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31. 发明授权

US06369408B1 GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same 有权
标题翻译：具有低电容和导通电阻的GaAs MOSFET及其制造方法
公开(公告)号：US06369408B1
公开(公告)日：2002-04-09
申请号：US09412847
申请日：1999-10-06
申请人： Ashraf W. Lotfi , Jian Tan
发明人： Ashraf W. Lotfi , Jian Tan
IPC分类号： H01L2978
CPC分类号： H01L29/66522 , H01L29/20 , H01L29/7835
摘要： A metal-oxide semiconductor field effect transistor (MOSFET), a method of manufacturing the MOSFET and a power supply incorporating at least one such MOSFET. In one embodiment, the MOSFET includes: (1) a substrate having an epitaxial layer underlying a gate oxide layer, a portion of the epitaxial layer being a gate region of the MOSFET, (2) an N-type drift region located in the epitaxial layer laterally proximate the gate region and (3) source and drain regions located in the epitaxial layer and laterally straddling the gate and drift regions.
摘要翻译：一种金属氧化物半导体场效应晶体管（MOSFET），一种制造该MOSFET的方法以及至少包括一个这样的MOSFET的电源。在一个实施例中，MOSFET包括：（1）具有在栅氧化层下面的外延层的衬底，外延层的一部分是MOSFET的栅极区，（2）位于外延中的N型漂移区（3）位于外延层中并横向跨越栅极和漂移区域的源极和漏极区域。

32. 发明授权

US5939641A System and method for empirically determining shrinkage stresses in a molded package and power module employing the same 失效
公开(公告)号：US5939641A
公开(公告)日：1999-08-17
申请号：US127707
申请日：1998-07-31
申请人： Ashraf W. Lotfi , John D. Weld
发明人： Ashraf W. Lotfi , John D. Weld
IPC分类号： G01B7/24 , G01B7/16
CPC分类号： G01B7/24
摘要： A system for, and method of, empirically determining stress in a molded package and a power module embodying the system or the method. In one embodiment, the system includes: (1) a sensor, having a magnetic core exhibiting a known complex permeability in a control environment, that is embedded within the molded package and therefore subject to the stress and (2) a measurement circuit, coupled to the sensor, that applies a drive signal to the sensor, measures a response signal received from the sensor and uses the drive signal and the response signal to determine a complex permeability under stress of the core. The magnitude of the stress can then be determined from the core's complex permeability under stress.

33. 发明授权

US08631560B2 Method of forming a magnetic device having a conductive clip 有权
标题翻译：形成具有导电夹子的磁性装置的方法
公开(公告)号：US08631560B2
公开(公告)日：2014-01-21
申请号：US11243537
申请日：2005-10-05
申请人： Ashraf W. Lotfi , Mathew A. Wilkowski , Trifon M. Liakopoulos , John D. Weld
发明人： Ashraf W. Lotfi , Mathew A. Wilkowski , Trifon M. Liakopoulos , John D. Weld
IPC分类号： H01F17/04 , H01F27/30
CPC分类号： H01F17/04 , H01F2027/2814 , H01L23/495 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/37147 , H01L2224/40245 , H01L2224/45144 , H01L2224/48247 , H01L2224/49096 , H01L2224/49171 , H01L2224/49175 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , H02M3/00 , Y10T29/4902 , Y10T29/49073 , Y10T29/49121 , H01L2924/00 , H01L2224/45147 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： A method of forming a magnetic device by providing a conductive substrate and placing a magnetic core proximate the conductive substrate with a surface thereof facing the conductive substrate. The method also includes placing a conductive clip proximate a surface of the magnetic core and electrically coupling ends of the conductive clip to the conductive substrate to cooperatively form a winding therewith about the magnetic core.
摘要翻译：一种形成磁性器件的方法，该方法是通过提供导电衬底并将磁芯放置在导电衬底附近，其表面面向导电衬底。该方法还包括将导电夹子放置在靠近磁芯的表面并将导电夹子的端部电耦合到导电衬底上以协同地形成围绕磁芯的绕组。

34. 发明申请

US20120306011A1 Integrated Circuit With A Laterally Diffused Metal Oxide Semiconductor Device And Method Of Forming The Same 有权
标题翻译：具有侧向扩散金属氧化物半导体器件的集成电路及其形成方法
公开(公告)号：US20120306011A1
公开(公告)日：2012-12-06
申请号：US13586722
申请日：2012-08-15
申请人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
发明人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L21/28518 , H01L21/761 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L27/0922 , H01L29/665 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.
摘要翻译：具有晶体管的集成电路有利地体现在横向扩散的金属氧化物半导体器件中，其具有位于凹入半导体衬底的沟道区域上方的栅极及其形成方法。在一个实施例中，晶体管包括源极/漏极，源极/漏极包括与沟道区相邻的轻掺杂或重掺杂区，以及在沟道区下方延伸的相对掺杂阱以及源极/漏极的轻掺杂或重掺杂区的一部分。晶体管还包括在沟道区域下面的相对掺杂的阱内的沟道延伸，并且在源极/漏极的轻掺杂或重掺杂区域的一部分之下延伸。

35. 发明授权

US08253195B2 Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same 有权
公开(公告)号：US08253195B2
公开(公告)日：2012-08-28
申请号：US12550002
申请日：2009-08-28
申请人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
发明人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
IPC分类号： H01L21/00
CPC分类号： H01L27/0922 , H01L21/28518 , H01L21/761 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/665 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.

36. 发明授权

US08212317B2 Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same 有权
标题翻译：具有横向扩散的金属氧化物半导体器件的集成电路及其形成方法
公开(公告)号：US08212317B2
公开(公告)日：2012-07-03
申请号：US12549944
申请日：2009-08-28
申请人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
发明人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
IPC分类号： H01L21/00
CPC分类号： H01L21/823814 , H01L21/28518 , H01L21/761 , H01L21/823878 , H01L21/823892 , H01L27/0922 , H01L29/665 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.
摘要翻译：具有晶体管的集成电路有利地体现在横向扩散的金属氧化物半导体器件中，其具有位于凹入半导体衬底的沟道区域上方的栅极及其形成方法。在一个实施例中，晶体管包括源极/漏极，源极/漏极包括与沟道区相邻的轻掺杂或重掺杂区，以及在沟道区下方延伸的相对掺杂阱以及源极/漏极的轻或重掺杂区的一部分。晶体管还包括在沟道区域下面的相对掺杂的阱内的沟道延伸，并且在源极/漏极的轻掺杂或重掺杂区域的一部分之下延伸。

37. 发明授权

US08153473B2 Module having a stacked passive element and method of forming the same 有权
标题翻译：具有堆叠无源元件的模块及其形成方法
公开(公告)号：US08153473B2
公开(公告)日：2012-04-10
申请号：US12244672
申请日：2008-10-02
申请人： Ashraf W. Lotfi , Douglas Dean Lopata , John David Weld , Mathew A. Wilkowski
发明人： Ashraf W. Lotfi , Douglas Dean Lopata , John David Weld , Mathew A. Wilkowski
IPC分类号： H01L21/00
CPC分类号： H01L23/645 , H01L23/3107 , H01L23/49541 , H01L23/49589 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/05554 , H01L2224/45144 , H01L2224/48247 , H01L2224/48465 , H01L2224/49113 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19103 , H01L2924/00 , H01L2224/45147 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： A module having a discrete passive element and a semiconductor device, and method of forming the same. In one embodiment, the module includes a patterned leadframe, a discrete passive element mounted on an upper surface of the leadframe, and a thermally conductive, electrically insulating material formed on an upper surface of the discrete passive element. The module also includes a semiconductor device bonded to an upper surface of the thermally conductive, electrically insulating material.
摘要翻译：具有分立无源元件和半导体器件的模块及其形成方法。在一个实施例中，模块包括图案化引线框架，安装在引线框架的上表面上的分立无源元件以及形成在分立无源元件的上表面上的导热电绝缘材料。该模块还包括结合到导热电绝缘材料的上表面的半导体器件。

38. 发明授权

US08133529B2 Method of forming a micromagnetic device 有权
标题翻译：形成微磁装置的方法
公开(公告)号：US08133529B2
公开(公告)日：2012-03-13
申请号：US11852698
申请日：2007-09-10
申请人： Ashraf W. Lotfi , Trifon M. Liakopoulos , Robert W. Filas
发明人： Ashraf W. Lotfi , Trifon M. Liakopoulos , Robert W. Filas
IPC分类号： B05D5/00
CPC分类号： H01F10/132 , H01F1/15333 , H01F10/265 , H01F17/0033 , H01F41/046 , H01L28/10
摘要： A method of forming a micromagnetic device including providing a substrate and forming a magnetic core layer over the substrate from a magnetic alloy. The magnetic alloy includes iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy.
摘要翻译：一种形成微磁性器件的方法，包括提供衬底并从磁性合金在衬底上形成磁芯层。磁性合金包括铁，钴和磷。钴的含量在1.8〜4.5原子％的范围内。磷的含量为20.1〜30原子％。铁的含量基本上是磁性合金的剩余比例。

39. 发明申请

US20110316501A1 Controller for a Power Converter and Method of Operating the Same 有权
标题翻译：电源转换器控制器及其操作方法
公开(公告)号：US20110316501A1
公开(公告)日：2011-12-29
申请号：US13224620
申请日：2011-09-02
申请人： Pedro Alou Cervera , Jose Antonio Cobos Marquez , Ashraf W. Lotfi , Andres Soto del Pecho
发明人： Pedro Alou Cervera , Jose Antonio Cobos Marquez , Ashraf W. Lotfi , Andres Soto del Pecho
IPC分类号： G05F1/00
CPC分类号： H02M3/158 , H02M3/157 , H02M2001/0012
摘要： A controller for use with a power converter including a switch configured to conduct to provide a regulated output characteristic at an output of the power converter, and method of operating the same. In one embodiment, the controller includes a linear control circuit, coupled to the output, configured to provide a first control signal for the switch as a function of the output characteristic. The controller also includes a nonlinear control circuit, coupled to the output, configured to provide a second control signal for the switch as a function of the output characteristic. The controller is configured to select one of the first and second control signals for the switch in response to a change in an operating condition of the power converter.
摘要翻译：一种与功率转换器一起使用的控制器，包括被配置为在功率转换器的输出端提供稳定输出特性的开关，以及其操作方法。在一个实施例中，控制器包括耦合到输出的线性控制电路，其被配置为根据输出特性为开关提供第一控制信号。控制器还包括耦合到输出的非线性控制电路，其被配置为根据输出特性为开关提供第二控制信号。控制器被配置为响应于功率转换器的操作状态的变化来选择用于开关的第一和第二控制信号中的一个。

40. 发明授权

US08018315B2 Power converter employing a micromagnetic device 有权
标题翻译：功率转换器采用微电磁装置
公开(公告)号：US08018315B2
公开(公告)日：2011-09-13
申请号：US11852703
申请日：2007-09-10
申请人： Ashraf W. Lotfi , Trifon M. Liakopoulos , Robert W. Filas
发明人： Ashraf W. Lotfi , Trifon M. Liakopoulos , Robert W. Filas
IPC分类号： H01F27/24 , H01F5/00 , H01F27/28 , H01F17/06 , G05F1/00
CPC分类号： H01F41/046 , H01F10/132 , H01F10/138 , H01F10/265 , H01L2224/11
摘要： A power converter including a power train, a controller and a driver. The power train includes a switch that conducts for a duty cycle and provides a regulated output characteristic for the power converter, and a micromagnetic device interposed between the switch and the output of the power converter. The micromagnetic device includes a substrate, and a magnetic core layer formed over the substrate from a magnetic alloy including iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy. The controller provides a signal to control the duty cycle of the switch. The driver provides a drive signal to the switch as a function of the signal from the controller.
摘要翻译：一种功率转换器，包括传动系，控制器和驱动器。动力传动系包括开关，用于进行占空比并为功率转换器提供稳定的输出特性，以及插入在开关和功率转换器的输出端之间的微电磁装置。该微型磁性器件包括基底和由包括铁，钴和磷的磁性合金在基底上形成的磁芯层。钴的含量在1.8〜4.5原子％的范围内。磷的含量为20.1〜30原子％。铁的含量基本上是磁性合金的剩余比例。控制器提供一个信号来控制开关的占空比。驱动器根据来自控制器的信号向开关提供驱动信号。

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