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31. 发明授权

US06976022B2 Method and mechanism for batch processing transaction logging records 有权
标题翻译：批处理事务日志记录的方法和机制
公开(公告)号：US06976022B2
公开(公告)日：2005-12-13
申请号：US10245118
申请日：2002-09-16
申请人： Srinivas Vemuri , Amit Ganesh , Arvind Nithrakashyap , Roger Bamford , Jonathan Klein , Vikram Joshi
发明人： Srinivas Vemuri , Amit Ganesh , Arvind Nithrakashyap , Roger Bamford , Jonathan Klein , Vikram Joshi
IPC分类号： G06F17/30
CPC分类号： G06F17/30368 , G06F17/30371 , Y10S707/99938
摘要： A method and mechanism is disclosed for implementing transaction logging in a database system. In-memory undo records are maintained to log undo information for the database system. Redo records are batch processed, with multiple redo records for a transaction stored on disk at commit time.
摘要翻译：公开了一种在数据库系统中实现事务日志记录的方法和机制。维护内存中的撤销记录以记录数据库系统的撤消信息。重做记录是批量处理的，在提交时存储在磁盘上的事务具有多个重做记录。

32. 发明授权

US06924997B2 Ferroelectric memory and method of operating same 有权
标题翻译：铁电存储器和操作方法相同
公开(公告)号：US06924997B2
公开(公告)日：2005-08-02
申请号：US10381235
申请日：2001-09-25
申请人： Zheng Chen , Vikram Joshi , Myoungho Lim , Carlos A. Paz de Araujo , Larry D. McMillan , Yoshihisa Kato , Tatsuo Otsuki , Yasuhiro Shimada
发明人： Zheng Chen , Vikram Joshi , Myoungho Lim , Carlos A. Paz de Araujo , Larry D. McMillan , Yoshihisa Kato , Tatsuo Otsuki , Yasuhiro Shimada
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric memory 636 includes a group of memory cells (645, 12, 201, 301, 401, 501), each cell having a ferroelectric memory element (44, 218, etc.), a drive line (122, 322, 422, 522 etc.) on which a voltage for writing information to the group of memory cells is placed, a bit line (25, 49, 125, 325, 425, 525, etc.) on which information to be read out of the group of memory cells is placed, a preamplifier (20, 42, 120, 320, 420, etc.) between the memory cells and the bit line, a set switch (14, 114, 314, 414, 514, etc.) connected between the drive line and the memory cells, and a reset switch (16, 116, 316, 416, 516, etc.) connected to the memory cells in parallel with the preamplifier. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.
摘要翻译：铁电存储器636包括一组存储单元（645,12,21,301,401,501），每个单元具有铁电存储元件（44,218等），驱动线（122,322,422， 522等），在其上放置用于将信息写入到存储器单元组的电压，位线（25,49,125,325,425,525等），其中要从该组存储器单元读出的信息放置存储器单元，在存储器单元和位线之间的前置放大器（20,42,120,320,420等），连接在存储器单元之间的设定开关（14,114,314,414,514等）驱动线和存储器单元，以及与前置放大器并联连接到存储器单元的复位开关（16,116,316,416,516等）。通过将小于铁电存储元件的矫顽电压的电压放置在存储元件上来读取存储器。在读取之前，通过使铁电存储元件的两个电极接地来放电来自该组电池的噪声。

33. 发明授权

US06890768B2 Method of making layered superlattice material with ultra-thin top layer 有权
标题翻译：制作超薄顶层分层超晶格材料的方法
公开(公告)号：US06890768B2
公开(公告)日：2005-05-10
申请号：US10471133
申请日：2002-03-07
申请人： Junichi Karaswaw , Vikram Joshi
发明人： Junichi Karaswaw , Vikram Joshi
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L21/00
CPC分类号： H01L21/02197 , H01L21/022 , H01L21/02337 , H01L21/02348 , H01L21/31691 , H01L28/56
摘要： In the manufacture of an integrated circuit memory cell, a strontium bismuth tantalate or strontium bismuth tantalum niobate thin film layer (50) is deposited on a substrate (28, 49) and a carefully controlled UV baking process is performed on the strontium bismuth tantalate layer (50) prior to the deposition of an ultra-thin bismuth tantalate layer (51). A second electrode (52) is formed on top of the ultra-thin bismuth tantalate layer (51).
摘要翻译：在集成电路存储单元的制造中，将钽酸铋铋或铌酸铋钽酸铋薄膜层（50）沉积在基板（28,49）上，并且对铋铋钽酸盐层进行仔细控制的UV烘烤工艺（50）在沉积超薄铋钽酸盐层（51）之前。第二电极（52）形成在超薄钽酸铋层（51）的顶部。

34. 发明授权

US06867452B2 Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7 失效
标题翻译：含有氧化物的薄膜用于高介电常数应用的AB2O6或AB2O7
公开(公告)号：US06867452B2
公开(公告)日：2005-03-15
申请号：US10278581
申请日：2002-10-23
申请人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L21/314 , H01L21/316 , H01L27/06 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/02197 , H01L21/02205 , H01L21/02282 , H01L21/02348 , H01L21/31691 , H01L27/0629
摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦y≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译：一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜。一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= y <= 1.0且0 <= Y＆LE; 1.0; （BAxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; AND（BAxSr1-x）2Bi2（TayNb1-y）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。根据本发明的薄膜的相对介电常数> 40，优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

35. 发明授权

US06781184B2 Barrier layers for protecting metal oxides from hydrogen degradation 有权
标题翻译：用于保护金属氧化物免受氢降解的阻挡层
公开(公告)号：US06781184B2
公开(公告)日：2004-08-24
申请号：US09998469
申请日：2001-11-29
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.
摘要翻译：集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到诸如铁电层状超晶格材料的金属氧化物的薄膜。氢扩散阻挡层包括以下化合物中的至少一种：钽酸锶，钽酸铋，氧化钽，氧化钛，氧化锆和氧化铝。氢阻挡层是无定形的，并且在450℃或更低的温度下通过MOCVD工艺制成。在与所述氢扩散阻挡层相邻的地方形成包括选自氮化硅和所述氢阻挡层材料之一的结晶形式的材料的补充氢阻挡层。

36. 发明授权

US06541279B2 Method for forming an integrated circuit 有权
标题翻译：集成电路形成方法
公开(公告)号：US06541279B2
公开(公告)日：2003-04-01
申请号：US09798310
申请日：2001-03-02
申请人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L21/02197 , H01L21/02205 , H01L21/02282 , H01L21/02348 , H01L21/31691 , H01L27/0629
摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNby−1)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译：一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜。一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= x <= 1.0且0 <= y <= 1.0; （BaxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; 和（BaxSr1-x）2Bi2（TayNby-1）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。根据本发明的薄膜的相对介电常数> 40，优选约100.本发明金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

37. 发明授权

US06370056B1 Ferroelectric memory and method of operating same 失效
标题翻译：铁电存储器和操作方法相同
公开(公告)号：US06370056B1
公开(公告)日：2002-04-09
申请号：US09523492
申请日：2000-03-10
申请人： Zheng Chen , Vikram Joshi , Myoungho Lim , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Zheng Chen , Vikram Joshi , Myoungho Lim , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： A ferroelectric non-volatile memory comprising: a plurality of memory cells, each containing an FeFET and a MOSFET, each of said FeFETs having a source, a drain, a substrate, and a gate, and each MOSFET having a pair of source/drains and a gate. The cells are arranged in an array comprising a plurality of rows and a plurality of columns. A gate line and a bit line are associated with each column, and a word line, a drain line, and a substrate line are associated with each row. One source/drain of each MOSFET is connected to its corresponding gate line; the other source/drain is connected to the gate of the FeFET in the cell. The gate of the MOSFET is connected to its corresponding word line which provides a write and erase enable signal. The drain of the FeFET is connected to its corresponding drain line, and the source of the FeFET is connected to its corresponding bit line. The substrate of each FeFET is connected to its corresponding substrate line. A read MOSFET is connected between a drain input and the drain line associated with each row. The gate of the read MOSFET is connected to an input for the read enable signal.
摘要翻译：一种铁电非易失性存储器，包括：多个存储单元，每个存储单元包含FeFET和MOSFET，每个所述FeFET具有源极，漏极，衬底和栅极，并且每个MOSFET具有一对源极/漏极和一个门。单元被布置成包括多行和多列的阵列。栅极线和位线与每列相关联，并且字线，漏极线和衬底线与每一行相关联。每个MOSFET的一个源极/漏极连接到其对应的栅极线; 另一个源极/漏极连接到电池中的FeFET的栅极。 MOSFET的栅极连接到提供写和擦除使能信号的相应字线。 FeFET的漏极连接到其对应的漏极线，并且FeFET的源极连接到其对应的位线。每个FeFET的衬底连接到其相应的衬底线。读取MOSFET连接在与每行相关联的漏极输入和漏极线之间。读取MOSFET的栅极连接到读使能信号的输入端。

38. 发明申请

US20140242262A1 CARBON-BASED ELECTRODES WITH GRAPHENE MODIFICATION 有权
标题翻译：具有石墨改性的碳基电极
公开(公告)号：US20140242262A1
公开(公告)日：2014-08-28
申请号：US14267914
申请日：2014-05-02
申请人： Mikhail Briman , Vikram Joshi
发明人： Mikhail Briman , Vikram Joshi
IPC分类号： G01N27/30
CPC分类号： G01N27/308 , G01N27/3275 , H01B1/04
摘要： Certain embodiments of the present application describe a carbon-based electrode with graphene platelets. The addition of graphene platelets is intended to improve properties of the electrode. These properties include, but are not limited to, physical, electrical, and biochemical properties of the electrode. Enhanced reproducibility of these properties can also result from the addition of the graphene platelets.
摘要翻译：本申请的某些实施方案描述了具有石墨烯片晶的碳基电极。石墨烯血小板的添加旨在改善电极的性质。这些性质包括但不限于电极的物理，电学和生化特性。这些性质的增强的再现性也可以由添加石墨烯血小板引起。

39. 发明申请

US20120255860A1 CARBON-BASED ELECTRODES WITH GRAPHENE MODIFICATION 审中-公开
标题翻译：具有石墨改性的碳基电极
公开(公告)号：US20120255860A1
公开(公告)日：2012-10-11
申请号：US13517471
申请日：2010-12-21
申请人： Mikhail Briman , Vikram Joshi
发明人： Mikhail Briman , Vikram Joshi
IPC分类号： G01N27/30 , G01N27/327 , B82Y30/00
CPC分类号： G01N27/308 , G01N27/3275 , H01B1/04
摘要： Certain embodiments of the present application describe a carbon-based electrode with graphene platelets. The addition of graphene platelets is intended to improve properties of the electrode. These properties include, but are not limited to, physical, electrical, and biochemical properties of the electrode. Enhanced reproducibility of these properties can also result from the addition of the graphene platelets.
摘要翻译：本申请的某些实施方案描述了具有石墨烯片晶的碳基电极。石墨烯血小板的添加旨在改善电极的性质。这些性质包括但不限于电极的物理，电学和生化特性。这些性质的增强的再现性也可以由添加石墨烯血小板引起。

40. 发明授权

US07714398B2 Nanoelectronic measurement system for physiologic gases and improved nanosensor for carbon dioxide 有权
标题翻译：用于生理气体的纳米电子测量系统和改进的二氧化碳纳米传感器
公开(公告)号：US07714398B2
公开(公告)日：2010-05-11
申请号：US11390493
申请日：2006-03-27
申请人： Nadav Ben-Barak , Daniel M. Chang , Jean-Christophe P. Gabriel , Vikram Joshi , Joseph Niemann , Alexander Star , Christian Valcke
发明人： Nadav Ben-Barak , Daniel M. Chang , Jean-Christophe P. Gabriel , Vikram Joshi , Joseph Niemann , Alexander Star , Christian Valcke
IPC分类号： G01N27/414
CPC分类号： G01N33/5438 , A61B5/073 , A61B2562/0285 , B82Y10/00 , B82Y15/00 , B82Y20/00 , H01L51/0048 , H01L51/0052 , H01L51/0545
摘要： A system for measuring an analyte of interest, particularly carbon dioxide, dissolved in a fluid media of a patient including a nanoelectronic sensor and a measurement instrument in communication with the sensor and configured to receive at least a signal from the sensor indicative of a response of the sensor to at least the analyte of interest.
摘要翻译：一种用于测量感兴趣的分析物，特别是二氧化碳的系统，其溶解在患者的流体介质中，包括与所述传感器通信的纳米电子传感器和测量仪器，并且被配置为从所述传感器接收表示响应的信号传感器至少是所关注的分析物。

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