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31. 发明授权

US08470145B2 Cathode unit and sputtering apparatus provided with the same 有权
标题翻译：阴极单元和溅射装置
公开(公告)号：US08470145B2
公开(公告)日：2013-06-25
申请号：US12991777
申请日：2009-06-23
申请人： Naoki Morimoto , Tomoyasu Kondo , Daisuke Mori , Kyuzo Nakamura
发明人： Naoki Morimoto , Tomoyasu Kondo , Daisuke Mori , Kyuzo Nakamura
IPC分类号： C23C14/35
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/3414 , H01J37/3423 , H01J37/3435 , H01J37/3452 , H01L21/2855 , H01L21/76843 , H01L21/76873
摘要： There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.
摘要翻译：提供了廉价的阴极单元，其结构简单，并且能够在基板的整个表面上相对于高纵横比的每个微孔形成具有良好涂层特性的膜。还提供了设置有阴极单元的溅射装置。本发明的阴极单元具有在其一个表面上形成有一个或多个凹部的保持件。在凹部内部，从其底侧安装有底圆筒形目标构件。在每个目标构件内部的空间内，存在用于产生磁场的磁场产生装置。

32. 发明授权

US08460965B2 Manufacturing method for solar cell 有权
标题翻译：太阳能电池制造方法
公开(公告)号：US08460965B2
公开(公告)日：2013-06-11
申请号：US13124529
申请日：2009-10-15
申请人： Hirohisa Takahashi , Satoru Ishibashi , Kyuzo Nakamura
发明人： Hirohisa Takahashi , Satoru Ishibashi , Kyuzo Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L31/02366 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： A manufacturing method for a solar cell including an upper electrode extracting an electrode at an incident light side, the upper electrode including a transparent conductive film, a basic structural element of the transparent conductive film being any one of an indium (In), a zinc (Zn), and tin (Sn), the manufacturing method including: a step A forming a texture on a front surface of a transparent substrate using a wet etching method, the transparent conductive film being formed on the transparent substrate, wherein in the step A, when the texture is formed, a metal thin film is formed on the transparent substrate, and an anisotropic etching is performed with the metal thin film being a mask.
摘要翻译：一种太阳能电池的制造方法，其特征在于，包括在入射光侧提取电极的上部电极，所述上部电极包括透明导电膜，所述透明导电膜的基本结构元素为铟（In），锌（Zn）和锡（Sn），所述制造方法包括：步骤A，其使用湿式蚀刻方法在透明基板的正面上形成纹理，所述透明导电膜形成在所述透明基板上，其中，在所述工序如图A所示，当形成纹理时，在透明基板上形成金属薄膜，以金属薄膜为掩模进行各向异性蚀刻。

33. 发明授权

US08128759B2 Permanent magnet and method of manufacturing same 有权
标题翻译：永磁体及其制造方法
公开(公告)号：US08128759B2
公开(公告)日：2012-03-06
申请号：US12519871
申请日：2007-12-19
申请人： Hiroshi Nagata , Kyuzo Nakamura , Takeo Katou , Atsushi Nakatsuka , Ichirou Mukae , Masami Itou , Ryou Yoshiizumi , Yoshinori Shingaki
发明人： Hiroshi Nagata , Kyuzo Nakamura , Takeo Katou , Atsushi Nakatsuka , Ichirou Mukae , Masami Itou , Ryou Yoshiizumi , Yoshinori Shingaki
IPC分类号： H01F1/057
CPC分类号： H01F1/0577 , H01F41/0293
摘要： By causing at least one of Dy and Tb to be adhered to the surface of an iron-boron-rare earth based sintered magnet of a predetermined shape, and is then to be diffused into grain boundary phase, a permanent magnet can be manufactured at high workability and low cost. An iron-boron-rare earth based sintered magnet is disposed in a processing chamber and is heated to a predetermined temperature. Also, an evaporating material made up of a fluoride containing at least one of Dy and Tb disposed in the same or another processing chamber is evaporated, and the evaporated evaporating material is caused to be adhered to the surface of the sintered magnet. The Dy and/or Tb metal atoms of the adhered evaporating material are diffused into the grain particle phase of the sintered magnet before a thin film made of the evaporated material is formed on the surface of the sintered magnet.
摘要翻译：通过使Dy和Tb中的至少一种粘附到具有预定形状的铁 - 硼 - 稀土类烧结磁体的表面上，然后被扩散到晶界相中，可以高度制造永久磁铁可操作性和低成本。将铁 - 硼 - 稀土类烧结磁体设置在处理室中并加热至预定温度。此外，由含有设置在相同或另一处理室中的Dy和Tb中的至少一种的氟化物构成的蒸发材料蒸发，使蒸发的蒸发材料附着在烧结磁体的表面。在烧结磁体的表面上形成由蒸发材料制成的薄膜之前，附着的蒸发材料的Dy和/或Tb金属原子扩散到烧结磁体的颗粒相。

34. 发明授权

US08105468B2 Method for forming tantalum nitride film 有权
标题翻译：形成氮化钽膜的方法
公开(公告)号：US08105468B2
公开(公告)日：2012-01-31
申请号：US11885341
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
IPC分类号： C23C14/00 , C23C14/34
CPC分类号： H01L21/76859 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH3 gas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R′) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译：氮化钽膜形成方法包括以下步骤：将真空气体引入真空室中，所述原料气体由具有由以下通式表示的配位配体的元素Ta组成的配位化合物组成：N =（R，R'）（在式R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基），从而将气体吸附在基板上; 然后引入NH 3气体，然后将来自反应气体的H自由基活化到真空室中，从而通过裂解除去与反应产物中存在的氮原子键合的R（R'）基团，从而形成氮化钽膜富含钽原子。所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。

35. 发明申请

US20110240600A1 VACUUM PROCESSING METHOD AND VACUUM PROCESSING APPARATUS 有权
标题翻译：真空加工方法和真空加工设备
公开(公告)号：US20110240600A1
公开(公告)日：2011-10-06
申请号：US13133514
申请日：2010-03-24
申请人： Yoshiyasu Tajima , Seiichi Takahashi , Kyuzo Nakamura
发明人： Yoshiyasu Tajima , Seiichi Takahashi , Kyuzo Nakamura
IPC分类号： C03C25/68 , H01L21/306
CPC分类号： H01L21/31116 , H01L21/02046 , H01L21/02063 , H01L21/67069
摘要： A processing gas is introduced to remove an oxide film on the surface of a silicon substrate 5. F radicals are allowed to act on the surface of the silicon substrate to etch a silicon layer. Then, NH3 gas, N2 gas and NF3 gas are introduced, allowing NHxFy to act on the oxidized surface of the silicon substrate 5, thereby forming (NH4)2SiF6. The resulting (NH4)2SiF6 is sublimated to remove by-products (SiOF, SiOH) on the surface of the silicon substrate 5.
摘要翻译：引入处理气体以除去硅衬底5的表面上的氧化物膜.F自由基被允许作用在硅衬底的表面上以蚀刻硅层。然后，引入NH 3气体，N 2气体和NF 3气体，使NH x F y作用于硅衬底5的氧化表面，由此形成（NH 4）2 SiF 6。将所得的（NH 4）2 SiF 6升华以除去硅衬底5的表面上的副产物（SiOF，SiOH）。

36. 发明申请

US20110155232A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM 审中-公开
标题翻译：光电转换装置制造方法，光电转换装置和光电转换装置制造系统
公开(公告)号：US20110155232A1
公开(公告)日：2011-06-30
申请号：US13061020
申请日：2009-08-28
申请人： Hirota Uchida , Tetsushi Fujinaga , Yoshinobu Ue , Kazuya Saito , Kyuzo Nakamura
发明人： Hirota Uchida , Tetsushi Fujinaga , Yoshinobu Ue , Kazuya Saito , Kyuzo Nakamura
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/077 , C23C16/24 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit composed of a crystalline-silicon-based thin film, in a reduced-pressure atmosphere; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer which was exposed to an air atmosphere.
摘要翻译：一种光电转换装置的制造方法，包括：连续地形成构成第一光电转换单元的第一p型半导体层，第一i型半导体层和第一n型半导体层，型半导体层，其在减压气氛中构成由结晶硅系薄膜构成的第二光电转换单元; 将第二p型半导体层暴露于空气气氛中; 以及在暴露于空气气氛的第二p型半导体层上形成构成第二光电转换单元的第二i型半导体层和第二n型半导体层。

37. 发明申请

US20110056829A1 CATHODE UNIT AND SPUTTERING APPARATUS PROVIDED WITH THE SAME 有权
标题翻译： CATHODE单元和提供的设备
公开(公告)号：US20110056829A1
公开(公告)日：2011-03-10
申请号：US12991777
申请日：2009-06-23
申请人： Naoki Morimoto , Tomoyasu Kondo , Daisuke Mori , Kyuzo Nakamura
发明人： Naoki Morimoto , Tomoyasu Kondo , Daisuke Mori , Kyuzo Nakamura
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/3414 , H01J37/3423 , H01J37/3435 , H01J37/3452 , H01L21/2855 , H01L21/76843 , H01L21/76873
摘要： There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.
摘要翻译：提供了廉价的阴极单元，其结构简单，并且能够在基板的整个表面上相对于高纵横比的每个微孔形成具有良好涂层特性的膜。还提供了设置有阴极单元的溅射装置。本发明的阴极单元具有在其一个表面上形成有一个或多个凹部的保持件。在凹部内部，从其底侧安装有底圆筒形目标构件。在每个目标构件内部的空间内，存在用于产生磁场的磁场产生装置。

38. 发明申请

US20100012035A1 VACUUM VAPOR PROCESSING APPARATUS 有权
标题翻译：真空蒸汽加工设备
公开(公告)号：US20100012035A1
公开(公告)日：2010-01-21
申请号：US12440635
申请日：2007-09-10
申请人： Hiroshi Nagata , Kyuzo Nakamura , Takeo Katou , Atsushi Nakatsuka , Ichirou Mukae , Masami Itou , Ryou Yoshiizumi , Yoshinori Shingaki
发明人： Hiroshi Nagata , Kyuzo Nakamura , Takeo Katou , Atsushi Nakatsuka , Ichirou Mukae , Masami Itou , Ryou Yoshiizumi , Yoshinori Shingaki
IPC分类号： C23C14/14 , C23C14/24
CPC分类号： C23C14/24 , H01F41/0293
摘要： There is provided a vacuum evaporating apparatus which is suitable for performing a process in which a metal vapor atmosphere is formed in a processing chamber, the metal atoms in this metal vapor atmosphere are caused to be adhered to the surface of an object to be processed, and the metal atoms adhered to the surface of the object to be processed are diffused into grain boundary phases thereof. The apparatus comprises: a processing furnace (11); at least one processing box (4) disposed inside the processing furnace; and a heating means (2) provided inside the processing furnace so as to enclose the processing box. An evacuating means is provided which, after housing the processing box inside the processing furnace in a state in which the object to be processed (S) and the metal evaporating material (V) are disposed in the processing box, reduces the processing furnace and the processing box to a predetermined pressure and keep them at that pressure. The heating means is operated in the reduced pressure to evaporate the metal evaporating material while increasing the object to be processed to a predetermined temperature. The evaporated metal atoms are supplied to the surface of the object to be processed.
摘要翻译：提供了一种真空蒸发装置，其适于进行在处理室中形成金属蒸汽气氛的过程，使金属蒸气气氛中的金属原子粘附到待处理物体的表面，并且附着在待处理物体表面的金属原子扩散到其晶界相。该装置包括：加工炉（11）; 设置在处理炉内的至少一个处理箱（4）以及设置在处理炉内部以包围处理盒的加热装置（2）。本发明提供一种排气装置，其特征在于，处理炉内处理箱内处理箱体（S）和金属蒸发材料（V）的状态被设置在处理箱内时，将加工炉和处理箱到预定的压力并保持在该压力下。加热装置在减压下操作以蒸发金属蒸发材料，同时将待处理物体增加到预定温度。蒸发的金属原子被供应到待处理物体的表面。

39. 发明授权

US5554418A Method of forming passivation film 失效
标题翻译：钝化膜形成方法
公开(公告)号：US5554418A
公开(公告)日：1996-09-10
申请号：US310760
申请日：1994-09-27
申请人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
发明人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
IPC分类号： C08J7/06 , C01B33/12 , C23C16/40 , G11B5/72 , G11B5/73 , G11B5/738 , G11B5/84 , G11B7/26 , B05D3/06 , C23C16/00
CPC分类号： C23C16/402
摘要： A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.
摘要翻译：通过等离子体CVD工艺形成钝化膜，其中使用有机氧化硅作为原料气体。当在基板的表面上形成作为钝化膜的SiO 2膜时，使用Ar，He或NH 3气体作为用作分解原料气体的辅助剂的反应性气体。因此防止了氧或氢自由基的底物灰化。可以将CF4或NF3的氟族气体加入反应气体中。可以首先形成如上所述的钝化膜的SiO 2膜作为初始钝化膜，然后通过使用具有灰化效应的反应气体，例如O 2，N 2 O，O 3，可以在初始钝化膜的顶部形成另一钝化膜和H2。

40. 发明授权

US5069983A Magnetic recording member 失效
标题翻译：磁记录部件
公开(公告)号：US5069983A
公开(公告)日：1991-12-03
申请号：US414235
申请日：1989-09-29
申请人： Kyuzo Nakamura , Yoshifumi Ota , Michio Ishikawa , Noriaki Tani , Masanori Hashimoto , Yuzo Murata
发明人： Kyuzo Nakamura , Yoshifumi Ota , Michio Ishikawa , Noriaki Tani , Masanori Hashimoto , Yuzo Murata
IPC分类号： G11B5/73 , G11B5/738
CPC分类号： G11B5/7325 , G11B5/738 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/12847 , Y10T428/12854
摘要： A magnetic recording member having high coercive force, comprising:(a) a non-magnetic substrate;(b) a Cr base film formed on said substrate by a film forming process; and(c) a Co alloy film formed on said Cr base film by the same film forming process as in (b),wherein said Cr base film contains in addition to Cr at least one additional element selected from the group consisting of rare earth elements, Si, Cu, P and Ge, and wherein said Co alloy film is formed by continuous operation of said film forming process without interruption after completion of the formation of said Cr base film.
摘要翻译：具有高矫顽力的磁记录元件，包括：（a）非磁性基片; （b）通过成膜工艺在所述基板上形成的Cr基膜; 和（c）通过与（b）中相同的成膜方法在所述Cr基膜上形成的Co合金膜，其中所述Cr基膜除Cr之外还含有至少一种选自稀土元素 Si，Cu，P和Ge，并且其中所述Co合金膜是在所述Cr基膜的形成完成之后，通过所述成膜工艺的连续操作而不间断地形成的。

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