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31. 发明申请

US20110024761A1 INTERCONNECTION STRUCTURE, A THIN FILM TRANSISTOR SUBSTRATE, AND A MANUFACTURING METHOD THEREOF, AS WELL AS A DISPLAY DEVICE 有权
标题翻译：互连结构，薄膜晶体管基板及其制造方法，作为显示器件
公开(公告)号：US20110024761A1
公开(公告)日：2011-02-03
申请号：US12936572
申请日：2009-04-17
申请人： Nobuyuki Kawakami , Mototaka Ochi , Aya Miki , Shinya Morita , Yoshihiro Yokota , Shinya Fukuma , Hiroshi Goto
发明人： Nobuyuki Kawakami , Mototaka Ochi , Aya Miki , Shinya Morita , Yoshihiro Yokota , Shinya Fukuma , Hiroshi Goto
IPC分类号： H01L33/16 , H01L21/20
CPC分类号： H01L21/26506 , H01L21/2236 , H01L21/76829 , H01L21/76838 , H01L27/124 , H01L29/458 , H01L29/66575 , H01L2924/0002 , H01L2924/00
摘要： Provided is a direct contact technology by which a barrier metal layer between an Al alloy interconnection composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy interconnection can be directly and surely connected to the semiconductor layer within a wide process margin. In an interconnection structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al—Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen, carbon or fluorine contained in the (N, C, F) layer is bonded with Si contained in the semiconductor layer.
摘要翻译：提供了一种直接接触技术，通过该技术可以消除由纯Al或Al合金构成的Al合金互连与半导体层之间的阻挡金属层，并且Al合金互连可以在宽的范围内直接且可靠地连接到半导体层过程保证金在互连结构中，从衬底侧依次从衬底上提供由纯Al或Al合金构成的半导体层和Al合金膜。包含选自由氮，碳和氟组成的组中的至少一种元素和包含Al和Si的Al-Si扩散层的（N，C，F）层的多层结构按此顺序包括从衬底侧在半导体层和Al合金膜之间。（N，C，F）层中所含的至少一种元素即氮，碳或氟与包含在半导体层中的Si键合。

32. 发明申请

US20100031758A1 ANALYTICAL SAMPLE DRYING METHOD AND DRYING APPARATUS 有权
标题翻译：分析样品干燥方法和干燥装置
公开(公告)号：US20100031758A1
公开(公告)日：2010-02-11
申请号：US12449869
申请日：2008-02-29
申请人： Hiroyuki Sakai , Shintaro Komatani , Yoshihiro Yokota
发明人： Hiroyuki Sakai , Shintaro Komatani , Yoshihiro Yokota
IPC分类号： G01N1/44 , G01N33/24
CPC分类号： G01N1/40 , G01N1/4022 , G01N33/20 , G01N33/24
摘要： A soil for metal analysis having a high water content of 40% or more is dried up to 20% or less in water content within a short period of time.A filter paper 5 is laid over an inner bottom surface plate 2 of a nutsche 1. Powder of a super absorbent polymer 6 is uniformly spread (filled) on an upper surface thereof. Further, another filter paper 7 is laid thereon. A soil sample with a high water content is packed on an upper surface thereof, thereupon carrying out predrying to approximately 30% in water content. After that, the predried soil sample is added with ethanol, stirred and received in a receiving pan 38. The receiving pan 38 is arranged in a drying chamber 37. Water is supplied by a syringe 43 to a reaction vessel 42 having been filled with calcium oxide or barium oxide, thereby reacting calcium oxide or barium oxide with water. The receiving pan 38 is heated by a reaction heat generated at that moment, thereupon carrying out postdrying to make the water content 20% or less.
摘要翻译：将含水量高达40％以上的金属分析用土壤在短时间内干燥至含水量的20％以下。将滤纸5放置在螺母1的内底板2上。超吸收性聚合物6的粉末在其上表面上均匀地铺展（填充）。此外，在其上铺设另一个滤纸7。具有高含水量的土壤样品被填充在其上表面上，然后预干燥约30％的含水量。之后，将预干燥的土壤样品加入乙醇，搅拌并接收在接收盘38中。接收盘38布置在干燥室37中。水通过注射器43供应至填充有钙的反应容器42 氧化物或氧化钡，从而使氧化钙或氧化钡与水反应。接收盘38被该时刻产生的反应热加热，进行后干燥，使含水率在20％以下。

33. 发明申请

US20070248736A1 Novel Alcoholic Beverage 审中-公开
标题翻译：新型酒精饮料
公开(公告)号：US20070248736A1
公开(公告)日：2007-10-25
申请号：US11579364
申请日：2005-04-11
申请人： Yutaka Masuda , Yoshihiro Yokota , Masakatsu Usui , Keiko Seki
发明人： Yutaka Masuda , Yoshihiro Yokota , Masakatsu Usui , Keiko Seki
IPC分类号： C12G3/04
CPC分类号： A23G9/46 , A23G9/045 , A23G9/32 , C12G3/04
摘要： An alcoholic beverage that as it has fluidity at −15° to −2° C., can be drunk easily and appropriately and that through coexistence of fine ice pieces and bubbles, induces novel pleasant sensation of coolness and coldness and feeling of swallow, appropriate sensation of alcohol, and excellent flavor. There is provided an alcoholic beverage characterized in that it is produced by mixing an alcoholic beverage base mix containing alcohol and at least one type of water-soluble substance with ice pieces in a proportion of 20:80 to 80:20, and conducting aeration, agitation and cooling so that the volume fraction of contained gas is in the range of 1 to 150% and that the mixture temperature is lower than −1° C., thereby obtaining a gas-containing matter having an alcohol concentration of ≧1.0 vol. % and being fluid at −15° to −2° C. wherein fine ice pieces of 0.06 to 0.8 mm major axis length are present in an amount of at least 80 wt. % based on the total weight so that remaining of at least part of the fine ice pieces is sensed.
摘要翻译：一种酒精饮料，由于其流动性在-15°至-2°C，可以容易且适当地饮用，并且通过细冰块和气泡的共存，引起新鲜舒适的凉爽感和冷感和吞咽感，适当酒精感，味道好。提供一种酒精饮料，其特征在于，其通过将含有醇和至少一种类型的水溶性物质的酒精饮料基料混合物与20:80至80:20的比例混合，并进行曝气，搅拌和冷却使得所含气体的体积分数在1至150％的范围内，并且混合物温度低于-1℃，从而获得醇浓度> 1.0体积％的含气体物质。％且在-15℃至-2℃下是流体。其中0.06至0.8mm长轴长度的细冰块以至少80重量％的量存在。基于总重量的％，以便感测至少部分细冰块的剩余量。

34. 发明申请

US20060175293A1 Semiconductor device and method for manufacturing multilayered substrate for semiconductor device 有权
标题翻译：半导体装置用多晶半导体装置及其制造方法
公开(公告)号：US20060175293A1
公开(公告)日：2006-08-10
申请号：US11328162
申请日：2006-01-10
申请人： Takeshi Tachibana , Kazushi Hayashi , Yoshihiro Yokota , Koji Kobashi , Takashi Kobori
发明人： Takeshi Tachibana , Kazushi Hayashi , Yoshihiro Yokota , Koji Kobashi , Takashi Kobori
IPC分类号： B44C1/22 , C23F1/00 , C03C15/00
CPC分类号： H01L21/022 , C23C16/01 , C23C16/274 , C23C16/278 , C23C16/56 , H01L21/02115 , H01L21/02123 , H01L21/0405 , H01L21/3146 , H01L21/76256 , H01L2221/68363
摘要： A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.
摘要翻译：提供一种半导体装置用多层基板的制造方法以及半导体装置，该多层基板具有优异的导热性和优异的散热效果，而不发生翘曲变形。通过CVD方法通过气相沉积在第一硅衬底的一个主表面上形成金刚石层。在该金刚石层上形成SiO 2层。通过热氧化法在第二硅衬底的表面上形成SiO 2层。金刚石层与设置在金刚石层和第二硅衬底之间的SiO 2层结合到第二硅衬底。通过蚀刻溶解去除第一硅衬底以暴露金刚石层的表面。通过CVD法在金刚石层上形成用作半导体层的硅层。

35. 发明授权

US07064352B2 Diamond semiconductor device and method for manufacturing the same 失效
标题翻译：金刚石半导体器件及其制造方法
公开(公告)号：US07064352B2
公开(公告)日：2006-06-20
申请号：US11003510
申请日：2004-12-06
申请人： Yoshihiro Yokota , Nobuyuki Kawakami , Takeshi Tachibana , Kazushi Hayashi
发明人： Yoshihiro Yokota , Nobuyuki Kawakami , Takeshi Tachibana , Kazushi Hayashi
IPC分类号： H01L31/312 , H01L21/00
CPC分类号： H01L29/1602 , H01L29/78
摘要： A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.
摘要翻译：金刚石半导体器件包括由单晶金刚石制成的衬底; 第一金刚石层，放置在衬底上，含有杂质; 含有所述杂质的第二金刚石层，所述第二金刚石层被放置在所述基板上并与所述第一金刚石层间隔开; 以及第三金刚石层，其杂质含量小于作为沟道区的第一和第二金刚石层的杂质含量，并且电荷从第一金刚石层转移到第二金刚石层。第一和第二金刚石层具有彼此面对的第一和第二端部，其间具有空间。第一和第二端部具有取决于衬底的取向外延形成的斜面。第三金刚石层位于斜坡上方，并且位于该空间下方的基底部分。

36. 发明申请

US20050181122A1 Ultraviolet sensor and method for manufacturing the same 失效
标题翻译：紫外线传感器及其制造方法
公开(公告)号：US20050181122A1
公开(公告)日：2005-08-18
申请号：US11057603
申请日：2005-02-15
申请人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
发明人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
IPC分类号： H01L31/08 , G01J1/02 , G01J1/42 , H01L31/101 , C23C14/00
CPC分类号： G01J1/429 , G01J2001/0276 , H01L31/028 , H01L31/09 , H01L31/1085 , H01L2224/45144 , H01L2224/48091 , H01L2924/10253 , H01L2924/12032 , Y02E10/547 , H01L2924/00014 , H01L2924/00
摘要： An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon. A method for manufacturing the ultraviolet sensor includes a step of forming a diamond layer, functioning as a detector, on a substrate; a step of forming at least one pair of surface electrodes on the diamond layer; and a step of forming a covering layer, made of oxide or fluoride, on at least one sub-region of a detecting region present at the surface of the diamond layer, the sub-region being exposed from the surface electrodes.
摘要翻译：紫外线传感器包括基板; 金刚石层，放置在基板上，用作检测器; 以及布置在金刚石层上的至少一对表面电极。金刚石层的表面存在检测区域，检测区域具有从表面电极露出的至少一个子区域，并且子区域具有由氧化物或氟化物构成的覆盖层。紫外线传感器的制造方法包括在基板上形成用作检测器的金刚石层的工序; 在金刚石层上形成至少一对表面电极的步骤; 以及在存在于金刚石层的表面的检测区域的至少一个子区域上形成由氧化物或氟化物构成的覆盖层的步骤，该子区域从表面电极露出。

37. 发明授权

US06383288B1 Method of forming diamond film 失效
标题翻译：形成金刚石薄膜的方法
公开(公告)号：US06383288B1
公开(公告)日：2002-05-07
申请号：US09232903
申请日：1999-01-19
申请人： Kazushi Hayashi , Yoshihiro Yokota , Koji Kobashi
发明人： Kazushi Hayashi , Yoshihiro Yokota , Koji Kobashi
IPC分类号： C30B2904
CPC分类号： C23C16/274 , C23C16/0254 , C30B25/105 , C30B25/18 , C30B29/04
摘要： A method of forming a diamond film includes synthesizing a diamond film on a surface of a substrate, where the surface of the substrate has trenches. The trenches inhibit delamination of the diamond film.
摘要翻译：形成金刚石膜的方法包括在衬底的表面上合成金刚石膜，其中衬底的表面具有沟槽。沟槽抑制金刚石膜的分层。

38. 发明授权

US06328898B1 Method of and apparatus for forming highly oxidative water 失效
标题翻译：用于形成高度氧化水的方法和设备
公开(公告)号：US06328898B1
公开(公告)日：2001-12-11
申请号：US09599885
申请日：2000-06-23
申请人： Hidenori Akiyama , Kenichi Inoue , Akira Kobayashi , Yoshihiro Yokota , Shigeto Adachi , Kazuhiko Asahara
发明人： Hidenori Akiyama , Kenichi Inoue , Akira Kobayashi , Yoshihiro Yokota , Shigeto Adachi , Kazuhiko Asahara
IPC分类号： C02F172
CPC分类号： C02F1/78 , B01J3/04 , B01J2219/00162 , C01B13/00 , C02F1/4608 , C02F1/4672 , C02F2201/46175 , C02F2201/78
摘要： Highly oxidative water containing ozone and/or OH radicals dissolved in a large amount is prepared by dissolving an oxygen rich gas at high pressure in water and then the pressure is lowered to form fine bubbles in water from the dissolved oxygen rich gas and the fine bubbles are exposed to pulse discharge. Method of and apparatus capable of forming highly oxidative water containing ozone or OH radicals at high concentration exhibiting an oxidizing performance at a level sufficient to practical use with excellent power efficiency and productivity by discharge in water.
摘要翻译：通过将富氧气体在高压下溶解在水中而制备含有大量溶解臭氧和/或OH自由基的高度氧化水，然后压力降低，从溶解的富氧气体和细小气泡中形成细小的气泡暴露于脉冲放电。能够以高浓度形成含有臭氧或OH自由基的高度氧化水的方法和装置，其具有足够实用的水平的氧化性能，具有优异的功率效率和通过在水中排放的生产率。

39. 发明授权

US06198218B1 Organic light emitting device using diamond film 失效
标题翻译：有机发光装置使用金刚石膜
公开(公告)号：US06198218B1
公开(公告)日：2001-03-06
申请号：US09215297
申请日：1998-12-18
申请人： Koji Kobashi , Yoshihiro Yokota , Takeshi Tachibana , Kazushi Hayashi , Maki Hamaguchi , Katsumi Yoshino
发明人： Koji Kobashi , Yoshihiro Yokota , Takeshi Tachibana , Kazushi Hayashi , Maki Hamaguchi , Katsumi Yoshino
IPC分类号： H01J162
CPC分类号： H01L51/5012
摘要： An organic LED is provided that can stably and efficiently emit light as a result of a heat resistant hole drift layer. The organic LED can include, in order, a substrate, a hole injection electrode layer, a hole drift layer, an organic light emitting layer, an electron drift layer and an electron injection electrode layer. The hole drift layer comprises a diamond film with a boron concentration of between about 1.0×1019 and about 1.0×1021/cm3. An optically transparent layer can be formed on the electron injection electrode layer.
摘要翻译：提供能够由于耐热孔漂移层而稳定且有效地发光的有机LED。有机LED可以依次包括基板，空穴注入电极层，空穴漂移层，有机发光层，电子漂移层和电子注入电极层。孔漂移层包括硼浓度在约1.0×1019至约1.0×10 21 / cm 3之间的金刚石膜。可以在电子注入电极层上形成光透明层。

40. 发明授权

US5814149A Methods for manufacturing monocrystalline diamond films 失效
标题翻译：制造单晶金刚石薄膜的方法
公开(公告)号：US5814149A
公开(公告)日：1998-09-29
申请号：US560077
申请日：1995-11-17
申请人： Yoshihiro Shintani , Takeshi Tachibana , Kozo Nishimura , Koichi Miyata , Yoshihiro Yokota , Koji Kobashi
发明人： Yoshihiro Shintani , Takeshi Tachibana , Kozo Nishimura , Koichi Miyata , Yoshihiro Yokota , Koji Kobashi
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C30B25/02
CPC分类号： C23C16/271 , C23C16/0263 , C23C16/0281 , C23C16/272 , C23C16/274 , C23C16/275 , C30B25/02 , C30B29/04
摘要： A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within .+-.10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.
摘要翻译：一种方法涉及通过化学气相沉积在大面积上以低成本生长单晶金刚石膜。衬底材料是Pt或其合金的块状单晶，或者是沉积在合适的支撑材料上的那些材料的薄膜。这些基材的表面必须是（111）或（001），或者必须具有由（111）或（001）晶体表面组成的畴结构。那些表面可以从（111）或（001）的+/- 10度角倾斜。为了增加金刚石的成核密度，可以通过抛光和/或超声波抛光或植入碳来划伤基底表面。即使衬底表面被粗糙化，也可以生长单晶金刚石膜。衬底表面的等离子体清洗和Pt或其合金膜的退火在生长高品质单晶金刚石膜方面是有效的。

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