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31. 发明授权

US08222442B2 Phosphorylcholine group-containing compound, method of manufacturing a phosphorylcholine group-containing compound, surface-modifying agent, and a method of modifying a surface using a surface-modifying agent 有权
公开(公告)号：US08222442B2
公开(公告)日：2012-07-17
申请号：US13287695
申请日：2011-11-02
申请人： Kazuyuki Miyazawa , Yukimitsu Suda
发明人： Kazuyuki Miyazawa , Yukimitsu Suda
IPC分类号： C07F9/11
CPC分类号： A61Q19/00 , A61K8/553 , A61K2800/56 , C07F9/091
摘要： A phosphorylcholine group-containing compound that is a structure having a phosphorylcholine group represented by the following formula 1 and an amino group or a group derived from an amino group in an identical compound. (In the formula, m is 2 or more and 6 or less and p is 1 or 2. Each of X1, X2 and X3 is an alkyl group whose carbon number is 1 or more and 6 or less.)

32. 发明申请

US20110130583A1 Phosphorylcholine Group-Containing Compound And Surface Modifying Agent Composed Of Such Compound 有权
标题翻译：由这种化合物组成的含有磷酰胆碱的化合物和表面改性剂
公开(公告)号：US20110130583A1
公开(公告)日：2011-06-02
申请号：US12955086
申请日：2010-11-29
申请人： Yousuke Toujo , Kazuyuki Miyazawa , Taketoshi Kanda , Hiroshi Kutsuna , Kenichi Sakuma , Masayoshi Wada , Yukimitsu Suda
发明人： Yousuke Toujo , Kazuyuki Miyazawa , Taketoshi Kanda , Hiroshi Kutsuna , Kenichi Sakuma , Masayoshi Wada , Yukimitsu Suda
IPC分类号： C07F9/09
CPC分类号： B01J20/286 , B01J20/28004 , B01J20/28019 , B01J20/28057 , B01J20/28078 , B01J20/289 , B01J20/3092 , B01J20/3204 , B01J20/3246 , B01J20/3257 , B01J20/3259 , B01J2220/54 , B01J2220/58 , B01L3/569 , B01L2300/163 , C07F9/091
摘要： A phosphorylcholine group-containing chemical compound represented by the following formula (1). In this formula, m denotes 2-6 and n denotes 1-4.X1, X2, and X3, independent of each other, denote a methoxy group, ethoxy group, or halogen. Up to two of X1, X2, and X3 can be any of the following groups: a methyl group, ethyl group, propyl group, isopropyl group, butyl group, or isobutyl group.R is one of the structures in the following formulas (2)-(4) (the chemical compound of formula (1) in the structures of the following formulas (2)-(4) is expressed as A-R—B). In formulas (2)-(4), L is 1-6, P is 1-3.Also a surface modifier consisting of the aforementioned phosphorylcholine group-containing chemical compound, modified powder treated with said surface modifier, a chromatography packing consisting of a modified carrier treated with said surface modifier, a filter treated with said surface modifier, and a glass device treated with said surface modifier.
摘要翻译：由下式（1）表示的含磷酰胆碱基的化合物。在该式中，m表示2-6，n表示1-4。 X1，X2和X3彼此独立地表示甲氧基，乙氧基或卤素。 X1，X2，X3中的2个以上可以是甲基，乙基，丙基，异丙基，丁基或异丁基中的任一种。 R是下式（2） - （4）中的结构之一（下式（2） - （4）的结构中的式（1）的化合物表示为A-R-B）。在式（2） - （4）中，L为1-6，P为1-3。还有一种由上述含磷酰胆碱基团的化合物组成的表面改性剂，用所述表面改性剂处理的改性粉末，由用所述表面改性剂处理的改性载体组成的色谱填料，用所述表面改性剂处理的过滤器和处理过的玻璃装置与所述表面改性剂。

33. 发明申请

US20100137133A1 Affinity Particle And Affinity Separation Method 失效
标题翻译：亲和粒子和亲和力分离法
公开(公告)号：US20100137133A1
公开(公告)日：2010-06-03
申请号：US12495936
申请日：2009-07-01
申请人： Katsuyuki Maeno , Kazuyuki Miyazawa , Akira Ishikubo , Kazuhiko Ishihara
发明人： Katsuyuki Maeno , Kazuyuki Miyazawa , Akira Ishikubo , Kazuhiko Ishihara
IPC分类号： B01J20/22
CPC分类号： B01J20/286 , B01D15/3804 , B01J20/28004 , B01J20/3204 , B01J20/3219 , B01J20/3242 , B01J20/3248 , B01J20/3259 , B01J20/3274 , B01J20/3285 , B01J2220/58 , C07F9/091 , G01N33/54393
摘要： The present invention is affinity particles that are characterized by having phosphorylcholine groups represented by the following formula (1) covalently bonded onto the surface of inorganic powder and also by having ligands having specific affinity with a certain target substance covalently bonded or adsorbed onto the surface of inorganic powder.The object of the present invention is to provide an affinity separation method that uses affinity particles utilizing inexpensive inorganic particles and is capable of separating the target substance easily and with high accuracy.
摘要翻译：本发明是亲水性粒子，其特征在于将由下式（1）表示的磷酸胆碱基团共价键合到无机粉末的表面上，并且还具有与某种共价键合或吸附在表面上的某些目标物质具有特异亲和力的配体无机粉末。本发明的目的是提供使用廉价的无机粒子的亲和粒子的亲和力分离方法，能够容易且高精度地分离目标物质。

34. 发明申请

US20090321358A1 Affinity Particle And Method Of Affinity Separation 审中-公开
标题翻译：亲和粒子和亲和力分离方法
公开(公告)号：US20090321358A1
公开(公告)日：2009-12-31
申请号：US12552322
申请日：2009-09-02
申请人： Kazuyuki Miyazawa , Katsuyuki Maeno
发明人： Kazuyuki Miyazawa , Katsuyuki Maeno
IPC分类号： B01D15/38
CPC分类号： G01N33/54393 , B01D15/3804 , B01J20/286 , B01J20/321 , B01J20/3212 , B01J20/3219 , B01J20/3236 , B01J20/3251 , B01J20/3274 , B01J20/3285 , C07F9/091 , Y10T428/2991
摘要： The present invention is affinity particles that are characterized by having phosphorylcholine groups represented by the following formula (1) covalently bonded onto the surface of organic particles and also by having ligands having specific affinity with a certain target substance covalently bonded or adsorbed onto the surface of organic particles.The object of the present invention is to provide an affinity separation method that uses affinity particles utilizing organic particles and is capable of separating the target substance easily and with high accuracy.
摘要翻译：本发明是亲水性粒子，其特征在于具有共价键合在有机粒子表面上的下式（1）表示的磷酸胆碱基团，也可以通过使具有与某种目标物质具有特异亲和性的配体共价结合或吸附在有机颗粒。本发明的目的是提供一种使用有机颗粒的亲和粒子并且能够容易且高精度地分离目标物质的亲和力分离方法。

35. 发明授权

US07345929B2 Semiconductor memory device and defect remedying method thereof 失效
公开(公告)号：US07345929B2
公开(公告)日：2008-03-18
申请号：US11714867
申请日：2007-03-07
申请人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
发明人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
IPC分类号： G11C7/10
CPC分类号： H01L24/06 , G11C5/025 , G11C5/04 , G11C5/063 , G11C11/406 , G11C29/06 , G11C29/12005 , G11C29/12015 , G11C29/24 , G11C29/34 , G11C29/50 , G11C29/50012 , G11C29/70 , G11C29/80 , G11C29/804 , G11C29/832 , G11C29/844 , G11C2029/2602 , H01L24/05 , H01L24/45 , H01L24/48 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L27/11898 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05624 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/73215 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01043 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01054 , H01L2924/01055 , H01L2924/01058 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

36. 发明申请

US20060060533A1 Method of modifying surface of material 有权
标题翻译：修饰材料表面的方法
公开(公告)号：US20060060533A1
公开(公告)日：2006-03-23
申请号：US10536066
申请日：2003-11-20
申请人： Kazuyuki Miyazawa , Taketoshi Kanda , Yousuke Toujo , Aya Ohkubo , Osamu Shirota , Kenichi Sukuma , Masayoshi Wada
发明人： Kazuyuki Miyazawa , Taketoshi Kanda , Yousuke Toujo , Aya Ohkubo , Osamu Shirota , Kenichi Sukuma , Masayoshi Wada
IPC分类号： C02F1/28 , B01J20/22 , G01N1/28
CPC分类号： B01J20/28019 , B01J20/103 , B01J20/28057 , B01J20/28078 , B01J20/286 , B01J20/3204 , B01J20/3219 , B01J20/3242 , B01J20/3259 , B01J20/3272 , B01J20/3276 , B01J2220/54 , B01J2220/58 , C08J7/12 , Y10T428/139 , Y10T428/2991
摘要： A method for surface modification of a material by means of introducing the phosphorylcholine group represented by the following formula (1-1) onto the surface of the material by treating a material having amino groups with a chemical compound containing an aldehyde derivative obtained by the oxidative ring-opening reaction of glycerophosphorylcholine. The method of the present invention provides various materials such as medical materials having superior biocompatibility and hydrophilicity.
摘要翻译：通过将具有氨基的材料与含有通过氧化性的醛衍生物获得的醛衍生物的化合物进行处理，通过将下式（1-1）表示的磷酸胆碱基团引入到材料的表面上来对材料进行表面改性的方法甘油磷酰胆碱的开环反应。

37. 发明授权

US07016236B2 Semiconductor memory device and defect remedying method thereof 失效
标题翻译：半导体存储器件及其缺陷补救方法
公开(公告)号：US07016236B2
公开(公告)日：2006-03-21
申请号：US11101504
申请日：2005-04-08
申请人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
发明人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
IPC分类号： G11C16/04
CPC分类号： H01L24/06 , G11C5/025 , G11C5/04 , G11C5/063 , G11C11/406 , G11C29/06 , G11C29/12005 , G11C29/12015 , G11C29/24 , G11C29/34 , G11C29/50 , G11C29/50012 , G11C29/70 , G11C29/80 , G11C29/804 , G11C29/832 , G11C29/844 , G11C2029/2602 , H01L24/05 , H01L24/45 , H01L24/48 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L27/11898 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05624 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/73215 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01043 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01054 , H01L2924/01055 , H01L2924/01058 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.
摘要翻译：形成在半导体芯片上的半导体存储器件包括多个第一存储器阵列，多个第二存储器阵列，第一电压发生器和多个第一焊盘。半导体芯片被分成第一矩形区域，第二矩形区域和第三矩形区域，并且第三矩形区域被布置在第一矩形区域和第二矩形区域之间。多个第一存储器阵列形成在第一矩形区域中。多个第二存储器阵列形成在第二矩形区域中。电压发生器和多个第一接合焊盘被布置在第三矩形区域中。多个第一接合焊盘布置在第一矩形区域和电压发生器之间，并且在电压发生器和多个第二存储器阵列之间没有布置接合焊盘。

38. 发明授权

US06788572B2 Non-volatile multi-level semiconductor flash memory device and method of driving same 有权
标题翻译：非易失性多级半导体闪存器件及其驱动方法
公开(公告)号：US06788572B2
公开(公告)日：2004-09-07
申请号：US10455409
申请日：2003-06-06
申请人： Naoki Yamada , Hiroshi Sato , Tetsuya Tsujikawa , Kazuyuki Miyazawa
发明人： Naoki Yamada , Hiroshi Sato , Tetsuya Tsujikawa , Kazuyuki Miyazawa
IPC分类号： G11C1134
CPC分类号： G11C16/0483 , G11C7/1006 , G11C8/00 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/08 , G11C16/10 , G11C16/26 , G11C2211/5621
摘要： In a nonvolatile semiconductor memory device in which a plurality of threshold values are set to store multi-level data in a memory cell, bits of multi-bit data are separately written into a memory cell according to an address signal or a control signal to effect the reading and erasing. Concretely, the memory array is so constituted that it can be accessed by three-dimensional address of X, Y and Z, and multi-bit data in the memory cell is discriminated by the Z-address.
摘要翻译：在其中设置多个阈值以将多电平数据存储在存储单元中的非易失性半导体存储器件中，根据地址信号或控制信号将多位数据的位分别写入存储器单元阅读和删除。具体地说，存储器阵列被构造成可以通过X，Y和Z的三维地址来访问，存储器单元中的多位数据由Z地址区分。

39. 发明授权

US06590808B1 Non-volatile multi-level semiconductor flash memory device and method of driving same 有权
公开(公告)号：US06590808B1
公开(公告)日：2003-07-08
申请号：US10288334
申请日：2002-11-06
申请人： Naoki Yamada , Hiroshi Sato , Tetsuya Tsujikawa , Kazuyuki Miyazawa
发明人： Naoki Yamada , Hiroshi Sato , Tetsuya Tsujikawa , Kazuyuki Miyazawa
IPC分类号： G11C1134
CPC分类号： G11C16/0483 , G11C7/1006 , G11C8/00 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/08 , G11C16/10 , G11C16/26 , G11C2211/5621
摘要： In a nonvolatile semiconductor memory device in which a plurality of threshold values are set to store multi-level data in a memory cell, bits of multi-bit data are separately written into a memory cell according to an address signal or a control signal to effect the reading and erasing. Concretely, the memory array is so constituted that it can be accessed by three-dimensional address of X, Y and Z, and multi-bit data in the memory cell is discriminated by the Z-address.

40. 发明授权

US06391288B1 Microcapsule and method of making the same 有权
标题翻译：微胶囊及其制作方法
公开(公告)号：US06391288B1
公开(公告)日：2002-05-21
申请号：US09625504
申请日：2000-07-26
申请人： Kazuyuki Miyazawa , Isamu Kaneda , Toshio Yanaki
发明人： Kazuyuki Miyazawa , Isamu Kaneda , Toshio Yanaki
IPC分类号： A61K742
CPC分类号： A61Q19/00 , A61K8/0208 , A61K8/0212 , A61K8/11 , A61K8/73 , A61K9/5036 , A61K2800/28 , A61K2800/412 , A61Q1/02 , A61Q1/06 , A61Q1/08 , A61Q15/00 , A61Q17/04 , Y10S514/844 , Y10S514/937
摘要： A microcapsule of the present invention is characterized in that it encapsulate oil droplets having average particle size of 0.01 to 3 &mgr;m and its capsulating agent is a hydrophilic polymer gelling agent. The main component of the capsulating agent is preferably a hydrophilic polymer gelling agent which hardens by heating and cooling, and, in particular, agar or carrageenan. In the making method of the present invention, a microcapsule can be made efficiently due to no loss in the inner oil phase, and its particle size can easily be controlled. The microcapsule is excellent in shearing-resistance, store stability. Also, if the fracture strength of the microcapsule is within a specific range, a microcapsule which releasing characteristic of encapsulated oil droplets when applied is immediately-, gradually- or non-releasing can be obtained. Further, when such a hydrophilic microcapsule is coated, the contraction in air, dispersibility to various medium, and elusion of encapsulated components in medium can be also improved.
摘要翻译：本发明的微胶囊的特征在于，其包封平均粒度为0.01〜3μm的油滴，其包封剂为亲水性聚合物胶凝剂。封装剂的主要成分优选为通过加热和冷却而硬化的亲水性聚合物胶凝剂，特别是琼脂或角叉菜胶。在本发明的制造方法中，由于内部油相中没有损失，可以有效地制造微胶囊，并且可以容易地控制其粒径。该微胶囊具有优异的抗剪切性，稳定性。此外，如果微胶囊的断裂强度在特定范围内，则可以获得当施加时封装油滴的特性释放的微胶囊即时，逐渐或不释放。此外，当涂布这样的亲水性微胶囊时，也可以提高空气中的收缩，各种介质的分散性和包封成分在培养基中的脱落。

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