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31. 发明授权

US07821803B2 Memory module having star-type topology and method of fabricating the same 有权
标题翻译：具有星型拓扑的存储器模块及其制造方法
公开(公告)号：US07821803B2
公开(公告)日：2010-10-26
申请号：US12221728
申请日：2008-08-06
申请人： Do-Hyung Kim , Byoung-Ha Oh , Young-Jun Park , Yong-Ho Ko
发明人： Do-Hyung Kim , Byoung-Ha Oh , Young-Jun Park , Yong-Ho Ko
IPC分类号： G11C5/02
CPC分类号： G11C5/04 , G11C5/025 , Y10T29/49002
摘要： A memory module having a start-type topology and a method of fabricating the same are provided. The memory module includes a substrate. Memory devices are mounted on the substrate in at least two rows and at least two columns. A star-type topology is disposed to be electrically connected to the memory devices. One or more pairs of adjacent ones of the memory devices have a point-symmetric structure.
摘要翻译：提供具有起动型拓扑的存储器模块及其制造方法。存储器模块包括衬底。存储器件以至少两行和至少两列安装在衬底上。星型拓扑被布置成电连接到存储器件。一对或多对相邻的存储器件具有点对称结构。

32. 发明申请

US20090041250A1 Authentication method in communication system 有权
标题翻译：通信系统中的认证方式
公开(公告)号：US20090041250A1
公开(公告)日：2009-02-12
申请号：US12221866
申请日：2008-08-07
申请人： Young-Jun Park , Min-Young Ahn , Kug Shin , Kwang-Jo Kim , Kyu-Suk Han
发明人： Young-Jun Park , Min-Young Ahn , Kug Shin , Kwang-Jo Kim , Kyu-Suk Han
IPC分类号： H04L9/14 , H04M1/66
CPC分类号： H04L9/3297 , G06F21/445 , H04L9/3271 , H04L63/062 , H04W12/04 , H04W12/06
摘要： An authentication method is provided in which a first portable device generates and transmits a first random number and a first timestamp to a first USIM in the first portable device; the first USIM calculates a first sign for the first portable device; the first portable device requests authentication for authenticated communication from a second portable device through transmission of the first random number, the first timestamp, and the first sign to the second portable device; the second portable device generates a second random number and a second timestamp and transmits the information to a second USIM in the second portable device; the second USIM generates a second sign for the second portable device and a second personal key which the second portable device transmits to the first portable device; the first portable device then transmits the information to the first USIM which generates a first personal key for authenticated communication.
摘要翻译：提供了一种认证方法，其中第一便携式设备在第一便携式设备中生成并向第一USIM发送第一随机数和第一时间戳; 第一USIM计算第一便携式设备的第一符号; 第一便携式设备通过将第一随机数，第一时间戳和第一符号发送到第二便携式设备来请求来自第二便携式设备的认证通信的认证; 第二便携式设备生成第二随机数和第二时间戳，并将该信息发送到第二便携式设备中的第二USIM; 第二USIM生成用于第二便携式设备的第二符号和第二便携式设备向第一便携式设备发送的第二个人密钥; 第一便携式设备然后将信息发送到生成用于认证通信的第一个人密钥的第一USIM。

33. 发明授权

US07489070B2 Field emission device and field emission display using the same having a concave-shaped cathode to enhance electron focusing 失效
标题翻译：使用具有凹形阴极的场发射器件和场发射显示器来增强电子聚焦
公开(公告)号：US07489070B2
公开(公告)日：2009-02-10
申请号：US11194559
申请日：2005-08-02
申请人： Young-Jun Park , Tae-Won Jeong
发明人： Young-Jun Park , Tae-Won Jeong
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J3/021 , H01J29/467 , H01J29/481 , H01J31/127
摘要： A field emission device and a field emission display using the same. The field emission device includes a concave cathode electrode and an emitter formed at a center thereof. A gate electrode and a focusing gate electrode above the gate electrode serve to focus and refocus the electron beam emanating from the emitter to produce a better focused electron beam leading to improved color purity.
摘要翻译：场发射器件和使用其的场致发射显示器。场发射器件包括形成在其中心处的凹阴极电极和发射极。栅电极上方的栅电极和聚焦栅极用于聚焦和重新聚焦从发射极发射的电子束，以产生更好的聚焦电子束，从而提高色纯度。

34. 发明申请

US20080286603A1 Steel Sheet for Hot Press Forming Having Excellent Heat Treatment and Impact Property, Hot Press Parts Made of It and the Method for Manufacturing Thereof 审中-公开
标题翻译：具有优异热处理和冲击性能的热压成型钢板，由其制成的热压件及其制造方法
公开(公告)号：US20080286603A1
公开(公告)日：2008-11-20
申请号：US12092342
申请日：2006-12-01
申请人： Jin-Keun Oh , Dae-Chul Bae , Seong-Ju Kim , Kwang-Geun Chin , Jae-Ryung Lee , Young-Jun Park
发明人： Jin-Keun Oh , Dae-Chul Bae , Seong-Ju Kim , Kwang-Geun Chin , Jae-Ryung Lee , Young-Jun Park
IPC分类号： B32B15/18 , C23C2/02 , C21D6/04 , C23C2/26 , C21D8/00
CPC分类号： C22C38/02 , C22C38/001 , C22C38/04 , C22C38/06 , Y10T428/12 , Y10T428/12972
摘要： Disclosed is a steel sheet that exhibits an ultra-high strength after hot press forming followed by rapid cooling, and an enhanced yield strength after painting. The steel sheet has a composition comprising 0.1% to 0.5% by weight of C, 0.01% to 1.0% by weight of Si, 0.5% to 4.0% by weight of Mn, 0.1% by weight or less of P, 0.03% by weight or less of S, 0.1% by weight of soluble Al, 0.01% to 0.1% by weight of N, 0.3% by weight or less of W, and the balance Fe and other inevitable impurities. Further disclosed are a hot-pressed part made of the steel sheet and a method for manufacturing the hot-pressed part. The hot-pressed part achieves a high increment in yield strength after heat treatment for painting while ensuring an ultra-high tensile strength. Furthermore, the hot-pressed part exhibits superior adhesion to a coating layer, good surface appearance and improved corrosion resistance after painting.
摘要翻译：公开了一种在热压成型后快速冷却时具有超高强度的钢板，涂装后的屈服强度提高。该钢板具有0.1〜0.5重量％的C，0.01〜1.0重量％的Si，0.5〜4.0重量％的Mn，0.1重量％以下的P，0.03重量％或更少的S，0.1重量％的可溶性Al，0.01〜0.1重量％的N，0.3重量％以下的W，余量为Fe等不可避免的杂质。进一步公开的是由钢板制成的热压部件和制造热压部件的方法。热压部件在确保超高抗拉强度的同时，在涂装热处理后的屈服强度增加很大。此外，热压部分对涂层表现出优异的粘附性，良好的表面外观和改善的涂漆后的耐腐蚀性。

35. 发明授权

US07054201B2 Driving circuit for non-volatile DRAM 有权
标题翻译：用于非易失性DRAM的驱动电路
公开(公告)号：US07054201B2
公开(公告)日：2006-05-30
申请号：US10883151
申请日：2004-06-30
申请人： Jin-Hong Ahn , Sang-Hoon Hong , Sang-Don Lee , Yil-Wook Kim , Young-Jun Park
发明人： Jin-Hong Ahn , Sang-Hoon Hong , Sang-Don Lee , Yil-Wook Kim , Young-Jun Park
IPC分类号： G11C16/04
CPC分类号： G11C14/00 , G11C11/404 , G11C14/0018 , G11C16/30 , H01L27/105 , H01L27/115
摘要： A driving circuit for use in a non-volatile dynamic random access memory (NVDRAM) having a nonconductor which can trap electrons or holes includes an internal supply voltage generator for generating the plurality of internal supply voltages, each having at least two different voltage levels; a mode controller for determining an operation mode of the NVDRAM; a voltage level selector for selecting one voltage level of each internal supply voltage in response to the operation mode to thereby outputs the selected voltage level of each internal supply voltage to the row decoding block and the core area; a row decoding block for receiving the internal supply voltages and outputting the internal supply voltages in response to an inputted address; and a core area having a plurality of unit cells, each storing a data, for accessing the data in response to inputted voltage levels of the plurality of internal supply voltages.
摘要翻译：用于具有捕获电子或空穴的非导体的非易失性动态随机存取存储器（NVDRAM）中的驱动电路包括用于产生多个内部电源电压的内部电源电压发生器，每个具有至少两个不同的电压电平; 用于确定NVDRAM的操作模式的模式控制器; 电压电平选择器，用于响应于操作模式选择每个内部电源电压的一个电压电平，从而将每个内部电源电压的选定电压电平输出到行解码块和核心区域; 行解码块，用于接收内部电源电压并响应输入的地址输出内部电源电压; 以及具有多个单位单元的核心区域，每个单位单元存储数据，用于响应于所述多个内部电源电压的输入电压电平来访问数据。

36. 发明授权

US06780663B2 Method of forming floating structure of substrate and method of manufacturing floating structure gate electrode and field emission device employing the floating structure 失效
标题翻译：形成衬底浮动结构的方法和制造浮动结构栅电极的方法和采用浮动结构的场致发射器件
公开(公告)号：US06780663B2
公开(公告)日：2004-08-24
申请号：US10238780
申请日：2002-09-11
申请人： Young-Jun Park , In-Taek Han
发明人： Young-Jun Park , In-Taek Han
IPC分类号： H01L2100
CPC分类号： B82Y10/00 , H01J3/021 , H01J9/025 , H01J2201/30469
摘要： A method of forming a floating structure lifting up from a substrate and a method of manufacturing a field emission device (FED) employing the floating structure are provided. The method of forming a floating structure includes forming an expansion causer layer, which can generate a byproduct from the reacting with a predetermined reactant gas causing volume expansion, on the substrate; forming an object material layer for the floating structure on a resultant stack; forming a hole through which the reactant gas is supplied on a resultant stack; supplying the reactant gas through the hole so that the object material layer partially lifts up from the substrate due to the byproduct generated from the reaction of the expansion causer layer with the reactant gas; and removing the byproduct through the hole so that the portion of the object material layer lifting up from the substrate can be completely separated from the substrate to form the floating structure.
摘要翻译：提供了形成从衬底提升的浮动结构的方法以及制造采用浮动结构的场发射器件（FED）的方法。形成浮动结构的方法包括：形成扩张引纬层，其可以在与基板上引起体积膨胀的预定反应物气体反应产生副产物; 在所得到的堆叠上形成用于浮动结构的物体层; 在所得的堆叠上形成反应气体供应的孔; 通过孔提供反应气体，使得由于膨胀型用户层与反应气体的反应产生的副产物，物料层部分地从基板升起; 并且通过该孔去除副产物，使得从衬底提起的目标材料层的部分可以与衬底完全分离以形成浮动结构。

37. 发明授权

US06316618B1 Process for preparing (-)pyridobenzoxazine carboxylic acid derivatives 有权
标题翻译：制备（ - ）吡啶并苯并恶嗪羧酸衍生物的方法
公开(公告)号：US06316618B1
公开(公告)日：2001-11-13
申请号：US09674323
申请日：2000-10-24
申请人： Young-Jun Park , Ho-Seong Lee , Min-Hwan Kim , Kyung-Chul Kim
发明人： Young-Jun Park , Ho-Seong Lee , Min-Hwan Kim , Kyung-Chul Kim
IPC分类号： C07D49806
CPC分类号： C07D215/56
摘要： Disclosed is a process for preparing optically active (−)pyridobenzoxazine carboxylic acid derivative and pharmaceutically acceptable salt thereof by employing a starting material of (+)ethyl 2-(4-chloro-5-fluoro-2-halo-3-nitobenzoyl)-3-[(1-hydroxypropy-2(s)-yl)amino]acrylate. According to the present invention, optically active (−)pyridobenzoxazine carboxylic acid derivative can be manufactured from low-priced 4-chloro-5-fluorobenzoic acid derivative in a simple and economical manner.
摘要翻译：公开了通过使用（+）2-（4-氯-5-氟-2-卤-3-硝基苯甲酰基） - 苯并恶唑衍生物的起始原料制备光学活性（ - ）吡啶并苯并恶嗪羧酸衍生物及其药学上可接受的盐的方法， 3 - [（1-羟丙基-2（s） - 基）氨基]丙烯酸酯。根据本发明，光学活性（ - ）吡啶并苯并恶嗪羧酸衍生物可以以简单经济的方式从低价格的4-氯-5-氟苯甲酸衍生物制备。

38. 发明授权

US08953243B2 Anti-reflection structure using surface plasmon and high-K dielectric material and method of manufacturing the anti-reflection structure 有权
标题翻译：使用表面等离子体和高K介电材料的防反射结构及其制造方法
公开(公告)号：US08953243B2
公开(公告)日：2015-02-10
申请号：US13064290
申请日：2011-03-16
申请人： Young-Jun Park , Jong-min Kim , Huamin Li , Won-Jong Yoo
发明人： Young-Jun Park , Jong-min Kim , Huamin Li , Won-Jong Yoo
IPC分类号： G02B1/10 , G02B5/00 , B82Y30/00 , G02B1/11
CPC分类号： G02B5/008 , B82Y30/00 , G02B1/11
摘要： An anti-reflection structure using surface plasmons and a high-k dielectric material, and a method of manufacturing the anti-reflection structure. The anti-reflection structure may include a high-k dielectric layer formed on a substrate, the high-k dielectric layer configured to allow incident light to pass therethrough, and a nano-material layer on the high-k dielectric layer. The high-k dielectric layer may include at least one of zirconium oxide (ZrO2), hafnium oxide (HfO2), titanium oxide (TiO2), tantalum oxide (Ta2O5), lanthanum oxide (La2O3), yttrium oxide (Y2O3) and aluminum oxide (Al2O3).
摘要翻译：使用表面等离子体激元和高k介电材料的抗反射结构，以及制造抗反射结构的方法。抗反射结构可以包括形成在基板上的高k电介质层，配置成允许入射光通过的高k电介质层，以及在高k电介质层上的纳米材料层。高k电介质层可以包括氧化锆（ZrO 2），氧化铪（HfO 2），氧化钛（TiO 2），氧化钽（Ta 2 O 5），氧化镧（La 2 O 3），氧化钇（Y 2 O 3）和氧化铝（Al2O3）。

39. 发明申请

US20140124028A1 SOLAR CELL SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND SOLAR CELL USING SAME 审中-公开
标题翻译：太阳能电池基板，其制造方法和使用该太阳能电池的太阳能电池
公开(公告)号：US20140124028A1
公开(公告)日：2014-05-08
申请号：US14124867
申请日：2012-06-08
申请人： Kyoung-Bo Kim , Young-Jun Park , Je-Hoon Baek , Jong-Sang Kim , Young-Geun Kim
发明人： Kyoung-Bo Kim , Young-Jun Park , Je-Hoon Baek , Jong-Sang Kim , Young-Geun Kim
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/03928 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： One aspect of the present invention is a solar cell substrate, comprising: a lower substrate; and a lower electrode that is formed on the upper part of said lower substrate, wherein a metal diffusion-preventing film having at least one or two or more metal layers is included between said lower substrate and said lower electrode, and if two or more metal layers are formed, the metal layers adjoining each other can be different metals. Additionally, a solar cell, which is another aspect of the present invention, comprises: a lower substrate; and a lower electrode that is formed on the upper part of said lower substrate, wherein a metal diffusion-preventing film having at least one or two or more metal layers is included between said lower substrate and said lower electrode, and if two or more metal layers are formed, the metal layers adjoining each other comprise solar cell substrates which are of different metals; p-type light absorption layers formed on said solar cell substrates; n-type buffer layers formed on said light absorption layers; transparent windows formed on said buffer layers; and upper electrodes formed on said transparent windows.
摘要翻译：本发明的一个方面是太阳能电池基板，包括：下基板; 以及形成在所述下基板的上部的下电极，其中在所述下基板和所述下电极之间包括具有至少一个或两个或更多个金属层的金属防扩散膜，并且如果两个或更多个金属形成层，彼此相邻的金属层可以是不同的金属。此外，作为本发明的另一方面的太阳能电池包括：下基板; 以及形成在所述下基板的上部的下电极，其中在所述下基板和所述下电极之间包括具有至少一个或两个或更多个金属层的金属防扩散膜，并且如果两个或更多个金属形成层，彼此相邻的金属层包括具有不同金属的太阳能电池基板; 形成在所述太阳能电池基板上的p型光吸收层; 形成在所述光吸收层上的n型缓冲层; 形成在所述缓冲层上的透明窗; 和形成在所述透明窗口上的上电极。

40. 发明授权

US08670424B2 Method and apparatus for detecting whether cell coverage is downscaled in wireless communication system 失效
标题翻译：用于检测无线通信系统中小区覆盖是否缩减的方法和装置
公开(公告)号：US08670424B2
公开(公告)日：2014-03-11
申请号：US13009106
申请日：2011-01-19
申请人： Young-Jun Park , Mi-Sun Do , Ki-Young Han , Sang-Hoon Oh
发明人： Young-Jun Park , Mi-Sun Do , Ki-Young Han , Sang-Hoon Oh
IPC分类号： H04Q7/24
CPC分类号： H04W24/00
摘要： A wireless communication system includes an apparatus capable of detecting whether a cell coverage is downscaled. The wireless communication system receives information used for communication between an evolved NodeB (eNodeB) and a User Equipment (UE) from the eNodeB. The UE performs at least one of pilot signal power checking for checking if a pilot signal power falls within a first reference range, DownLink (DL) Signal-to-Interference plus Noise Ratio (SINR) checking for checking if an SINR of a DL traffic channel falls within a second reference range, and UpLink (UL) SINR checking for checking if an SINR of an UL traffic channel falls within a third reference range using the received information. The UE also detects whether a cell coverage of a cell to which the eNodeB and the UE belongs is downscaled based on a checking result.
摘要翻译：无线通信系统包括能够检测小区覆盖是否缩小的装置。无线通信系统从eNodeB接收用于演进的节点B（eNodeB）和用户设备（UE）之间的通信的信息。 UE执行导频信号功率检查中的至少一个，用于检查导频信号功率是否落在第一参考范围内，下行链路（DL）信号到干扰加噪声比（SINR）检查，用于检查DL业务的SINR 信道落入第二参考范围内，以及UpLink（UL）SINR检查，用于使用所接收的信息来检查UL业务信道的SINR是否在第三参考范围内。 UE还基于检查结果检测eNodeB和UE所属的小区的小区覆盖是否被缩小。

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