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    • 32. 发明授权
    • Photomask blank, photomask, and method for manufacturing photomask blank
    • 光掩模坯料,光掩模以及制造光掩模坯料的方法
    • US08507155B2
    • 2013-08-13
    • US12935464
    • 2009-03-31
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • G03F1/46G03F1/50G03F1/58G03F1/80
    • G03F1/46G03F1/54G03F1/80
    • A photomask blank for a photomask used with an ArF excimer laser. The photo mask has a light transmissive substrate with a surface on which a light-shielding film is formed. The light-shielding film has a laminated structure comprising a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer. The thickness of the entire light-shielding film is 70 nm or less. The back-surface antireflection layer comprises a film containing a metal and having first etching rate. The front-surface antireflection layer comprises a film containing a metal and having a third etching rate. The light-shielding layer comprises a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer, with a second etching rate that is lower than the first and third etching rates. The thickness of the light-shielding layer is 45% or less of the thickness of the entire light-shielding film.
    • 用于与ArF准分子激光器一起使用的光掩模的光掩模坯料。 光掩模具有其上形成有遮光膜的表面的透光基板。 遮光膜具有包括背面防反射层,遮光层和前表面抗反射层的层叠结构。 整个遮光膜的厚度为70nm或更小。 背面抗反射层包括含有金属并具有第一蚀刻速率的膜。 前表面抗反射层包括含有金属并具有第三蚀刻速率的膜。 遮光层包括含有与背面防反射层或前表面抗反射层中所含金属相同的金属的膜,其第二蚀刻速率低于第一和第三蚀刻速率。 遮光层的厚度为整个遮光膜的厚度的45%以下。
    • 37. 发明授权
    • Foreign particle inspection apparatus and method with front and back
illumination
    • 具有前后照明的外来颗粒检查装置及方法
    • US5539514A
    • 1996-07-23
    • US269379
    • 1994-06-30
    • Hiroaki ShishidoShunichi Matsumoto
    • Hiroaki ShishidoShunichi Matsumoto
    • G01N21/94G01N21/956G01N21/00
    • G01N21/956G01N21/94
    • A method of inspecting a phase shift reticle comprising a transparent or translucent substrate, a circuit pattern of an opaque film formed on the front surface of the substrate and a pattern of a transparent or translucent film formed on the front surface of the substrate comprises: obliquely projecting a front illuminating light beam on the front surface of the substrate by a front illuminating system; concentrating scattered light scattered by the surface of the substrate and the surfaces of the patterns, obliquely projecting a back illuminating light beam on the back surface of the substrate by a back illuminating system, concentrating transmitted-and-diffracted light transmitted and diffracted by the substrate and the patterns; intercepting the scattered light scattered by the patterns and the transmitted-and-diffracted light transmitted and diffracted by the patterns with spatial filters disposed on Fourier transform planes, focusing the scattered light and the transmitted-and-diffracted light transmitted by the spatial filters on detectors; and comparing detection signals provided by the detectors to see if there are any foreign particles on the phase shift reticle.
    • 检查包括透明或半透明基板的相移掩模版的方法,形成在基板的前表面上的不透明膜的电路图案和形成在基板的前表面上的透明或半透明膜的图案包括: 通过前照明系统将前照明光束投影在基板的前表面上; 集中由基板表面和图案表面散射的散射光,通过后照明系统将后照明光束倾斜地投射在基板的背面上,集中由基板透射和衍射的透射衍射光 和模式; 截取由图案散射的散射光和通过布置在傅立叶变换平面上的空间滤光片通过图案传输和衍射的透射衍射光,将散射光和由空间滤光器透射的透射衍射光聚焦在检测器 ; 并比较由检测器提供的检测信号,以查看相移掩模版上是否存在任何异物。
    • 39. 发明申请
    • PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK
    • 相移屏蔽层和相位移屏蔽
    • US20110111332A1
    • 2011-05-12
    • US13001365
    • 2009-06-25
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • G03F1/00
    • G03F1/58G03F1/32
    • The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film.
    • 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料,其中:在透光基板上设置有遮光膜; 遮光膜具有层叠结构,其中从靠近透光基底的一侧依次层叠下层,中间层和上层; 整个遮光膜的厚度为60nm以下; 下层由含有金属的膜制成,具有第一蚀刻速率; 上层由含有金属的膜制成,具有第三蚀刻速率; 中间层由含有与下层或上层相同的金属的膜制成,具有比第一蚀刻速度和第三蚀刻速度低的第二蚀刻速率; 并且中间层的厚度为整个遮光膜的厚度的30%以下。