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31. 发明授权

US06561412B2 Method of joining together superconductors and a superconductor joined member produced by same 失效
标题翻译：将超导体和由其制造的超导体接合部件接合在一起的方法
公开(公告)号：US06561412B2
公开(公告)日：2003-05-13
申请号：US09726263
申请日：2000-11-30
申请人： Jyunya Maeda , Susumu Seiki , Teruo Izumi , Yuh Shiohara
发明人： Jyunya Maeda , Susumu Seiki , Teruo Izumi , Yuh Shiohara
IPC分类号： B23K119
CPC分类号： H01L39/02 , Y10S505/917 , Y10S505/918 , Y10S505/919 , Y10S505/92 , Y10S505/925 , Y10S505/926 , Y10S505/927 , Y10T29/49014
摘要： Methods for implementing production of an oxide superconductor joined member, excellent in electric current transmission performance, without a need of going through particularly complex steps, are provided. When joining together oxide superconductors by use of a solder composed of an oxide superconducting material, a finally solidified portion of the solder is positioned in a region where a transmission path of electric current flowing between oxide superconductor base materials as joined together is not obstructed by, for example, disposing the solder on a face of the oxide superconductor base materials, other than butting surfaces of the oxide superconductor base materials, so as to straddle both the base materials like bridge-building. Current flow is also not obstructed by, for example, shaping junction faces of the oxide superconductor base materials such that at least portions of the butting surfaces thereof are in the shape of sloped open faces, parting from each other. Further, an oxide superconductor joined member is made by joining the base materials with each other through the intermediary of an oxide superconductor, serving as a binder, disposed on at least a face of the base materials, other than butting surfaces thereof.
摘要翻译：提供了实现电流传输性能优异的氧化物超导体接合部件的生产方法，而不需要经过特别复杂的步骤。当通过使用由氧化物超导材料构成的焊料将氧化物超导体接合在一起时，焊料的最终固化部分位于在连接在氧化物超导体基材之间的电流的传输路径不被阻挡的区域中，例如，将氧化物超导体基材的除了氧化物超导体基材的对接面以外的焊料配置在跨越基础材料如桥接建筑物的两面上。电流也不会被例如氧化物超导体基材的结合面成形为阻碍，使得其对接表面的至少一部分彼此分开形成倾斜的开放面。另外，氧化物超导体接合部件是通过除了其对接面之外，配置在基材的至少面上的，作为粘合剂的氧化物超导体的中间，将基材彼此接合而制成的。

32. 发明授权

US06139632A Seed crystals, seed crystal holders, and a method for pulling a single crystal 有权
标题翻译：种子晶种，晶种保持器和拉晶单晶的方法
公开(公告)号：US06139632A
公开(公告)日：2000-10-31
申请号：US430166
申请日：1999-10-29
申请人： Teruo Izumi
发明人： Teruo Izumi
IPC分类号： C30B15/32 , C30B15/36 , C30B35/00
CPC分类号： C30B15/32 , C30B15/36 , Y10S117/911 , Y10T117/10
摘要： When a pulled single crystal becomes heavier, the strength of a seed crystal holder made of a carbon material is not sufficient, leading to falling of the single crystal. On the other hand, a seed crystal holder made of metal causes heavy metal contamination, or the strength thereof deteriorates early because of thermal fatigue. Accordingly, a seed crystal holder, comprising an inner cylindrical body made of metal which directly holds a seed crystal, and a carbon cylindrical body arranged around the inner cylindrical body which covers the periphery thereof, is used.
摘要翻译：当拉伸的单晶变得更重时，由碳材料制成的晶种座的强度不足，导致单晶的下落。另一方面，由金属制成的晶种支架由于热疲劳而导致重金属污染，或其强度早期劣化。因此，使用包括直接保持晶种的金属制圆筒体和覆盖其周边的内筒体周围的碳筒体的晶种座。

33. 发明授权

US5932002A Seed crystals for pulling a single crystal and methods using the same 失效
标题翻译：用于拉单晶的晶种和使用它的方法
公开(公告)号：US5932002A
公开(公告)日：1999-08-03
申请号：US919160
申请日：1997-08-28
申请人： Teruo Izumi
发明人： Teruo Izumi
IPC分类号： C30B15/00 , C30B15/36
CPC分类号： C30B29/06 , C30B15/36 , Y10S117/902 , Y10S117/911
摘要： In a conventional method for pulling a single crystal, in order to exclude the dislocation induced in contact of a seed crystal with a melt, a neck having a small diameter has been formed. But when a heavy single crystal having a large diameter of 12 inches or so is pulled, it is impossible to hold the single crystal, leading to the falling. When the diameter of the neck is made larger in order to prevent the falling, the dislocation cannot be excluded, leading to the propagation of the dislocation to the single crystal. In the present invention, using a seed crystal having a cylindrical body and a conical front portion, the induction of the dislocation is inhibited by making the temperature of the front portion almost the same as the temperature of the melt when the front portion of the seed crystal is brought into contact with the melt and a single crystal is pulled without forming a neck after melting part of the front portion into the melt.
摘要翻译：在用于拉制单晶的常规方法中，为了排除在晶种与熔体接触时引起的位错，已经形成了具有小直径的颈部。但是，当大直径为12英寸左右的重单晶被拉出时，不可能保持单晶，导致坠落。为了防止坠落而使颈部的直径变大，不能排除位错，导致位错向单晶的传播。在本发明中，使用具有圆筒体和锥形前部的晶种，通过使种子的前部温度与熔体的温度几乎相同，能够抑制位错的诱导使晶体与熔体接触，并且在将前部的一部分熔化成熔体之后拉出单晶而不形成颈部。

34. 发明授权

US06267816B1 Method for single crystal growth 有权
标题翻译：单晶生长方法
公开(公告)号：US06267816B1
公开(公告)日：2001-07-31
申请号：US09147460
申请日：1999-03-23
申请人： Teruo Izumi
发明人： Teruo Izumi
IPC分类号： C30B1520
CPC分类号： C30B15/305 , Y10S117/917
摘要： This is a method for growing by pulling single crystals 6 using CZ process from material melt 5 to which cusp magnetic field is applied. Inside diameter U of the crucible 3 that contains the material melt 5 is (Y+140 mm) or larger and less than 3Y, where Y stands for outside diameter of the single crystal 6. When cusp magnetic field is applied, high pulling yield is maintained even if the inside diameter U of the crucible is small. Oxygen yield and dislocation free yield are improved by reducing inside diameter U of the crucible. As a result, the yield of manufacturing single crystals 6 is improved.
摘要翻译：这是通过从施加尖点磁场的材料熔体5的CZ工艺拉制单晶6来生长的方法。含有材料熔体5的坩埚3的内径U为（Y + 140mm）以上且小于3Y，其中Y表示单晶6的外径。当施加尖点磁场时，高拉伸屈服强度即使坩埚的内径U小，也保持不变。通过减小坩埚的内径U来提高氧产率和无位错产率。结果，制造单晶6的产率提高。

35. 发明授权

US6019836A Method for pulling a single crystal 失效
标题翻译：拉单晶的方法
公开(公告)号：US6019836A
公开(公告)日：2000-02-01
申请号：US19981
申请日：1998-02-06
申请人： Teruo Izumi
发明人： Teruo Izumi
IPC分类号： C30B15/00 , C30B15/20 , C30B15/22
CPC分类号： C30B15/22
摘要： In a conventional method for pulling a single crystal, a neck having a smaller diameter has been formed in order to exclude dislocation induced in dipping a seed crystal into a melt. However, in pulling a heavy single crystal having a large diameter of 12 inches or more, the single crystal cannot be supported and falls. When the diameter of the neck is large enough to prevent the fall, the dislocation cannot be excluded and propagates to the single crystal. According to the present invention, in a method for pulling a single crystal wherein a seed crystal is brought into contact with a melt within a crucible and then, a neck and a main body are formed, by setting the rotational speed of the seed crystal in the neck formation lower than the rotational speed thereof in the main body formation, dislocation can be efficiently excluded outward even if the neck is not too much narrowed down.
摘要翻译：在用于拉伸单晶的常规方法中，已经形成具有较小直径的颈部，以便排除将晶种浸入熔体中引起的位错。然而，在拉出12英寸以上的大直径的重单晶时，单晶不能被支撑和落下。当颈部的直径足够大以防止坠落时，不能排除位错并传播到单晶。根据本发明，在将晶种与坩埚内的熔体接触，然后形成颈部和主体的单晶拉拔方法中，通过将晶种的旋转速度设定为颈部形成比主体形成中的旋转速度低，即使颈部没有变窄，也能够有效地排除脱位。

36. 发明授权

US5916364A Method and apparatus for pulling a single crystal 失效
标题翻译：用于拉出单晶的方法和装置
公开(公告)号：US5916364A
公开(公告)日：1999-06-29
申请号：US930361
申请日：1998-01-08
申请人： Teruo Izumi
发明人： Teruo Izumi
IPC分类号： C30B15/22 , C30B15/36 , C30B15/20
CPC分类号： C30B15/36 , C30B15/22
摘要： Methods and apparatuses for pulling a single crystal. In a conventional method for pulling a single crystal, a neck having a smaller diameter has been formed in order to exclude dislocation induced in dipping a seed crystal into a melt. But in pulling a heavy single crystal having a large diameter of 12 inches or more, the single crystal cannot be supported and falls. When the diameter of the neck is large enough to prevent the fall, the dislocation can not be excluded and propagates to the single crystal. In the present invention, using an apparatus for pulling a single crystal having a laser beam generator or an incoherent light generating-inducing apparatus, the temperature of the front portion of the seed crystal is gradually raised by being irradiated with the laser beam or the incoherent light, and then, the seed crystal is dipped into the melt. As a result, the induction of the dislocation to the seed crystal caused by a thermal stress is prevented. Then, the single crystal is pulled without forming a neck. Therefore, a heavy single crystal can be pulled. The methods and the apparatuses for pulling a single crystal are used for pulling a single crystal ingot such as an upsized silicon single crystal.
摘要翻译： PCT No.PCT / JP97 / 00594 Sec。 371日期1998年1月8日 102（e）日期1998年1月8日PCT提交1997年2月27日PCT公布。公开号WO97 / 32059 日期1997年9月4日拉单晶的方法和装置。在用于拉伸单晶的常规方法中，已经形成具有较小直径的颈部，以便排除将晶种浸入熔体中引起的位错。但是在拉出12英寸以上的大直径的重晶体时，单晶不能被支撑和下降。当颈部的直径足够大以防止坠落时，不能排除位错并传播到单晶。在本发明中，使用用于拉动具有激光束发生器或非相干光产生诱导装置的单晶的装置，通过用激光束或不相干的方式照射晶种的前部的温度逐渐升高光，然后将晶种浸入熔体中。结果，防止了由热应力引起的对晶种的位错的诱导。然后，拉出单晶而不形成颈部。因此，可以拉出重的单晶。用于拉取单晶的方法和装置用于拉取单晶锭例如大尺寸硅单晶。

37. 发明授权

US06210477B1 Methods for pulling a single crystal 有权
标题翻译：拉单晶的方法
公开(公告)号：US06210477B1
公开(公告)日：2001-04-03
申请号：US09217968
申请日：1998-12-22
申请人： Teruo Izumi , Hideki Watanabe
发明人： Teruo Izumi , Hideki Watanabe
IPC分类号： C30B1500
CPC分类号： C30B15/14 , Y10S117/902 , Y10T117/1068
摘要： The present invention relates to methods for pulling a single crystal wherein the induction of dislocation can be inhibited and a single crystal can be held safely. An apparatus for pulling a single crystal having a straightening vane in the shape of an inverted truncated cone whose upper and lower planes are removed, which is located between a crucible and a single crystal, is used. The gap between the lower end portion of the straightening vane and the surface of a melt filled into the crucible can be selected in the range of 30-200 mm. Where the gap is set large in the range of 30-200 mm, the temperature of the front portion of a seed crystal is raised till the difference in temperature between the front portion thereof and the melt (the range of 1380-1480° C.) becomes almost zero. The seed crystal is brought into contact with the melt, a neck is formed with being heated, and a main body is pulled from the melt. Alternatively, an apparatus for pulling a single crystal having a crucible with through holes formed on the upper part thereof, or an apparatus for pulling a single crystal having an auxiliary heating means which has a body surrounding a seed crystal located near above the melt surface and a transfer mechanism for pulling the body is used in order to achieve the object.
摘要翻译：本发明涉及拉伸单晶的方法，其中可以抑制位错的诱导并且可以安全地保持单晶。使用具有位于坩埚和单晶之间的去除上平面和下平面的倒立锥体形状的矫直叶片的单晶的装置。矫直叶片的下端部与填充到坩埚中的熔融物的表面之间的间隙可以选择在30-200mm的范围内。在间隙设定为30〜200mm的范围内的情况下，晶种的前部的温度上升直到其前部和熔体之间的温度差（1380-1480℃的范围））变成几乎为零。使晶种与熔体接触，在被加热的状态下形成颈部，并且从熔体中拉出主体。或者，一种用于拉出具有形成在其上部的通孔的坩埚的单晶的装置，或用于拉动具有辅助加热装置的单晶的装置，该辅助加热装置具有围绕位于熔融表面附近的晶种的身体，使用用于拉动身体的传送机构来实现该目的。

38. 发明授权

US6015461A Seed crystal holders, for pulling a single crystal 失效
标题翻译：种晶晶座，用于拉单晶
公开(公告)号：US6015461A
公开(公告)日：2000-01-18
申请号：US929118
申请日：1997-09-15
申请人： Teruo Izumi
发明人： Teruo Izumi
IPC分类号： C30B15/00 , C30B15/32 , C30B15/36 , C30B35/00
CPC分类号： C30B29/06 , C30B15/32 , C30B15/36 , Y10S117/911 , Y10T117/10 , Y10T117/1072
摘要： When a pulled single crystal becomes heavier, the strength of a seed crystal holder made of a carbon material is not sufficient, leading to falling of the single crystal. On the other hand, a seed crystal holder made of metal causes heavy metal contamination, or the strength thereof deteriorates early because of thermal fatigue. Accordingly, a seed crystal holder, comprising an inner cylindrical body made of metal which directly holds a seed crystal, and a carbon cylindrical body arranged around the inner cylindrical body which covers the periphery thereof, is used.
摘要翻译：当拉伸的单晶变得更重时，由碳材料制成的晶种座的强度不足，导致单晶的下落。另一方面，由金属制成的晶种支架由于热疲劳而导致重金属污染，或其强度早期劣化。因此，使用包括直接保持晶种的金属制圆筒体和覆盖其周边的内筒体周围的碳筒体的晶种座。

39. 发明授权

US5993539A Method for pulling a single crystal 失效
标题翻译：拉单晶的方法
公开(公告)号：US5993539A
公开(公告)日：1999-11-30
申请号：US19982
申请日：1998-02-06
申请人： Teruo Izumi
发明人： Teruo Izumi
IPC分类号： C30B15/22 , C30B15/00 , C30B15/36 , C30B29/06 , H01L21/208 , C30B15/20
CPC分类号： C30B29/06 , C30B15/36
摘要： In a conventional method for pulling a single crystal, a neck having a smaller diameter has been formed in order to exclude dislocation induced in dipping a seed crystal into a melt. However, in pulling a heavy single crystal having a large diameter of 12 inches or more, the single crystal cannot be supported and falls. When the diameter of the neck is large enough to prevent the fall, the dislocation cannot be excluded and propagates to the single crystal. In the present invention, when the distance between the lowest end of the seed crystal and the melt is 10-100 mm, the seed crystal is caused to stop descending and is preheated. Then, by bringing the seed crystal into contact with the melt at a gradually decreased descent speed, dislocation is not induced to the single crystal and the single crystal is formed without a neck.
摘要翻译：在用于拉伸单晶的常规方法中，已经形成具有较小直径的颈部，以便排除将晶种浸入熔体中引起的位错。然而，在拉出12英寸以上的大直径的重单晶时，单晶不能被支撑和落下。当颈部的直径足够大以防止坠落时，不能排除位错并传播到单晶。在本发明中，当晶种的最低端与熔体之间的距离为10〜100mm时，使晶种停止下降并预热。然后，通过以逐渐降低的下降速度使晶种与熔体接触，不会对单晶发生位错，并且在没有颈部的情况下形成单晶。

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