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31. 发明申请

US20060252165A1 Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same 审中-公开
标题翻译：电极结构，半导体发光装置及其制造方法
公开(公告)号：US20060252165A1
公开(公告)日：2006-11-09
申请号：US11476680
申请日：2006-06-29
申请人： Mi-yang Kim , Joon-seop Kwak
发明人： Mi-yang Kim , Joon-seop Kwak
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , B82Y20/00 , H01L33/32 , H01S5/021 , H01S5/0421 , H01S5/0425 , H01S5/2231 , H01S5/34333 , H01S2304/00 , Y10S257/918 , Y10S257/93
摘要： A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device comprises a transparent substrate, an electron injection layer having first and second regions on the transparent substrate, an active region formed on the first region, a hole injection layer on the active layer, a first electrode structure on the second region, and a second electrode structure on the hole injection layer, and comprises a first layer including nitrogen and a second layer including Pd. The low contact resistance and high reflectance can be obtained by forming a trivalent compound layer composed of Pa—Ga—N at an interface between the hole injection layer, which is composed of p-GaN, and the metal layer of the p-type electrode.
摘要翻译：提供了包括p型电极结构并具有低接触电阻和高反射率的半导体发光器件。半导体发光器件包括透明衬底，在透明衬底上具有第一和第二区域的电子注入层，形成在第一区域上的有源区，有源层上的空穴注入层，第二区域上的第一电极结构以及空穴注入层上的第二电极结构，并且包括包含氮的第一层和包含Pd的第二层。低接触电阻和高反射率可以通过在由p-GaN组成的空穴注入层与p型电极的金属层之间的界面处形成由Pa-Ga-N组成的三价化合物层来获得。

32. 发明申请

US20060157719A1 Semiconductor light emitting diode having textured structure and method of manufacturing the same 失效
公开(公告)号：US20060157719A1
公开(公告)日：2006-07-20
申请号：US11320811
申请日：2005-12-30
申请人： Joon-seop Kwak , Jeong-wook Lee
发明人： Joon-seop Kwak , Jeong-wook Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L33/007 , H01L33/12
摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer.

33. 发明申请

US20060081867A1 Reflective electrode and compound semiconductor light emitting device including the same 有权
标题翻译：反射电极和包含该反射电极的化合物半导体发光器件
公开(公告)号：US20060081867A1
公开(公告)日：2006-04-20
申请号：US11157971
申请日：2005-06-22
申请人： Mi-yang Kim , Joon-seop Kwak
发明人： Mi-yang Kim , Joon-seop Kwak
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , B82Y20/00 , H01L21/28575 , H01L33/32 , H01S5/0425 , H01S5/1078 , H01S5/18 , H01S5/2027 , H01S5/34333
摘要： Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising a first electrode layer formed one of a Ag and Ag-alloy and forms an ohmic contact with the p-type compound semiconductor layer, a third electrode layer formed of a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer, and a fourth electrode layer formed of a light reflective material on the third electrode layer.
摘要翻译：提供反射电极和具有诸如LED或LD的反射电极的化合物半导体发光器件。形成在化合物半导体发光器件的p型化合物半导体层上的反射电极，包括形成Ag和Ag合金之一并与p型化合物半导体层形成欧姆接触的第一电极层，第三电极层在第一电极层上由选自Ni，Ni合金，Zn，Zn合金，Cu，Cu合金，Ru，Ir和Rh的材料形成的电极层，以及由第一电极层光反射材料在第三电极层上。

34. 发明申请

US20050062051A1 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20050062051A1
公开(公告)日：2005-03-24
申请号：US10940748
申请日：2004-09-15
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L33/32 , H01L33/40 , H01L29/06
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极，和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

35. 发明申请

US20050002428A1 Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount 有权
标题翻译：半导体激光二极管的基座，其制造方法以及使用该基座的半导体激光二极管组件
公开(公告)号：US20050002428A1
公开(公告)日：2005-01-06
申请号：US10732241
申请日：2003-12-11
申请人： Joon-seop Kwak , Su-hee Chae , Youn-joon Sung
发明人： Joon-seop Kwak , Su-hee Chae , Youn-joon Sung
IPC分类号： H01S5/022 , H01S5/02 , H01S5/024 , H01S5/20 , H01S5/22 , H01S5/323 , H01S3/04 , H01S5/00
CPC分类号： H01S5/0206 , H01L33/62 , H01L2924/0002 , H01S5/0207 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/2205 , H01L2924/00
摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.
摘要翻译：提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。所述基座包括具有第一和第二表面的基板，所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度，并分别结合到第一和第二电极。

36. 发明授权

US08324004B2 Method for manufacturing of light emitting device using GaN series III-V group nitride semiconductor material 失效
标题翻译：使用GaN系III-V族氮化物半导体材料制造发光器件的方法
公开(公告)号：US08324004B2
公开(公告)日：2012-12-04
申请号：US12495000
申请日：2009-06-30
申请人： Joon-seop Kwak , Kyo-yeol Lee , Jae-hee Cho , Su-hee Chae
发明人： Joon-seop Kwak , Kyo-yeol Lee , Jae-hee Cho , Su-hee Chae
IPC分类号： H01L21/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/0079 , H01L33/38 , H01L33/382 , H01L33/46 , H01L33/641 , H01L2933/0016 , H01S5/0207 , H01S5/021 , H01S5/0217 , H01S5/024 , H01S5/02461 , H01S5/02476 , H01S5/0424 , H01S5/0425 , H01S5/34333 , Y10S438/928
摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.
摘要翻译：提供一种GaN基III-V族氮化物半导体发光器件及其制造方法。在GaN基III-V族氮化物半导体发光器件中，包括面向相反方向或相同方向的第一和第二电极，其间具有耐高压衬底和用于发光或发光的材料层，第二电极直接接触最外层的材料层通过高阻基板的蚀刻区域露出。可以在高阻基板的底部上形成导热层以覆盖最外层材料层的暴露区域。

37. 发明申请

US20110198652A1 LOW RESISTANCE ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME 失效
标题翻译：低电阻电极和化合物半导体发光器件，包括它们
公开(公告)号：US20110198652A1
公开(公告)日：2011-08-18
申请号：US13095487
申请日：2011-04-27
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L33/60 , B82Y99/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

38. 发明授权

US07894499B2 Semiconductor laser device with a rounded base mesa structure 失效
标题翻译：具有圆形底座台面结构的半导体激光器件
公开(公告)号：US07894499B2
公开(公告)日：2011-02-22
申请号：US10823653
申请日：2004-04-14
申请人： Kwang-ki Choi , Joon-seop Kwak
发明人： Kwang-ki Choi , Joon-seop Kwak
IPC分类号： H01S3/16 , H01S5/00
CPC分类号： H01S5/227 , H01S5/32341
摘要： A semiconductor laser device having a smooth cleavage plane is provided. The provided laser device includes a current injection ridge and force distribution ridges formed adjacent to the current injection ridge, which protrudes from an upper surface of a mesa structure. The mesa structure is formed of multi-semiconductor material layers including a laser resonance layer and cladding layers disposed above and below the resonance layer. The current injection ridge and the force distribution ridges distribute a scribing force when cleaving the laser device so that the smooth cleavage planes are obtained. Defects are prevented in the current injection ridge due to the distribution of force when bonding flip chips.
摘要翻译：提供具有平滑解理面的半导体激光器件。提供的激光装置包括从台面结构的上表面突出的电流注入脊和与当前注入脊相邻形成的力分布脊。台面结构由包括激光共振层和设置在共振层上方和下方的包覆层的多半导体材料层形成。当切割激光器件时，当前的注入脊和力分布脊分布划线力，从而获得平滑的解理面。由于在接合倒装芯片时的力分布，在当前的注入脊中防止了缺陷。

39. 发明授权

US07790486B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07790486B2
公开(公告)日：2010-09-07
申请号：US11506837
申请日：2006-08-21
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极，和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

40. 发明授权

US07666693B2 Top-emitting nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：顶部发射氮化物基发光器件及其制造方法
公开(公告)号：US07666693B2
公开(公告)日：2010-02-23
申请号：US12180312
申请日：2008-07-25
申请人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
发明人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
摘要翻译：提供了一种顶发射N型发光器件及其制造方法。该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。改性金属层由Ag基材料形成。

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