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31. 发明授权

US08716836B2 Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device 失效
标题翻译：半导体晶片，半导体晶片制造方法和电子器件
公开(公告)号：US08716836B2
公开(公告)日：2014-05-06
申请号：US12811011
申请日：2008-12-26
申请人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
发明人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
IPC分类号： H01L21/331 , H01L29/737
CPC分类号： H01L21/8258 , H01L21/02381 , H01L21/0245 , H01L21/02546 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/8252 , H01L29/66318
摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.
摘要翻译：实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。提供了包括Si晶片的半导体晶片; 所述抑制层形成在所述晶片上并且抑制晶体生长，所述抑制层包括覆盖所述晶片的一部分的覆盖区域和不覆盖所述覆盖区域内的所述晶片的一部分的开放区域; 在开放区域晶体生长的Ge层; 以及在Ge层上晶体生长的功能层。 Ge层可以通过使得能够移动晶体缺陷的温度和持续时间退火而形成，并且退火重复多次。

32. 发明申请

US20130288127A1 PRODUCTION METHOD OF CARBON MATERIAL FOR SODIUM SECONDARY BATTERY 审中-公开
标题翻译：用于钠二次电池的碳材料的生产方法
公开(公告)号：US20130288127A1
公开(公告)日：2013-10-31
申请号：US13979049
申请日：2011-12-12
申请人： Shingo Matsumoto , Taketsugu Yamamoto , Junji Suzuki
发明人： Shingo Matsumoto , Taketsugu Yamamoto , Junji Suzuki
IPC分类号： H01M4/133 , H01M4/131 , H01M4/62 , H01M4/1393
CPC分类号： H01M4/133 , C01B32/05 , H01M4/1393 , H01M4/485 , H01M4/587 , H01M4/623 , H01M10/054
摘要： The invention provides a method for producing a carbon material as a negative electrode active material that can dope and undope a sodium ion. The production method of a carbon material for a sodium secondary battery includes a step of heating at a temperature of 800 to 2500° C. a compound according to Formula (1), Formula (2) or Formula (3), and having 2 or more oxygen atoms, or a mixture of an aromatic derivative 1 having an oxygen atom in the molecule and an aromatic derivative 2 having a carboxyl group in the molecule and being different from the aromatic derivative 1.
摘要翻译：本发明提供一种碳素材料的制造方法，所述碳材料作为负极活性物质，可以使钠离子掺杂并且不溶解。钠二次电池用碳材料的制造方法包括在800〜2500℃的温度下加热式（1），式（2）或式（3）的化合物，并且具有2或或分子中具有氧原子的芳族衍生物1和分子中具有羧基的芳族衍生物2与芳族衍生物1不同的混合物。

33. 发明申请

US20120244441A1 SILICON FILM AND LITHIUM SECONDARY BATTERY 审中-公开
标题翻译：硅胶片和锂二次电池
公开(公告)号：US20120244441A1
公开(公告)日：2012-09-27
申请号：US13514893
申请日：2010-12-10
申请人： Suguru Noda , Shingo Morokuma , Taketsugu Yamamoto
发明人： Suguru Noda , Shingo Morokuma , Taketsugu Yamamoto
IPC分类号： C01B33/02 , B32B5/06 , C23C16/24 , C23C16/30 , B32B15/04 , H01M4/38 , B82Y30/00
CPC分类号： H01M10/052 , C23C14/14 , C23C14/541 , H01G11/06 , H01G11/24 , H01G11/28 , H01M4/0421 , H01M4/134 , H01M4/1395 , Y02E60/13 , Y02T10/7011 , Y02T10/7022 , Y10T428/249921
摘要： Provided are a silicon film which can give an electrode suitable for use in high-capacity lithium secondary batteries, and a process for easily producing the silicon film. The silicon film comprises a columnar aggregate which is an aggregate of columnar structures made of Si or a Si compound. The silicon film may be a film wherein the diameter of the columnar structures is from 10 nm to 100 nm and the film thickness is from 0.2 μm to 100 μm. In the process for preparing a silicon film on a substrate by vapor deposition using a vapor deposition source made of Si or a Si compound, the temperature of the vapor deposition source is 1700 K or higher, the temperature of the substrate is lower than that of the vapor deposition source, and the temperature difference between the vapor deposition source and the substrate is 700 K or larger. In the process for preparing the silicon film, the distance (D) between the vapor deposition source and the substrate is shorter than the minimum diameter (P) of the substrate, the minimum diameter (P) being determined by viewing the substrate from the perpendicular direction. Also provided are an electrode comprising the silicon film, and a lithium secondary battery comprising the electrode as a negative electrode.
摘要翻译：提供一种能够提供适用于大容量锂二次电池的电极的硅膜，以及容易制造硅膜的方法。硅膜包括柱状聚集体，其是由Si或Si化合物制成的柱状结构的聚集体。硅膜可以是其中柱状结构的直径为10nm至100nm并且膜厚度为0.2μm至100μm的膜。在通过使用由Si或Si化合物制成的气相沉积源通过气相沉积在衬底上制备硅膜的方法中，气相沉积源的温度为1700K或更高，衬底的温度低于蒸镀源和蒸镀源与基板的温度差为700K以上。在制备硅膜的过程中，蒸镀源与衬底之间的距离（D）比衬底的最小直径（P）短，最小直径（P）通过从垂直方向观察衬底来确定方向。还提供了包括硅膜的电极和包含该电极作为负电极的锂二次电池。

34. 发明申请

US20100323231A1 POSITIVE ELECTRODE ACTIVE MATERIAL, SODIUM SECONDARY BATTERY, AND PRODUCTION METHOD OF OLIVINE-TYPE PHOSPHATE 有权
标题翻译：阳极电极活性材料，钠二次电池和奥氏体型磷酸盐的生产方法
公开(公告)号：US20100323231A1
公开(公告)日：2010-12-23
申请号：US12864715
申请日：2009-01-23
申请人： Maiko Sakai , Taketsugu Yamamoto , Masami Makidera , Satoru Kuze , Takeshi Hattori
发明人： Maiko Sakai , Taketsugu Yamamoto , Masami Makidera , Satoru Kuze , Takeshi Hattori
IPC分类号： H01M4/58 , H01M2/16 , H01M4/88
CPC分类号： H01M4/5825 , C01B25/37 , C01B25/45 , C01P2002/74 , H01M2/1653 , H01M2/1686 , H01M2/348 , H01M4/381 , H01M4/40 , H01M10/052 , H01M10/054 , H01M10/36 , H01M2200/10 , Y02T10/7011
摘要： Disclosed are a positive electrode active material and a method for producing an olivine-type phosphate. The positive electrode active material comprises an olivine-type phosphate represented by the following formula (I), wherein the maximum peak in an X-ray diffraction pattern obtained using a CuKα ray is the peak of the (031) plane of the olivine-type phosphate and the half-value width of the peak is 1.5° or less: AaMbPO4 (I), wherein A represents one or more elements selected from among alkali metals; M represents one or more elements selected from among transition metals; a is from 0.5 to 1.5; and b is from 0.5 to 1.5. The method for producing an olivine-type phosphate comprises preparing a raw material comprising element A, element M, and phosphorus (P) so that a A:M:P molar ratio may be a:b:1, preliminary calcining the raw material, and mainly calcining the preliminary calcined raw material.
摘要翻译：公开了正极活性物质和橄榄石型磷酸盐的制造方法。正极活性物质包括由下式（I）表示的橄榄石型磷酸盐，其中使用CuKα射线获得的X射线衍射图中的最大峰为橄榄石型（031）的（031）面的峰值磷酸盐，峰值的半值宽度为1.5°以下：AaMbPO4（I），其中A表示选自碱金属中的一种或多种元素; M表示选自过渡金属中的一种或多种元素; a为0.5〜1.5; b为0.5〜1.5。橄榄石型磷酸盐的制造方法包括：制备包含元素A，元素M和磷（P）的原料，使得A:M:P摩尔比可以为a:b:1，对原料进行预煅烧，并主要煅烧预煅烧原料。

35. 发明申请

US20100266900A1 SODIUM-MANGANESE MIXED METAL OXIDE, PRODUCTION METHOD THEREOF AND SODIUM SECONDARY BATTERY 审中-公开
标题翻译：氧化锰 - 锰锰混合金属氧化物，其生产方法和钠二次电池
公开(公告)号：US20100266900A1
公开(公告)日：2010-10-21
申请号：US12743971
申请日：2008-11-17
申请人： Masami Makidera , Taketsugu Yamamoto , Satoru Kuze
发明人： Masami Makidera , Taketsugu Yamamoto , Satoru Kuze
IPC分类号： H01M4/50 , H01M4/88
CPC分类号： H01M10/054 , C01G45/1228 , C01P2002/72 , C01P2002/76 , C01P2006/40 , H01M2/1653 , H01M2/1686 , H01M4/505
摘要： Disclosed is a mixed metal oxide which is reduced in the amount of scarce metal used therein, while having excellent performance as a positive electrode active material for secondary batteries. Also disclosed are a positive electrode for sodium secondary batteries having excellent performance, and a sodium secondary battery. Specifically disclosed is a method for producing a sodium-manganese complex metal oxide which is characterized by comprising a step for calcining a material, which contains sodium carbonate (Na2CO3) and dimanganese trioxide (Mn2O3) in such amounts that the molar ratio of sodium to manganese (Na/Mn) is not less than 0.4 but not more than 0.7, at a temperature of not less than 850° C. Also specifically disclosed are a sodium-manganese complex metal oxide produced by the method, a positive electrode for sodium secondary batteries which contains such a sodium-manganese complex metal oxide, and a sodium secondary battery.
摘要翻译：公开了一种混合金属氧化物，其中使用的稀有金属的量减少，同时具有作为二次电池的正极活性物质的优异的性能。还公开了具有优异性能的钠二次电池用正极和钠二次电池。具体公开了一种钠锰复合金属氧化物的制造方法，其特征在于，包括使含有碳酸钠（Na 2 CO 3）和三氧化二锰（Mn 2 O 3）的物质煅烧的工序，使得钠与锰的摩尔比（Na / Mn）在不低于850℃的温度下不小于0.4但不大于0.7。还具体公开了通过该方法生产的钠锰复合金属氧化物，钠二次电池用正极其含有这样的钠锰复合金属氧化物和钠二次电池。

36. 发明申请

US20100248001A1 MIXED METAL OXIDE AND SODIUM SECONDARY BATTERY 审中-公开
标题翻译：混合金属氧化物和钠二次电池
公开(公告)号：US20100248001A1
公开(公告)日：2010-09-30
申请号：US12741962
申请日：2008-11-04
申请人： Satoru Kuze , Masami Makidera , Taketsugu Yamamoto
发明人： Satoru Kuze , Masami Makidera , Taketsugu Yamamoto
IPC分类号： H01M4/131 , H01M2/16
CPC分类号： H01M4/523 , C01G49/0027 , C01G49/0072 , C01P2002/20 , C01P2002/72 , H01M2/1686 , H01M2/34 , H01M10/36 , H01M10/4235 , H01M2004/028
摘要： Disclosed is a mixed metal oxide which is extremely useful as a positive electrode active material for secondary batteries, while being reduced in the amount of a scarce metal used therein. Also disclosed are a positive electrode for sodium secondary batteries, and a sodium secondary battery. Specifically disclosed is a mixed metal oxide having an α-NaFeO2 type (layered rocksalt-type) crystal structure and represented by the following formula: NaxFe1-yMyO2 (wherein M represents one or more elements selected from the group consisting of group 4 elements, group 5 elements, group 6 elements and group 14 elements of the IUPAC periodic table and Mn; x represents a value more than 0.5 but less than 1; and y represents a value more than 0 but less than 0.5). Also specifically disclosed are a positive electrode for sodium secondary batteries, which contains the mixed metal oxide, and a sodium secondary battery.
摘要翻译：公开了作为二次电池用正极活性物质极其有用的混合金属氧化物，同时减少其中使用的稀有金属的量。还公开了钠二次电池用正极和钠二次电池。具体公开了具有α-NaFeO 2型（层状岩盐型）晶体结构并由下式表示的混合金属氧化物：NaxFe1-yMyO2（其中M表示选自第4族元素，基团 IUPAC周期表的5个元素，6个元素和14个元素，Mn; x表示大于0.5但小于1的值; y表示大于0但小于0.5的值）。还具体公开了含有混合金属氧化物的钠二次电池用正极和钠二次电池。

37. 发明申请

US20060234400A1 Method of judging quality of semiconductor epitaxial crystal wafer and wafer manufacturing method using the same 审中-公开
标题翻译：判断半导体外延晶体晶片的质量的方法和使用其的晶片制造方法
公开(公告)号：US20060234400A1
公开(公告)日：2006-10-19
申请号：US10546289
申请日：2004-02-19
申请人： Masaaki Nakayama , Tomoyuki Takada , Taketsugu Yamamoto
发明人： Masaaki Nakayama , Tomoyuki Takada , Taketsugu Yamamoto
IPC分类号： H01L21/66 , H01L21/44 , G01R31/26
CPC分类号： G01N21/1717
摘要： In a method of determining the quality of a semiconductor epitaxial crystal wafer having a buffer structure portion comprised of epitaxial layers the semiconductor epitaxial crystal wafer (S) is irradiated with pulsed exciting light (5A) to modulate an internal electric field of the buffer structure portion, the electric transport properties deriving from the crystal quality of the buffer structure of the semiconductor epitaxial crystal wafer (S) are predicted based on a spectral difference in reflectance in reflection probe light (3B) from the semiconductor epitaxial crystal wafer (S), to determine the crystal quality of the buffer structure portion. The crystal quality may also be determined based on electric field strength calculated from Franz-Keldysh oscillation originating in the semiconductor chemical compound of the buffer structure portion.
摘要翻译：在确定具有由外延层构成的缓冲结构部分的半导体外延晶体晶片的质量的方法中，半导体外延晶体晶片（S）用脉冲激光（5A）照射以调制缓冲结构的内部电场基于来自半导体外延晶体晶片（S）的反射探测光（3B）的反射率的光谱差，预测从半导体外延晶体晶片（S）的缓冲结构的晶体质量得到的电输送特性，，以确定缓冲结构部分的晶体质量。晶体质量也可以基于源自缓冲结构部分的半导体化合物的Franz-Keldysh振荡计算的电场强度来确定。

38. 发明授权

US6087031A Polymer electrolyte and process for producing the same 失效
标题翻译：聚合物电解质及其制备方法
公开(公告)号：US6087031A
公开(公告)日：2000-07-11
申请号：US997547
申请日：1997-12-23
申请人： Katsuhiko Iwasaki , Taketsugu Yamamoto , Atsushi Terahara , Michihisa Isobe
发明人： Katsuhiko Iwasaki , Taketsugu Yamamoto , Atsushi Terahara , Michihisa Isobe
IPC分类号： C08G75/23 , C08J5/20 , H01M8/02 , H01M8/10
CPC分类号： H01M8/1072 , C08J5/20 , H01M8/1027 , H01M8/1032 , H01M8/1067 , Y02P70/56
摘要： A polymer electrolyte comprising a sulfonated polyethersulfone having an ion-exchange group equivalent weight of 870 to 5000 g/mol, which is obtainable by sulfonating a polyethersulfone having the structural unit represented by the following structural formula, ##STR1## The polymer electrolyte is cheap, easily mold-processable by virtue of soluble property in organic solvent and thermoplastic property, easily film-processable, highly water-resistant, and suitable for a fuel cell.
摘要翻译：包含具有870〜5000g / mol的离子交换基当量的磺化聚醚砜的聚合物电解质，其可通过磺化具有由下列结构式表示的结构单元的聚醚砜获得。该聚合物电解质便宜，由于在有机溶剂中的可溶性和热塑性能可加工，易于加工膜，高度防水，并且适用于燃料电池。

39. 发明授权

US5595842A Lithium secondary battery having a cathode containing galliam 失效
标题翻译：具有阴极的锂二次电池
公开(公告)号：US5595842A
公开(公告)日：1997-01-21
申请号：US438654
申请日：1995-05-09
申请人： Kenji Nakane , Yasunori Nishida , Chikashi Akamatsu , Tomoari Satoh , Kazuyuki Tanino , Taketsugu Yamamoto
发明人： Kenji Nakane , Yasunori Nishida , Chikashi Akamatsu , Tomoari Satoh , Kazuyuki Tanino , Taketsugu Yamamoto
IPC分类号： H01M4/52 , H01M4/525 , H01M10/052 , H01M10/36
CPC分类号： H01M10/052 , H01M4/525 , Y02T10/7011
摘要： A lithium secondary battery that includes a cathode containing, as an active material, a material that can be doped/undoped with lithium ions; an anode containing, as an active material, a lithium metal, a lithium alloy or a material that can be doped/undoped with lithium ions; and a liquid or solid electrolyte. In this lithium secondary battery, the active material used in the cathode is lithiated nickel dioxide containing gallium. As a result, the lithium secondary battery attains excellent cycle and overcharge resistance characteristics and has a high energy density.
摘要翻译：一种锂二次电池，其包括含有可掺杂/未掺杂锂离子的材料作为活性材料的阴极; 含有作为活性物质的锂金属，锂合金或可掺杂/未掺杂锂离子的材料的阳极; 和液体或固体电解质。在该锂二次电池中，阴极中使用的活性物质是含有镓的锂化二氧化镍。结果，锂二次电池具有优异的循环和过充电电阻特性并且具有高的能量密度。

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