专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07824846B2 Tapered edge bead removal process for immersion lithography 失效
标题翻译：用于浸没式光刻的锥形边缘珠去除工艺
公开(公告)号：US07824846B2
公开(公告)日：2010-11-02
申请号：US11857764
申请日：2007-09-19
申请人： Colin J. Brodsky
发明人： Colin J. Brodsky
IPC分类号： G03F7/26
CPC分类号： G03F7/2028 , G03F7/70341
摘要： A method and apparatus for forming a tapered photoresist edge. The method includes: forming a photoresist layer on a substrate; exposing a first annular region of the photoresist layer adjacent to a perimeter of the substrate to actinic radiation, the first annular region having a first outer perimeter proximate to a perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate, the actinic radiation gradually decreasing in intensity from the first outer perimeter to the first inner perimeter; and developing the exposed first annular region of the photoresist layer to form a tapered profile in a second annular region of the photoresist layer, the second annular region having a second perimeter proximate to the perimeter of the substrate and a second inner perimeter away from the substrate perimeter, the profile gradually increasing in thickness from the second outer perimeter to the second inner perimeter.
摘要翻译：一种用于形成锥形光致抗蚀剂边缘的方法和装置。该方法包括：在基板上形成光致抗蚀剂层; 将光致抗蚀剂层的与衬底的周边相邻的第一环形区域暴露于光化辐射，第一环形区域具有靠近衬底的周边的第一外周边和远离衬底的周边的第一内周边，光化辐射从第一外围到第一内周的强度逐渐降低; 以及显影所述光致抗蚀剂层的暴露的第一环形区域以在所述光致抗蚀剂层的第二环形区域中形成锥形轮廓，所述第二环形区域具有邻近所述基底的周边的第二周边和离开所述基底的第二内周边轮廓，轮廓的厚度从第二外周边逐渐增加到第二内周。

32. 发明授权

US07494919B2 Method for post lithographic critical dimension shrinking using thermal reflow process 失效
标题翻译：使用热回流工艺的后平版印刷临界尺寸收缩的方法
公开(公告)号：US07494919B2
公开(公告)日：2009-02-24
申请号：US10905579
申请日：2005-01-12
申请人： Colin J. Brodsky , Scott D. Allen
发明人： Colin J. Brodsky , Scott D. Allen
IPC分类号： H01L21/4763
CPC分类号： H01L21/0273 , G03F7/091 , G03F7/40 , H01L21/0276
摘要： A method for reducing the size of a patterned semiconductor feature includes forming a first layer over a substrate to be patterned, and forming a photoresist layer over the first layer. The photoresist layer is patterned so as to expose portions of the first layer, and the exposed portions of the first layer are removed in a manner so as to create an undercut region beneath the patterned photoresist layer. The patterned photoresist layer is reflowed so as to cause reflowed portions of the patterned photoresist layer to occupy at least a portion of the undercut region.
摘要翻译：用于减小图案化半导体特征的尺寸的方法包括在待图案化的衬底上形成第一层，以及在第一层上形成光致抗蚀剂层。图案化光致抗蚀剂层以暴露第一层的部分，并且以使得在图案化的光致抗蚀剂层下面形成底切区域的方式去除第一层的暴露部分。图案化的光致抗蚀剂层被回流以使图案化的光致抗蚀剂层的回流部分占据底切区域的至少一部分。

33. 发明授权

US07493186B2 Method and algorithm for the control of critical dimensions in a thermal flow process 失效
标题翻译：用于控制热流过程中关键尺寸的方法和算法
公开(公告)号：US07493186B2
公开(公告)日：2009-02-17
申请号：US11613238
申请日：2006-12-20
申请人： Colin J. Brodsky , Michael M. Crouse , Allen H. Gabor
发明人： Colin J. Brodsky , Michael M. Crouse , Allen H. Gabor
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G03F7/70508 , G03F7/70558 , G03F7/70625 , G03F7/70875 , G05B2219/32182 , G05B2219/32187 , G05B2219/32188 , G05B2219/37224 , G05B2219/45028 , H01L22/12 , H01L22/20
摘要： A method of controlling one or more critical dimension (CD) features, dependent upon at least a first and a second processing parameter, with a single metrology step, while still enabling decoupled feedback to the first and the second processing parameter, includes an initial process characterization; producing a production piece; a single metrology step to determine the critical dimensions of the produced features; solving a system of equations simultaneously for individual feedback correction values for the first and second processing parameters; and applying the individual feedback correction values to their respective processing parameters.
摘要翻译：一种基于至少第一和第二处理参数的单个度量步骤来控制一个或多个关键维度（CD）特征的方法，同时仍然使能到第一和第二处理参数的解耦反馈，包括初始过程表征生产一块; 一个单一的度量步骤来确定所产生的特征的关键尺寸; 针对第一和第二处理参数的各个反馈校正值同时求解方程组; 以及将各个反馈校正值应用于它们各自的处理参数。

34. 发明授权

US07473461B2 Film stack having under layer for preventing pinhole defects 失效
标题翻译：薄膜叠层具有防止针孔缺陷的底层
公开(公告)号：US07473461B2
公开(公告)日：2009-01-06
申请号：US11827014
申请日：2007-07-10
申请人： Colin J. Brodsky , Wai-Kin Li , Steven A. Scheer
发明人： Colin J. Brodsky , Wai-Kin Li , Steven A. Scheer
IPC分类号： B32B9/00 , B32B33/00
CPC分类号： B32B27/00 , Y10T428/24942 , Y10T428/2495 , Y10T428/265 , Y10T428/31504 , Y10T428/3154 , Y10T428/31544 , Y10T428/31855
摘要： A film stack is provided in which a first film including a first polymer directly contacts a surface of a substrate at which a given material is exposed. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface contacting the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.
摘要翻译：提供了一种膜叠层，其中包括第一聚合物的第一膜直接接触暴露给定材料的基板的表面。可以包括第一聚合物以外的第二聚合物的第二膜被形成为具有与第一膜接触的内表面。如果第二膜直接设置在基板上，则第二膜可以具有第二膜的自由能为负的厚度。理想地，所得到的第二膜基本上没有脱湿缺陷。

35. 发明申请

US20070178404A1 METHODS OF PREVENTING DEFECTS IN ANTIREFLECTIVE COATINGS 审中-公开
标题翻译：防止抗反射涂层缺陷的方法
公开(公告)号：US20070178404A1
公开(公告)日：2007-08-02
申请号：US11307268
申请日：2006-01-30
申请人： Colin J. Brodsky , Mary Jane Brodsky , Wai-Kin Li , Steven A. Scheer
发明人： Colin J. Brodsky , Mary Jane Brodsky , Wai-Kin Li , Steven A. Scheer
IPC分类号： G03C1/00
CPC分类号： G03F7/091
摘要： A method of forming a relief image on a substrate including: applying over a substrate a layer of an antireflective coating; and vacuum processing the antireflective coating. This method reduces the number of pinhole defects present in the antireflective coating.
摘要翻译：一种在衬底上形成凸版图像的方法，包括：在衬底上涂覆抗反射涂层; 并对抗反射涂层进行真空处理。该方法减少了抗反射涂层中存在的针孔缺陷的数量。

36. 发明授权

US07229936B2 Method to reduce photoresist pattern collapse by controlled surface microroughening 有权
标题翻译：通过控制表面微透镜减少光致抗蚀剂图案崩溃的方法
公开(公告)号：US07229936B2
公开(公告)日：2007-06-12
申请号：US10709406
申请日：2004-05-03
申请人： Colin J. Brodsky , Scott J. Bukofsky , Dario L. Goldfarb , Scott D. Halle
发明人： Colin J. Brodsky , Scott J. Bukofsky , Dario L. Goldfarb , Scott D. Halle
IPC分类号： H01L21/31
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/31127 , H01L21/31133 , H01L21/31138 , H01L21/312
摘要： A method is provided for preparing a substrate for photolithographic patterning. The method includes providing a substrate having at least an exposed rough surface layer including a polymeric material. The rough surface layer has surface features characterized by feature step height varying between about two percent and twenty percent of the minimum photolithographic half-pitch. A layer of photoresist material is then provided over the exposed rough surface layer and patterned.
摘要翻译：提供了一种制备用于光刻图案的衬底的方法。该方法包括提供具有至少暴露的包含聚合材料的粗糙表面层的基底。粗糙表面层具有表征特征，其特征在于最小光刻半间距的约百分之二到百分之二的特征步长。然后在暴露的粗糙表面层上提供一层光致抗蚀剂材料并图案化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式