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31. 发明授权

US11085112B2 Susceptor with ring to limit backside deposition 有权
公开(公告)号：US11085112B2
公开(公告)日：2021-08-10
申请号：US13284231
申请日：2011-10-28
申请人： Mark Hawkins , Matthew G. Goodman , Shawn Thomas
发明人： Mark Hawkins , Matthew G. Goodman , Shawn Thomas
IPC分类号： C23C16/455 , H01L21/687 , C23C16/458 , H01L21/67
摘要： A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.

32. 外观设计

USD679058S1 Helmet liner 有权
公开(公告)号：USD679058S1
公开(公告)日：2013-03-26
申请号：US29396593
申请日：2011-07-01
申请人： Ron Szalkowski , Shawn Thomas
设计人： Ron Szalkowski , Shawn Thomas

33. 发明申请

US20130055236A1 METHOD AND SYSTEM FOR INTEGRATED ASSET MANAGEMENT 有权
标题翻译：集成资产管理方法与系统
公开(公告)号：US20130055236A1
公开(公告)日：2013-02-28
申请号：US13609165
申请日：2012-09-10
申请人： Shawn Thomas , Gregory Gray , Michael Woodfin , Warner Mizell , Brian Thomas
发明人： Shawn Thomas , Gregory Gray , Michael Woodfin , Warner Mizell , Brian Thomas
IPC分类号： G06F9/445
CPC分类号： G06F17/30864 , G06F9/4451 , G06F17/211 , G06F17/24 , G06F17/30 , G06Q10/06 , G06Q30/02 , G06Q40/02 , G06Q99/00 , Y10S707/99948
摘要： The method and system of the present invention provides an improved technique for integrated asset management. Information is aggregated from a variety of sources into a centralized computerized database. Thereafter, asset transition events are scheduled. Information from the centralized computerized database is used in the performance of the asset transition events and information relating to the asset transition events is added to the centralized computerized database. Subsequent changes to the asset are also recorded into the centralized computerized database. As a result, a plethora of information is available within said database for the purpose of managing future asset transition events.
摘要翻译：本发明的方法和系统提供了一种用于综合资产管理的改进技术。信息从各种来源汇总到一个集中的计算机数据库中。此后，资产转换事件被安排。集中计算机数据库中的信息用于资产转移事件的执行，资产转移事件相关信息被添加到集中的计算机数据库中。资产的后续更改也记录在集中的计算机化数据库中。因此，为了管理未来的资产转换事件，在所述数据库中可以获得大量的信息。

34. 发明授权

US08321468B2 Web-based asset management 有权
标题翻译：基于网络的资产管理
公开(公告)号：US08321468B2
公开(公告)日：2012-11-27
申请号：US12916410
申请日：2010-10-29
申请人： Shawn Thomas , Gregory Gray , Michael Woodfin , Warner Mizell , Brian Thomas
发明人： Shawn Thomas , Gregory Gray , Michael Woodfin , Warner Mizell , Brian Thomas
IPC分类号： G06F17/30
CPC分类号： G06F17/30864 , G06F9/4451 , G06F17/211 , G06F17/24 , G06F17/30 , G06Q10/06 , G06Q30/02 , G06Q40/02 , G06Q99/00 , Y10S707/99948
摘要： The method and system of the present invention provides an improved technique for replacing, implementing and managing computer-related assets. A technician accesses the World Wide Web through a user's computer. The information resident on the computer, including information regarding the computer and the user's preferences, are downloaded to a remote storage medium through the World Wide Web. Once downloaded, all information may be removed from the user's computer. Subsequently, the technician accesses another computer such as, for example, a new computer that has been assigned to the same user. The technician accesses the World Wide Web through the new computer and downloads the information previously stored on the remote storage medium. This information can then be used to install the user's prior applications, settings and preferences on the new computer.
摘要翻译：本发明的方法和系统提供了一种用于替换，实施和管理计算机相关资产的改进技术。技术人员通过用户的计算机访问万维网。计算机上驻留的信息（包括有关计算机的信息和用户的偏好）通过万维网下载到远程存储介质。一旦下载，所有信息可能会从用户的计算机中删除。随后，技术人员访问另一台计算机，例如已分配给同一用户的新计算机。技术人员通过新计算机访问万维网，并下载先前存储在远程存储介质上的信息。然后，可以将此信息用于在新计算机上安装用户的先前应用程序，设置和首选项。

35. 发明授权

US07765181B2 Web-based asset management 有权
标题翻译：基于网络的资产管理
公开(公告)号：US07765181B2
公开(公告)日：2010-07-27
申请号：US10464176
申请日：2003-06-18
申请人： Shawn Thomas , Gregory Gray , Michael Woodfin , Warner Mizell , Brian Thomas
发明人： Shawn Thomas , Gregory Gray , Michael Woodfin , Warner Mizell , Brian Thomas
IPC分类号： G06F17/30
CPC分类号： G06F17/30864 , G06F9/4451 , G06F17/211 , G06F17/24 , G06F17/30 , G06Q10/06 , G06Q30/02 , G06Q40/02 , G06Q99/00 , Y10S707/99948
摘要： The method and system of the present invention provides an improved technique for replacing, implementing and managing computer-related assets. A technician accesses the World Wide Web through a user's computer. The information resident on the computer, including information regarding the computer and the user's preferences, are downloaded to a remote storage medium through the World Wide Web. Once downloaded, all information may be removed from the user's computer. Subsequently, the technician accesses another computer such as, for example, a new computer that has been assigned to the same user. The technician accesses the World Wide Web through the new computer and downloads the information previously stored on the remote storage medium. This information can then be used to install the user's prior applications, settings and preferences on the new computer.
摘要翻译：本发明的方法和系统提供了一种用于替换，实施和管理计算机相关资产的改进技术。技术人员通过用户的计算机访问万维网。计算机上驻留的信息（包括有关计算机的信息和用户的偏好）通过万维网下载到远程存储介质。一旦下载，所有信息可能会从用户的计算机中删除。随后，技术人员访问另一台计算机，例如已分配给同一用户的新计算机。技术人员通过新计算机访问万维网，并下载先前存储在远程存储介质上的信息。然后，可以将此信息用于在新计算机上安装用户的先前应用程序，设置和首选项。

36. 发明申请

US20100068828A1 METHOD OF FORMING A STRUCTURE HAVING A GIANT RESISTANCE ANISOTROPY OR LOW-K DIELECTRIC 审中-公开
标题翻译：形成具有抗电偶性或低K电介质结构的方法
公开(公告)号：US20100068828A1
公开(公告)日：2010-03-18
申请号：US11584078
申请日：2006-10-20
申请人： Shawn Thomas , Steven Smith , Yi Wei
发明人： Shawn Thomas , Steven Smith , Yi Wei
IPC分类号： H01L21/3205
CPC分类号： B82Y30/00 , B82Y40/00 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/14 , H01L45/144 , H01L45/148
摘要： A method is provided involving the growth of carbon nanotubes to provide giant resistance anisotropy or a low-k dielectric. The method comprises growing a plurality of one-dimensional nanostructures (18) orthogonal to a first conductive layer (14). A dielectric material (22, 32, 60) is formed covering the plurality of one-dimensional nanostructures and then etched to remove a portion of the dielectric material (22, 32, 60) to expose the ends (24, 34, 68) of the one-dimensional nanostructures (18). A second conductive layer (26, 36, 84) is formed over the dielectric material (22, 32, 60) to make contact with the ends (24, 34, 68) of the one-dimensional nanostructures (18). One or both of the first (14) and second (26, 36, 84) layers may be patterned for accessing individual or groups of the one-dimensional nanostructures (18). In another exemplary embodiment, the one-dimensional nanostructures (18) may be removed prior to forming the second layer (84), thereby creating a high-k dielectric layer (32) between the first and second layers (14, 84).
摘要翻译：提供了一种涉及碳纳米管生长以提供巨大电阻各向异性或低k电介质的方法。该方法包括生长与第一导电层（14）正交的多个一维纳米结构（18）。形成覆盖多个一维纳米结构的电介质材料（22,32,60），然后蚀刻以去除电介质材料（22,32,60）的一部分以暴露端部（24,34,68）的端部一维纳米结构（18）。在电介质材料（22,32,60）之上形成第二导电层（26,36,84）以与一维纳米结构（18）的端部（24,34,68）接触。第一（14）和第二（26,36,84）层中的一个或两个可以被图案化以访问一维纳米结构（18）的单个或一组。在另一示例性实施例中，可以在形成第二层（84）之前去除一维纳米结构（18），从而在第一和第二层（14,84）之间形成高k电介质层（32）。

37. 发明申请

US20090075029A1 STRESSOR FOR ENGINEERED STRAIN ON CHANNEL 有权
标题翻译：工程应变通道压力
公开(公告)号：US20090075029A1
公开(公告)日：2009-03-19
申请号：US11858054
申请日：2007-09-19
申请人： Shawn Thomas , Pierre Tomasini
发明人： Shawn Thomas , Pierre Tomasini
IPC分类号： H01L21/36 , B32B3/00
CPC分类号： H01L29/0847 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02639 , H01L29/165 , H01L29/66636 , H01L29/78 , H01L29/7848 , Y10T428/2462
摘要： A semiconductor substrate having recesses filled with heteroepitaxial silicon-containing material with different portions having different impurity concentrations. Strained layers can fill recessed source/drain regions in a graded, bottom-up fashion. Layers can also line recess sidewalls with one concentration of strain-inducing impurity and fill the remainder to the recess with a lower concentration of the impurity. In the latter case, the sidewall liner can be tapered.
摘要翻译：一种具有填充异质外延含硅材料的凹槽的半导体衬底，具有不同部分的不同杂质浓度。应变层可以以分级，自下而上的方式填充凹陷的源极/漏极区域。层也可以用一个浓度的应变诱导杂质排列凹陷侧壁，并将剩余部分填充到具有较低浓度杂质的凹部。在后一种情况下，侧壁衬套可以是锥形的。

38. 发明申请

US20080177753A1 METHOD AND SYSTEM FOR ASSET TRANSITION PROJECT MANAGEMENT 有权
标题翻译：资产过渡项目管理方法与系统
公开(公告)号：US20080177753A1
公开(公告)日：2008-07-24
申请号：US12056969
申请日：2008-03-27
申请人： Shawn Thomas , Michael Woodfin
发明人： Shawn Thomas , Michael Woodfin
IPC分类号： G06F17/30
CPC分类号： G06F17/30864 , G06F9/4451 , G06F17/211 , G06F17/24 , G06F17/30 , G06Q10/06 , G06Q30/02 , G06Q40/02 , G06Q99/00 , Y10S707/99948
摘要： The method and system of the present invention provides an improved method for asset transition project management. Information is aggregated from a variety of sources into a centralized computerized database. Thereafter, assets that are electronically connected to the computerized database are monitored. If a transition occurs, information concerning the transition is input into the computerized database on a real-time basis during the implementation of the transition. The information input into the computerized database can be used to manage the transition.
摘要翻译：本发明的方法和系统提供了资产转换项目管理的改进方法。信息从各种来源汇总到一个集中的计算机数据库中。此后，监视与电脑化数据库电子连接的资产。如果发生转换，则在实施过渡期间，将有关转换的信息实时输入计算机化数据库。输入计算机化数据库的信息可用于管理转换。

39. 发明申请

US20060040433A1 Graded semiconductor layer 有权
标题翻译：分级半导体层
公开(公告)号：US20060040433A1
公开(公告)日：2006-02-23
申请号：US10919952
申请日：2004-08-17
申请人： Mariam Sadaka , Shawn Thomas , Ted White , Chun-Li Liu , Alexander Barr , Bich-Yen Nguyen , Voon-Yew Thean
发明人： Mariam Sadaka , Shawn Thomas , Ted White , Chun-Li Liu , Alexander Barr , Bich-Yen Nguyen , Voon-Yew Thean
IPC分类号： H01L21/84
CPC分类号： H01L29/78687 , H01L29/1054 , H01L29/6659 , H01L29/66742
摘要： A process for forming a semiconductor device. The process includes forming a template layer for forming a layer of strained silicon. In one example a layer of graded silicon germanium is formed where the germanium is at a higher concentration at the lower portion and at a lower concentration at a top portion. When subject to a condensation process, the germanium of the top portion of the layer diffuses to a remaining portion of the silicon germanium layer. Because the silicon germanium layer has a higher concentration of germanium at lower portions, germanium pile up after condensation may be reduced at the upper portion of the remaining portion of the silicon germanium layer.
摘要翻译：一种形成半导体器件的方法。该方法包括形成用于形成应变硅层的模板层。在一个示例中，形成梯度硅锗层，其中锗在下部处具有较高的浓度，在顶部处的浓度较低。当进行冷凝处理时，层的顶部的锗扩散到硅锗层的剩余部分。由于硅锗层在下部具有较高的锗浓度，所以在硅锗层的剩余部分的上部可以减少在冷凝后堆积的锗。

40. 发明申请

US20060006278A1 Kite 失效
标题翻译：风筝
公开(公告)号：US20060006278A1
公开(公告)日：2006-01-12
申请号：US10880770
申请日：2004-06-28
申请人： Shawn Thomas
发明人： Shawn Thomas
IPC分类号： B64C27/22
CPC分类号： A63H27/08 , A63H27/002
摘要： A kite has a cover sheet having first and second opposed main surfaces. A frame assembly is attached to the second main surface of the cover sheet to define a body having an overall height and an overall width. The frame assembly has frame members connected together to form a generally conical-shaped sector portion defining an air passage through which air flows when the kite is in flight. A rotational vane is mounted on the frame assembly for undergoing rotation to regulate the flow of air flowing through the air passage when the kite is in flight.
摘要翻译：风筝具有具有第一和第二相对主表面的覆盖片。框架组件附接到盖板的第二主表面以限定具有整体高度和总宽度的主体。框架组件具有连接在一起的框架构件以形成限定空气通道的大致圆锥形的扇形部分，当风筝在飞行中空气通过该通道。旋转叶片安装在框架组件上以进行旋转以调节当风筝在飞行中时流过空气通道的空气流。

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