on which fine particles are present, irradiating laser beam at the surface of the wafer, receiving a reflected beam from the surface which is scattered by the presence of the fine particles, and detecting the particles from the received scattered beam. The process may further include the step of accomplishing an etchback against the sublimable film to partially retain the sublimable film adjacent the surface of the fine particles. The film can be prepared from one or a mixture of gas including free sulfur generatable gas under discharge-dissociation conditions. Sulfur compounds or polythiazyl are preferable. Alternatively, the film can be made of a condensed film of organic solvent vapor. The sublimable film is sublimed by heating after the step of detecting the fine particles.
    • 检测微粒的方法包括以下步骤:在存在微粒的晶片的主表面上形成升华性薄膜,在晶片的表面照射激光束,从表面散射的反射光束 微粒的存在,并从接收的散射光束中检测出粒子。 该方法还可以包括对可升华膜进行回蚀以部分地保持邻近细颗粒表面的可升华膜的步骤。 该膜可以在放电解离条件下由一种或其中包括游离硫可生成气体的气体混合物制备。 硫化合物或聚噻唑是优选的。 或者,膜可以由有机溶剂蒸气的冷凝膜制成。 通过在检测细颗粒的步骤之后通过加热使升华膜升华。
    • 33. 发明授权
    • Process for removing fine particles
    • 去除细颗粒的方法
    • US5496506A
    • 1996-03-05
    • US121366
    • 1993-09-15
    • Junichi Sato
    • Junichi Sato
    • G01N21/88G01N21/94G01N21/956H01L21/304H01L21/306H01L21/66
    • H01L21/02043G01N21/94H01L21/02046Y10S134/902
    • A process for detecting fine particles includes the steps of forming a sublimable thin film on an essential surface of a wafer on which fine particles are present, irradiating laser beam at the surface of the wafer, receiving a reflected beam from the surface which is scattered by the presence of the fine particles, and detecting the particles from the received scattered beam. The process may further include the step of accomplishing an etchback against the sublimable film to partially retain the sublimable film adjacent the surface of the fine particles. The film can be prepared from one or a mixture of gases including free sulfur generatable gas under discharge-dissociation conditions. Sulfur compounds or polythiazyl are preferable. Alternatively, the film can be made of a condensed film of organic solvent vapor. The sublimable film is sublimed by heating after the step of detecting the fine particles.
    • 检测微粒的方法包括以下步骤:在存在微粒的晶片的主表面上形成升华性薄膜,在晶片的表面照射激光束,从表面散射的反射光束 微粒的存在,并从接收的散射光束中检测出粒子。 该方法还可以包括对可升华膜进行回蚀以部分地保持邻近细颗粒表面的可升华膜的步骤。 该膜可以在放电解离条件下由一种或多种气体(包括游离的可硫化气体)制备。 硫化合物或聚噻唑是优选的。 或者,膜可以由有机溶剂蒸气的冷凝膜制成。 通过在检测细颗粒的步骤之后通过加热使升华膜升华。
    • 35. 发明授权
    • 5-substituted-2,4-diphenylpyrimidine derivatives
    • 5-取代-2,4-二苯基嘧啶衍生物
    • US5270467A
    • 1993-12-14
    • US972806
    • 1992-11-06
    • Junichi SatoYuzuru SanemitsuShinichi KawamuraNobuaki MitoTatsuhiro HamadaRyo Yoshida
    • Junichi SatoYuzuru SanemitsuShinichi KawamuraNobuaki MitoTatsuhiro HamadaRyo Yoshida
    • A01N43/54C07C323/29C07C329/06C07D239/34C07D239/38
    • C07D239/38A01N43/54C07C323/29C07C329/06C07D239/34
    • A compound is disclosed having the formula: ##STR1## wherein R.sup.1 represents a halo-(C.sub.1 to C.sub.6)-alkoxy group at the ortho or meta position, R.sup.2 and R.sup.3, which may be either the same or different, each represents a hydrogen atom, a halogen atom, a (C.sub.1 to C.sub.2)-alkyl group, a halo-(C.sub.1 to C.sub.2)-alkyl group, a (C.sub.1 to C.sub.2)-alkoxy group, a nitro group, a (C.sub.1 to C.sub.2)-alkylthio group, a halo-(C.sub.1 to C.sub.2)-alkylthio group or a halo-((C.sub.1 to C.sub.2)-alkoxy group, provided that both of R.sup.2 and R.sup.3, if each representing a substituent other than a hydrogen atom, are not at the ortho position for the pyrimidine ring at the same time, and W.sup.1 represents a methanesulfonyl group, or a methylthio group; provided that when W.sup.1 is a methylthio group, R.sup.1, R.sup.2 and R.sup.3 are R.sup.11, R.sup.22 and R.sup.33 wherein R.sup.11 represents a halo-(C.sub.1 to C.sub.6)-alkoxy group at the ortho or meta position, R.sup.22 and R.sup.33, which may be either the same or different, each represents a hydrogen atom, a halogen atom, a (C.sub.1 to C.sub.2)-alkyl group, a halo-(C.sub.1 to C.sub.2)-alkyl group, a (C.sub.1 to C.sub.2)-alkoxy group, or a halo-(C.sub.1 to C.sub.2)-alkoxy group, and both of R.sup.22 and R.sup.33, if each representing a substituent other than a hydrogen atom, are not at the ortho position for the pyrimidine ring at the same time.
    • 公开了具有下式的化合物:其中R1表示邻位或间位的卤代(C1-C6) - 烷氧基,R2和R3可以相同或不同,各自表示 卤素原子,(C1〜C2) - 烷基,卤代(C1〜C2) - 烷基,(C1〜C2) - 烷氧基,硝基,(C1〜C2) (C 1〜C 2) - 烷硫基或卤代((C 1〜C 2) - 烷氧基),条件是如果各自表示除氢原子以外的取代基,则R2和R3均不为 同时在嘧啶环的邻位,W1表示甲磺酰基或甲硫基;条件是当W1是甲硫基时,R1,R2和R3是R11,R22和R33,其中R11表示卤代 - 邻位或间位的(C1-C6) - 烷氧基可以相同或不同,分别表示氢原子,卤原子,(C1-C2) - 烷基, 卤代(C 1〜C 2) - 烷基 (C1〜C2) - 烷氧基或卤代(C1〜C2) - 烷氧基,R22和R33均为氢原子以外的取代基时,不在邻位 嘧啶环同时进行。
    • 37. 发明授权
    • Apparatus for polishing
    • 抛光装置
    • US5246525A
    • 1993-09-21
    • US904507
    • 1992-06-25
    • Junichi Sato
    • Junichi Sato
    • B24B37/00B24B37/04B24B57/02H01L21/304H01L21/306H01L21/3105
    • H01L21/31053B24B37/04B24B57/02
    • An apparatus for polishing a substrate is composed of a polishing plate having a pad on the surface thereof, a substrate retainer to retain the substrate being faced with exposed surface of the pad, allowing the exposed surface of the substrate to contact the surface of the pad, a slurry supply means for supplying slurry for polishing the substrate toward the surface of the pad, and a controlling means for controlling the supply amount of the slurry on the desired position of the surface of the pad. The controlling means includes a plurality of slurry supply ports concentrically located on the pad through the polishing plate. The slurry supply ports may be sparsely arranged, or alternatively, the diameter of the slurry supply ports may be gradually enlarged, according to getting close the slurry supply ports located adjacent the circumference portion of the pad from that located adjacent the center portion thereof. The controlling means may be arranged to independently supply a desired amount of the slurry from the slurry supply means to the desired positions of the pad.
    • 用于抛光基板的装置由其表面上具有焊盘的抛光板,保持基板的基板保持器组成,该基板保持基板的暴露表面,允许基板的暴露表面接触焊盘的表面 用于向衬垫的表面供给用于抛光衬底的浆料的浆料供给装置,以及用于控制在衬垫表面的所需位置上的浆料的供给量的控制装置。 控制装置包括通过抛光板同心地位于焊盘上的多个浆料供给口。 浆料供给口可以稀疏地布置,或者可选地,浆料供给口的直径可以逐渐扩大,这是因为靠近垫的圆周部分邻近其中心部分定位的浆料供应口。 控制装置可以被布置成独立地将所需量的浆料从浆料供应装置供应到垫的期望位置。
    • 39. 发明授权
    • Method of filling a recess flat with a material by a bias ECR-CVD process
    • 通过偏压ECR-CVD工艺用材料填充凹陷的方法
    • US5182221A
    • 1993-01-26
    • US714235
    • 1991-06-12
    • Junichi Sato
    • Junichi Sato
    • H01L21/76H01L21/31H01L21/316H01L21/762
    • H01L21/02164H01L21/022H01L21/02208H01L21/02211H01L21/02274H01L21/31608H01L21/76229Y10S148/025Y10S148/026Y10S148/043Y10S148/118Y10S148/169
    • A method of filling a recess so that it is flat with a material by a bias ECR-CVD process is capable of depositing the recess with the material without resulting in the increase in the aspect ratio of the recess with the progress of the deposition process and without forming any voids in the material filling up the recess. A method in accordance with the present invention is characterized in that the bias ECR-CVD process is controlled so as to meet a condition expressed by: R=2y/x, where R is the deposition rate ratio, namely, the ratio of a vertical deposition rate at which the material is deposited on the vertical side surface of the recess to a deposition rate at which the material deposited on the horizontal bottom surface of the recess, x is the width of the recess and y is the depth of the recess. In another method of filling a recess flat with a material by a bias ECR-CVD process in accordance with the present invention alternately a deposition cycle using a source gas containing a silicon-containing gas and a deposition cycle using a source gas containing a silicon hydride to obviate the adverse influence of a layer of the material formed by the deposition process using the source gas containing a silicon-containing organic gas and containing carbon on the performance of the device are used.
    • 通过偏压ECR-CVD工艺填充凹陷以使其与材料平坦的方法能够与材料沉积凹槽,而不会随着沉积过程的进行而增加凹部的纵横比, 而不会在填充凹槽的材料中形成任何空隙。 根据本发明的方法的特征在于,控制偏压ECR-CVD工艺以满足以下表达的条件:R = 2y / x,其中R是沉积速率比,即垂直 将材料沉积在凹槽的垂直侧表面上的沉积速率到沉积在凹槽的水平底表面上的材料的沉积速率,x是凹部的宽度,y是凹部的深度。 在根据本发明的通过偏压ECR-CVD工艺填充具有材料的凹部的另一种方法中,交替地使用包含含硅气体的源气体和使用含有氢化硅的源气体的沉积循环的沉积循环 为了消除使用包含含硅有机气体并含有碳的源气体的沉积工艺形成的材料层对器件的性能的不利影响。
    • 40. 发明授权
    • Dial plate structure and watch
    • 表盘结构和表
    • US08717855B2
    • 2014-05-06
    • US13597927
    • 2012-08-29
    • Junichi SatoShunya Shiraishi
    • Junichi SatoShunya Shiraishi
    • G04B19/06
    • G04B19/065G04B19/087
    • A dial plate structure includes first and second dial plates and a rotary indicator. The first dial plate has a first opening or a first cutout. The second dial plate is arranged under the first dial plate and has a plurality of function display portions exposed through the opening or the cutout. The rotary indicator is arranged between the first and second dial plates and has a function indicator to selectively indicate one of the function display portions by rotation. The rotary indicator is partially exposed through the opening or the cutout. The rotary indicator has, on the surface thereof, a plurality of index markers respectively corresponding to the function display portions. The first dial plate has a second opening or a second cutout to expose one of the index markers when the function indicator indicates one of the function display portions corresponding to the indicated function display portion.
    • 表盘结构包括第一和第二拨盘和旋转指示器。 第一刻度盘具有第一开口或第一切口。 第二表盘布置在第一拨盘下方,并且具有通过开口或切口暴露的多个功能显示部。 旋转指示器布置在第一和第二表盘之间,并且具有功能指示器,以通过旋转来选择性地指示功能显示部分之一。 旋转指示器通过开口或切口部分露出。 旋转指示器在其表面上分别对应于功能显示部分的多个索引标记。 当功能指示符指示与所指示的功能显示部分相对应的功能显示部分之一时,第一刻度盘具有第二开口或第二切口以暴露索引标记之一。