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    • 37. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20100188163A1
    • 2010-07-29
    • US12695192
    • 2010-01-28
    • Satoshi GOTOTomoyuki MiyakeMasao Kondo
    • Satoshi GOTOTomoyuki MiyakeMasao Kondo
    • H01P1/10H01L27/12
    • H01L21/823425H01L21/823456H01L21/823462H01L27/088
    • In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate.Each of a TX series transistor, an RX series transistor, and an RX shunt transistor is comprised of a low voltage MISFET, while a TX shunt transistor is comprised of a high voltage MISFET. Thus, by reducing the number of serial connections of the high voltage MISFETs constituting the TX shunt transistor, the nonuniformity of the voltage amplitudes applied to the respective serially-coupled high voltage MISFETs is suppressed. As a result, the generation of high-order harmonics can be suppressed.
    • 考虑到实现天线开关的成本降低,提供了即使当天线开关由在硅衬底上形成的场效应晶体管构成时,也可以尽可能地减少天线开关中产生的谐波失真的技术。 TX系列晶体管,RX系列晶体管和RX分流晶体管中的每一个由低电压MISFET组成,而TX并联晶体管由高电压MISFET组成。 因此,通过减少构成TX并联晶体管的高电压MISFET的串联连接数,可抑制施加到各串联耦合的高电压MISFET的电压幅度的不均匀性。 结果,可以抑制高次谐波的产生。