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31. 发明申请

US20080173980A1 SEMICONDUCTOR DEVICE FABRICATION METHOD AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20080173980A1
公开(公告)日：2008-07-24
申请号：US12013509
申请日：2008-01-14
申请人： Tomohiro Uno , Yoshitaka Nakamura
发明人： Tomohiro Uno , Yoshitaka Nakamura
IPC分类号： H01L29/92 , H01L21/20
CPC分类号： H01L28/82 , H01L27/10852
摘要： A method for fabricating a semiconductor device is disclosed. The semiconductor device includes a capacitor and a support insulator. The capacitor includes a cylindrical electrode. The cylindrical electrode comprises upper and lower sections. The lower section has a roughened inner surface and an outer surface supported by the support insulator. The upper section upwardly projects from the support insulator. An initial cylindrical electrode is formed, wherein the initial cylindrical electrode comprises an initial upper section and an initial lower section which correspond to the upper section and the lower section of the cylindrical electrode, respectively. The initial upper section is supported by the support insulator. Specific impurities are implanted into the initial upper section, wherein the specific impurities serve to prevent the initial upper section from being roughened. Then, the initial cylindrical electrode is exposed to a roughening process so that the initial lower section is roughened to be the lower section.
摘要翻译：公开了一种制造半导体器件的方法。半导体器件包括电容器和支撑绝缘体。电容器包括圆柱形电极。圆柱形电极包括上部和下部。下部具有粗糙的内表面和由支撑绝缘体支撑的外表面。上部从支撑绝缘体向上突出。形成初始圆柱形电极，其中初始圆柱形电极分别包括对应于圆柱形电极的上部和下部的初始上部和初始下部。最初的上部由支撑绝缘子支撑。特定的杂质被注入到初始上部，其中特定的杂质用于防止初始上部被粗糙化。然后，将初始的圆柱形电极暴露于粗糙化处理，使得初始下部被粗糙化为下部。

32. 发明授权

US09427830B2 Copper alloy bonding wire for semiconductor 有权
标题翻译：半导体用铜合金焊条
公开(公告)号：US09427830B2
公开(公告)日：2016-08-30
申请号：US13380123
申请日：2010-06-23
申请人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Daizo Oda
发明人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Daizo Oda
IPC分类号： C22C9/08 , B32B15/20 , B23K35/30 , B21C1/00 , B21C37/04 , B23K35/02 , C22C9/00 , C22F1/08 , H01L23/00
CPC分类号： B23K35/302 , B21C1/003 , B21C37/047 , B23K35/0261 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/4321 , H01L2224/435 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/4851 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85181 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20755 , Y10T428/2958 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01012
摘要： The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.
摘要翻译：本发明是用于半导体元件的铜基接合线。本发明的接合线可以以廉价的材料成本制造，并且在高湿度/温度环境中具有优异的PCT可靠性。此外，本发明的接合线通过热循环试验表现出良好的TCT可靠性; 有利的压合球形; 有利的楔形粘合性; 良好的循环成形性等。具体地，本发明的接合线是通过拉伸含有0.13〜1.15质量％的Pd，余量由铜和不可避免的杂质构成的铜合金而制造的半导体用铜合金接合线。

33. 发明授权

US09112059B2 Bonding wire for semiconductor device 有权
标题翻译：半导体器件用接合线
公开(公告)号：US09112059B2
公开(公告)日：2015-08-18
申请号：US13349155
申请日：2012-01-12
申请人： Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
发明人： Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
IPC分类号： H01L21/00 , H01L23/00
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43847 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/4568 , H01L2224/45684 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48472 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48724 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78251 , H01L2224/78301 , H01L2224/85045 , H01L2224/85048 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15747 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/3025 , H01L2924/3861 , H01L2924/01001 , H01L2924/01203 , H01L2924/01034 , H01L2924/01081 , H01L2924/20645 , H01L2924/20652 , H01L2924/20653 , H01L2924/00014 , H01L2924/20108 , H01L2224/45657 , H01L2224/45666 , H01L2924/01008 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2076 , H01L2924/2065 , H01L2924/20651 , H01L2924/20654 , H01L2924/00 , H01L2224/45124 , H01L2924/013 , H01L2924/20751 , H01L2924/2075 , H01L2924/00013 , H01L2924/01049
摘要： It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.
摘要翻译：本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄用于细间距连接。接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同。外层的厚度为0.021〜0.12μm。

34. 发明申请

US20130306352A2 BONDING WIRE FOR SEMICONDUCTOR 有权
标题翻译：用于半导体的接线
公开(公告)号：US20130306352A2
公开(公告)日：2013-11-21
申请号：US13384819
申请日：2010-07-16
申请人： Shinichi Terashima , Tomohiro Uno , Takashi Yamada , Daizo Oda
发明人： Shinichi Terashima , Tomohiro Uno , Takashi Yamada , Daizo Oda
IPC分类号： H01B5/00
CPC分类号： C22C5/04 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/4851 , H01L2224/48624 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2924/00011 , H01L2924/00015 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01034 , H01L2924/01005 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/0102 , H01L2924/01013 , H01L2924/00014 , H01L2224/45144 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/01001 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01028 , H01L2924/0105 , H01L2924/01007 , H01L2224/45669 , H01L2924/2076 , H01L2924/01018 , H01L2224/48465 , H01L2924/20654 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2924/013 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01004 , H01L2924/01033
摘要： There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.
摘要翻译：提供了一种用于半导体的接合线，即使在与具有优异的耐氧化性且具有铜或铜合金的芯线的钯电镀引线框上接合时也能确保良好的楔粘接性。该接合线包括：铜或铜合金的芯线; 含有钯的涂层，其厚度为10〜200nm; 以及形成在涂层的表面上的合金层，该合金层含有贵金属和钯，厚度为1〜80nm。上述贵金属是银或金属，合金层中这种贵金属的浓度不小于10体积％且不大于75体积％。

35. 发明申请

US20120299182A1 COPPER BONDING WIRE FOR SEMICONDUCTOR AND BONDING STRUCTURE THEREOF 有权
标题翻译：用于半导体的铜接合线及其结合结构
公开(公告)号：US20120299182A1
公开(公告)日：2012-11-29
申请号：US13577199
申请日：2011-02-03
申请人： Tomohiro Uno , Takashi Yamada , Atsuo Ikeda
发明人： Tomohiro Uno , Takashi Yamada , Atsuo Ikeda
IPC分类号： H01L23/49
CPC分类号： H01L24/48 , B23K35/0244 , B23K35/3046 , C22C9/00 , C22F1/08 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/85 , H01L2224/04042 , H01L2224/05624 , H01L2224/43848 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48453 , H01L2224/48463 , H01L2224/48507 , H01L2224/48799 , H01L2224/48824 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/181 , H01L2924/20104 , H01L2924/20105 , H01L2924/01032 , H01L2924/00012 , H01L2924/00 , H01L2924/013 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/01049 , H01L2924/01203 , H01L2924/00013 , H01L2924/01004 , H01L2924/01204
摘要： It is an object of the present invention to provide a bonding structure and a copper bonding wire for semiconductor that are realizable at an inexpensive material cost, superior in a long-term reliability of a bonded portion bonded to an Al electrode, and suitable for use in a vehicle-mounted LSI. A ball-bonded portion is formed by bonding to the aluminum electrode a ball formed on a front end of the copper bonding wire. After being heated at any temperature between 130° C. and 200° C., the aforementioned ball-bonded portion exhibits a relative compound ratio R1 of 40-100%, the relative compound ratio R1 being a ratio of a thickness of a Cu—Al intermetallic compound to thicknesses of intermetallic compounds that are composed of Cu and Al and formed on a cross-sectional surface of the ball-bonded portion.
摘要翻译：本发明的目的是提供一种能够以廉价的材料成本实现的用于半导体的接合结构和铜接合线，并且在与Al电极接合的接合部分的长期可靠性方面优越，并且适合使用在车载LSI中。通过将形成在铜键合线的前端上的球接合到铝电极而形成球形接合部。在130℃至200℃之间的任何温度下加热之后，上述球形接合部分的相对化合物比率为40-100％，相对化合物比例R1为Cu- Al金属间化合物与由Cu和Al组成并形成在球形接合部分的横截面上的金属间化合物的厚度。

36. 发明申请

US20120118610A1 BONDING WIRE FOR SEMICONDUCTOR 有权
标题翻译：用于半导体的接线
公开(公告)号：US20120118610A1
公开(公告)日：2012-05-17
申请号：US13384819
申请日：2010-07-16
申请人： Shinichi Terashima , Tomohiro Uno , Takashi Yamada , Daizo Oda
发明人： Shinichi Terashima , Tomohiro Uno , Takashi Yamada , Daizo Oda
IPC分类号： H01B5/00
CPC分类号： C22C5/04 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/4851 , H01L2224/48624 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2924/00011 , H01L2924/00015 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01034 , H01L2924/01005 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/0102 , H01L2924/01013 , H01L2924/00014 , H01L2224/45144 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/01001 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01028 , H01L2924/0105 , H01L2924/01007 , H01L2224/45669 , H01L2924/2076 , H01L2924/01018 , H01L2224/48465 , H01L2924/20654 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2924/013 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01004 , H01L2924/01033
摘要： There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.
摘要翻译：提供了一种用于半导体的接合线，即使在与具有优异的耐氧化性且具有铜或铜合金的芯线的钯电镀引线框上接合时也能确保良好的楔粘接性。该接合线包括：铜或铜合金的芯线; 含有钯的涂层，其厚度为10〜200nm; 以及形成在涂层的表面上的合金层，该合金层含有贵金属和钯，厚度为1〜80nm。上述贵金属是银或金属，合金层中这种贵金属的浓度不小于10体积％且不大于75体积％。

37. 发明授权

US08102061B2 Semiconductor device bonding wire and wire bonding method 有权
标题翻译：半导体器件接合线和引线接合方法
公开(公告)号：US08102061B2
公开(公告)日：2012-01-24
申请号：US12670253
申请日：2008-07-24
申请人： Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
发明人： Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43847 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/4568 , H01L2224/45684 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48472 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48724 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78251 , H01L2224/78301 , H01L2224/85045 , H01L2224/85048 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15747 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/3025 , H01L2924/3861 , H01L2924/01001 , H01L2924/01203 , H01L2924/01034 , H01L2924/01081 , H01L2924/20645 , H01L2924/20652 , H01L2924/20653 , H01L2924/00014 , H01L2924/20108 , H01L2224/45657 , H01L2224/45666 , H01L2924/01008 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2076 , H01L2924/2065 , H01L2924/20651 , H01L2924/20654 , H01L2924/00 , H01L2224/45124 , H01L2924/013 , H01L2924/20751 , H01L2924/2075 , H01L2924/00013 , H01L2924/01049
摘要： It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.
摘要翻译：本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄用于细间距连接。接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同。外层的厚度为0.021〜0.12μm。

38. 发明授权

US07969021B2 Bonding wire for semiconductor device and method for producing the same 有权
标题翻译：半导体器件用接合线及其制造方法
公开(公告)号：US07969021B2
公开(公告)日：2011-06-28
申请号：US10380749
申请日：2001-09-18
申请人： Tomohiro Uno , Shinichi Terashima , Kohei Tatsumi
发明人： Tomohiro Uno , Shinichi Terashima , Kohei Tatsumi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01B5/00 , H01B5/14 , H01B7/29
CPC分类号： C22C5/02 , B21C37/042 , B23K35/0272 , B23K2101/40 , B32B15/018 , C22C5/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C21/02 , H01L24/43 , H01L2224/05624 , H01L2224/05647 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85948 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01105 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/10253 , H01L2924/20751 , H01L2924/3862 , H01L2924/01046 , H01L2924/0102 , H01L2924/01049 , H01L2924/00015 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01013 , H01L2924/00014 , H01L2924/01057 , H01L2924/01058 , H01L2924/01024 , H01L2924/01039 , H01L2924/01026 , H01L2224/4516 , H01L2224/45155 , H01L2924/00 , H01L2924/013 , H01L2924/01006 , H01L2924/00012 , H01L2924/01033
摘要： A bonding wire for a semiconductor device has a core wire and a periphery comprising a conductive metal mainly composed of an element common to both and/or an alloy or alloys of said metal and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer composed of the elements constituting the core wire and the periphery and a bonding wire for a semiconductor device characterized by having a core wire comprising a first conductive metal or an alloy mainly composed of the first conductive metal, a periphery comprising a second conductive metal different from the first conductive metal of the core wire or an alloy mainly composed of the second conductive metal, and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer and a method of producing the same.
摘要翻译：用于半导体器件的接合线具有芯线和周边，其包括主要由两者共同的元素和/或所述金属的合金或合金构成的导电金属，以及在芯线和周边之间的扩散层或由构成芯线和外围的元件构成的金属间化合物层和用于半导体器件的接合线，其特征在于，具有包含第一导电金属或主要由第一导电金属构成的合金的芯线，外围包括第二导电金属不同于芯线的第一导电金属或主要由第二导电金属构成的合金的导电金属，以及芯线与周边之间的扩散层或金属间化合物层及其制造方法。

39. 发明授权

US07952028B2 Bonding wire for semiconductor device 有权
标题翻译：半导体器件用接合线
公开(公告)号：US07952028B2
公开(公告)日：2011-05-31
申请号：US12747434
申请日：2009-01-20
申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
IPC分类号： H01R4/62
CPC分类号： C22C5/02 , B21C37/047 , B23K35/0261 , B23K35/0272 , B23K35/24 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C9/00 , C22F1/08 , C22F1/14 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45014 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/4848 , H01L2224/4849 , H01L2224/4851 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2225/06562 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/20752 , H01L2924/3025 , H01L2924/01004 , H01L2924/01203 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/01204 , H01L2924/01202 , H01L2224/48465 , H01L2924/20751 , H01L2924/01001 , H01L2924/20655 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20656 , H01L2924/00 , H01L2224/48824 , H01L2924/00014 , H01L2924/013 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/2075 , H01L2924/20754
摘要： A high-performance bonding wire that is suitable for semiconductor mounting technology, such as stacked chip bonding, thinning, and fine pitch mounting, where wire lean (leaning) at an upright position of a ball and spring failure can be suppressed and loop linearity and loop height stability are excellent. This bonding wire for a semiconductor device includes a core material made of a conductive metal, and a skin layer formed on the core material and containing a metal different from the core material as a main component; wherein a relationship between an average size (a) of crystal grains in the skin layer on a wire surface along a wire circumferential direction and an average size (b) of crystal grains in the core material on a normal cross section, the normal cross section being a cross section normal to a wire axis, satisfies an inequality of a/b≦0.7.
摘要翻译：适用于半球安装技术的高性能接合线，例如堆叠芯片接合，变薄和细间距安装，其中可以抑制在球和弹簧故障的直立位置处的钢丝倾斜（倾斜）并且循环线性和回路高度稳定性非常好。这种半导体器件用接合线包括由导电性金属构成的芯材以及形成在芯材上并含有以芯材为主要成分的金属的表层，其中，沿着线周向的线表面上的表层中的晶粒的平均尺寸（a）与正常截面上的芯材中的晶粒的平均尺寸（b）之间的关系，正交截面作为与线轴垂直的横截面，满足a / b＆nlE的不等式; 0.7。

40. 发明申请

US20110120594A1 BONDING WIRE FOR SEMICONDUCTOR 有权
标题翻译：用于半导体的接线
公开(公告)号：US20110120594A1
公开(公告)日：2011-05-26
申请号：US12993401
申请日：2010-02-12
申请人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Ryo Oishi , Daizo Oda
发明人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Ryo Oishi , Daizo Oda
IPC分类号： B23K35/12 , B23K35/24
CPC分类号： C22C5/02 , B32B15/018 , C22C5/04 , C22C5/06 , C22C9/00 , C22C21/02 , C22C21/12 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/45686 , H01L2224/4569 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3025 , Y10T428/12222 , H01L2924/01001 , H01L2924/00014 , H01L2924/20754 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/01202 , H01L2924/01007 , H01L2924/01205 , H01L2224/45639 , H01L2224/45669 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20656 , H01L2924/20652 , H01L2924/20645 , H01L2924/20654 , H01L2924/20655 , H01L2924/00 , H01L2224/48227 , H01L2224/48824 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要： It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.
摘要翻译：本发明的目的是提供一种能够同时实现滚珠接合性能和线加工性的多层线材，并且提高了环路稳定性，拉伸强度和楔形粘合性能。半导体接合线包括主要由等于或大于一种以下元素构成的芯部件：Cu，Au和Ag，以及形成在芯部件上并主要由Pd构成的外层。总线中含有的总氢浓度在0.0001〜0.008质量％的范围内。

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