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31. 发明授权

US4670763A Thin film field effect transistor 失效
标题翻译：薄膜场效应晶体管
公开(公告)号：US4670763A
公开(公告)日：1987-06-02
申请号：US609640
申请日：1984-05-14
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens
IPC分类号： H01L21/324 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/161 , H01L29/40 , H01L29/78 , H01L29/786 , H01L29/861 , H01L45/00
CPC分类号： H01L29/7839 , H01L21/324 , H01L27/1214 , H01L29/04 , H01L29/161 , H01L29/66742 , H01L29/78618 , H01L29/7866
摘要： There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.
摘要翻译：公开了一种可以以快速切换速率操作的电影场效应晶体管，例如用于视频显示应用中。晶体管包括具有比无定形材料更有序的结构的硅半导体材料体，并且比单晶材料有序。晶体管的源极和漏极包括形成在硅半导体材料体上的整流触点。还公开了制造晶体管和利用该晶体管的电子可寻址阵列系统的方法。

32. 发明授权

US4517223A Method of making amorphous semiconductor alloys and devices using microwave energy 失效
标题翻译：制造使用微波能量的非晶半导体合金和器件的方法
公开(公告)号：US4517223A
公开(公告)日：1985-05-14
申请号：US423424
申请日：1982-09-24
申请人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
IPC分类号： C23C16/30 , C23C16/50 , C23C16/511 , H01J37/32 , H01L21/205 , H01L31/04 , C23C11/02
CPC分类号： H01J37/3222 , C23C16/511 , H01J37/32192 , H01J37/32275 , H01L21/02381 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for making amorphous semiconductor alloy films and devices at high deposition rates utilizes microwave energy to form a deposition plasma. The alloys exhibit high quality electronic properties suitable for many applications including photovoltaic applications.The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, and introducing into the vessel reaction gases including at least one semiconductor containing compound. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reactions gases can include silane (SiH.sub.4), silicon tetrafluoride (SiF.sub.4), silane and silicon tetrafluoride, silane and germane (GeH.sub.4), and silicon tetrafluoride and germane. The reaction gases can also include germane or germanium tetrafluoride (GeF.sub.4). To all of the foregoing, hydrogen (H.sub.2) can also be added. Dopants, either p-type or n-type can also be added to the reaction gases to form p-type or n-type alloy films, respectively. Also, band gap increasing elements such as carbon or nitrogen can be added in the form of, for example, methane or ammonia gas to widen the band gap of the alloys.
摘要翻译：制造非晶半导体合金膜和高沉积速率的器件的方法利用微波能量来形成沉积等离子体。该合金表现出高质量的电子性能，适用于许多应用，包括光伏应用。该方法包括以下步骤：提供微波能量源，将微波能量耦合到基本上封闭的反应容器中，所述反应容器含有要沉积非晶半导体膜的衬底，并将包含至少一个含有复合。微波能量和反应气体在容器内形成辉光放电等离子体，以将非晶半导体膜从反应气体沉积到衬底上。反应气体可以包括硅烷（SiH 4），四氟化硅（SiF 4），硅烷和四氟化硅，硅烷和锗烷（GeH 4）以及四氟化硅和锗烷。反应气体还可以包括锗烷或四氟化锗（GeF 4）。对于所有这些，也可以加入氢（H 2）。也可以将p型或n型掺杂剂添加到反应气体中以分别形成p型或n型合金膜。此外，带隙增加元素如碳或氮可以以例如甲烷或氨气的形式加入，以加宽合金的带隙。

33. 发明授权

US08658510B2 Processing phase change material to improve programming speed 有权
标题翻译：处理相变材料，提高编程速度
公开(公告)号：US08658510B2
公开(公告)日：2014-02-25
申请号：US13585936
申请日：2012-08-15
申请人： Stephen J. Hudgens , Tyler Lowrey
发明人： Stephen J. Hudgens , Tyler Lowrey
IPC分类号： H01L21/20
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titanium to reduce crystallization time.
摘要翻译：可以处理相变材料以降低其微晶粒度，并且还可以加工以增加材料的结晶或设定编程速度。例如，掺杂氮以减小晶粒尺寸的材料可以掺杂钛以减少结晶时间。

34. 发明授权

US08269206B2 Processing phase change material to improve programming speed 有权
标题翻译：处理相变材料，提高编程速度
公开(公告)号：US08269206B2
公开(公告)日：2012-09-18
申请号：US13004167
申请日：2011-01-11
申请人： Stephen J. Hudgens , Tyler Lowrey
发明人： Stephen J. Hudgens , Tyler Lowrey
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titanium to reduce crystallization time.
摘要翻译：可以处理相变材料以降低其微晶粒度，并且还可以加工以增加材料的结晶或设定编程速度。例如，掺杂氮以减小晶粒尺寸的材料可以掺杂钛以减少结晶时间。

35. 发明授权

US08098519B2 Semiconductor phase change memory using multiple phase change layers 有权
公开(公告)号：US08098519B2
公开(公告)日：2012-01-17
申请号：US12764157
申请日：2010-04-21
申请人： Charles H. Dennison , Stephen J. Hudgens
发明人： Charles H. Dennison , Stephen J. Hudgens
IPC分类号： G11C11/00
CPC分类号： H01L45/065 , G11C13/0004 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , Y10S977/754
摘要： In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. For example, in one embodiment, a diffusion barrier layer may be maintained between the two distinct phase change layers. In another embodiment, a face centered cubic chalcogenide structure may be utilized.

36. 发明授权

US06617192B1 Electrically programmable memory element with multi-regioned contact 有权
标题翻译：具有多区域接触的电可编程存储元件
公开(公告)号：US06617192B1
公开(公告)日：2003-09-09
申请号：US09677957
申请日：2000-10-03
申请人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
发明人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
IPC分类号： H01L2100
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.
摘要翻译：一种电操作的存储元件，其具有与可编程为至少第一电阻状态和第二电阻状态的存储器材料电连通的触点。优选地，触点至少包括具有第一电阻率的第一区域和具有大于第一电阻率的第二电阻率的第二区域，其中较大电阻区域与存储材料相邻。

37. 发明授权

US4715927A Improved method of making a photoconductive member 失效
标题翻译：改进的制造感光体的方法
公开(公告)号：US4715927A
公开(公告)日：1987-12-29
申请号：US941244
申请日：1986-11-21
申请人： Annette G. Johncock , Stephen J. Hudgens
发明人： Annette G. Johncock , Stephen J. Hudgens
IPC分类号： C23C16/511 , H01L31/09 , H01L31/20 , C30B25/02
CPC分类号： H01L31/095 , C23C16/511 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A process for making photoconductive semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The high deposition rates and high gas conversion efficiencies allow photoconductive members to be formed of amorphous semiconductor alloys at commercially viable rates.The process includes coupling microwave energy into a substantially enclosed reaction vessel containing a substrate and depositing amorphous photoconductive alloys onto the substrate from a reaction gas introduced into the vessel. The photoconductive member includes a bottom blocking layer, a photoconductive layer and a top blocking layer. The photoconductive member can be formed in a negative or positive charge type configuration. The members can include a top blocking enhancement layer and/or an improved infrared photoresponsive layer.
摘要翻译：用于制造光导半导体合金和具有高反应气体转化效率和高沉积速率的部件的方法利用微波能量来形成沉积等离子体。高沉积速率和高气体转换效率使得光电导元件以商业上可行的速率由非晶半导体合金形成。该方法包括将微波能量耦合到包含基底的基本封闭的反应容器中，并将非晶态光导电合金从引入容器的反应气体沉积到基底上。感光体包括底部阻挡层，光电导层和顶部阻挡层。感光体可以形成为负电荷型或正电荷型。构件可以包括顶部阻挡增强层和/或改进的红外光响应层。

38. 发明授权

US08223538B2 Semiconductor phast change memory using multiple phase change layers 有权
标题翻译：半导体相变存储器使用多个相变层
公开(公告)号：US08223538B2
公开(公告)日：2012-07-17
申请号：US13315374
申请日：2011-12-09
申请人： Charles H. Dennison , Stephen J. Hudgens
发明人： Charles H. Dennison , Stephen J. Hudgens
IPC分类号： G11C11/00
CPC分类号： H01L45/065 , G11C13/0004 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , Y10S977/754
摘要： In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. For example, in one embodiment, a diffusion barrier layer may be maintained between the two distinct phase change layers. In another embodiment, a face centered cubic chalcogenide structure may be utilized.
摘要翻译：根据一些实施例，可以形成相变存储器，其中减少了编程体积相变材料之外的区域中的热导率。这可能会降低所得相变存储器的功耗。功耗的降低可以通过在编程体积之外形成很少或不混合的相变材料的不同层来实现。例如，在一个实施例中，可以在两个不同的相变层之间保持扩散阻挡层。在另一个实施方案中，可以使用面心立方硫属元素化合物结构。

39. 发明申请

US20110168964A1 Processing Phase Change Material to Improve Programming Speed 有权
标题翻译：处理相变材料以提高编程速度
公开(公告)号：US20110168964A1
公开(公告)日：2011-07-14
申请号：US13004167
申请日：2011-01-11
申请人： Stephen J. Hudgens , Tyler Lowrey
发明人： Stephen J. Hudgens , Tyler Lowrey
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titanium to reduce crystallization time.
摘要翻译：可以处理相变材料以降低其微晶粒度，并且还可以加工以增加材料的结晶或设定编程速度。例如，掺杂氮以减小晶粒尺寸的材料可以掺杂钛以减少结晶时间。

40. 发明申请

US20090091971A1 Semiconductor phase change memory using multiple phase change layers 有权
标题翻译：半导体相变存储器使用多个相变层
公开(公告)号：US20090091971A1
公开(公告)日：2009-04-09
申请号：US11973565
申请日：2007-10-09
申请人： Charles H. Dennison , Stephen J. Hudgens
发明人： Charles H. Dennison , Stephen J. Hudgens
IPC分类号： G11C11/00 , H01L47/00
CPC分类号： H01L45/065 , G11C13/0004 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , Y10S977/754
摘要： In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. For example, in one embodiment, a diffusion barrier layer may be maintained between the two distinct phase change layers. In another embodiment, a face centered cubic chalcogenide structure may be utilized.
摘要翻译：根据一些实施例，可以形成相变存储器，其中减少了编程体积相变材料之外的区域中的热导率。这可能会降低所得相变存储器的功耗。功耗的降低可以通过在编程体积之外形成很少或不混合的相变材料的不同层来实现。例如，在一个实施例中，可以在两个不同的相变层之间保持扩散阻挡层。在另一个实施方案中，可以使用面心立方硫属元素化合物结构。

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