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31. 发明授权

US06770919B2 Indium phosphide heterojunction bipolar transistor layer structure and method of making the same 失效
标题翻译：磷化铟异质结双极晶体管层结构及制作方法
公开(公告)号：US06770919B2
公开(公告)日：2004-08-03
申请号：US10330484
申请日：2002-12-30
申请人： Milton Feng , Shyh Chiang , David C. Caruth
发明人： Milton Feng , Shyh Chiang , David C. Caruth
IPC分类号： H01L29737
CPC分类号： H01L29/66318 , H01L29/0817 , H01L29/0821 , H01L29/1004 , H01L29/7371
摘要： An expitaxial layer structure that achieves reliable, high speed, and low noise device performance in indium phosphide (InP) based heterojunction bipolar transistors (HBTs) for high data rate receivers and optoelectronic integrated circuits (OEIC). The layer consists of an n+ InGaAs subcollector, an n+ InP subcollector, an unintentionally doped InGaAs collector, a carbon-doped base, an n-type InP emitter, an n-type InGaAs etch-stop layer, an n-type InP emitter, and anInGaAS cap layer.
摘要翻译：一种用于高数据速率接收机和光电集成电路（OEIC）的基于磷化铟（InP）的异质结双极晶体管（HBT）的可靠，高速度和低噪声器件性能的外延层结构。该层由n + InGaAs子集电极，n + InP子集电极，无意掺杂的InGaAs集电极，碳掺杂基极，n型InP发射极，n型InGaAs蚀刻停止层，n型InP发射极，和InGaAS盖层。

32. 发明授权

US06717496B2 Electromagnetic energy controlled low actuation voltage microelectromechanical switch 有权
标题翻译：电磁能控制低致动电压微机电开关
公开(公告)号：US06717496B2
公开(公告)日：2004-04-06
申请号：US10008188
申请日：2001-11-13
申请人： Milton Feng , Shyh-Chiang Shen
发明人： Milton Feng , Shyh-Chiang Shen
IPC分类号： H01H5134
CPC分类号： H01H59/0009
摘要： The present invention is an electromagnetic energy, e.g., visible light, controlled low actuation voltage MEMS switch. Stimulation of photovoltaic diodes causes a switching that controls the flow of a signal. A metal or other suitable conductive pad moves freely up and down within brackets, without the need for deformation, in response to the diodes to either ground a signal or permit it to pass. The low activation voltage of the bracketed pad structure permits the use of a reasonable number of photovoltaic diodes to develop sufficient voltage for actuation of the switch, allowing the realization of the present electromagnetic energy, e.g., visible light, controlled MEMS switch in a minimized chip area. The photovoltaic diodes do not require an independent DC power source to operate the switch of the invention. Use of different wavelengths to excite different sets of diodes allows turning on and off of the switch of the invention.
摘要翻译：本发明是一种电磁能，例如可见光，受控低致动电压的MEMS开关。光伏二极管的刺激导致控制信号流的切换。金属或其他合适的导电垫片在支架内自由上下移动，而不需要变形，响应于二极管来接地信号或允许其通过。支架式焊盘结构的低激活电压允许使用合理数量的光伏二极管来开发足够的电压来驱动开关，从而允许实现当前电磁能，例如可见光，受控MEMS开关在最小化的芯片区。光伏二极管不需要独立的直流电源来操作本发明的开关。使用不同波长来激励不同的二极管组允许本发明的开关的导通和关断。

33. 发明授权

US06678943B1 Method of manufacturing a microelectromechanical switch 失效
标题翻译：微机电开关的制造方法
公开(公告)号：US06678943B1
公开(公告)日：2004-01-20
申请号：US09686349
申请日：2000-10-10
申请人： Milton Feng , Shyh-Chiang Shen
发明人： Milton Feng , Shyh-Chiang Shen
IPC分类号： H01H6500
CPC分类号： H01P1/12 , H01H59/0009 , H01H2001/0084 , Y10T29/49002 , Y10T29/49016 , Y10T29/49105
摘要： A method for controlling the flow of signals by selectively switching signals to ground and allowing signals to pass through a signal line based a position of a conductive pad. The method includes the steps of forming a conductive coplanar signal line and ground planes, depositing a first release layer over the signal line and ground planes, and forming a conductive pad spanning portions of both the signal line and ground planes on the first release layer. The method also includes the steps of forming a second release layer over the conductive pad, forming two sets of holes through the first and second release layers down to the ground planes with the two sets of holes being formed around portions of the conductive path, and forming a dielectric suspension in a first set of the two sets of holes. The method further includes the steps of forming a metal contact on the dielectric suspension, forming a metal bracket in the second set of the two sets of holes, and removing the first and second release layers to release the conductive pad.
摘要翻译：一种用于通过选择性地将信号切换到接地并且允许信号通过基于导电焊盘的位置的信号线来控制信号流的方法。该方法包括以下步骤：形成导电共面信号线和接地平面，在信号线和接地平面上沉积第一释放层，以及形成跨越第一释放层上的信号线和接地平面的部分的导电焊盘。该方法还包括以下步骤：在导电焊盘上形成第二释放层，通过第二和第二释放层向下形成两组通向接地平面的孔，其中两组孔围绕导电路径的部分形成，以及在所述两组孔的第一组中形成介电悬浮液。该方法还包括以下步骤：在电介质悬置上形成金属接触，在两组孔的第二组中形成金属托架，以及去除第一和第二释放层以释放导电垫。

34. 发明授权

US08638830B2 Light emitting and lasing semiconductor devices and methods 有权
标题翻译：发光和发光半导体器件及方法
公开(公告)号：US08638830B2
公开(公告)日：2014-01-28
申请号：US12655807
申请日：2010-01-07
申请人： Nick Holonyak, Jr. , Milton Feng , Gabriel Walter
发明人： Nick Holonyak, Jr. , Milton Feng , Gabriel Walter
IPC分类号： H01S5/34 , H01L33/04
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/18311 , H01S5/3412 , H01S5/34313
摘要： A semiconductor light emitting device, including: a heterojunction bipolar light-emitting transistor having a base region between emitter and collector regions; emitter, base, and collector electrodes for coupling electrical signals with the emitter, base, and collector regions, respectively; and a quantum size region in the base region; the base region including a first base sub-region on the emitter side of the quantum size region, and a second base sub-region on the collector side of the quantum size region; and the first and second base sub-regions having asymmetrical band structures.
摘要翻译：一种半导体发光器件，包括：具有发射极和集电极区域之间的基极区域的异质结双极型发光晶体管; 发射极，基极和集电极，用于将电信号分别与发射极，基极和集电极区域耦合; 和基极区域中的量子尺寸区域; 所述基区包括所述量子尺寸区域的发射极侧的第一基极子区域和所述量子尺寸区域的集电极侧的第二基极子区域; 并且具有不对称带结构的第一和第二基底子区域。

35. 发明授权

US08269431B2 Method and apparatus for producing linearized optical signals 有权
标题翻译：用于产生线性化光信号的方法和装置
公开(公告)号：US08269431B2
公开(公告)日：2012-09-18
申请号：US12802439
申请日：2010-06-07
申请人： Han Wui Then , Milton Feng , Nick Holonyak, Jr.
发明人： Han Wui Then , Milton Feng , Nick Holonyak, Jr.
IPC分类号： H04B10/12 , H04B10/02 , H04B10/00 , H05B37/02
CPC分类号： H04B10/50575 , H04B10/588
摘要： A method for producing an optical output in substantially linear relationship with an input electrical AC signal, including the following steps: providing a light-emitting transistor having emitter, base, and collector regions, the light-emitting transistor producing light emission from its base region in response to electrical signals applied with respect to the emitter, base, and collector regions; applying a signal derived from the input signal to the light-emitting transistor; deriving a feedback signal from an electrical operating signal of the light-emitting transistor; applying a predistortion factor to the derived feedback signal to produce a predistorted feedback signal; and combining the predistorted feedback signal with the input signal to produce the signal derived from thr input signal; whereby the light emission comprises an optical output in substantially linear relationship with the input signal.
摘要翻译：一种用于产生与输入电AC信号基本上线性关系的光输出的方法，包括以下步骤：提供具有发射极，基极和集电极区域的发光晶体管，所述发光晶体管从其基极区域产生发光响应于相对于发射极，基极和集电极区域施加的电信号; 将从所述输入信号导出的信号施加到所述发光晶体管; 从所述发光晶体管的电操作信号导出反馈信号; 将预失真因子应用于导出的反馈信号以产生预失真的反馈信号; 以及将所述预失真反馈信号与所述输入信号组合以产生从所述输入信号得到的信号; 由此发光包括与输入信号基本上线性关系的光输出。

36. 发明授权

US08159287B2 Transistor device and method 有权
标题翻译：晶体管器件及方法
公开(公告)号：US08159287B2
公开(公告)日：2012-04-17
申请号：US12287713
申请日：2008-10-10
申请人： Milton Feng , Nick Holonyak, Jr.
发明人： Milton Feng , Nick Holonyak, Jr.
IPC分类号： H03F3/04 , H01L29/66 , H01L21/331
CPC分类号： H01L29/7371 , H01L29/1004 , H01L29/2003 , H01L29/205
摘要： A field-effect transistor device, including: a semiconductor heterostructure comprising, in a vertically stacked configuration, a semiconductor gate layer between semiconductor source and drain layers, the layers being separated by heterosteps; the gate layer having a thickness of less than about 100 Angstroms; and source, gate, and drain electrodes respectively coupled with said source, gate, and drain layers. Separation of the gate by heterosteps, rather than an oxide layer, has very substantial advantages.
摘要翻译：一种场效应晶体管器件，包括：半导体异质结构，其包括在垂直堆叠构造中的半导体源极和漏极层之间的半导体栅极层，所述层被异质体分离; 所述栅极层的厚度小于约100埃; 以及分别与所述源极，栅极和漏极层耦合的源极，栅极和漏极。通过异质体而不是氧化物层分离栅极具有非常显着的优点。

37. 发明申请

US20110164639A1 Light emitting and lasing semiconductor devices and methods 有权
公开(公告)号：US20110164639A1
公开(公告)日：2011-07-07
申请号：US12930199
申请日：2010-12-31
申请人： Nick Holonyak, JR. , Milton Feng , Gabriel Walter , Adam James
发明人： Nick Holonyak, JR. , Milton Feng , Gabriel Walter , Adam James
IPC分类号： H01S5/34 , H05B37/02 , B82Y20/00
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.

38. 发明授权

US07888199B2 PNP light emitting transistor and method 有权
标题翻译： PNP发光晶体管及方法
公开(公告)号：US07888199B2
公开(公告)日：2011-02-15
申请号：US12284829
申请日：2008-09-25
申请人： Gabriel Walter , Nick Holonyak, Jr. , Milton Feng , Richard Chan
发明人： Gabriel Walter , Nick Holonyak, Jr. , Milton Feng , Richard Chan
IPC分类号： H01L31/00
CPC分类号： H01S5/0421 , H01L33/0004 , H01L33/04 , H01S5/06203 , H01S5/183 , H01S5/3054 , H01S5/3095
摘要： A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.
摘要翻译：一种半导体发光晶体管器件，包括：具有p型集电极，n型基极和p型发射极的双极pnp晶体管结构; 与集电极耦合的第一隧道结和与发射极耦合的第二隧道结; 以及与所述第一隧道结耦合的集电极触点，与所述第二隧道结耦合的发射极触点，以及与所述基极耦合的基极触点; 由此，相对于集电极，基极和发射极接触点施加的信号通过基底中的辐射复合导致来自基底的光发射。

39. 发明申请

US20100315018A1 Method and apparatus for producing linearized optical signals 有权
标题翻译：用于产生线性化光信号的方法和装置
公开(公告)号：US20100315018A1
公开(公告)日：2010-12-16
申请号：US12802439
申请日：2010-06-07
申请人： Han Wui Then , Milton Feng , Nick Holonyak, JR.
发明人： Han Wui Then , Milton Feng , Nick Holonyak, JR.
IPC分类号： H05B37/02
CPC分类号： H04B10/50575 , H04B10/588
摘要： A method for producing an optical output in substantially linear relationship with an input electrical AC signal, including the following steps: providing a light-emitting transistor having emitter, base, and collector regions, the light-emitting transistor producing light emission from its base region in response to electrical signals applied with respect to the emitter, base, and collector regions; applying a signal derived from the input signal to the light-emitting transistor; deriving a feedback signal from an electrical operating signal of the light-emitting transistor; applying a predistortion factor to the derived feedback signal to produce a predistorted feedback signal; and combining the predistorted feedback signal with the input signal to produce the signal derived from thr input signal; whereby the light emission comprises an optical output in substantially linear relationship with the input signal.
摘要翻译：一种用于产生与输入电AC信号基本上线性关系的光输出的方法，包括以下步骤：提供具有发射极，基极和集电极区域的发光晶体管，所述发光晶体管从其基极区域产生发光响应于相对于发射极，基极和集电极区域施加的电信号; 将从所述输入信号导出的信号施加到所述发光晶体管; 从所述发光晶体管的电操作信号导出反馈信号; 将预失真因子应用于导出的反馈信号以产生预失真的反馈信号; 以及将所述预失真反馈信号与所述输入信号组合以产生从所述输入信号得到的信号; 由此发光包括与输入信号基本上线性关系的光输出。

40. 发明申请

US20100202484A1 Light emitting and lasing semiconductor devices and methods 有权
标题翻译：发光和发光半导体器件及方法
公开(公告)号：US20100202484A1
公开(公告)日：2010-08-12
申请号：US12655807
申请日：2010-01-07
申请人： Nick Holonyak, JR. , Milton Feng , Gabriel Walter
发明人： Nick Holonyak, JR. , Milton Feng , Gabriel Walter
IPC分类号： H01S5/34 , H01L33/04
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/18311 , H01S5/3412 , H01S5/34313
摘要： A semiconductor light emitting device, including: a heterojunction bipolar light-emitting transistor having a base region between emitter and collector regions; emitter, base, and collector electrodes for coupling electrical signals with the emitter, base, and collector regions, respectively; and a quantum size region in the base region; the base region including a first base sub-region on the emitter side of the quantum size region, and a second base sub-region on the collector side of the quantum size region; and the first and second base sub-regions having asymmetrical band structures.
摘要翻译：一种半导体发光器件，包括：具有发射极和集电极区域之间的基极区域的异质结双极型发光晶体管; 发射极，基极和集电极，用于将电信号分别与发射极，基极和集电极区域耦合; 和基极区域中的量子尺寸区域; 所述基区包括所述量子尺寸区域的发射极侧的第一基极子区域和所述量子尺寸区域的集电极侧的第二基极子区域; 并且具有不对称带结构的第一和第二基底子区域。

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