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    • 31. 发明授权
    • Flat panel display
    • 平板显示器
    • US07283110B2
    • 2007-10-16
    • US11304893
    • 2005-12-16
    • Sang-Il ParkJae Bon Koo
    • Sang-Il ParkJae Bon Koo
    • G09G5/00
    • H01L27/1222H01L27/1214H01L27/1251H01L27/3244H01L29/78618H01L29/78645H01L29/78696
    • The present invention discloses an organic light emitting diode capable of obtaining proper luminance and long life cycle by controlling an amount of current flowing through an organic electroluminescent device per unit pixel. The organic light emitting diode includes a luminescent device and first and second transistors for driving the luminescent device, wherein the first and second transistors have different resistance values. The first transistor is a driving transistor for driving the luminescent device. The second transistor is a switching transistor for switching on and off the driving transistor. The driving transistor may have a higher resistance value than the switching transistor.
    • 本发明公开了一种能够通过控制每单位像素流过有机电致发光器件的电流量来获得适当的亮度和长寿命周期的有机发光二极管。 有机发光二极管包括发光装置和用于驱动发光装置的第一和第二晶体管,其中第一和第二晶体管具有不同的电阻值。 第一晶体管是用于驱动发光器件的驱动晶体管。 第二晶体管是用于接通和关断驱动晶体管的开关晶体管。 驱动晶体管可以具有比开关晶体管更高的电阻值。
    • 33. 发明授权
    • Flat panel display
    • 平板显示器
    • US07365495B2
    • 2008-04-29
    • US11304894
    • 2005-12-16
    • Sang-Il ParkJae Bon Koo
    • Sang-Il ParkJae Bon Koo
    • G09G5/00
    • H01L27/1222H01L27/1214H01L27/1251H01L27/3244H01L29/78618H01L29/78645H01L29/78696
    • The present invention discloses an organic light emitting diode capable of obtaining proper luminance and long life cycle by controlling an amount of current flowing through an organic electroluminescent device per unit pixel. The organic light emitting diode includes a luminescent device and first and second transistors for driving the luminescent device, wherein the first and second transistors have different resistance values. The first transistor is a driving transistor for driving the luminescent device. The second transistor is a switching transistor for switching on and off the driving transistor. The driving transistor may have a higher resistance value than the switching transistor.
    • 本发明公开了一种能够通过控制每单位像素流过有机电致发光器件的电流量来获得适当的亮度和长寿命周期的有机发光二极管。 有机发光二极管包括发光装置和用于驱动发光装置的第一和第二晶体管,其中第一和第二晶体管具有不同的电阻值。 第一晶体管是用于驱动发光器件的驱动晶体管。 第二晶体管是用于接通和关断驱动晶体管的开关晶体管。 驱动晶体管可以具有比开关晶体管更高的电阻值。
    • 34. 发明授权
    • Thin film transistor and the manufacturing method thereof
    • 薄膜晶体管及其制造方法
    • US07655951B2
    • 2010-02-02
    • US11433177
    • 2006-05-12
    • Jae Kyeong JeongJae Bon KooHyun Soo ShinYeon Gon Mo
    • Jae Kyeong JeongJae Bon KooHyun Soo ShinYeon Gon Mo
    • H01L29/786
    • H01L29/78603H01L29/66757H01L29/78675
    • A thin film transistor and a method for manufacturing the same capable of reducing a change in a threshold voltage of the thin film transistor formed on a flexible substrate. The thin film transistor includes: a substrate, the substrate being flexible; a buffer layer having a low dielectric constant from about 1.2 to about 4.0 and formed on the substrate; a semiconductor layer formed on the buffer layer; a gate electrode; first insulation layer formed between the gate electrode and the semiconductor layer; a second insulation layer formed on the semiconductor layer and the gate electrode; and a source/drain electrode electrically connected to the semiconductor layer through a contact hole formed in the second insulation layer. Therefore, the thin film transistor can reduce a change in its threshold voltage, thereby reducing changes in brightness, gray scale, contrast, etc., of light-emitting devices using the thin film transistor.
    • 一种薄膜晶体管及其制造方法,能够减小形成在柔性基板上的薄膜晶体管的阈值电压的变化。 所述薄膜晶体管包括:基板,所述基板是柔性的; 缓冲层,其介电常数为约1.2至约4.0,并形成在基底上; 形成在缓冲层上的半导体层; 栅电极; 形成在所述栅电极和所述半导体层之间的第一绝缘层; 形成在所述半导体层和所述栅电极上的第二绝缘层; 以及源极/漏极,其通过形成在第二绝缘层中的接触孔与半导体层电连接。 因此,薄膜晶体管可以减小其阈值电压的变化,从而减少使用薄膜晶体管的发光器件的亮度,灰度,对比度等的变化。
    • 35. 发明授权
    • Flat panel display
    • 平板显示器
    • US07002302B2
    • 2006-02-21
    • US10673152
    • 2003-09-30
    • Sang-Il ParkJae Bon Koo
    • Sang-Il ParkJae Bon Koo
    • G09G5/00
    • H01L27/1222H01L27/1214H01L27/1251H01L27/3244H01L29/78618H01L29/78645H01L29/78696
    • The present invention discloses an organic light emitting diode capable of obtaining proper luminance and long life cycle by controlling an amount of current flowing through an organic electroluminescent device per unit pixel. The organic light emitting diode includes a luminescent device and first and second transistors for driving the luminescent device, wherein the first and second transistors have different resistance values. The first transistor is a driving transistor for driving the luminescent device. The second transistor is a switching transistor for switching on and off the driving transistor. The driving transistor may have a higher resistance value than the switching transistor.
    • 本发明公开了一种能够通过控制每单位像素流过有机电致发光器件的电流量来获得适当的亮度和长寿命周期的有机发光二极管。 有机发光二极管包括发光装置和用于驱动发光装置的第一和第二晶体管,其中第一和第二晶体管具有不同的电阻值。 第一晶体管是用于驱动发光器件的驱动晶体管。 第二晶体管是用于接通和关断驱动晶体管的开关晶体管。 驱动晶体管可以具有比开关晶体管更高的电阻值。
    • 38. 发明授权
    • Inverter
    • 逆变器
    • US07687807B2
    • 2010-03-30
    • US11834044
    • 2007-08-06
    • Jae Bon KooSeong Hyun KimKyung Soo SuhChan Hoe KuSang Chul LimJung Hun Lee
    • Jae Bon KooSeong Hyun KimKyung Soo SuhChan Hoe KuSang Chul LimJung Hun Lee
    • H01L31/00
    • H01L27/281H01L27/283
    • Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulating layer and a second gate electrode material which are on top of the organic semiconductor, and a high degree of integration may also be improved.
    • 提供了当在塑料基板上使用有机半导体制造逆变器电路时,用于控制每个位置的阈值电压的新型逆变器的结构和制造方法。 通常,p型有机半导体是稳定的。 因此,当逆变器仅由p型半导体形成时,由耗尽负载和增强型驱动器构成的D逆变器具有大的增益,宽的摆幅宽度和低功耗,这比组成的E变换器更优选 的增强负载和增强驱动器。 然而,不可能在相同的衬底上形成耗尽晶体管和增强晶体管,同时通过位置来控制它们。 为了克服这样的困难,将使用显示增强型特性的底栅有机半导体晶体管作为驱动晶体管的逆变器的结构和显示耗尽型特性的顶栅有机半导体晶体管用作负载晶体管,并且 提出了其制造方法。 根据该结构,可以通过位于有机半导体顶部的第二绝缘层和第二栅极电极材料另外获得有机半导体的钝化效果,并且还可以提高高集成度。
    • 40. 发明授权
    • Flat panel display and fabrication method thereof
    • 平板显示器及其制造方法
    • US07180236B2
    • 2007-02-20
    • US10694941
    • 2003-10-29
    • Jae Bon KooSang-Il Park
    • Jae Bon KooSang-Il Park
    • H05B33/00
    • H01L21/02422H01L21/02532H01L21/02672H01L27/1229H01L27/1277H01L27/3262H01L29/04
    • A flat panel display with a plurality of pixels. Each pixel has at least a first transistor and a second transistor and a semiconductor layer of the first transistor has a mobility which is different from a semiconductor layer of the second transistor.A method for fabricating a flat panel display including at least a first transistor and a second transistor by forming an amorphous silicon film on an insulating substrate and crystallizing the amorphous silicon film into a polysilicon film that is divided into at least a first region having a first mobility and a second region having a second mobility. The method further involves forming a semiconductor layer for the first transistor from the region with the first mobility and the second transistor from the region with the second mobility by patterning the polysilicon film, where the first mobility is different from the second mobility.
    • 具有多个像素的平板显示器。 每个像素具有至少第一晶体管和第二晶体管,并且第一晶体管的半导体层具有不同于第二晶体管的半导体层的迁移率。 一种用于制造平板显示器的方法,所述平板显示器至少包括第一晶体管和第二晶体管,通过在绝缘基板上形成非晶硅膜并将所述非晶硅膜结晶成多晶硅膜,所述多晶硅膜被划分为至少第一区域,所述第一区域具有第一 移动性和具有第二移动性的第二区域。 该方法还包括通过对第一迁移率不同于第二迁移率的多晶硅膜进行构图而从具有第二迁移率的区域形成具有第一迁移率的区域的第一晶体管的半导体层和第二晶体管。