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    • 37. 发明申请
    • Integrated circuit device and electronic instrument
    • 集成电路器件和电子仪器
    • US20070013685A1
    • 2007-01-18
    • US11270694
    • 2005-11-10
    • Satoru KodairaNoboru ItomiShuji KawaguchiTakashi KumagaiHisanobu IshiyamaKazuhiro Maekawa
    • Satoru KodairaNoboru ItomiShuji KawaguchiTakashi KumagaiHisanobu IshiyamaKazuhiro Maekawa
    • G09G5/00
    • G09G3/2007G09G2310/027G09G2360/18
    • An integrated circuit device having a display memory, wherein a plurality of first power supply interconnects VSSL for supplying a first power supply voltage VSS to memory cells MC are formed in a metal interconnect layer in which a plurality of wordlines WL are formed; and wherein a plurality of second power supply interconnects VDDL for supplying a second power supply voltage VDD to the memory cells are formed in another metal interconnect layer in which a plurality of bitlines BL are formed, the second power supply voltage VDD being higher than the first power supply voltage VSS. A plurality of bitline protection interconnects SHD are formed in a layer above the bitlines BL, and each of the bitline protection interconnects SHD at least partially covers one of the bitlines BL in a plan view. A third power supply interconnect GL for supplying a third power supply voltage to circuits other than the display memory are formed in a layer above the bitline protection interconnects SHD, the third power supply voltage being higher than the second power supply voltage VDD.
    • 一种具有显示存储器的集成电路器件,其中在形成有多个字线WL的金属互连层中形成有用于向存储单元MC提供第一电源电压VSS的多个第一电源互连VSSL; 并且其中,在形成有多个位线BL的另一个金属互连层中形成有用于将第二电源电压VDD提供给存储单元的多个第二电源互连VDDL,第二电源电压VDD高于第一电源电压VDD 电源电压VSS。 多个位线保护互连SHD形成在位线BL上方的层中,并且每个位线保护互连SHD在平面图中至少部分地覆盖位线BL之一。 用于将第三电源电压提供给除了显示存储器之外的电路的第三电源互连GL形成在位线保护互连SHD上方的层中,第三电源电压高于第二电源电压VDD。
    • 40. 发明授权
    • Integrated circuit device and electronic instrument
    • 集成电路器件和电子仪器
    • US07495988B2
    • 2009-02-24
    • US11270694
    • 2005-11-10
    • Satoru KodairaNoboru ItomiShuji KawaguchiTakashi KumagaiHisanobu IshiyamaKazuhiro Maekawa
    • Satoru KodairaNoboru ItomiShuji KawaguchiTakashi KumagaiHisanobu IshiyamaKazuhiro Maekawa
    • G11C5/14
    • G09G3/2007G09G2310/027G09G2360/18
    • An integrated circuit device having a display memory, wherein a plurality of first power supply interconnects VSSL for supplying a first power supply voltage VSS to memory cells MC are formed in a metal interconnect layer in which a plurality of wordlines WL are formed; and wherein a plurality of second power supply interconnects VDDL for supplying a second power supply voltage VDD to the memory cells are formed in another metal interconnect layer in which a plurality of bitlines BL are formed, the second power supply voltage VDD being higher than the first power supply voltage VSS. A plurality of bitline protection interconnects SHD are formed in a layer above the bitlines BL, and each of the bitline protection interconnects SHD at least partially covers one of the bitlines BL in a plan view. A third power supply interconnect GL for supplying a third power supply voltage to circuits other than the display memory are formed in a layer above the bitline protection interconnects SHD, the third power supply voltage being higher than the second power supply voltage VDD.
    • 一种具有显示存储器的集成电路器件,其中在形成有多个字线WL的金属互连层中形成有用于向存储单元MC提供第一电源电压VSS的多个第一电源互连VSSL; 并且其中,在形成有多个位线BL的另一个金属互连层中形成有用于将第二电源电压VDD提供给存储单元的多个第二电源互连VDDL,第二电源电压VDD高于第一电源电压VDD 电源电压VSS。 多个位线保护互连SHD形成在位线BL上方的层中,并且每个位线保护互连SHD在平面图中至少部分地覆盖位线BL之一。 用于将第三电源电压提供给除了显示存储器之外的电路的第三电源互连GL形成在位线保护互连SHD上方的层中,第三电源电压高于第二电源电压VDD。