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31. 发明授权

US4542370A Cascade-comparator A/D converter 失效
标题翻译：级联比较器A / D转换器
公开(公告)号：US4542370A
公开(公告)日：1985-09-17
申请号：US419475
申请日：1982-09-17
申请人： Hisashi Yamada , Shoichi Shimizu
发明人： Hisashi Yamada , Shoichi Shimizu
IPC分类号： H03M1/00 , H03K13/175
CPC分类号： H03M1/16 , H03M1/361
摘要： In an A/D converter in which a first comparator A/D converter for providing the most significant bits of a digital output and a second comparator A/D converter for providing the least significant bits of the digital output are cascaded, a switching circuit is provided between the first A/D converter and the second A/D converter. This switching circuit is responsive to the comparison between an analog input voltage and first comparison reference voltages in the first A/D converter to apply two adjacent first reference voltages between which the analog input voltages lies to both ends of a voltage dividing circuit network of the second A/D converter to thereby provide second comparison reference voltages. In the second A/D converter, the second comparison reference voltages are compared with the analog input voltage by comparators, to provide the least significant bits of a digital output.
摘要翻译：在A / D转换器中，级联用于提供数字输出的最高有效位的第一比较器A / D转换器和用于提供数字输出的最低有效位的第二比较器A / D转换器，设置在第一A / D转换器和第二A / D转换器之间。该开关电路响应于第一A / D转换器中的模拟输入电压和第一比较参考电压之间的比较，以施加两个相邻的第一参考电压，模拟输入电压之间位于模拟输入电压的分压电路网络的两端第二A / D转换器，从而提供第二比较参考电压。在第二A / D转换器中，通过比较器将第二比较参考电压与模拟输入电压进行比较，以提供数字输出的最低有效位。

32. 发明授权

US4327093A 3,7-Disubstituted-2 or 3-cephem-4-carboxylic acid compounds 失效
标题翻译： 3,7-二取代-2或3-头孢烯-4-羧酸化合物
公开(公告)号：US4327093A
公开(公告)日：1982-04-27
申请号：US85684
申请日：1979-10-17
申请人： Ikuo Ueda , Masakazu Kobayashi , Hisashi Yamada , Hiroki Ono
发明人： Ikuo Ueda , Masakazu Kobayashi , Hisashi Yamada , Hiroki Ono
IPC分类号： A61K31/545 , A61K31/546 , A61P31/04 , C07D501/14 , C07D501/18 , C07D501/20 , C07D501/26 , C07D501/28 , C07D501/30 , C07D501/34 , C07D501/38 , C07D501/60
CPC分类号： C07D501/14
摘要： 3,7-Disubstituted-2 or 3-cephem-4-carboxylic acid compounds of the formula: ##STR1## wherein R.sup.1 is acylamino or ar(lower)alkylamino; R.sup.2 is carboxy or carboxy protected by a pharmaceutically acceptable group; --N--R.sup.3, R.sup.4 is di(lower)alkylamino(lower)alkylamino, an unsaturated or saturated 3 to 8 membered heteromonocyclic (lower)alkylamino group containing 1 to 4 nitrogen atoms, an unsaturated or saturated 3 to 8 membered heteromonocyclic (lower)alkylamino group containing 1 to 4 nitrogen atoms substituted by lower alkyl or hydroxy(lower) alkyl, an unsaturated or saturated 5 to 6 membered heteromonocyclic group containing 2 to 4 nitrogen atoms, an unsaturated or saturated 5 to 6 membered heteromonocyclic group containing 2 to 4 nitrogen atoms substituted by lower alkyl or hydroxy(lower)alkyl or hydroxypiperidino, and X is --S-- or ##STR2## and pharmaceutically acceptable salts thereof. The present compounds are useful for the treatment of infectious diseases in animals and human beings.
摘要翻译： 3,7-二取代的2-或3-头孢烯-4-羧酸化合物，其结构式如下：其中R 1是酰氨基或芳（低级）烷基氨基; R2是被药学上可接受的基团保护的羧基或羧基; -N-R3，R4是二（低级）烷基氨基（低级）烷基氨基，含有1-4个氮原子的不饱和或饱和的3至8元杂单环（低级）烷基氨基，不饱和或饱和的3至8元杂单环（低级）由低级烷基或羟基（低级）烷基取代的含有1至4个氮原子的烷基氨基，含2-4个氮原子的不饱和或饱和5至6元杂单环基团，含有2至4个不饱和或饱和的5至6元杂单环基团被低级烷基或羟基（低级）烷基或羟基哌啶子基取代的氮原子，X是-S-或其药学上可接受的盐。本发明化合物可用于治疗动物和人类的感染性疾病。

33. 发明授权

US4109165A RMS circuit 失效
标题翻译： RMS电路
公开(公告)号：US4109165A
公开(公告)日：1978-08-22
申请号：US768367
申请日：1977-02-14
申请人： Masayuki Katakura , Hisashi Yamada
发明人： Masayuki Katakura , Hisashi Yamada
IPC分类号： G01R19/02 , G06G7/24 , H03G7/00 , H03K17/00
CPC分类号： G06G7/24 , G01R19/02 , H03G7/002
摘要： An RMS circuit comprising a logarithmic amplifying circuit, a fullwave rectifying circuit for subjecting an output from the logarithmic amplifying circuit to fullwave rectification, and a smoothing circuit for smoothing an output signal from the fullwave rectifying circuit, wherein the logarithmic amplifying circuit is provided with an operational amplifier whose noninverting input terminal is grounded and whose inverting input terminal is connected to a signal source; a first npn transistor whose collector is connected to the inverting input terminal of the operational amplifier and whose base is grounded; a first diode whose anode is connected to the emitter of the first npn transistor and whose cathode is connected to the output terminal of the operational amplifier; a second diode whose anode is connected to the output terminal of the operational amplifier; and a third diode whose anode is connected to the cathode of the second diode and whose cathode is connected to the noninverting input terminal of the operational amplifier.

34. 发明授权

US4023053A Variable capacity diode device 失效
标题翻译：可变容量二极管器件
公开(公告)号：US4023053A
公开(公告)日：1977-05-10
申请号：US640891
申请日：1975-12-15
申请人： Shoichi Shimizu , Hisashi Yamada
发明人： Shoichi Shimizu , Hisashi Yamada
IPC分类号： H01L23/31 , H01L23/495 , H01L25/07 , H01L29/93 , H03K17/00
CPC分类号： H01L29/93 , H01L23/3107 , H01L23/49562 , H01L24/05 , H01L24/48 , H01L25/072 , H01L2224/04042 , H01L2224/05009 , H01L2224/05552 , H01L2224/05554 , H01L2224/05556 , H01L2224/05624 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/49171 , H01L24/49 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01055 , H01L2924/01058 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/10272 , H01L2924/12036 , H01L2924/14 , H01L2924/3011
摘要： A semiconductor chip including at least three variable capacity diodes for use at a frequency of 30 to 300 megaherzs is mounted on a grounding member so as to be sealed within a package. A plurality of external connection conductors each coupled to the diode and a plurality of external ground conductors coupled to the grounding member extend out of the package. Each ground conductor is disposed between the adjacent two of the external ground conductors. The arrangement permits a decrease of interference occurring due to a stray capacitance between the diodes.
摘要翻译：将包括至少三个可变容量二极管的半导体芯片安装在接地件上，以将其密封在一个封装内。每个耦合到二极管的多个外部连接导体和耦合到接地构件的多个外部接地导体延伸出封装。每个接地导体设置在相邻的两个外部接地导体之间。该布置允许减少由于二极管之间的杂散电容而发生的干扰。

35. 发明授权

US08779471B2 Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer 失效
标题翻译：场效应晶体管，半导体晶片，场效应晶体管的制造方法及半导体晶片的制造方法
公开(公告)号：US08779471B2
公开(公告)日：2014-07-15
申请号：US13413216
申请日：2012-03-06
申请人： Masahiko Hata , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
发明人： Masahiko Hata , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L21/26553 , H01L29/4966 , H01L29/517 , H01L29/66318 , H01L29/66522
摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0
摘要翻译：提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成的In x Ga 1-x As y 1 P 1-y 1（0

36. 发明授权

US08217296B2 Fluid-quality control method, fluid-quality control apparatus, and electric-discharge machining apparatus employing the same 有权
标题翻译：流体质量控制方法，流体质量控制装置和采用该方法的放电加工装置
公开(公告)号：US08217296B2
公开(公告)日：2012-07-10
申请号：US11997881
申请日：2006-04-05
申请人： Hisakatsu Kawarai , Shuuichiro Ishihara , Yooji Nakajima , Hisashi Yamada
发明人： Hisakatsu Kawarai , Shuuichiro Ishihara , Yooji Nakajima , Hisashi Yamada
IPC分类号： B23H1/10 , C02F1/42
CPC分类号： B23H1/10 , B23H7/36
摘要： Target fluid is made into electrolyte solution when measured fluid-quality value is lower than a first condition value, by substituting an impurity anion contained in the target fluid with a predetermined anion and substituting an impurity cation contained in the target fluid with a predetermined cation, and purified when the fluid-quality value is higher than a second condition value. The above procedures are repeated, so that the fluid-quality value of the target fluid falls within a predetermined range, to make the target fluid into electrolyte solution with a correlation between pH and conductivity.
摘要翻译：当测量的流体质量值低于第一条件值时，通过用预定的阴离子代替包含在目标流体中的杂质阴离子并用预定的阳离子代替目标流体中所含的杂质阳离子，将目标流体制成电解质溶液，并且当流体质量值高于第二条件值时净化。重复上述过程，使得目标流体的流体质量值落在预定范围内，以使目标流体以pH和电导率之间的相关性进入电解质溶液。

37. 发明授权

US08058582B2 Electrical discharge machining apparatus and electrical discharge machining method 有权
标题翻译：放电加工装置和放电加工方法
公开(公告)号：US08058582B2
公开(公告)日：2011-11-15
申请号：US11910581
申请日：2006-10-18
申请人： Hisakatsu Kawarai , Syuichiro Ishihara , Yoji Nakajima , Hisashi Yamada
发明人： Hisakatsu Kawarai , Syuichiro Ishihara , Yoji Nakajima , Hisashi Yamada
IPC分类号： B23H1/10
CPC分类号： B23H1/10 , B23H1/02 , B23H1/08 , B23H11/003
摘要： An electrical-discharge machining apparatus for machining a workpiece using an aqueous machining fluid includes an insulator for electrically insulating a machine platen from the workpiece where the workpiece is placed. A machining-fluid-property measuring instrument measures the state of the machining fluid; and a machining-fluid-property controller maintains the pH of the machining fluid so as to be kept within 8.5 through 10.5.
摘要翻译：一种用于使用水性加工流体加工工件的放电加工装置包括用于使机器压板与放置工件的工件电绝缘的绝缘体。机械流体性能测量仪器测量加工液体的状态; 并且机械液体性质控制器将加工液的pH保持在8.5〜10.5的范围内。

38. 发明授权

US07923752B2 Thin-film crystal wafer having pn junction and method for fabricating the wafer 有权
标题翻译：具有pn结的薄膜晶体晶片和用于制造晶片的方法
公开(公告)号：US07923752B2
公开(公告)日：2011-04-12
申请号：US10046739
申请日：2002-01-17
申请人： Hisashi Yamada , Noboru Fukuhara , Masahiko Hata
发明人： Hisashi Yamada , Noboru Fukuhara , Masahiko Hata
IPC分类号： H01L29/735 , H01L29/739
CPC分类号： H01L29/66318 , H01L29/205
摘要： A thin-film crystal wafer having a pn junction includes a first crystal layer of p GaAs, a second crystal layer of n InxAlyGa1−x−yP, the first and second crystal layers being lattice-matched layers that form a heterojunction, and a control layer of a thin-film of InxAlyGa1−x−yP differing in composition from the n InxAlyGa1−x−yP of the second crystal layer is formed at the interface of the heterojunction. The control layer enables the energy discontinuity at the interface of the InxAlyGa1−x−yP/GaAs heterojunction to be set within a relatively broad range of values and thus enables the current amplification factor and the offset voltage to be matched to specification values by varying the energy band gap at the heterojunction.
摘要翻译：具有pn结的薄膜晶体晶片包括p GaAs的第一晶体层，n In x Al y Ga 1-x-y P的第二晶体层，第一和第二晶体层是形成异质结的晶格匹配层，以及控制在异质结的界面处形成与第二晶体层的n In x Al y Ga 1-x-y P的组成不同的In x Al y Ga 1-x-y P的薄膜层。控制层使InxAlyGa1-x-yP / GaAs异质结的界面处的能量不连续性设定在相对宽的值范围内，从而使电流放大系数和偏移电压能够通过改变异质结能带隙。

39. 发明申请

US20100224596A1 WIRE ELECTRICAL DISCHARGE MACHINING APPARATUS 有权
标题翻译：电线放电加工设备
公开(公告)号：US20100224596A1
公开(公告)日：2010-09-09
申请号：US12377526
申请日：2006-10-24
申请人： Takashi Hashimoto , Yasuo Onodera , Tatsushi Sato , Koichiro Hattori , Hisashi Yamada
发明人： Takashi Hashimoto , Yasuo Onodera , Tatsushi Sato , Koichiro Hattori , Hisashi Yamada
IPC分类号： B23H1/04
CPC分类号： B23H7/04 , B23H7/107
摘要： In a wire electrical discharge machining apparatus, an upper main-discharge power supply is connected between an upper conducting terminal and a workpiece using an upper main-feeder line capable of configuring outward and homeward paths, and a lower main-discharge power supply is connected between a lower conducting terminal and the workpiece using a lower main-feeder line capable of configuring outward and homeward paths. Moreover, a sub-discharge power supply is connected between the upper conducting terminal and the workpiece and between the lower conducting terminal and the workpiece using an upper and a lower sub-feeder lines that have higher impedances than the impedances of the upper and the lower main-feeder lines and can configure outward and homeward paths.
摘要翻译：在线放电加工装置中，上侧主放电电源使用能够构成向外和回路的上部主馈线连接在上导电端子和工件之间，并且连接较低的主放电电源在下导电端子和工件之间使用能够构成向外和回路的下主馈线。此外，使用具有比上下阻抗更高的阻抗的上下辅助线将副放电电源连接在上导电端子和工件之间以及下导电端子与工件之间主馈线，可配置向外和回路。

40. 发明申请

US20100052008A1 ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY WAFER OFF-AXIS CUT 失效
标题翻译：通过波形离轴切割增强氮化物发光二极管的光学极化
公开(公告)号：US20100052008A1
公开(公告)日：2010-03-04
申请号：US12364272
申请日：2009-02-02
申请人： Hisashi Masui , Hisashi Yamada , Kenji Iso , Asako Hirai , Makoto Saito , James S. Speck , Shuji Nakamura , Steven P. DenBaars
发明人： Hisashi Masui , Hisashi Yamada , Kenji Iso , Asako Hirai , Makoto Saito , James S. Speck , Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/32 , H01L33/16
摘要： An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0 and 27°.
摘要翻译：非极性III族氮化物晶片向极（-c）取向的偏轴切割导致比没有这种离轴切割的晶片更高的发光偏振比。已经确认了用于离轴切割的5°角，以提供在0和27°之间的离轴切割的任何其它检查角度的最高偏振比（0.9）。

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