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31. 发明授权

US06787483B1 Gap fill for high aspect ratio structures 有权
标题翻译：间隙填充高纵横比结构
公开(公告)号：US06787483B1
公开(公告)日：2004-09-07
申请号：US10442846
申请日：2003-05-20
申请人： Atiye Bayman , Md Sazzadur Rahman , Weijie Zhang , Bart van Schravendijk , Vishal Gauri , George D. Papasoulitotis , Vikram Singh
发明人： Atiye Bayman , Md Sazzadur Rahman , Weijie Zhang , Bart van Schravendijk , Vishal Gauri , George D. Papasoulitotis , Vikram Singh
IPC分类号： H01L2131
CPC分类号： H01L21/02129 , C23C16/045 , C23C16/402 , H01J2237/3327 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02274 , H01L21/3144 , H01L21/3145 , H01L21/31608 , H01L21/31625 , H01L21/31629 , H01L21/76224
摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.
摘要翻译：使用化学气相沉积方法来填充高纵横比（通常至少3:1），窄宽度（通常为1.5微米或更小甚至0.15微米以下）间隙，空隙或弱点的发生率显着降低。该沉积工艺涉及在含等离子体CVD反应器的反应混合物中使用氢作为工艺气体。工艺气体还包括电介质形成前体分子，例如硅和含氧分子。

32. 植物专利

USPP13110P2 Lippia alba plant named ‘Bhurakshak’ 有权
标题翻译： Lippia alba植物命名为“Bhurakshak”
公开(公告)号：USPP13110P2
公开(公告)日：2002-10-22
申请号：US09538341
申请日：2000-03-29
申请人： Sushil Kumar , Janak Raj Bahl , Ravi Prakash Bansal , Shri Niwas Garg , Arif Ali Naqvi , Suman Preet Singh Khanuja , Ajit Kumar Shasany , Mahendra Pandurang Darokar , Vikram Singh , Sweta Sinha
发明人： Sushil Kumar , Janak Raj Bahl , Ravi Prakash Bansal , Shri Niwas Garg , Arif Ali Naqvi , Suman Preet Singh Khanuja , Ajit Kumar Shasany , Mahendra Pandurang Darokar , Vikram Singh , Sweta Sinha
IPC分类号： A01H500
CPC分类号： A01H5/02
摘要： A new and distinct mutant plant of Lippia alba called ‘Bhurakshak,’ characterized by novel aroma of the oil constituting 7.2% 1, 8 cineole, 42.3% linalool, 12.9% citral (b) and 14.2% citral (a) as a major terpenoids, and having a unique RAPD profile as shown in FIG. 1 of the drawings.
摘要翻译：一种新的和不同的Lippia alba的突变植物称为“Bhurakshak”，其特征在于油的新颖香气构成主要萜类化合物的7.2％1,8Cineole，42.3％芳樟醇，12.9％柠檬醛（b）和14.2％柠檬醛（a）并且具有如图1所示的唯一RAPD轮廓。

33. 发明授权

US09266035B2 Distillation tower feed device 有权
标题翻译：蒸馏塔进料装置
公开(公告)号：US09266035B2
公开(公告)日：2016-02-23
申请号：US13950870
申请日：2013-07-25
申请人： Vikram Singh , Brian D. Albert , Berne K. Stober
发明人： Vikram Singh , Brian D. Albert , Berne K. Stober
IPC分类号： B01D3/00 , B01D3/06 , B01J4/00 , B01F3/04 , B01D3/30
CPC分类号： B01D3/008 , B01D3/06 , B01D3/30 , B01F3/04 , B01J4/00
摘要： A feed device for a distillation tower has an annular, open-bottomed channel located around the periphery of the feed zone of the tower with an inner wall spaced from the inner curved wall of the tower and a top covering the channel to confer a generally inverted-U shape to the cross section of the channel. One or more tangential feed inlets are provided to admit a heated, mixed phase feed to the tower and direct the feed into and along the channel. One or more vapor scoops are provided for each feed inlet with the scoop(s) located on the inner wall of the channel at a sufficient distance along the channel from the inlet to permit cyclonic separation of vapor and liquid before the vapor in the feed from the inlet enters the scoop(s) and passes through a vapor exit port into the central core of the tower.
摘要翻译：用于蒸馏塔的进料装置具有环形的开口底部通道，其围绕塔的进料区的周边设置有内壁，该内壁与塔的内弯曲壁间隔开，顶部覆盖通道以赋予通常倒置的 -U形状到通道的横截面。提供一个或多个切向进料入口以允许加热的混合相进料到塔中并将进料引导入和沿通道。为每个进料入口提供一个或多个蒸气勺，其中勺位于通道的内壁上，距离入口的通道足够的距离处，以允许蒸气和液体在进料中的蒸汽之前气旋分离，入口进入勺子并通过蒸汽出口进入塔的中心核心。

34. 发明申请

US20150128543A1 MIST ELIMINATOR CONFIGURATION FOR DROPLET REMOVAL IN FOULING SERVICE 有权
标题翻译： MIST消除器配置在卸载服务中删除
公开(公告)号：US20150128543A1
公开(公告)日：2015-05-14
申请号：US14323231
申请日：2014-07-03
申请人： Robert Piszczek , Todd P. Marut , Brian D. Albert , Vikram Singh , Simon Y. Yeung
发明人： Robert Piszczek , Todd P. Marut , Brian D. Albert , Vikram Singh , Simon Y. Yeung
IPC分类号： B01D45/08
CPC分类号： B01D45/08 , B01D45/04 , B01D45/16 , B01D50/002 , F01M13/04 , F01M2013/0433
摘要： Vane type mist eliminator segments are arranged in a plurality of tiers at separate vertically spaced locations in a tower, typically of the upright, cylindrical type, with the eliminator at each tier covering only a portion of the cross section of the tower. The eliminator segment(s) in each tier are laterally displaced in the tower from the adjacent vertically spaced eliminator segments to form a staggered configuration for the segments. Each mist eliminator preferably extends over 50-70% of the cross-sectional area of the tower to leave an open flow passage in the tier; the staggering of the segments and the associated flow passages defines an upward tortuous or zig-zag open flow path for vapors ascending the tower through the open flow passages when the eliminator segment(s) become fouled in use.
摘要翻译：叶片式除雾器段在塔中的分开的垂直间隔的位置处布置成多个层，通常为直立的圆柱形，每层的消除器仅覆盖塔的横截面的一部分。每个层中的消除器段在塔中从相邻的垂直间隔的消除器段横向移位，以形成用于段的交错构造。每个除雾器优选地延伸超过塔的横截面面积的50-70％以在层中留下开放的流动通道; 段和相关联的流动通道的交错限定了当消除器段在使用中被弄脏时，向上弯曲或向上弯曲的开口流动路径，用于通过开放流动通道升高塔的蒸气。

35. 发明申请

US20150074527A1 Remote Control Devices and Related Devices and Systems 审中-公开
标题翻译：遥控设备及相关设备和系统
公开(公告)号：US20150074527A1
公开(公告)日：2015-03-12
申请号：US14023075
申请日：2013-09-10
申请人： Jonathan Christopher Sevigny , Vikram Singh , Anthony John Marino , Trevor Lai
发明人： Jonathan Christopher Sevigny , Vikram Singh , Anthony John Marino , Trevor Lai
IPC分类号： G06F3/16 , G06F3/0481 , G06F3/0484
CPC分类号： G06F3/165 , G06F3/04817 , G06F3/04842 , G11B19/025 , G11B19/027
摘要： A remote control device is provided for controlling an audio playback device. The remote control device includes an input region that is operable to select from a plurality of entities for providing audio content to the audio playback device, and a display for displaying information associated with the entities for providing audio content. The remote control device is configured to request image files from the audio playback device for display on the display. The image files correspond to the entities for providing audio content.
摘要翻译：提供了用于控制音频回放装置的遥控装置。遥控装置包括可操作以从多个实体中选择用于向音频回放装置提供音频内容的输入区域，以及用于显示与用于提供音频内容的实体相关联的信息的显示器。遥控装置被配置为从音频播放装置请求图像文件以在显示器上显示。图像文件对应于用于提供音频内容的实体。

36. 发明授权

US08778603B2 Method and system for modifying substrate relief features using ion implantation 有权
标题翻译：使用离子注入修改底物浮雕特征的方法和系统
公开(公告)号：US08778603B2
公开(公告)日：2014-07-15
申请号：US13046136
申请日：2011-03-11
申请人： Ludovic Godet , Patrick M. Martin , Timothy J. Miller , Vikram Singh
发明人： Ludovic Godet , Patrick M. Martin , Timothy J. Miller , Vikram Singh
IPC分类号： G21G1/10
CPC分类号： H01J37/317 , G03F7/40 , H01J37/3171 , H01J37/3174 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01L21/0273 , H01L21/2236 , H01L21/263 , H01L21/265 , H01L29/66787
摘要： A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.
摘要翻译：一种处理抗蚀剂特征的方法包括在处理室中将在衬底的第一侧上具有一组图案化的抗蚀剂特征的衬底定位，并且在处理室中产生等离子体，其具有与衬底的第一侧相邻的等离子体鞘。该方法可以进一步包括用等离子体护套改性剂修改等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由衬底面向等离子体的前表面限定的平面其中来自等离子体的离子在第一曝光期间在宽的角度范围内撞击在图案化的抗蚀剂特征上。

37. 发明授权

US08083901B2 De-entrainment tray for high capacity operation 有权
标题翻译：脱扣托盘，用于高容量运行
公开(公告)号：US08083901B2
公开(公告)日：2011-12-27
申请号：US12071218
申请日：2008-02-19
申请人： Arun K. Sharma , Theodore Sideropoulos , Berne K. Stober , Brian D. Albert , Alvin U. Chen , Vikram Singh
发明人： Arun K. Sharma , Theodore Sideropoulos , Berne K. Stober , Brian D. Albert , Alvin U. Chen , Vikram Singh
IPC分类号： B01D3/06 , B01D3/20
CPC分类号： B01D1/305 , B01D3/18 , B01D3/20 , B01D3/205
摘要： A de-entrainment device separates entrained liquid from vapor in a fluid stream that flows through a chimney tray in a distillation tower. The separated liquid is collected and shielded from the fluid stream to prevent re-entrainment of the liquid in the vapor flowing upward into the tower. The chimney tray includes risers with hats that have gutters to guide liquid toward the tray deck, channels to collect and drain liquid from the top of the hats to the tray deck, and baffles extending from the risers to shield the liquid collected on the tray deck from the vapor flow.
摘要翻译：去夹带装置将流过流过蒸馏塔中的烟囱式塔板的流体流中的夹带液体与蒸汽分离。分离的液体被收集并从流体流屏蔽，以防止液体向上流入塔中的蒸汽再次夹带。烟囱式托盘包括具有盖子的立管，其具有导槽以将液体引向托盘甲板，通道收集并将液体从帽子的顶部排出到托盘甲板，以及从立管延伸的挡板以屏蔽收集在托盘甲板上的液体从蒸汽流。

38. 发明申请

US20110086501A1 Technique for Processing a Substrate Having a Non-Planar Surface 有权
标题翻译：用于处理具有非平面表面的基板的技术
公开(公告)号：US20110086501A1
公开(公告)日：2011-04-14
申请号：US12902250
申请日：2010-10-12
申请人： George D. Papasouliotis , Vikram Singh , Heyun Yin , Helen L. Maynard , Ludovic Godet
发明人： George D. Papasouliotis , Vikram Singh , Heyun Yin , Helen L. Maynard , Ludovic Godet
IPC分类号： H01L21/30
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32706 , H01J37/32834 , H01L29/66803
摘要： A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.
摘要翻译：公开了一种处理具有水平和非水平表面的衬底的方法。使用离子注入机将基片注入颗粒。在离子注入期间，由于植入过程的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上更厚。该膜的存在可能不利地改变基材的性质。为了纠正这一点，执行第二处理步骤以去除沉积在水平表面上的膜。在一些实施例中，使用蚀刻工艺去除该膜。在一些实施方案中，材料修饰步骤用于改变包含该膜的材料的组成。该材料修饰步骤可以代替或补充蚀刻工艺。

39. 发明申请

US20110000896A1 SYSTEM AND METHOD FOR SELECTIVELY CONTROLLING ION COMPOSITION OF ION SOURCES 有权
标题翻译：用于选择性地控制离子源组成的系统和方法
公开(公告)号：US20110000896A1
公开(公告)日：2011-01-06
申请号：US12496080
申请日：2009-07-01
申请人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
发明人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
IPC分类号： H05H1/34 , H01L21/465
CPC分类号： C23C14/48 , H01J37/32412 , H01J37/32935
摘要： A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
摘要翻译：公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。脉冲长度足以影响电子，但是太快而不能显着影响离子。能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。然后可以优化等离子体组成以满足所使用的具体方法的要求。这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。

40. 发明申请

US20090324849A1 METHOD FOR SEALING PORES IN A POROUS SUBSTRATE 审中-公开
标题翻译：在多孔基材中密封多孔的方法
公开(公告)号：US20090324849A1
公开(公告)日：2009-12-31
申请号：US12344533
申请日：2008-12-28
申请人： George D. PAPASOULIOTIS , Vikram Singh
发明人： George D. PAPASOULIOTIS , Vikram Singh
IPC分类号： H05H1/24 , B05D1/12
CPC分类号： H01L21/76814 , H01L21/3105 , H01L21/76826 , H01L21/76831
摘要： Several embodiments of a method for sealing pores on a porous substrate are disclosed. In one embodiment, the method comprises introducing first particles to the surface of the substrate and damaging the surface to decrease the size of the pores on the surface; introducing second particle to the surface; and forming a film on the surface covering the pores, where the film has a dielectric constant of 4 or less.
摘要翻译：公开了用于密封多孔基底上的孔的方法的几个实施例。在一个实施方案中，所述方法包括将第一颗粒引入到所述基材的表面并损坏所述表面以减小所述表面上的孔的尺寸; 将第二颗粒引入表面; 并且在覆盖孔的表面上形成膜，其中该膜的介电常数为4或更小。

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