会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 32. 发明授权
    • Method of producing diamond film for lithography
    • 制作光刻用金刚石薄膜的方法
    • US06509124B1
    • 2003-01-21
    • US09705709
    • 2000-11-06
    • Hitoshi NoguchiYoshihiro KubotaIkuo Okada
    • Hitoshi NoguchiYoshihiro KubotaIkuo Okada
    • G03F900
    • C23C16/274C23C16/01C23C16/0254C23C16/277G03F1/20
    • There is disclosed a method for producing a diamond film for lithography wherein a diamond film is formed on a silicon substrate on which an insulating film is formed or on an insulating substrate using a mixed gas of methane gas, hydrogen gas and oxygen gas as a raw material gas, and then the substrate is removed by etching treatment, and a method of producing a mask membrane for lithography wherein diamond particles fluidized with gas are brought into contact with a surface of a silicon substrate on which an insulating film is formed or an insulating substrate, a diamond film is grown on the substrate, and then the substrate is removed by etching treatment. There can be provided a method of producing a diamond film for lithography wherein a diamond film having high crystallinity and desired membrane stress can be formed on a substrate, and the film can be easily produced without degrading smoothness, membrane stress or the like after film formation.
    • 公开了一种用于制备用于光刻的金刚石膜的方法,其中金刚石膜形成在其上形成绝缘膜的硅基板上或绝缘基板上,使用甲烷气体,氢气和氧气的混合气体作为原料 然后通过蚀刻处理去除衬底,以及制造用于光刻的掩模膜的方法,其中用气体流化的金刚石颗粒与其上形成绝缘膜的硅衬底的表面接触或绝缘膜 在基板上生长金刚石膜,然后通过蚀刻处理去除衬底。 可以提供一种制备用于光刻的金刚石膜的方法,其中可以在基底上形成具有高结晶度和所需膜应力的金刚石膜,并且可以容易地制备膜,而不会在成膜后降低平滑度,膜应力等 。
    • 40. 发明授权
    • X-ray source and X-ray lithography method
    • X射线源和X射线光刻法
    • US4635282A
    • 1987-01-06
    • US699402
    • 1985-02-07
    • Ikuo OkadaYasunao SaitohHideo YoshiharaSatoshi Nakayama
    • Ikuo OkadaYasunao SaitohHideo YoshiharaSatoshi Nakayama
    • H01J35/22G03F7/20H01L21/027H05G2/00G21K5/00
    • H05G2/003B82Y10/00G03F7/70033G03F7/70808
    • A gas injection type plasma X-ray source has a gas plenum for storing a discharging gas at a pressure in the range of 150 Torr and 1000 Torr, the stored gas being injected between a pair of electrodes through a gas valve. The electrodes are opposed to each other in a vacuum vessel, so that a gas jet for the production of a plasma is formed. A voltage is applied between the electrodes, so that a discharge plasma is produced between said electrodes. A linear plasma with a high temperature and a high density is produced by the pinch of the plasma due to its own magnetic field produced by the current flowing through the plasma, so that X-rays are emitted from the linear plasma. The X-ray source has a high conversion efficiency and a high discharge timing margin, and accordingly the stability and reproducibility of discharges are improved and the X-ray output is increased.
    • 气体注入型等离子体X射线源具有用于储存在150乇和1000乇范围内的压力下的放电气体的气体增压室,所述储存气体通过气阀注入一对电极之间。 电极在真空容器中彼此相对,从而形成用于产生等离子体的气体射流。 在电极之间施加电压,使得在所述电极之间产生放电等离子体。 由于其自身通过流过等离子体的电流产生的磁场,由于等离子体的夹紧而产生具有高温和高密度的线性等离子体,从而从线性等离子体发射X射线。 X射线源具有高转换效率和高放电时间裕度,因此放电的稳定性和再现性得到改善,并且X射线输出增加。