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31. 发明授权

US07978399B2 Display device and method of fabricating the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07978399B2
公开(公告)日：2011-07-12
申请号：US12694866
申请日：2010-01-27
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： G02B26/00 , G09G3/34
CPC分类号： G02F1/167 , G02B26/026 , G02F1/133305 , G02F1/1368 , G02F2001/1672 , G02F2001/1676 , G02F2001/1678 , G02F2201/123 , G09F9/372 , G09G3/344 , H01L51/0097 , H01L51/0545
摘要： A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gale electrodes. The pixel unit further includes a contrast media foamed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.
摘要翻译：以下示出本发明的显示装置的结构。显示装置包括像素单元，其包括TFT，其中有源层包含有机半导体材料，用于在布置成与风暴电极相接的绝缘层中的开口部分中形成通道部分。像素单元还包括在连接到TFT上的电极上发泡的用于改变施加电场时的反射率的造影剂，或者包含在施加电场时改变反射率的带电粒子的微胶囊。像素单元被塑料基板夹持，并且在塑料基板和像素单元之间设置包括无机绝缘材料的阻挡层。本发明的目的是提供生产率优良，重量轻且柔软的显示装置。

32. 发明授权

US07974524B2 Heat treatment apparatus and heat treatment method 有权
标题翻译：热处理设备及热处理方法
公开(公告)号：US07974524B2
公开(公告)日：2011-07-05
申请号：US11511929
申请日：2006-08-29
申请人： Shunpei Yamazaki , Hisashi Ohtani , Yasuyuki Arai
发明人： Shunpei Yamazaki , Hisashi Ohtani , Yasuyuki Arai
IPC分类号： A45D20/40 , C23C16/00
CPC分类号： H01L21/67109 , C30B33/00
摘要： An object is to provide a method of activating impurity elements added to a semiconductor film, and a method of gettering, in a process of manufacturing a semiconductor device using a substrate having a low resistance to heat, such as glass, without changing the shape of the substrate, by using a short time heat treatment process. Another object is to provide a heat treatment apparatus that makes this type of heat treatment process possible. A unit for supplying a gas from the upstream side of a reaction chamber, a unit for heating the gas in the upstream side of the reaction chamber, a unit for holding a substrate to be processed in the downstream side of the reaction chamber, and a unit for circulating the gas from the downstream side of the reaction chamber to the upstream side are prepared. The amount of electric power used in heating the gas can be economized by circulating the gas used to heat the substrate to be processed. A portion of the circulating gas may be expelled, and can be utilized as a heat source in order to preheat a newly introduced gas.
摘要翻译：本发明的目的是提供一种激活添加到半导体膜中的杂质元素的方法，以及在使用具有低耐热性的基板（例如玻璃）制造半导体器件的过程中，而不改变形状基板，通过使用短时间的热处理工艺。另一个目的是提供一种使这种类型的热处理过程成为可能的热处理设备。用于从反应室的上游侧供给气体的单元，用于加热反应室上游侧的气体的单元，在反应室的下游侧保持被处理基板的单元，准备将气体从反应室的下游侧向上游侧循环的单元。用于加热气体的电力量可以通过循环用于加热被处理基板的气体来节约。循环气体的一部分可以被排出，并且可以用作热源以便预热新引入的气体。

33. 发明授权

US07943287B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07943287B2
公开(公告)日：2011-05-17
申请号：US11881232
申请日：2007-07-26
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Yasuyuki Arai
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Yasuyuki Arai
IPC分类号： G03F7/00
CPC分类号： H01L27/124 , H01L27/1288 , Y10S430/146
摘要： An object is to provide a display device that can be manufactured with increased use efficiency of a material by a simplified manufacturing process and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, the light-absorbing layer and the insulating layer are selectively irradiated with laser light, so that an irradiated region of the light-absorbing layer and an irradiated region of the insulating layer are removed, and accordingly an opening is formed in the light-absorbing layer and the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light-absorbing film. The conductive film is formed in the opening so as to be in contact with the exposed light-absorbing layer, so that the light-absorbing layer and the conductive film are electrically connected to each other with the insulating layer interposed therebetween.
摘要翻译：本发明的目的是提供一种能够通过简化的制造工艺及其制造技术以更高的材料利用效率制造的显示装置。形成光吸收层，在光吸收层上形成绝缘层，用激光选择性地照射光吸收层和绝缘层，使得光吸收层的照射区域和被照射的去除绝缘层的区域，因此在光吸收层和绝缘层中形成开口，并且在开口中形成导电膜以与光吸收膜接触。导电膜形成在开口中以与曝光的光吸收层接触，使得光吸收层和导电膜彼此之间以绝缘层彼此电连接。

34. 发明授权

US07935958B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07935958B2
公开(公告)日：2011-05-03
申请号：US11547632
申请日：2005-10-18
申请人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
发明人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
IPC分类号： H01L29/08
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/00 , G11C17/14 , G11C17/143 , G11C17/16 , H01L27/285 , H01L51/0051 , H01L51/0059
摘要： The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.
摘要翻译：本发明提供一种半导体器件，其具有其中有机化合物层夹在一对导电层之间的简单结构的存储元件和这种半导体器件的制造方法。利用该特征，提供了具有非易失性，可追加记录和容易制造的存储电路的半导体器件和这种半导体器件的制造方法。根据本发明的半导体器件具有设置在绝缘层上的多个场效应晶体管和设置在多个场效应晶体管上的多个存储元件。多个场效应晶体管中的每一个使用单晶半导体层作为沟道部分，并且多个存储元件中的每一个是其中堆叠第一导电层，有机化合物层和第二导电层的元件为了。

35. 发明授权

US07928910B2 Wireless chip and electronic device having wireless chip 有权
标题翻译：无线芯片和具有无线芯片的电子设备
公开(公告)号：US07928910B2
公开(公告)日：2011-04-19
申请号：US11886157
申请日：2006-03-23
申请人： Yukie Suzuki , Yasuyuki Arai , Shunpei Yamazaki
发明人： Yukie Suzuki , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01Q1/38 , H01Q1/48
CPC分类号： H01Q1/243 , H01L2223/6677 , H01L2224/0401 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01Q1/2208 , H01Q9/0407
摘要： It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.
摘要翻译：本发明的目的是提供一种能够提高机械强度的无线芯片，以及具有高耐久性的无线芯片。无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线以及连接芯片和天线的导电层。此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，传感器装置，连接芯片和天线的导电层以及连接芯片和传感器的导电层设备。此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，电池，连接芯片和天线的导电层以及连接芯片和电池的导电层。

36. 发明授权

US07923269B2 Light emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07923269B2
公开(公告)日：2011-04-12
申请号：US11276464
申请日：2006-03-01
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L21/00
CPC分类号： H01L51/5012 , H01L21/67155 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L51/0025 , H01L51/5048 , H01L51/5088 , H01L51/5221 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/56
摘要： The concentration of oxygen, which causes problems such as decreases in brightness and dark spots through degradation of electrode materials, is lowered in an organic light emitting element having a layer made from an organic compound between a cathode and an anode, and in a light emitting device structured using the organic light emitting element. The average concentration of impurities contained in a layer made from an organic compound used in older to form an organic light emitting element having layers such as a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer, is reduced to 5×1019/cm2 or less, preferably equal to or less than 1×1019/cm2, by removing the impurities with the present invention. Formation apparatuses are structured as stated in the specification in order to reduce the impurities in the organic compounds forming the organic light emitting elements.
摘要翻译：在具有由阴极和阳极之间的有机化合物制成的层的有机发光元件和发光的有机发光元件中，通过降低电极材料而导致诸如亮度和暗斑的降低等问题的氧浓度降低使用有机发光元件构造的器件。为了形成具有空穴注入层，空穴传输层，发光层，电子传输层等的层的有机发光元件，使用由有机化合物制成的层中所含有的杂质的平均浓度，通过除去本发明的杂质，将电子注入层减少到5×10 19 / cm 2以下，优选为1×10 19 / cm 2以下。为了减少形成有机发光元件的有机化合物中的杂质，形成装置按说明书所述进行结构化。

37. 发明授权

US07915611B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US07915611B2
公开(公告)日：2011-03-29
申请号：US12270425
申请日：2008-11-13
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/00 , H02N6/00
CPC分类号： H01L31/03685 , H01L31/02008 , H01L31/03762 , H01L31/0687 , H01L31/0725 , H01L31/1892 , H01L2224/73253 , H01L2924/12044 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02P70/521 , H01L2924/00
摘要： In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decline in productivity of the photoelectric conversion devices occurs. A first unit cell including a single crystal semiconductor layer with a thickness of 10 μm or less as a photoelectric conversion layer and a second unit cell including a non-single-crystal semiconductor layer as a photoelectric conversion layer, which is provided over the first unit cell, are at least included, and conductive clusters are dispersed between the unit cells. The conductive clusters are located between the lower-layer unit cell and the upper-layer unit cell to form an ohmic contact; thus, current flows between the both unit cells.
摘要翻译：为了在层叠型光电转换元件中形成上层单电池和下层电池之间的金属薄膜，硅化物膜等，还需要形成薄膜的工序。因此，出现诸如光电转换装置的生产率下降的问题。包括厚度为10μm以下的单晶半导体层作为光电转换层的第一单元电池和设置在第一单元上的非单晶半导体层作为光电转换层的第二单位电池至少包括，并且导电簇分散在单元电池之间。导电簇位于下层单元电池和上层单元电池之间以形成欧姆接触; 因此，电流在两个单元电池之间流动。

38. 发明授权

US07903229B2 Display device and method of fabricating the same 有权
公开(公告)号：US07903229B2
公开(公告)日：2011-03-08
申请号：US12264641
申请日：2008-11-04
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： G02F1/13
摘要： A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained.

39. 发明授权

US07888681B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07888681B2
公开(公告)日：2011-02-15
申请号：US12222672
申请日：2008-08-14
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1233 , H01L27/3262 , H01L29/04 , H01L29/41733 , H01L29/458 , H01L29/78696
摘要： A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.
摘要翻译：证明了包括具有优异的电特性和高可靠性的n沟道薄膜晶体管和p沟道薄膜晶体管的显示装置，并且还提供了其制造方法。显示装置包括反向交错的p沟道薄膜晶体管和反向交错的n沟道薄膜晶体管，其中栅极绝缘膜，微晶半导体膜和非晶半导体膜依次层叠在栅电极上。微晶半导体膜含有浓度为1×1016原子/ cm3以下的氧。 n沟道薄膜晶体管和p沟道薄膜晶体管的迁移率分别为10〜45cm2 / V·s，0.3cm2·V·s以下。

40. 发明授权

US07781770B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07781770B2
公开(公告)日：2010-08-24
申请号：US12485958
申请日：2009-06-17
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L29/04 , G02F1/133
CPC分类号： H01L27/124 , G02F1/133553 , G02F1/134336 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2001/136295 , G02F2201/123 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02631 , H01L21/02686 , H01L21/3003 , H01L27/1214 , H01L27/1218 , H01L27/1222 , H01L27/1251 , H01L27/1255 , H01L27/1285 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L27/3279 , H01L29/66537 , H01L29/78621 , H01L29/78633 , H01L29/78678 , H01L29/78684 , H01L29/78696
摘要： An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.
摘要翻译：具有像素结构的有源矩阵显示装置，其中像素电极，栅极布线和源极布线适当地布置在像素部分中，以实现高数值孔径，而不增加掩模的数量或台阶。该器件包括在绝缘表面上的栅电极和源极布线，栅电极和源极布线上的第一绝缘层，第一绝缘膜上的半导体层，半导体膜上的第二绝缘层，栅极布线连接到第二绝缘层上的栅电极，用于将源极布线和半导体层连接在一起的连接电极和连接到半导体层的像素电极。

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