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31. 发明申请

US20050219767A1 Magneto-resistive element 有权
标题翻译：磁阻元件
公开(公告)号：US20050219767A1
公开(公告)日：2005-10-06
申请号：US11087762
申请日：2005-03-24
申请人： Shiho Nakamura , Shigeru Haneda
发明人： Shiho Nakamura , Shigeru Haneda
IPC分类号： G11C11/15 , G11B5/127 , G11B5/33 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , G11B5/39
摘要： A magneto-resistive element comprising a free layer having two ferromagnetic layers having a nonmagnetic layer interposed therebetween are coupled with each other in an anti-ferromagnetic manner, a difference between an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a first direction and an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a second direction which is opposite to the first direction is equal to or smaller than 5×10−15 emu, and planes parallel to a substrate of the ferromagnetic layers are smaller as the planes are distant from the substrate.
摘要翻译：包括具有插入其间具有非磁性层的两个铁磁层的自由层的磁阻元件以反铁磁方式彼此耦合，其中至少一个铁磁层的总磁化的绝对值之间的差异在其中磁化方向是第一方向，并且其中磁化方向是与第一方向相反的第二方向的至少一个铁磁层的磁化总和的绝对值等于或小于5×10 -15 平行于铁磁层的衬底的平面随着平面远离衬底而变小。

32. 发明申请

US20050190594A1 Magnetic element and magnetic element array 失效
公开(公告)号：US20050190594A1
公开(公告)日：2005-09-01
申请号：US11118443
申请日：2005-05-02
申请人： Shiho Nakamura , Shigeru Haneda , Hiroaki Yoda
发明人： Shiho Nakamura , Shigeru Haneda , Hiroaki Yoda
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , H01F10/32 , H01L27/22 , H01L43/08
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3263 , H01F10/329 , H01L27/228
摘要： A magnetic element comprises a first magnetic reference part (A) including a first ferromagnetic substance pinned in magnetization (M1) substantially in a first direction, a second magnetic reference part (E) including a second ferromagnetic substance pinned in magnetization (M3) substantially in a second direction, and a magnetic recording part (C) provided between the first and second magnetic reference parts. The magnetic recording part includes a third ferromagnetic substance. A spin transfer intermediate part (B) is provided between the first magnetic reference part and the magnetic recording part. An intermediate part (D) is provided between the second magnetic reference part and the magnetic recording part. A magnetization (M2) of the third ferromagnetic substance can be directed in a direction parallel or anti-parallel to the first direction by passing a writing current between the first magnetic reference part and the magnetic recording part. A relative relation between the second direction and the direction of the magnetization of the third ferromagnetic substance can be detected by passing a sense current between the second magnetic reference part and the magnetic recording part.

33. 发明授权

US06914807B2 Magnetic logic element and magnetic logic element array 有权
标题翻译：磁逻辑元件和磁逻辑元件阵列
公开(公告)号：US06914807B2
公开(公告)日：2005-07-05
申请号：US10401676
申请日：2003-03-31
申请人： Shiho Nakamura , Shigeru Haneda
发明人： Shiho Nakamura , Shigeru Haneda
IPC分类号： G11C11/16 , H03K19/168 , G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01F10/3263 , B82Y25/00 , G11C11/16 , H03K19/168
摘要： A magnetic logic element comprises a magnetic logic element cell having; a first and second magnetic parts; a MR intermediate part provided between the first and second magnetic parts. The magnetic logic element further includes a magnetization controlling part that controls a relation of directions of magnetizations of the first and second magnetic parts in accordance with a combination of a first binary input data and a second binary input data. A binary output data can be read by detecting a magnetoresistance effect of the first and second magnetic parts through the MR intermediate part.
摘要翻译：磁逻辑元件包括磁逻辑元件单元，其具有：第一和第二磁性部件; 设置在第一和第二磁性部件之间的MR中间部件。磁逻辑元件还包括磁化控制部分，其根据第一二进制输入数据和第二二进制输入数据的组合来控制第一和第二磁性部件的磁化方向的关系。可以通过检测通过MR中间部分的第一和第二磁性部件的磁阻效应来读取二进制输出数据。

34. 发明授权

US08982611B2 Magnetic memory element and magnetic memory apparatus 有权
标题翻译：磁存储元件和磁存储装置
公开(公告)号：US08982611B2
公开(公告)日：2015-03-17
申请号：US13526961
申请日：2012-06-19
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Junichi Akiyama
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Junichi Akiyama
IPC分类号： G11C11/00 , G11C11/16
CPC分类号： G11C11/1673 , G11C11/161 , Y10S977/933 , Y10S977/935
摘要： A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.
摘要翻译：磁存储元件包括第一磁性层，第二磁性层，第一中间层，第一磁性线，第一输入单元和第一检测单元。第一磁性层具有固定的磁化。第二磁性层具有可变的磁化。第一中间层位于第一磁性层和第二磁性层之间。第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。此外，通过将第一自旋波传播通过第一磁线并通过使第一电流从第一磁性层向第二磁性层传递来执行写入。通过将第二电流从第一磁性层传递到第二磁性层来进行读出。

35. 发明申请

US20130235653A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20130235653A1
公开(公告)日：2013-09-12
申请号：US13713482
申请日：2012-12-13
申请人： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161
摘要： A magnetic memory according to an embodiment includes: a magnetic structure extending in a first direction and having a circular ring-like shape in cross-section in a plane perpendicular to the first direction; a nonmagnetic layer formed on an outer surface of the magnetic structure, the outer surface extending in the first direction; and at least one reference portion formed on part of a surface of the nonmagnetic layer, the surface being on the opposite side from the magnetic structure, the at least one reference portion containing a magnetic material.
摘要翻译：根据实施例的磁存储器包括：在垂直于第一方向的平面中沿第一方向延伸并具有圆形环形形状的磁性结构，形成在所述磁性结构的外表面上的非磁性层，所述外表面沿所述第一方向延伸; 以及形成在非磁性层的表面的一部分上的至少一个参考部分，所述表面位于与磁性结构相反的一侧，所述至少一个参考部分包含磁性材料。

36. 发明申请

US20130077395A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20130077395A1
公开(公告)日：2013-03-28
申请号：US13422030
申请日：2012-03-16
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： G11C11/14 , G11C11/161 , G11C11/1675
摘要： A magnetic memory device comprises a magnetic wire extending in a first direction, a pair of first electrodes operable to pass a current through the magnetic wire in the first direction or in an opposite direction to the first direction, a first insulating layer provided on the magnetic wire in a second direction being substantially perpendicular to the first direction, a plurality of second electrodes provided on the first insulating layer and provided at specified interval in the second direction, and a third electrode electrically connected to the plurality of second electrodes.
摘要翻译：一种磁存储器件包括沿第一方向延伸的磁线，一对第一电极，可操作以使电流沿第一方向或与第一方向相反的方向通过磁线;第一绝缘层，设置在磁性在第二方向上的导线基本上垂直于第一方向;多个第二电极，设置在第一绝缘层上，并在第二方向上以规定的间隔设置，第三电极与多个第二电极电连接。

37. 发明申请

US20120280769A1 SPIN WAVE DEVICE 有权
标题翻译：旋转波形装置
公开(公告)号：US20120280769A1
公开(公告)日：2012-11-08
申请号：US13487769
申请日：2012-06-04
申请人： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
IPC分类号： H01P1/218
CPC分类号： H01P1/20345 , H01P1/203 , H03C1/34
摘要： A spin wave device according to an embodiment includes: an input interconnect transmitting an input impulse signal; a multilayer film including a foundation layer; a first magnetic layer formed on the multilayer film and generating spin waves when receiving the input impulse signal, the spin waves propagating through the first magnetic layer; a plurality of input electrodes arranged in a straight line on the first magnetic layer, being connected to the input interconnect, and transmitting the input impulse signal to the first magnetic layer; and a plurality of sensing electrodes sensing the spin waves, being arranged on the first magnetic layer, and being located at different distances from one another from the straight line having the input electrodes arranged therein, and the following equation is satisfied: d=Vg×t0.
摘要翻译：根据实施例的自旋波装置包括：输入互连件，其传输输入脉冲信号; 包括基底层的多层膜; 形成在所述多层膜上并在接收所述输入脉冲信号时产生自旋波的第一磁性层，所述自旋波通过所述第一磁性层传播; 多个输入电极，布置在第一磁性层上的直线上，连接到输入互连，并将输入脉冲信号传输到第一磁性层; 以及感测旋转波的多个感测电极，布置在第一磁性层上，并且与其中布置有输入电极的直线彼此不同的距离设置，满足以下等式：d = Vg× t0。

38. 发明申请

US20090052237A1 MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY APPARATUS 审中-公开
标题翻译：磁记忆装置和磁记忆装置
公开(公告)号：US20090052237A1
公开(公告)日：2009-02-26
申请号：US12107127
申请日：2008-04-22
申请人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi , Yuichi Ohsawa , Daisuke Saida
发明人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi , Yuichi Ohsawa , Daisuke Saida
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic memory element includes a laminated construction of a first electrode, a first pinned layer, a first intermediate layer, a memory layer, a second intermediate layer, a second pinned layer and a second electrode, and a third electrode coupled to the first intermediate layer and not directly coupled to the memory layer. The magnetization directions of the first pinned layer, the second pinned layer, and the memory layer are parallel or antiparallel to each other. The magnetization direction of the memory layer takes a first direction when the current is passed with a first polarity so that the current flowing through the first pinned layer exceeds a first threshold. The magnetization direction of the memory layer takes a second direction when the current is passed with a second polarity so that the current flowing through the first pinned layer exceeds a second threshold.
摘要翻译：磁存储元件包括第一电极，第一被钉扎层，第一中间层，存储层，第二中间层，第二被钉扎层和第二电极的层压结构，以及耦合到第一中间体层并且不直接耦合到存储器层。第一被钉扎层，第二钉扎层和存储层的磁化方向彼此平行或反平行。当电流以第一极性通过时，存储层的磁化方向取第一方向，使得流过第一被钉扎层的电流超过第一阈值。当电流以第二极性通过时，存储层的磁化方向采取第二方向，使得流过第一被钉扎层的电流超过第二阈值。

39. 发明授权

US08797060B2 Signal processing device using magnetic film and signal processing method 有权
标题翻译：信号处理装置采用磁膜和信号处理方法
公开(公告)号：US08797060B2
公开(公告)日：2014-08-05
申请号：US12659275
申请日：2010-03-02
申请人： Shiho Nakamura , Hirofumi Morise
发明人： Shiho Nakamura , Hirofumi Morise
IPC分类号： H01L43/02 , H01L41/12 , H03K3/45
CPC分类号： H01L43/08 , H03K19/18
摘要： A signal processing device includes a continuous film, a plurality of spin wave generators, and at least one signal detector. The continuous film includes at least one magnetic layer. The plurality of spin wave generators are provided on the continuous film in such a manner as to be in direct contact with the continuous film or be in contact with the continuous film while having an insulation layer interposed therebetween, and each has a contact surface with the continuous film in a dot shape and generates a spin wave in a region of the magnetic layer of the continuous film by receiving an input signal, the region being immediately under the contact surface. The signal detector is provided on the continuous film and detects, as an electrical signal, the spin waves generated by the spin wave generators and propagating through the continuous film.
摘要翻译：信号处理装置包括连续膜，多个自旋波发生器和至少一个信号检测器。连续膜包括至少一个磁性层。多个自旋波发生器以与连续膜直接接触的方式设置在连续膜上，或者与连续膜接触，同时具有绝缘层，并且每个具有与该连续膜的接触表面连续的薄膜，并且通过接收输入信号而在连续薄膜的磁性层的区域中产生自旋波，该区域紧邻接触表面。信号检测器设置在连续膜上，并且作为电信号检测由自旋波发生器产生的自旋波并通过连续膜传播。

40. 发明授权

US08745120B2 Adder 失效
标题翻译：加法器
公开(公告)号：US08745120B2
公开(公告)日：2014-06-03
申请号：US13349871
申请日：2012-01-13
申请人： Hirofumi Morise , Shiho Nakamura , Daisuke Saida , Tsuyoshi Kondo
发明人： Hirofumi Morise , Shiho Nakamura , Daisuke Saida , Tsuyoshi Kondo
IPC分类号： G06F7/50
CPC分类号： G06F7/388
摘要： According to an embodiment, an adder includes first and second wave computing units and a threshold wave computing unit. Each of the first and second wave computing units includes a pair of first input sections, a first wave transmission medium having a continuous film including a magnetic body connected to the first input sections, and a first wave detector outputting a result of computation by spin waves induced in the first wave transmission medium by the signals corresponding to the two bit values. The threshold wave computing unit includes a plurality of third input sections, a third wave transmission medium having a continuous film including a magnetic body connected to the third input sections, and a third wave detector a result of computation by spin waves induced in the third wave transmission medium.
摘要翻译：根据实施例，加法器包括第一和第二波计算单元和阈值波计算单元。第一和第二波形计算单元中的每一个包括一对第一输入部分，具有包括连接到第一输入部分的磁体的连续膜的第一波传播介质和输出通过自旋波的计算结果的第一波检测器在第一波传输介质中通过对应于两位值的信号感应。阈值波计算单元包括多个第三输入部分，具有包括连接到第三输入部分的磁体的连续胶片的第三波传播介质，以及第三波检测器，由第三波中感应的自旋波的计算结果传输介质。

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