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31. 发明授权

US08404532B2 Transferred thin film transistor and method for manufacturing the same 有权
标题翻译：转移薄膜晶体管及其制造方法
公开(公告)号：US08404532B2
公开(公告)日：2013-03-26
申请号：US12782303
申请日：2010-05-18
申请人： Jae Bon Koo , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
发明人： Jae Bon Koo , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
IPC分类号： H01L21/336
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
摘要翻译：提供了一种转移的薄膜晶体管及其制造方法。该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

32. 发明申请

US20130005079A1 ORGANIC THIN FILM TRANSISTORS AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：有机薄膜晶体管及其形成方法
公开(公告)号：US20130005079A1
公开(公告)日：2013-01-03
申请号：US13616668
申请日：2012-09-14
申请人： Yong-Young NOH , In-Kyu You , Jae Bon Koo
发明人： Yong-Young NOH , In-Kyu You , Jae Bon Koo
IPC分类号： H01L51/40
CPC分类号： H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： Provided is an organic thin film transistor, method of forming the same, and a memory device employing the same. The organic thin film transistor includes a substrate, a source electrode and a drain electrode on the substrate, an active layer on the substrate between the source electrode and the drain electrode, a gate electrode controlling the active layer, and an organic dielectric layer between the active layer and the gate electrode. The organic dielectric layer includes nanoparticles, a hydrophilic polymer surrounding the nanoparticles, and a hydrophobic polymer.
摘要翻译：提供了一种有机薄膜晶体管，其形成方法和使用其的存储器件。有机薄膜晶体管包括在基板上的基板，源电极和漏电极，源电极和漏电极之间的基板上的有源层，控制有源层的栅极电极和位于有源层和栅电极。有机介电层包括纳米颗粒，围绕纳米颗粒的亲水性聚合物和疏水聚合物。

33. 发明授权

US08119463B2 Method of manufacturing thin film transistor and thin film transistor substrate 有权
标题翻译：制造薄膜晶体管和薄膜晶体管基板的方法
公开(公告)号：US08119463B2
公开(公告)日：2012-02-21
申请号：US12507725
申请日：2009-07-22
申请人： Jae Bon Koo , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
发明人： Jae Bon Koo , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78603 , H01L27/1266 , H01L29/66757 , H01L29/78618
摘要： Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.
摘要翻译：提供了一种可以改善自对准的薄膜晶体管的制造方法。在该方法中，在第一衬底上的牺牲层上形成包括第一掺杂区域，第二掺杂区域和沟道区域的半导体层。接下来，半导体层与第一衬底分离，然后耦合在第二衬底上。接下来，在第二基板和半导体层上形成电介质层，在电介质层上形成第一光致抗蚀剂层。此后，通过使用第一掺杂区域和第二掺杂区域作为掩模，将第一光致抗蚀剂层从第二基板的后表面曝光，以形成第一掩模图案。接下来，通过使用第一掩模图案作为掩模在介电层上形成与沟道区重叠的栅电极，分别形成连接到第一掺杂区和第二掺杂区的源电极和漏极，以完成薄膜晶体管。

34. 发明授权

US07995023B2 Flat panel display and method for driving the same 有权
标题翻译：平板显示器及其驱动方法
公开(公告)号：US07995023B2
公开(公告)日：2011-08-09
申请号：US11478169
申请日：2006-06-28
申请人： Jae Kyeong Jeong , Jae Bon Koo , Hyun Soo Shin , Se Yeoul Kwon , Yeon Gon Mo , Keum Nam Kim
发明人： Jae Kyeong Jeong , Jae Bon Koo , Hyun Soo Shin , Se Yeoul Kwon , Yeon Gon Mo , Keum Nam Kim
IPC分类号： G09G3/38
CPC分类号： G02F1/13458 , G02F1/13452 , G02F1/1362 , G02F1/136286 , G02F1/1368 , H01L27/3276 , H01L29/78648 , H01L51/52
摘要： A flat panel display and method for driving the same. The flat panel display includes a conductive substrate forming an image display unit having at least one thin film transistor and a pad unit including a plurality of terminals, wherein the conductive substrate is laminated with a plurality of insulating layers to form the image display unit and the pad unit; a substrate-exposing part for exposing the conductive substrate is formed by removing at least one area of the insulating layers formed on the pad unit; a system control panel for supplying a reverse bias voltage through the substrate-exposing part, wherein the system control panel is electrically connected with the pad unit; and a metal member for transferring the reverse bias voltage to the conductive substrate, wherein the metal member is formed between the substrate-exposing part and the system control panel.
摘要翻译：一种平板显示器及其驱动方法。平板显示器包括形成具有至少一个薄膜晶体管的图像显示单元的导电基板和包括多个端子的焊盘单元，其中导电基板层叠有多个绝缘层以形成图像显示单元，并且垫单位通过去除在衬垫单元上形成的绝缘层的至少一个区域来形成用于暴露导电衬底的衬底暴露部分; 用于通过所述衬底暴露部分提供反向偏置电压的系统控制面板，其中所述系统控制面板与所述衬垫单元电连接; 以及用于将所述反向偏置电压传送到所述导电基板的金属构件，其中所述金属构件形成在所述基板曝光部和所述系统控制面板之间。

35. 发明申请

US20110018061A1 COMPOSITION FOR ORGANIC DIELECTRIC AND ORGANIC THIN FILM TRANSISTOR FORMED USING THE SAME 有权
标题翻译：用于形成有机电介质和有机薄膜晶体管的组合物
公开(公告)号：US20110018061A1
公开(公告)日：2011-01-27
申请号：US12769316
申请日：2010-04-28
申请人： Yong-Young NOH , In-Kyu You , Jae Bon Koo , Soon Won Jung
发明人： Yong-Young NOH , In-Kyu You , Jae Bon Koo , Soon Won Jung
IPC分类号： H01L29/786 , C08F222/40
CPC分类号： H01L51/052 , C08F220/14 , C08F222/40 , C08F2220/1891 , C08K5/0025 , C08K5/3415 , C08L33/10 , H01L51/0541 , H01L51/0545 , C08F220/30
摘要： Provided is a composition for an organic dielectric and an organic thin film transistor including an organic dielectric thereby formed. The composition for an organic dielectric includes a compound represented by the following Formula, wherein R1 is any one of hydrogen, hydroxyl group, ester group, amide group, or alkyl group or alkoxy group of a carbon number of 1 to 12, R2 includes any one selected from electrolytic functional groups, each of a and b is a positive integer, and the ratio of b to a (b/a) is larger than 0 and smaller than 99.
摘要翻译：提供了一种有机电介质的组合物和包括由此形成的有机电介质的有机薄膜晶体管。作为有机电介质的组合物，可列举下式所示的化合物，其中，R 1为氢，羟基，酯基，酰胺基，碳原子数1〜12的烷基或烷氧基中的任一个，一个选自电解官能团，a和b各自为正整数，b与a（b / a）的比例大于0且小于99。

36. 发明申请

US20100140596A1 ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20100140596A1
公开(公告)日：2010-06-10
申请号：US12498910
申请日：2009-07-07
申请人： Yong-Young Noh , Seok-Ju Kang , Jae Bon Koo , In-Kyu You , Kang-Jun Baeg
发明人： Yong-Young Noh , Seok-Ju Kang , Jae Bon Koo , In-Kyu You , Kang-Jun Baeg
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/052 , H01L51/0541 , H01L51/0545
摘要： Provided is an organic thin film transistor and method of forming the same. The organic thin film transistor can decrease threshold voltage and driving voltage by forming a thin organic dielectric layer in a lamella structure using a diblock copolymer including a hydrophilic polymer with high permittivity and a hydrophobic polymer with low permittivity together. Also, the method can simplify the manufacturing process by forming an organic dielectric layer including polymers having two different physical properties through one spin coating.
摘要翻译：提供一种有机薄膜晶体管及其形成方法。有机薄膜晶体管可以通过使用包含具有高介电常数的亲水性聚合物的二嵌段共聚物和具有低介电常数的疏水性聚合物在一起的层状结构中形成薄的有机介电层来降低阈值电压和驱动电压。此外，该方法可以通过一种旋涂形成包含具有两种不同物理性质的聚合物的有机介电层来简化制造过程。

37. 发明授权

US07727823B2 Flat panel display and method for driving the same 有权
标题翻译：平板显示器及其驱动方法
公开(公告)号：US07727823B2
公开(公告)日：2010-06-01
申请号：US11477101
申请日：2006-06-27
申请人： Jae Kyeong Jeong , Jae Bon Koo , Hyun Soo Shin , Se Yeoul Kwon , Yeon Gon Mo , Keum Nam Kim
发明人： Jae Kyeong Jeong , Jae Bon Koo , Hyun Soo Shin , Se Yeoul Kwon , Yeon Gon Mo , Keum Nam Kim
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78603 , H01L27/12 , H01L27/1214 , H01L27/1218 , H01L29/78606 , H01L29/78648
摘要： A flat panel display for preventing a thin film transistor from deteriorating due to voltage, static electricity, and external force, accidentally applied to a substrate, and a method for driving the same. The flat panel display includes a conductive substrate, at least one insulating layer formed on the conductive substrate, at least one thin film transistor formed on the conductive substrate, and a ground formed in a region of the conductive substrate to ground the conductive substrate. Thus, the deterioration of the thin film transistor that would be generated by voltage, static electricity, or external force, accidentally applied to the conductive substrate can be substantially prevented and the performance of the display is enhanced.
摘要翻译：用于防止薄膜晶体管由于电压，静电和外力而意外施加到基板的劣化的平板显示器及其驱动方法。平板显示器包括导电基板，形成在导电基板上的至少一个绝缘层，形成在导电基板上的至少一个薄膜晶体管，以及形成在导电基板的区域中的接地导电基板的接地。因此，可以基本上防止意外地施加到导电基板上的由电压，静电或外力产生的薄膜晶体管的劣化，从而提高显示器的性能。

38. 发明申请

US20100035376A1 METHOD OF LOCALLY CRYSTALLIZING ORGANIC THIN FILM AND METHOD OF FABRICATING ORGANIC THIN FILM TRANSISTOR USING THE SAME 审中-公开
标题翻译：有机薄膜的局部结晶方法及使用其制造有机薄膜晶体管的方法
公开(公告)号：US20100035376A1
公开(公告)日：2010-02-11
申请号：US12424760
申请日：2009-04-16
申请人： Yong Young Noh , Kang Jun Baeg , In Kyu You , Jae Bon Koo
发明人： Yong Young Noh , Kang Jun Baeg , In Kyu You , Jae Bon Koo
IPC分类号： H01L51/40
CPC分类号： H01L51/0004 , H01L51/0027 , H01L51/0036 , H01L51/0545 , H01L51/0558
摘要： A method of partially crystallizing an organic thin film and a method of fabricating an organic thin film transistor (OTFT) are provided. An organic thin film used as an active layer of an OTFT is partially coated with an organic solvent by direct graphic art printing or partially annealed by laser beam irradiation, thereby local improving the crystallinity of the organic thin film. The charge mobility of the OTFT can be improved and crosstalk between devices can be reduced without additional patterning the organic thin film.
摘要翻译：提供部分结晶有机薄膜的方法和制造有机薄膜晶体管（OTFT）的方法。用作OTFT的有源层的有机薄膜通过直接图形化印刷部分地涂覆有机溶剂，或者通过激光束照射部分地进行退火，从而局部改善有机薄膜的结晶度。可以改善OTFT的电荷迁移率，并且可以减少器件之间的串扰，而无需额外构图有机薄膜。

39. 发明授权

US07321135B2 Flat panel display 有权
标题翻译：平板显示器
公开(公告)号：US07321135B2
公开(公告)日：2008-01-22
申请号：US11023658
申请日：2004-12-29
申请人： Sang-Il Park , Jae Bon Koo
发明人： Sang-Il Park , Jae Bon Koo
IPC分类号： G09G5/00
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1251 , H01L27/3244 , H01L29/78618 , H01L29/78645 , H01L29/78696
摘要： The claimed invention is directed to a flat panel display having R, G, and B unit pixels. At least one of the R, G, and B unit pixels includes at least two or more transistors, each having source and drain regions. At least one drain region in the source/drain regions of at least one transistor in the transistors has a resistance value different from a resistance value of at least a drain region of the other transistor. The difference in resistance values may be accomplished by doping each drain region with a different concentration of dopant or by shaping each drain region differently.
摘要翻译：所要求保护的发明涉及具有R，G和B单位像素的平板显示器。 R，G和B单元像素中的至少一个包括至少两个或更多个晶体管，每个具有源极和漏极区域。晶体管中的至少一个晶体管的源极/漏极区域中的至少一个漏极区域具有与至少另一个晶体管的漏极区域的电阻值不同的电阻值。电阻值的差异可以通过用不同浓度的掺杂剂掺杂每个漏极区域或者不同地对每个漏极区域进行整形来实现。

40. 发明授权

US07180236B2 Flat panel display and fabrication method thereof 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US07180236B2
公开(公告)日：2007-02-20
申请号：US10694941
申请日：2003-10-29
申请人： Jae Bon Koo , Sang-Il Park
发明人： Jae Bon Koo , Sang-Il Park
IPC分类号： H05B33/00
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/02672 , H01L27/1229 , H01L27/1277 , H01L27/3262 , H01L29/04
摘要： A flat panel display with a plurality of pixels. Each pixel has at least a first transistor and a second transistor and a semiconductor layer of the first transistor has a mobility which is different from a semiconductor layer of the second transistor.A method for fabricating a flat panel display including at least a first transistor and a second transistor by forming an amorphous silicon film on an insulating substrate and crystallizing the amorphous silicon film into a polysilicon film that is divided into at least a first region having a first mobility and a second region having a second mobility. The method further involves forming a semiconductor layer for the first transistor from the region with the first mobility and the second transistor from the region with the second mobility by patterning the polysilicon film, where the first mobility is different from the second mobility.
摘要翻译：具有多个像素的平板显示器。每个像素具有至少第一晶体管和第二晶体管，并且第一晶体管的半导体层具有不同于第二晶体管的半导体层的迁移率。一种用于制造平板显示器的方法，所述平板显示器至少包括第一晶体管和第二晶体管，通过在绝缘基板上形成非晶硅膜并将所述非晶硅膜结晶成多晶硅膜，所述多晶硅膜被划分为至少第一区域，所述第一区域具有第一移动性和具有第二移动性的第二区域。该方法还包括通过对第一迁移率不同于第二迁移率的多晶硅膜进行构图而从具有第二迁移率的区域形成具有第一迁移率的区域的第一晶体管的半导体层和第二晶体管。

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