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31. 发明申请

US20070096209A1 Image displaying device and method for manufacturing same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20070096209A1
公开(公告)日：2007-05-03
申请号：US11585967
申请日：2006-10-25
申请人： Yoshiaki Toyota , Mutsuko Hatano
发明人： Yoshiaki Toyota , Mutsuko Hatano
IPC分类号： H01L27/12 , H01L27/01 , H01L21/84 , H01L21/00 , H01L31/0392
CPC分类号： H01L27/12 , H01L27/1248
摘要： A technique for improving the manufacturing yield of an image displaying device is disclosed. A fabrication method of the image displaying device includes the steps of forming on an insulative substrate a plurality of island-like semiconductor layers, forming a gate insulating film on the island-like semiconductor layers, defining more than one contact hole in the gate insulating film, forming a gate electrode on the gate insulator film for causing the island-like semiconductor layer to be in contact with the gate insulator film, forming a source region, a drain region and a channel region interposed therebetween in the island-like semiconductor layer, forming an interlayer dielectric (ILD) film on the gate electrode, forming source/drain electrodes contacted with the source and drain regions and the ILD film, defining a through-hole(s) after formation of the source/drain electrodes, and removing a contact portion of the island-like semiconductor layer and gate electrode.
摘要翻译：公开了一种提高图像显示装置的制造成品率的技术。图像显示装置的制造方法包括以下步骤：在绝缘基板上形成多个岛状半导体层，在岛状半导体层上形成栅极绝缘膜，在栅极绝缘膜中限定多于一个的接触孔在所述栅极绝缘膜上形成用于使所述岛状半导体层与所述栅极绝缘膜接触的栅电极，在所述岛状半导体层中形成源极区域，漏极区域和沟道区域，在栅电极上形成层间电介质（ILD）膜，形成与源极和漏极区域接触的源/漏电极和ILD膜，在形成源/漏电极之后限定出一个或多个通孔，岛状半导体层和栅电极的接触部分。

32. 发明授权

US07193693B2 Apparatus for manufacturing flat panel display devices 有权
标题翻译：用于制造平板显示装置的装置
公开(公告)号：US07193693B2
公开(公告)日：2007-03-20
申请号：US10991482
申请日：2004-11-19
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Takeshi Noda
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Takeshi Noda
IPC分类号： G01N21/00 , G01J1/00 , B23K26/06
CPC分类号： B23K26/073 , B23K26/702 , H01L27/14625
摘要： A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing.In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.
摘要翻译：提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构，使得当入射到激光束整形光学元件上的激光束处于预定条件时，处理测量信号。入射到激光束整形光学元件上的激光束的形状，直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件，基于信号处理的结果。以这种方式，可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。

33. 发明授权

US07183148B2 Display panel and method for manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US07183148B2
公开(公告)日：2007-02-27
申请号：US10914333
申请日：2004-08-10
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.
摘要翻译：在大尺寸绝缘基板上作为单独显示面板形成的绝缘基板部分上的非晶硅膜用线性冷却的连续波（CW）固态激光束照射，同时以固定速度扫描在聚光激光束的宽度方向上。在同一绝缘基板部分中的像素部分和外围电路部分被照射到时间调制的激光束以具有足够高的功率密度以提供预定的结晶度。将非晶硅膜转变成具有对应于要构建在每个像素部分和外围电路部分中的薄膜晶体管所需的性能的结晶度的硅膜。以这种方式，可以获得在像素或外围电路部分所需的最佳结晶度的薄膜晶体管电路，同时保持高通量。因此，可以廉价地提供具有作为显示面板的良好显示特征的产品。

34. 发明申请

US20060029426A1 Active matrix display device 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US20060029426A1
公开(公告)日：2006-02-09
申请号：US11246225
申请日：2005-10-11
申请人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
发明人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
IPC分类号： G03G15/00 , G03G15/22
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66765
摘要： A laser beam is selectively directed to an amorphous silicon film of a pixel portion on an active-matrix substrate of a display device to modify the amorphous silicon film into a polysilicon film. Pixel circuits such as thin film transistors are formed on the modified polysilicon film. Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.
摘要翻译：激光束被选择性地引导到显示装置的有源矩阵基板上的像素部分的非晶硅膜，以将非晶硅膜修改为多晶硅膜。像素电路如薄膜晶体管形成在改性多晶硅膜上。因此，可以显着地实现具有高性能薄膜晶体管电路的有源矩阵基板的显示装置。

35. 发明授权

US06949452B2 Method for fabricating image display device 有权
公开(公告)号：US06949452B2
公开(公告)日：2005-09-27
申请号：US10602738
申请日：2003-06-25
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , H01L21/82 , H01L21/26
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

36. 发明授权

US06903368B2 Thin-film transistor device, its manufacturing process, and image display using the device 失效
标题翻译：薄膜晶体管器件，其制造工艺和使用该器件的图像显示
公开(公告)号：US06903368B2
公开(公告)日：2005-06-07
申请号：US10190670
申请日：2002-07-09
申请人： Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
IPC分类号： G02F1/1345 , G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L27/02 , H01L27/12 , H01L29/04 , H01L29/786 , H01L31/20
CPC分类号： H01L21/02691 , H01L21/02527 , H01L21/02532 , H01L21/02535 , H01L21/02595 , H01L21/02609 , H01L21/2026 , H01L21/268 , H01L27/0207 , H01L27/1214 , H01L27/1285 , H01L27/1296 , H01L29/045 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： A thin film made of silicon or another IV-group crystals (crystals and mixed crystals of C, Ge, Sn, and Pb) is twice scanned with a laser beam moving in two lateral directions in which crystal grains grow larger in order to form high-quality polycrystals in exact positions in the thin film, while defects uncontrollable by the prior arts are being reduced significantly, to realize a high-quality TFT device. The laser-scanning directions are defined by the crystallization face orientations.
摘要翻译：由硅或其他IV族晶体（C，Ge，Sn和Pb的晶体和混晶）制成的薄膜在两个横向移动的激光束被扫描两次，其中晶粒长大以形成高优质的多晶体在薄膜中的确切位置，而现有技术不可控制的缺陷被显着地减少，以实现高质量的TFT器件。激光扫描方向由结晶面取向定义。

37. 发明申请

US20050085021A1 Display device and a method for manufacturing the same 有权
公开(公告)号：US20050085021A1
公开(公告)日：2005-04-21
申请号：US10983683
申请日：2004-11-09
申请人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
发明人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36 , H01L21/00 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： G02F1/13454 , G02F2202/104 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78675
摘要： An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the display device are formed on an image display device substrate of circuit-built-in type thin film transistors having a small circuit occupation surface area. A circuit including thin film transistors of a polycrystalline silicon film anisotropically crystal-grown and having crystal grains aligned in its longitudinal direction with a current direction is provided in the whole or partial surface of the display pixel block and circuit blocks. The longitudinal direction is aligned with a horizontal or vertical direction within the block, and blocks aligned in the horizontal and vertical directions can be arranged as mixed when viewed from an identical straight line.

38. 发明申请

US20050070035A1 Display panel and method for manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US20050070035A1
公开(公告)日：2005-03-31
申请号：US10914333
申请日：2004-08-10
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
IPC分类号： G02F1/1368 , B23K26/06 , B23K26/073 , G09F9/30 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.
摘要翻译：在大尺寸绝缘基板上作为单独显示面板形成的绝缘基板部分上的非晶硅膜用线性冷却的连续波（CW）固态激光束照射，同时以固定速度扫描在聚光激光束的宽度方向上。在同一绝缘基板部分中的像素部分和外围电路部分被照射到时间调制的激光束以具有足够高的功率密度以提供预定的结晶度。将非晶硅膜转变成具有对应于要构建在每个像素部分和外围电路部分中的薄膜晶体管所需的性能的结晶度的硅膜。以这种方式，可以获得在像素或外围电路部分所需的最佳结晶度的薄膜晶体管电路，同时保持高通量。因此，可以廉价地提供具有作为显示面板的良好显示特征的产品。

39. 发明授权

US06635932B2 Thin film crystal growth by laser annealing 失效
公开(公告)号：US06635932B2
公开(公告)日：2003-10-21
申请号：US10213698
申请日：2002-08-06
申请人： Costas P. Grigoropoulos , Mutsuko Hatano , Ming-Hong Lee , Seung-Jae Moon
发明人： Costas P. Grigoropoulos , Mutsuko Hatano , Ming-Hong Lee , Seung-Jae Moon
IPC分类号： H01L2362
CPC分类号： H01L21/02686 , H01L21/2026
摘要： A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature. However, the central part of the liquid pool subjected to continued heating by the first laser beam cools down slowly. Grains nucleated in the periphery of the fully molten spot can therefore grow into the liquid-Si and extend in length until they collide at the center of the first laser beam spot. The first laser beam prolongs the molten Si phase and induces grain growth in a certain direction. The second laser beam triggers nucleation and controls grain location leading to subsequent lateral grain growth.

40. 发明授权

US5442195A Superconducting device including plural superconducting electrodes formed on a normal conductor 失效
标题翻译：超导装置包括形成在正常导体上的多个超导电极
公开(公告)号：US5442195A
公开(公告)日：1995-08-15
申请号：US136984
申请日：1993-10-18
申请人： Kazuo Saitoh , Toshikazu Nishino , Mutsuko Hatano
发明人： Kazuo Saitoh , Toshikazu Nishino , Mutsuko Hatano
IPC分类号： H01L39/22 , H01L27/18 , H01L39/24 , B05D5/12 , G11C11/44 , H01B12/00
CPC分类号： H01L27/18 , Y10S505/832
摘要： A superconducting device may include a superconducting weak link equipped with plural superconducting devices that are used as input-output terminals formed on the same plane and at least one current source for applying current to at least one of these superconducting electrodes. A superconducting device suitable for high integration can be realized as it enables structuring of a superconducting weak link 1 equipped with plural superconducting electrodes 101, 102, 103 and 104 that can be used as input-output terminals and changing symmetry of superconducting electrode arrangement through the form of a normal conductor 201 which is forming a superconducting weak link. In addition, when this superconducting device is used as a quasi-particle injection type device, a superconducting device with plural superconducting electrodes that can be used for a gate electrode, drain electrode or control electrode can be realized. Further, a superconducting device equipped with new functions (e.g. motion as a neuron device) which are capable of high integration can be realized by utilizing these characteristics. Furthermore, being a proximity effect type, superconducting weak link has an advantage of realizing an ultra highspeed, low electricity consuming switching device.
摘要翻译：超导装置可以包括配备有多个超导装置的超导弱连接器，所述多个超导装置用作形成在同一平面上的输入 - 输出端子和用于向这些超导电极中的至少一个施加电流的至少一个电流源。可以实现适用于高集成度的超导装置，因为它能够构成配备有可用作输入 - 输出端子的多个超导电极101,102,103和104的超导弱连接件1，并且通过所述超导电极装置改变超导电极装置的对称性形成超导弱连接的正常导体201的形式。此外，当该超导装置用作准粒子注入型装置时，可以实现具有可用于栅电极，漏电极或控制电极的多个超导电极的超导装置。此外，可以通过利用这些特性来实现配备有能够高集成度的新功能（例如作为神经元装置的运动）的超导装置。此外，作为接近效应型，超导弱连接具有实现超高速，低耗电开关器件的优点。

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