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31. 发明授权

US07572718B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07572718B2
公开(公告)日：2009-08-11
申请号：US11092773
申请日：2005-03-30
申请人： Yohei Kanno , Yasuko Watanabe
发明人： Yohei Kanno , Yasuko Watanabe
IPC分类号： H01L21/3205
CPC分类号： H01L29/42384 , H01L21/268 , H01L27/1292 , H01L29/4908 , H01L29/66757 , H01L29/78621
摘要： In the case of providing an LDD region for a TFT, it is necessary to form separately an insulating film to be a mask or to contrive the shape of a gate electrode layer in order to have the concentration difference in impurities injected in a semiconductor film; therefore, the number of patterning steps has increased as a matter of course and the step has become complicated. A semiconductor device according to one feature of the invention comprises a semiconductor layer including a channel region, a pair of impurity regions, and a pair of low-concentration impurity regions; and a gate electrode layer having a single layer structure or a laminated structure, of which film thickness is not even, which is formed to be in contact with the semiconductor layer by sandwiching a gate insulating film therebetween. Particularly, the gate electrode layer, of which film thickness is not even, can be formed easily by employing a droplet discharging method; thus, the convenience of the droplet discharging method can be taken with full advantage.
摘要翻译：在为TFT提供LDD区域的情况下，需要分别形成作为掩模的绝缘膜或者为了使注入半导体膜中的杂质的浓度差成为栅极电极层的形状; 因此，图案化步骤的数量当然增加，并且步骤变得复杂。根据本发明的一个特征的半导体器件包括：半导体层，包括沟道区，一对杂质区和一对低浓度杂质区; 以及通过在其间夹有栅极绝缘膜而形成为与半导体层接触的膜厚不均匀的单层结构或层叠结构的栅极电极层。特别地，通过采用液滴喷射法可以容易地形成膜厚不均匀的栅电极层; 因此，可以充分利用液滴喷射方法的方便性。

32. 发明申请

US20080009125A1 Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device 有权
标题翻译：薄膜集成电路器件的制造方法和非接触式薄膜集成电路器件的制造方法
公开(公告)号：US20080009125A1
公开(公告)日：2008-01-10
申请号：US11896509
申请日：2007-09-04
申请人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
发明人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
IPC分类号： H01L21/30 , H01L21/84
CPC分类号： H01L21/6835 , G06K19/0704 , G06K19/0723 , G06K19/07703 , G06K19/07718 , G06K19/07745 , G06K19/07749 , G06K19/0775 , G06K19/07758 , G06K19/07779 , G06K19/07781 , G06K19/07783 , H01L23/49855 , H01L2221/68318 , H01L2221/68359 , H01L2221/68368 , H01L2224/45147 , H01L2224/49171 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/12044 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/00 , H01L2224/48 , H01L2924/00011
摘要： With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip. A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.
摘要翻译：随着非接触式和接触式IC芯片的普及，需要大量生产大量可用于人类，动植物，商业产品，纸币等的IC芯片，成本低廉。例如，以IC成本为1〜数日元的成本，优选以不到1日元的成本为代价，制造适用于商品，纸币等的IC芯片是有必要的。可以低成本大量生产的IC芯片的结构和IC芯片的制造工艺。根据本发明的制造薄膜集成电路器件的方法包括以下步骤：在热氧化硅衬底上形成剥离层，在剥离层上形成多个薄膜集成电路器件，底片在所述多个薄膜集成电路器件之间形成沟槽，并且通过将包含卤素氟化物的气体和液体中的一种引入到所述沟槽中以去除所述剥离层来分离所述多个薄膜集成电路器件。

33. 发明申请

US20050148121A1 Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device 有权
标题翻译：薄膜集成电路器件的制造方法和非接触式薄膜集成电路器件的制造方法
公开(公告)号：US20050148121A1
公开(公告)日：2005-07-07
申请号：US11007645
申请日：2004-12-09
申请人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
发明人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
IPC分类号： G06K19/07 , G06K19/077 , H01L21/00 , H01L21/68 , H01L21/82 , H01L23/02 , H01L23/498 , H01L27/00
CPC分类号： H01L21/6835 , G06K19/0704 , G06K19/0723 , G06K19/07703 , G06K19/07718 , G06K19/07745 , G06K19/07749 , G06K19/0775 , G06K19/07758 , G06K19/07779 , G06K19/07781 , G06K19/07783 , H01L23/49855 , H01L2221/68318 , H01L2221/68359 , H01L2221/68368 , H01L2224/45147 , H01L2224/49171 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/12044 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/00 , H01L2224/48 , H01L2924/00011
摘要： With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip. A method of-manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.
摘要翻译：随着非接触式和接触式IC芯片的普及，需要大量生产大量可用于人类，动植物，商业产品，纸币等的IC芯片，成本低廉。例如，以IC成本为1〜数日元的成本，优选以不到1日元的成本为代价，制造适用于商品，纸币等的IC芯片是有必要的。可以低成本大量生产的IC芯片的结构和IC芯片的制造工艺。根据本发明的制造薄膜集成电路器件的方法包括以下步骤：在热氧化硅衬底上形成剥离层，在剥离层上形成多个薄膜集成电路器件，基底在所述多个薄膜集成电路器件之间形成沟槽，并且通过将含有卤素氟化物的气体和液体中的一种引入到所述沟槽中以除去所述剥离层来分离所述多个薄膜集成电路器件。

34. 发明授权

US06568385B2 Cutting machine 有权
公开(公告)号：US06568385B2
公开(公告)日：2003-05-27
申请号：US09933945
申请日：2001-08-22
申请人： Kazuma Sekiya , Naoki Omiya , Yohei Kanno
发明人： Kazuma Sekiya , Naoki Omiya , Yohei Kanno
IPC分类号： B28D102
CPC分类号： B23Q11/0841 , B23Q11/0816 , B28D5/0076 , B28D5/024
摘要： A cutting machine of a type having bellows means disposed at least on one side of a chuck table to be reciprocated. A protective sheet covering the upper surface of the bellows means is disposed. One end of the protective sheet is reciprocated in accordance with the reciprocation of the chuck table, while the other end of the protective sheet is connected to winding means. When the chuck table is moved forward or backward, the protective sheet is gradually wound up by the winding means. When the chuck table is moved backward or forward, the protective sheet is gradually wound off from the winding means.

35. 发明授权

US08619219B2 Thin film transistor, display device and liquid crystal display device and method for manufacturing the same 有权
标题翻译：薄膜晶体管，显示装置和液晶显示装置及其制造方法
公开(公告)号：US08619219B2
公开(公告)日：2013-12-31
申请号：US13552845
申请日：2012-07-19
申请人： Shunpei Yamazaki , Shinji Maekawa , Yohei Kanno
发明人： Shunpei Yamazaki , Shinji Maekawa , Yohei Kanno
IPC分类号： G02F1/1333
CPC分类号： H01L21/288 , H01L21/28008 , H01L21/76838 , H01L27/1292 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L2224/73265
摘要： As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.
摘要翻译：随着布线变厚，覆盖布线的绝缘膜的不连续性成为问题。对于用于当前的高分辨率显示装置的薄膜晶体管，难以形成宽度足够薄的布线。由于布线变薄，由于布线电阻引起的信号延迟已经成为问题。鉴于上述问题，本发明提供一种在绝缘膜的孔中形成导电膜，并且导电膜和绝缘膜的表面平坦的结构。结果，可以防止覆盖导电膜和绝缘膜的薄膜的不连续性。通过控制孔的宽度可以使布线更薄。此外，通过控制孔的深度，可以使布线变厚。

36. 发明申请

US20120282717A1 THIN FILM TRANSISTOR, DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，显示装置和液晶显示装置及其制造方法
公开(公告)号：US20120282717A1
公开(公告)日：2012-11-08
申请号：US13552845
申请日：2012-07-19
申请人： Shunpei YAMAZAKI , Shinji Maekawa , Yohei Kanno
发明人： Shunpei YAMAZAKI , Shinji Maekawa , Yohei Kanno
IPC分类号： H01L33/44
CPC分类号： H01L21/288 , H01L21/28008 , H01L21/76838 , H01L27/1292 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L2224/73265
摘要： As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.
摘要翻译：随着布线变厚，覆盖布线的绝缘膜的不连续性成为问题。对于用于当前的高分辨率显示装置的薄膜晶体管，难以形成宽度足够薄的布线。由于布线变薄，由于布线电阻引起的信号延迟已经成为问题。鉴于上述问题，本发明提供一种在绝缘膜的孔中形成导电膜，并且导电膜和绝缘膜的表面平坦的结构。结果，可以防止覆盖导电膜和绝缘膜的薄膜的不连续性。通过控制孔的宽度可以使布线更薄。此外，通过控制孔的深度，可以使布线变厚。

37. 发明授权

US08053780B2 Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same 有权
标题翻译：半导体元件及其制造方法，液晶显示装置及其制造方法
公开(公告)号：US08053780B2
公开(公告)日：2011-11-08
申请号：US10577057
申请日：2004-11-05
申请人： Yohei Kanno , Gen Fujii
发明人： Yohei Kanno , Gen Fujii
IPC分类号： H01L31/036 , G02F1/1333
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/42384 , H01L29/78603 , H01L29/78696
摘要： In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.
摘要翻译：在常规TFT形成为具有反交错型的情况下，需要通过在形成岛状半导体区域中的曝光，显影和液滴放电来形成抗蚀剂掩模。这导致过程数量和材料数量的增加。根据本发明，由于在形成源极区域和漏极区域之后，由于作为沟道区域的部分被用作沟道保护膜的绝缘膜覆盖以形成岛状半导体膜，因此可以简化工艺，因此可以仅使用金属掩模而不使用抗蚀剂掩模来制造半导体元件。

38. 发明申请

US20110026240A1 OPTICAL ELEMENT LAMINATE AND MANUFACTURING METHOD THEREOF, BACKLIGHT, AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：光学元件层压板及其制造方法，背光和液晶显示装置
公开(公告)号：US20110026240A1
公开(公告)日：2011-02-03
申请号：US12743466
申请日：2009-09-18
申请人： Hiroshi Hayashi , Eiji Ohta , Ken Hosoya , Yasuyuki Kudo , Shigehiro Yamakita , Masayasu Kakinuma , Taku Ishimori , Shogo Shinkai , Yoshiyuki Maekawa , Masami Miyake , Yohei Kanno , Fumiko Sasaki , Akihiro Horii
发明人： Hiroshi Hayashi , Eiji Ohta , Ken Hosoya , Yasuyuki Kudo , Shigehiro Yamakita , Masayasu Kakinuma , Taku Ishimori , Shogo Shinkai , Yoshiyuki Maekawa , Masami Miyake , Yohei Kanno , Fumiko Sasaki , Akihiro Horii
IPC分类号： G09F13/04 , B32B3/02 , B32B7/04 , G02B1/04 , B32B37/00
CPC分类号： G02B6/0065 , B29D11/0073 , G02B6/0081 , G02B6/0088 , G02B6/0093 , G02F1/133606 , G02F1/133615 , G02F1/13362 , G02F2001/133317 , G02F2001/133322 , G02F2001/133607 , G02F2201/083 , G02F2201/086 , G02F2201/54 , G02F2202/023 , G02F2202/025 , G02F2202/28 , G02F2203/68 , Y10T428/1036 , Y10T428/23 , Y10T428/24777
摘要： An optical element laminate is provided which, while an increase in thickness of a liquid crystal display device is suppressed, improves insufficient rigidity of an optical element and, in addition, which does not degrade display characteristics of the liquid crystal display device. The optical element laminate includes a plate-shaped support member having a first primary surface and a second primary surface and an optical element which is laminated on at least one of the first primary surface and the second primary surface of the support member and, in addition, which has a film shape or a sheet shape. The periphery of the laminated optical element is at least bonded to facing two sides of the support member, the optical element and the support member are placed in close contact with each other, and a thickness t of the support member, a length L of the support member, and a tensile force F of the optical element satisfy the relational expression of 0≦F≦1.65×104×t/L in an environment at a temperature of 70° C.
摘要翻译：提供一种光学元件层叠体，其在抑制液晶显示装置的厚度增加的同时，提高光学元件的刚性不足，并且不会降低液晶显示装置的显示特性。光学元件层叠体包括具有第一主表面和第二主表面的板状支撑构件和层叠在支撑构件的第一主表面和第二主表面中的至少一个上的光学元件，另外，其具有膜形状或片状。层叠光学元件的周边至少与支撑构件的两侧面接合，光学元件和支撑构件彼此紧密接触，并且支撑构件的厚度t为支撑构件和光学元件的拉伸力F在温度为70℃的环境中满足关系式0＆lt; nlE; F＆nlE; 1.65×104×t / L。

39. 发明授权

US07271076B2 Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device 有权
标题翻译：薄膜集成电路器件的制造方法和非接触式薄膜集成电路器件的制造方法
公开(公告)号：US07271076B2
公开(公告)日：2007-09-18
申请号：US11007645
申请日：2004-12-09
申请人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
发明人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L21/6835 , G06K19/0704 , G06K19/0723 , G06K19/07703 , G06K19/07718 , G06K19/07745 , G06K19/07749 , G06K19/0775 , G06K19/07758 , G06K19/07779 , G06K19/07781 , G06K19/07783 , H01L23/49855 , H01L2221/68318 , H01L2221/68359 , H01L2221/68368 , H01L2224/45147 , H01L2224/49171 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/12044 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/00 , H01L2224/48 , H01L2924/00011
摘要： A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.
摘要翻译：根据本发明的制造薄膜集成电路器件的方法包括以下步骤：在热氧化硅衬底上形成剥离层，在剥离层上形成多个薄膜集成电路器件，底片在所述多个薄膜集成电路器件之间形成沟槽，并且通过将包含卤素氟化物的气体和液体中的一种引入到所述沟槽中以去除所述剥离层来分离所述多个薄膜集成电路器件。

40. 发明申请

US20070131976A1 Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same 有权
标题翻译：半导体元件及其制造方法，液晶显示装置及其制造方法
公开(公告)号：US20070131976A1
公开(公告)日：2007-06-14
申请号：US10577057
申请日：2004-11-05
申请人： Yohei Kanno , Gen Fujii
发明人： Yohei Kanno , Gen Fujii
IPC分类号： H01L27/148 , H01L29/768 , H01L29/74
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/42384 , H01L29/78603 , H01L29/78696
摘要： In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.
摘要翻译：在常规TFT形成为具有反交错型的情况下，需要通过在形成岛状半导体区域中的曝光，显影和液滴放电来形成抗蚀剂掩模。这导致过程数量和材料数量的增加。根据本发明，由于在形成源极区域和漏极区域之后，由于作为沟道区域的部分被用作沟道保护膜的绝缘膜覆盖以形成岛状半导体膜，因此可以简化工艺，因此可以仅使用金属掩模而不使用抗蚀剂掩模来制造半导体元件。

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