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31. 发明授权

US06495381B2 Apparatus and method for forming aperture of vertical cavity surface emitting laser by selective oxidation 失效
标题翻译：通过选择性氧化形成垂直腔表面发射激光的孔径的装置和方法
公开(公告)号：US06495381B2
公开(公告)日：2002-12-17
申请号：US09751938
申请日：2001-01-02
申请人： Young-jin Song , Seung-ho Nam
发明人： Young-jin Song , Seung-ho Nam
IPC分类号： H01S308
CPC分类号： H01S5/18311 , H01S5/0042 , H01S5/0201
摘要： An apparatus and method for forming an aperture of a vertical cavity surface emitting laser (VCSEL) by selective oxidation, in which resonance peak variations during the formation of the aperture can be measured using an optical spectrum analyzer, so that the size of the aperture can be precisely adjusted. The aperture forming apparatus includes: a furnace having a first window and a second window for transmitting light, and a stage for supporting a wafer for the VCSEL with a pre-oxide layer where an aperture is to be formed; a light source placed outside the furnace, for emitting light through the first window onto the top of the wafer seated on the stage; and an optical spectrum analyzer for detecting the light intensity by receiving light reflecting from the top of the wafer for the VCSEL and passing through the second window.
摘要翻译：一种用于通过选择性氧化形成垂直腔表面发射激光器（VCSEL）的孔径的装置和方法，其中可以使用光谱分析仪测量在形成孔径期间的共振峰值变化，使得孔径尺寸精确调整。孔形成装置包括：具有用于透射光的第一窗口和第二窗口的炉，以及用于将VCSEL的晶片支撑在其上将形成孔的预氧化物层的台; 位于炉外的光源，用于通过第一窗口将光发射到位于台架上的晶片的顶部; 以及光谱分析器，用于通过接收从用于VCSEL的晶片顶部反射并穿过第二窗口的光来检测光强度。

32. 发明授权

US08053855B2 CMOS image sensor for photosensitivity and brightness ratio 有权
标题翻译： CMOS图像传感器，用于光敏度和亮度比
公开(公告)号：US08053855B2
公开(公告)日：2011-11-08
申请号：US11129435
申请日：2005-05-16
申请人： Seung-ho Nam , Jin-hwan Kim , Gee-young Sung
发明人： Seung-ho Nam , Jin-hwan Kim , Gee-young Sung
IPC分类号： H01L31/0232
CPC分类号： H01L27/14623 , H01L27/14627 , H01L27/14643 , H01L27/148
摘要： A CMOS image sensor for improving light sensitivity and peripheral brightness ratio, and a method for fabricating the same. The CMOS image sensor includes a substrate on which a light sensor and device isolating insulation films are formed, in which the top of the substrate is coated with a plurality of metal layers and oxide films; a plurality of reflective layers formed inside the metal layers, each being spaced apart; a color filter embedded in a groove formed by etching the oxide films inside the reflective layers by a predetermined thickness; a plurality of protrusions formed on both sides of the top of the color filter, each arranged at a predetermined distance from one another; a flat layer formed on the top of the protrusions and the oxide films; and a micro-lens formed on the top of the flat layer. The reflective layer disposed at the top of the photodiode is made of a material having a high reflectance and low absorptivity. Therefore, light incident on the virtual focus plane on the top portion of the reflective layer converges on the photodiode, and thus, the light sensitivity of the sensor is greatly improved.
摘要翻译：一种用于提高光敏度和外围亮度比的CMOS图像传感器及其制造方法。 CMOS图像传感器包括其上形成有光传感器和器件隔离绝缘膜的衬底，其中衬底的顶部涂覆有多个金属层和氧化物膜; 形成在所述金属层内的多个反射层，各反射层间隔开; 嵌入在通过在反射层内蚀刻预定厚度的氧化膜形成的凹槽中的滤色器; 多个突起，形成在滤色器的顶部的两侧，每个突起彼此以预定距离布置; 在突起的顶部和氧化物膜上形成的平坦层; 以及形成在平坦层顶部的微透镜。设置在光电二极管顶部的反射层由具有高反射率和低吸收率的材料制成。因此，入射到反射层顶部的虚拟聚焦平面上的光会聚在光电二极管上，从而大大提高了传感器的光灵敏度。

33. 发明授权

US07382425B2 2D and 3D display device having a particular light control device 有权
标题翻译：具有特定光控制装置的2D和3D显示装置
公开(公告)号：US07382425B2
公开(公告)日：2008-06-03
申请号：US11746336
申请日：2007-05-09
申请人： Gee-young Sung , Byoung-so Choi , Seung-ho Nam
发明人： Gee-young Sung , Byoung-so Choi , Seung-ho Nam
IPC分类号： G02F1/1335
CPC分类号： H04N13/359 , H04N13/31
摘要： A display device that can selectively display 2D and 3D images is provided. The display device includes a backlight unit, a liquid crystal device, and a light control device including two polarizing plates interposed between the backlight and the liquid crystal device each of the polarizing plates having a polarized pattern, and one of the polarizing plates being moveable. Therefore, the display device can selectively display 2D and 3D images by moving one of the polarizing plates parallel to the other polarizing plate, and a width of a light valve can be controlled by the degree of non-alignment of the polarizing plates.
摘要翻译：提供了可以选择性地显示2D和3D图像的显示装置。该显示装置包括背光单元，液晶装置和光控制装置，其包括夹在背光源和液晶装置之间的两个偏振片，每个偏振片具有偏振图案，并且一个偏振片可移动。因此，显示装置可以通过使偏振片中的一个平行于另一个偏振片移动来选择性地显示2D和3D图像，并且可以通过偏振片的不对准程度来控制光阀的宽度。

34. 发明申请

US20050253212A1 CMOS image sensor for improving photosensitivity and brightness ratio and a method thereof 有权
标题翻译：用于提高光敏度和亮度比的CMOS图像传感器及其方法
公开(公告)号：US20050253212A1
公开(公告)日：2005-11-17
申请号：US11129435
申请日：2005-05-16
申请人： Seung-ho Nam , Jin-hwan Kim , Gee-young Sung
发明人： Seung-ho Nam , Jin-hwan Kim , Gee-young Sung
IPC分类号： H01L27/14 , H01L27/146 , H01L27/148 , H01L31/0216 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/374 , H01L31/062
CPC分类号： H01L27/14623 , H01L27/14627 , H01L27/14643 , H01L27/148
摘要： A CMOS image sensor for improving light sensitivity and peripheral brightness ratio, and a method for fabricating the same. The CMOS image sensor includes a substrate on which a light sensor and device isolating insulation films are formed, in which the top of the substrate is coated with a plurality of metal layers and oxide films; a plurality of reflective layers formed inside the metal layers, each being spaced apart; a color filter embedded in a groove formed by etching the oxide films inside the reflective layers by a predetermined thickness; a plurality of protrusions formed on both sides of the top of the color filter, each arranged at a predetermined distance from one another; a flat layer formed on the top of the protrusions and the oxide films; and a micro-lens formed on the top of the flat layer. The reflective layer disposed at the top of the photodiode is made of a material having a high reflectance and low absorptivity. Therefore, light incident on the virtual focus plane on the top portion of the reflective layer converges on the photodiode, and thus, the light sensitivity of the sensor is greatly improved.
摘要翻译：一种用于提高光敏度和外围亮度比的CMOS图像传感器及其制造方法。 CMOS图像传感器包括其上形成有光传感器和器件隔离绝缘膜的衬底，其中衬底的顶部涂覆有多个金属层和氧化物膜; 形成在所述金属层内的多个反射层，各反射层间隔开; 嵌入在通过在反射层内蚀刻预定厚度的氧化膜形成的凹槽中的滤色器; 多个突起，形成在滤色器的顶部的两侧，每个突起彼此以预定距离布置; 在突起的顶部和氧化物膜上形成的平坦层; 以及形成在平坦层顶部的微透镜。设置在光电二极管顶部的反射层由具有高反射率和低吸收率的材料制成。因此，入射到反射层顶部的虚拟聚焦平面上的光会聚在光电二极管上，从而大大提高了传感器的光灵敏度。

35. 发明授权

US06930330B2 Silicon optoelectronic device and light emitting apparatus using the same 有权
标题翻译：硅光电子器件和使用其的发光装置
公开(公告)号：US06930330B2
公开(公告)日：2005-08-16
申请号：US10122421
申请日：2002-04-16
申请人： Byoung-lyong Choi , Seung-ho Nam , Eun-kyung Lee , Jae-ho You , Jun-young Kim
发明人： Byoung-lyong Choi , Seung-ho Nam , Eun-kyung Lee , Jae-ho You , Jun-young Kim
IPC分类号： H01L33/24 , H01L31/10 , H01L33/06 , H01L33/34 , H01L33/00
CPC分类号： H01L33/34 , B82Y10/00 , H01L31/0232 , H01L31/035281
摘要： A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on an n-type or p-type silicon; a doped region formed on one surface of the substrate and doped to an ultra-shallow depth with a predetermined dopant to be an opposite type from that of the substrate to provide a photoelectrical conversion effect by quantum confinement in a p-n junction between the doped region and the substrate; and first and second electrodes formed on the substrate to be electrically connected to the doped region. The silicon optoelectronic device may further include a control layer formed on one surface of the substrate to act as a mask in forming the doped region and to limit the depth of the doped region to be ultra-shallow. The silicon optoelectronic device has excellent efficiency and can be used as either a light-emitting device or a light-receiving device. Since the optoelectronic device uses silicon as a base material, it can be manufactured at low cost.
摘要翻译：提供硅光电子器件和使用硅光电子器件的发光设备。硅光电子器件包括：基于n型或p型硅的衬底; 掺杂区域形成在衬底的一个表面上并掺杂到具有预定掺杂剂的超浅深度以与衬底相反的类型，以通过量子限制在掺杂区域和掺杂区域之间的pn结中提供光电转换效应基材; 以及形成在所述基板上以电连接到所述掺杂区域的第一和第二电极。硅光电子器件还可以包括形成在衬底的一个表面上的控制层，以在形成掺杂区域中用作掩模，并且将掺杂区域的深度限制为超浅。硅光电子器件具有优异的效率，可用作发光器件或光接收器件。由于光电器件使用硅作为基材，所以可以以低成本制造。

36. 发明授权

US6026763A Thin-film deposition apparatus using cathodic arc discharge 失效
标题翻译：使用阴极电弧放电的薄膜沉积装置
公开(公告)号：US6026763A
公开(公告)日：2000-02-22
申请号：US979115
申请日：1997-11-26
申请人： Jong-kuk Kim , Seung-ho Nam , Byong-lyong Choi
发明人： Jong-kuk Kim , Seung-ho Nam , Byong-lyong Choi
IPC分类号： C23C14/34 , C23C14/32 , H01J37/32 , H01L21/203 , C23C22/00
CPC分类号： H01J37/32055 , C23C14/325 , H01J37/32357 , H01J37/3266
摘要： A thin-film deposition apparatus includes an arc vaporization portion from which charged particles of a deposition material are generated by a cathodic arc discharge, a plasma duct having a bend and guiding the charged particles from the arc vaporization portion to a substrate, a magnetic field generator for generating magnetic fields to direct the charged particles from the arc vaporization portion to the substrate, and a reflective magnetic field source installed in a convex portion of the bend of the plasma duct, for generating magnetic fields that interfere with the magnetic fields formed by the magnetic field generator so that magnetic flux lines are distributed along the plasma duct.
摘要翻译：薄膜沉积设备包括电弧蒸发部分，通过阴极电弧放电从其中产生沉积材料的带电粒子，具有弯曲并将带电粒子从电弧蒸发部分引导到基底的等离子体管道，磁场发电机，用于产生磁场以将带电粒子从电弧蒸发部分引导到衬底;以及反射型磁场源，安装在等离子体管道的弯曲部的凸部中，用于产生干扰由等离子体管道形成的磁场的磁场，磁场发生器使得磁通线沿着等离子体管道分布。

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