专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US08216703B2 Magnetic tunnel junction device 有权
标题翻译：磁隧道连接装置
公开(公告)号：US08216703B2
公开(公告)日：2012-07-10
申请号：US12035011
申请日：2008-02-21
申请人： Jijun Sun , Jon M. Slaughter
发明人： Jijun Sun , Jon M. Slaughter
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic tunnel junction (MTJ) (10) employing a dielectric tunneling barrier (16), useful in magnetoresistive random access memories (MRAMs) and other devices, has a synthetic antiferromagnet (SAF) structure (14, 16), comprising two ferromagnetic (FM) layers (26, 41; 51, 58; 61, 68) separated by a coupling layer (38, 56, 66). Improved magnetoresistance (MR) ratio is obtained by providing a further layer (44, 46, 46′, 47, 52, 62), e.g. containing Ta, preferably spaced apart from the coupling layer (38, 56, 66) by a FM layer (41, 30-2, 54). The further layer (44, 46, 46′, 47, 52, 62) may be a Ta dusting layer (44) covered by a FM layer (30-2), or a Ta containing FM alloyed layer (46), or a stack (46′) of interleaved FM and N-FM layers, or other combination (47, 62). Furthering these benefits, another FM layer, e.g., CoFe, NiFe, (30, 30-1, 51, 61) is desirably provided between the further layer (44, 46, 46′, 47, 52, 62) and the tunneling barrier (16). Ta, Zr, Hf, Ti, Mg, Nb, V, Zn, Cr, NiFeX, CoFeX and CoFeBX (X═Ta, Zr, Hf, Ti, Mg, Nb, V, Zn, Cr) are useful for the further layer (44, 46, 46′, 47, 52, 62).
摘要翻译：采用磁阻随机存取存储器（MRAM）和其它器件的电介质隧道势垒（16）的磁性隧道结（MTJ）（10）具有合成的反铁磁（SAF）结构（14,16），包括两个铁磁（ FM）层（26,41; 51,58; 61,68），由耦合层（38,56,66）分隔开。通过提供另外的层（44,46,46'，47,52,62），例如，可以获得改善的磁阻（MR）比。含有Ta，优选地通过FM层（41,30-2,54）与耦合层（38,56,66）间隔开。另外的层（44,46,46'，47,52,62）可以是由FM层（30-2）或含Ta的FM合金层（46）覆盖的Ta粉化层（44），或交错FM和N-FM层的叠层（46'），或其他组合（47,62）。进一步提高这些益处，期望地在另一层（44,46,46'，47,52,62）和隧道势垒之间提供另一个FM层，例如CoFe，NiFe（30,30-1,51,61）（16）。 Ta，Zr，Hf，Ti，Mg，Nb，V，Zn，Cr，NiFeX，CoFeX和CoFeBX（X = Ta，Zr，Hf，Ti，Mg，Nb，V，Zn，Cr）（44,46,46'，47,52,62）。

32. 发明授权

US07635654B2 Magnetic tunnel junction device with improved barrier layer 有权
标题翻译：具有改善阻挡层的磁隧道结器件
公开(公告)号：US07635654B2
公开(公告)日：2009-12-22
申请号：US11341986
申请日：2006-01-27
申请人： JiJun Sun , John T. Martin , Jon M. Slaughter
发明人： JiJun Sun , John T. Martin , Jon M. Slaughter
IPC分类号： H01L21/316 , H01L27/115
CPC分类号： H01L43/08 , H01L43/12
摘要： Methods and apparatus are provided for magnetic tunnel junction (MTJ) devices and arrays, comprising metal-insulator-metal (M-I-M) structures with opposed first and second ferro-magnetic electrodes with alterable relative magnetization direction. The insulator is formed by depositing an oxidizable material (e.g., Al) on the first electrode, naturally oxidizing it, e.g., at about 0.03 to 10 milli-Torr for up to a few thousand seconds at temperatures below about 35° C., then further rapidly (e.g., plasma) oxidizing at a rate much larger than that of the initial natural oxidation. The second electrode of the M-I-M structure is formed on this oxide. More uniform tunneling properties result. A second oxidizable material layer is optionally provided after the initial natural oxidation and before the rapid oxidation step during which it is substantially entirely converted to insulating oxide. A second natural oxidation cycle may be optionally provided before the second layer is rapidly oxidized.
摘要翻译：提供了用于磁性隧道结（MTJ）器件和阵列的方法和装置，其包括金属 - 绝缘体 - 金属（M-I-M）结构，具有相对的具有可变相对磁化方向的第一和第二铁磁电极。绝缘体通过在第一电极上沉积可氧化材料（例如，Al）而形成，其自然氧化，例如在低于约35℃的温度下在约0.03至10毫乇达数千秒，然后进一步快速（例如，等离子体）以比初始自然氧化的速率更大的速率氧化。在该氧化物上形成M-I-M结构的第二电极。导致更均匀的隧道性质。任选地，在初始自然氧化之后和快速氧化步骤之间提供第二可氧化材料层，在该氧化步骤期间，其基本上完全转化为绝缘氧化物。可以任选地在第二层被快速氧化之前提供第二自然氧化循环。

33. 发明授权

US06783637B2 High throughput dual ion beam deposition apparatus 失效
公开(公告)号：US06783637B2
公开(公告)日：2004-08-31
申请号：US10285161
申请日：2002-10-31
申请人： Jon M. Slaughter , Gerald Steiner
发明人： Jon M. Slaughter , Gerald Steiner
IPC分类号： C23C1434
CPC分类号： C23C14/46 , C23C14/3407 , C23C14/564
摘要： An ion beam deposition system for sputtering material layers comprising a vacuum chamber, a substrate positioned in the vacuum chamber, a first target holder capable of holding at least one target of a first material, said first target holder being positioned in the vacuum chamber, a second target holder capable of holding at least one target of a second material, said second target holder being positioned in the vacuum chamber, a first ion beam source for directing ions at the at least one target of the first material for depositing said first material onto the substrate, and a second ion beam source for directing ions at the at least one target of the second material for depositing said second material onto the substrate. Said deposition system includes a control system that allows materials to be deposited from the first and second target holder with negligible delay between the depositions.

34. 发明授权

US06549454B1 TMR material having a substantially smooth and continuous ultra-thin magnetic layer 有权
标题翻译： TMR材料具有基本平滑且连续的超薄磁性层
公开(公告)号：US06549454B1
公开(公告)日：2003-04-15
申请号：US09677505
申请日：2000-10-02
申请人： Jon M. Slaughter
发明人： Jon M. Slaughter
IPC分类号： G11C1100
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3231 , H01L27/222 , H01L43/08
摘要： A TMR material (10) is provided having a substantially smooth and continuous ultra-thin magnetic layer. The TMR material is provided with a first tunnel barrier layer (46) is formed on a first magnetic layer (42) and a second magnetic layer (44) formed on the first tunnel barrier layer (46). The second magnetic layer (44) provides the substantially smooth and continuous ultra-thin magnetic layer as the second magnetic layer (44) has the substantially smooth and continuous layer across at least a portion of said first tunnel barrier layer (46) and a thickness not exceeding about 20 Å.
摘要翻译：提供具有基本平滑且连续的超薄磁性层的TMR材料（10）。 TMR材料设置有形成在形成在第一隧道势垒层（46）上的第一磁性层（42）和第二磁性层（44）上的第一隧道势垒层（46）。第二磁性层（44）提供基本上平滑且连续的超薄磁性层，因为第二磁性层（44）具有穿过所述第一隧道势垒层（46）的至少一部分的基本平滑且连续的层，不超过约20Å。

35. 发明授权

US6165803A Magnetic random access memory and fabricating method thereof 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US6165803A
公开(公告)日：2000-12-26
申请号：US312833
申请日：1999-05-17
申请人： Eugene Y. Chen , Jon M. Slaughter
发明人： Eugene Y. Chen , Jon M. Slaughter
IPC分类号： G11C11/14 , G11B5/39 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/22 , H01L43/08 , H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/12
摘要： An improved and novel fabrication method for a magnetic element, and more particularly its use in a magnetoresistive random access memory (MRAM) is provided. An MRAM device has memory elements and circuitry for managing the memory elements. The circuitry includes transistor (12a), digit line (29), etc., which are integrated on a substrate (11). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44) are defined by transforming portions (42b) of a magnetic blanket layer into an insulative material. The magnetic blanket layer, which includes magnetic layers (40,42) and a non-magnetic layer (41) sandwiched by the magnetic layers, which are deposited on conductor layer (34). The insulative, or inactive, portions (42b) define and separate the plurality of memory elements (43, 44).
摘要翻译：提供了一种用于磁性元件的改进和新颖的制造方法，更具体地，其在磁阻随机存取存储器（MRAM）中的应用。 MRAM设备具有用于管理存储器元件的存储器元件和电路。电路包括集成在基板（11）上的晶体管（12a），数字线（29）等。首先在CMOS工艺之下制造电路，然后通过将磁性覆盖层的部分（42b）转换成绝缘材料来限定磁存储元件（43,44）。磁性层包括磁性层（40,42）和被磁性层夹在中间的非磁性层（41），其沉积在导体层（34）上。绝缘或非活动部分（42b）限定和分离多个存储元件（43,44）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式