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    • 1. 发明申请
    • SOLAR CELL SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND SOLAR CELL USING SAME
    • 太阳能电池基板,其制造方法和使用该太阳能电池的太阳能电池
    • US20140124028A1
    • 2014-05-08
    • US14124867
    • 2012-06-08
    • Kyoung-Bo KimYoung-Jun ParkJe-Hoon BaekJong-Sang KimYoung-Geun Kim
    • Kyoung-Bo KimYoung-Jun ParkJe-Hoon BaekJong-Sang KimYoung-Geun Kim
    • H01L31/0216H01L31/18
    • H01L31/02167H01L31/03928H01L31/0749H01L31/18Y02E10/541Y02P70/521
    • One aspect of the present invention is a solar cell substrate, comprising: a lower substrate; and a lower electrode that is formed on the upper part of said lower substrate, wherein a metal diffusion-preventing film having at least one or two or more metal layers is included between said lower substrate and said lower electrode, and if two or more metal layers are formed, the metal layers adjoining each other can be different metals. Additionally, a solar cell, which is another aspect of the present invention, comprises: a lower substrate; and a lower electrode that is formed on the upper part of said lower substrate, wherein a metal diffusion-preventing film having at least one or two or more metal layers is included between said lower substrate and said lower electrode, and if two or more metal layers are formed, the metal layers adjoining each other comprise solar cell substrates which are of different metals; p-type light absorption layers formed on said solar cell substrates; n-type buffer layers formed on said light absorption layers; transparent windows formed on said buffer layers; and upper electrodes formed on said transparent windows.
    • 本发明的一个方面是太阳能电池基板,包括:下基板; 以及形成在所述下基板的上部的下电极,其中在所述下基板和所述下电极之间包括具有至少一个或两个或更多个金属层的金属防扩散膜,并且如果两个或更多个金属 形成层,彼此相邻的金属层可以是不同的金属。 此外,作为本发明的另一方面的太阳能电池包括:下基板; 以及形成在所述下基板的上部的下电极,其中在所述下基板和所述下电极之间包括具有至少一个或两个或更多个金属层的金属防扩散膜,并且如果两个或更多个金属 形成层,彼此相邻的金属层包括具有不同金属的太阳能电池基板; 形成在所述太阳能电池基板上的p型光吸收层; 形成在所述光吸收层上的n型缓冲层; 形成在所述缓冲层上的透明窗; 和形成在所述透明窗口上的上电极。
    • 5. 发明授权
    • DCVG-CIPS measuring apparatus for detecting the results of a pipe line
    • DCVG-CIPS测量装置,用于检测管道的结果
    • US07292052B2
    • 2007-11-06
    • US10554060
    • 2003-06-30
    • Young-Tai KhoJae-Young JeonKyeong-Wan ParkYong-Bum ChoSeon-Yeob LiYoung-Geun Kim
    • Young-Tai KhoJae-Young JeonKyeong-Wan ParkYong-Bum ChoSeon-Yeob LiYoung-Geun Kim
    • G01R27/08
    • G01N17/02
    • The present invention relates to a pipeline examination apparatus for Direct Current Voltage Gradient (DCVG) and Closed Interval Potential Survey (CIPS) methods. The pipeline examination apparatus of the present invention detects and analyzes at least one electrode signal while supplying an anticorrosive current to a buried pipeline by switching on and off the anticorrosive current at predetermined intervals. The pipeline examination apparatus includes a signal detection unit and a measurement unit. The signal detection unit detects the electrode signal including a DCVG electrode signal and/or a CIPS electrode signal. The measurement unit receives the electrode signal from the signal detection unit and analyzes the electrode signal. The measurement unit includes a measurement method selection unit, a control unit, a storage unit, an analysis unit and a display unit.
    • 本发明涉及一种用于直流电压梯度(DCVG)和闭式间隔电位测量(CIPS)方法的管道检查装置。 本发明的管线检查装置通过以预定的间隔接通和断开防腐蚀电流来检测并分析至少一个电极信号,同时向埋设的管道提供防腐蚀电流。 管道检查装置包括信号检测单元和测量单元。 信号检测单元检测包括DCVG电极信号和/或CIPS电极信号的电极信号。 测量单元从信号检测单元接收电极信号并分析电极信号。 测量单元包括测量方法选择单元,控制单元,存储单元,分析单元和显示单元。