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31. 发明申请

US20070111469A1 Method for fabricating semiconductor device with bulb-shaped recess gate 审中-公开
标题翻译：制造具有灯泡形凹槽的半导体器件的方法
公开(公告)号：US20070111469A1
公开(公告)日：2007-05-17
申请号：US11477536
申请日：2006-06-30
申请人： Sei-Jin Kim , Ki-Won Nam
发明人： Sei-Jin Kim , Ki-Won Nam
IPC分类号： H01L21/76
CPC分类号： H01L21/823437 , H01L21/28114 , H01L29/4236 , H01L29/42376 , H01L29/66621
摘要： A method for fabricating a semiconductor device includes: forming a pad oxide layer over a substrate; forming a hard mask pattern over the pad oxide layer; etching a predetermined portion of the pad oxide layer and the substrate using the hard mask pattern to form a first recess having sidewalls and a bottom portion; forming a spacer over the hard mask pattern and on the sidewalls and the bottom portion of the first recess; and etching the substrate beneath the first recess using the spacer as an etch barrier to form a second recess, the second recess being wider and more rounded than the first recess.
摘要翻译：一种制造半导体器件的方法包括：在衬底上形成衬垫氧化层; 在所述焊盘氧化物层上形成硬掩模图案; 使用所述硬掩模图案蚀刻所述焊盘氧化物层和所述衬底的预定部分以形成具有侧壁和底部的第一凹部; 在所述硬掩模图案上方和所述第一凹部的所述侧壁和所述底部上形成间隔物; 以及使用所述间隔件作为蚀刻阻挡层来蚀刻所述第一凹部下方的所述基底以形成第二凹部，所述第二凹部比所述第一凹部更宽且更圆。

32. 发明申请

US20060292843A1 Method for fabricating semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060292843A1
公开(公告)日：2006-12-28
申请号：US11323525
申请日：2005-12-29
申请人： Seung-Bum Kim , Ki-Won Nam
发明人： Seung-Bum Kim , Ki-Won Nam
IPC分类号： H01L21/465
CPC分类号： H01L21/76897
摘要： Provided is a method for fabricating a semiconductor device, capable of increasing a contact open margin and minimizing a shoulder loss of a gate line. The method includes: forming a gate line on a substrate, the gate line including a first hard mask and a second hard mask; forming an inter-layer insulating layer over the substrate and the gate line; stacking a contact mask and an anti-reflective coating layer on the inter-layer insulating layer, the contact mask defining a contact region; and etching the contact mask and the anti-reflective coating layer until the first and second hard masks are exposed.
摘要翻译：提供了一种制造半导体器件的方法，其能够增加接触开口边缘并最小化栅极线的肩部损耗。该方法包括：在衬底上形成栅极线，栅极线包括第一硬掩模和第二硬掩模; 在衬底和栅极线上形成层间绝缘层; 在所述层间绝缘层上层叠接触掩模和抗反射涂层，所述接触掩模限定接触区域; 以及蚀刻所述接触掩模和所述抗反射涂层，直到暴露所述第一和第二硬掩模。

33. 发明申请

US20060141797A1 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20060141797A1
公开(公告)日：2006-06-29
申请号：US11311985
申请日：2005-12-20
申请人： Ki-Won Nam , Jae-Young Kim
发明人： Ki-Won Nam , Jae-Young Kim
IPC分类号： H01L21/461
CPC分类号： H01L21/3065 , H01L29/66636
摘要： A method for fabricating a semiconductor device is provided. The method includes: forming device isolation layers on a substrate; sequentially forming an anti-reflective coating layer and a photoresist layer on the substrate; patterning the anti-reflective coating layer and the photoresist layer to expose substrate regions in which active regions of a metal oxide semiconductor (MOS) transistor will be formed; and recessing the exposed substrate regions in a predetermined thickness.
摘要翻译：提供一种制造半导体器件的方法。该方法包括：在衬底上形成器件隔离层; 在基板上依次形成抗反射涂层和光致抗蚀剂层; 图案化抗反射涂层和光致抗蚀剂层以暴露将形成金属氧化物半导体（MOS）晶体管的有源区的衬底区域; 并将暴露的衬底区域以预定厚度凹陷。

34. 发明授权

US10147120B2 Smart commerce information providing system using wireless terminal and method therefor 有权
公开(公告)号：US10147120B2
公开(公告)日：2018-12-04
申请号：US14426731
申请日：2013-09-06
申请人： Ki-Won Nam
发明人： Ki-Won Nam
IPC分类号： G06Q30/02 , G06F17/30
摘要： Disclosed are a smart commerce information providing system using a wireless terminal and a method thereof. In the smart commerce information providing system using a wireless terminal, the interactive information (query information and response information) for each personal information of user is registered only at a wireless terminal of each user, and marketing information that a seller intends to advertise is selectively relayed to be transmitted to a user who has the marketing information that the seller wants, so that personal information leakage is prevented and negative mentality of user against advertising information is eliminated to increase marketing effects, and a method thereof.

35. 发明授权

US08863177B2 System for controlling automatic exposure of broadcast advertisement data and method for same 有权
标题翻译：用于控制广播广告数据的自动曝光的系统及其方法
公开(公告)号：US08863177B2
公开(公告)日：2014-10-14
申请号：US12919471
申请日：2009-02-25
申请人： Ji-Hyuk Cha , Pyong-Taek Kim , Nam-A Park , Joo-Won Lee , Ki-Won Nam
发明人： Ji-Hyuk Cha , Pyong-Taek Kim , Nam-A Park , Joo-Won Lee , Ki-Won Nam
IPC分类号： H04N7/10 , H04N7/173 , H04N21/81 , H04N21/438 , H04H60/63 , H04N21/431 , H04H60/32
CPC分类号： H04N7/173 , H04H60/32 , H04H60/63 , H04N21/4316 , H04N21/4383 , H04N21/812
摘要： A system for inserting advertisement data into broadcast data and method thereof are provided. The system and method can output advertisement data to a certain portion of a lower end of a screen image of the new channel for a certain time when a current channel is changed to a different broadcast channel according to a viewer's intention while the viewer is viewing a broadcast program, thus minimizing viewer's reluctance to the advertisement output, reducing the burden of an advertiser, and guaranteeing a visual continuity of a broadcast program desired to be searched. Using the present invention, when channels are switched for searching for broadcast programs or when power is turned on or off, advertisement data can be output to the same screen while outputting a pertinent broadcast program, thereby exposing the advertisement data without interrupting the broadcast program.
摘要翻译：提供了一种用于将广告数据插入到广播数据中的系统及其方法。当观看者正在观看时，系统和方法可以在当前频道根据观众的意图改变到不同的广播频道的特定时间，将广告数据输出到新频道的屏幕图像的下端的特定部分广播节目，从而最小化观众对广告输出的不愿，减轻了广告商的负担，并保证了希望被搜索的广播节目的视觉连续性。使用本发明，当切换用于搜索广播节目的频道或者当打开或关闭电源时，可以在输出相关的广播节目的同时，将广告数据输出到相同的屏幕，从而暴露广告数据而不中断广播节目。

36. 发明申请

US20120295575A1 INTELLIGENT EMERGENCY SIGNAL TRANSMISSION SYSTEM USING MOBILE PHONE AND METHOD THEREOF 有权
标题翻译：使用移动电话的智能应急信号传输系统及其方法
公开(公告)号：US20120295575A1
公开(公告)日：2012-11-22
申请号：US13574927
申请日：2011-01-25
申请人： Ki-Won Nam
发明人： Ki-Won Nam
IPC分类号： H04W4/22
CPC分类号： H04W76/50 , G08B25/016 , G08B25/08 , H04M11/04 , H04W4/90
摘要： An intelligent emergency signal transmission system using a mobile phone and a method thereof are disclosed. According to the intelligent emergency signal transmission system using a mobile phone and the method thereof, even though the user does not separately perform a key operation, the information indicating that the user is in the emergency situation can be transmitted to the mobile phone of the third party by determining whether a pre-registered voice is input. In addition, a call connection with mobile phones to a plurality of third parties registered with the mobile phone of the user can be automatically performed to transmit the emergency signals. Therefore, the third parties can rapidly recognize the emergency situation of the user. In addition, the help request signal can be rapidly transmitted to the third party positioned near the user who is in the emergency situation so that the emergency situation can be effectively overcome.
摘要翻译：公开了一种使用移动电话的智能应急信号传输系统及其方法。根据使用移动电话的智能应急信号传输系统及其方法，即使用户不单独执行密钥操作，可以将表示用户处于紧急情况的信息发送到第三方的移动电话通过确定是否输入预先注册的语音来进行。此外，可以自动执行向用户的移动电话登记的多个第三方的移动电话的呼叫连接以发送紧急信号。因此，第三方可以快速识别用户的紧急情况。此外，可以将帮助请求信号迅速地发送到位于紧急情况下的用户附近的第三方，从而可以有效地克服紧急情况。

37. 发明授权

US07867911B2 Method for forming pattern using hard mask 失效
标题翻译：使用硬掩模形成图案的方法
公开(公告)号：US07867911B2
公开(公告)日：2011-01-11
申请号：US11823770
申请日：2007-06-28
申请人： Ki-Won Nam , Ky-Hyun Han
发明人： Ki-Won Nam , Ky-Hyun Han
IPC分类号： H01L21/467
CPC分类号： H01L21/0332 , H01L21/32139
摘要： A method for forming a pattern in a semiconductor device includes forming an etch target layer, forming a hard mask over the etch target layer, the hard mask including a multiple-layer stack structure comprising a bottom layer, a transformed layer, and an upper layer, wherein the transformed layer is formed by transforming a surface of the bottom layer. The hard mask and the etch target layer are etched.
摘要翻译：一种用于在半导体器件中形成图案的方法包括形成蚀刻目标层，在蚀刻目标层上形成硬掩模，硬掩模包括多层堆叠结构，该多层堆叠结构包括底层，变换层和上层，其中通过转换底层的表面形成变形层。硬掩模和蚀刻目标层被蚀刻。

38. 发明申请

US20090318211A1 Lottery System and Method Using a Settlement Data 审中-公开
标题翻译：彩票系统和使用结算数据的方法
公开(公告)号：US20090318211A1
公开(公告)日：2009-12-24
申请号：US11992258
申请日：2006-10-20
申请人： Ki-Won Nam , Ji-Hyuk Cha , Eun-Young Chung
发明人： Ki-Won Nam , Ji-Hyuk Cha , Eun-Young Chung
IPC分类号： A63F9/24
CPC分类号： G06Q20/20 , G06Q20/12 , G06Q20/24 , G06Q50/34 , G07F17/329
摘要： Provided are a lottery system and method based on the sequence number of payment. The system and method discount a payment amount of a prize winner by an amount that is computed by aggregating certain rates of sales of non-winners by means of giving a sequence number of amount payment for each payment amount group at the time of making card payment or cash payment, and also discount the payment amount depending on the sequence numbering result for each winning probability by allowing customers to select the winning probabilities.
摘要翻译：提供了一种基于付款序列号的彩票系统和方法。该系统和方法通过以下方式折扣获奖者的支付金额：通过在进行卡支付时给予每个支付金额组的支付金额的序列号，通过汇总非赢家的某些销售率来计算的金额或现金支付，并且还通过允许客户选择获胜概率，根据每个获胜概率的顺序编号结果折扣支付金额。

39. 发明授权

US07615494B2 Method for fabricating semiconductor device including plug 失效
标题翻译：用于制造包括插头的半导体器件的方法
公开(公告)号：US07615494B2
公开(公告)日：2009-11-10
申请号：US11617688
申请日：2006-12-28
申请人： Ky-Hyun Han , Ki-Won Nam
发明人： Ky-Hyun Han , Ki-Won Nam
IPC分类号： H01L21/302
CPC分类号： H01L21/76802 , H01L21/7684 , H01L21/76885
摘要： A method for fabricating a semiconductor device includes forming an insulation layer over a substrate, etching the insulation layer using a hard mask pattern to form a contact hole, filling the contact hole with a conductive layer, etching the conductive layer to form a plug in the contact hole, removing the remaining hard mask pattern to expose an upper portion of the plug and have the upper portion protrude above the insulation layer, and forming a metal line over the protruding plug and around the upper portion of the plug.
摘要翻译：一种制造半导体器件的方法包括在衬底上形成绝缘层，使用硬掩模图案蚀刻绝缘层以形成接触孔，用导电层填充接触孔，蚀刻导电层以形成插塞接触孔，去除剩余的硬掩模图案以露出插塞的上部并且使上部突出于绝缘层上方，并且在突出的插塞上方并在插头的上部周围形成金属线。

40. 发明授权

US07563721B2 Method for fabricating semiconductor device capable of decreasing critical dimension in peripheral region 失效
标题翻译：制造能够减小外围区域临界尺寸的半导体器件的方法
公开(公告)号：US07563721B2
公开(公告)日：2009-07-21
申请号：US11654460
申请日：2007-01-17
申请人： Kyung-Won Lee , Ki-Won Nam
发明人： Kyung-Won Lee , Ki-Won Nam
IPC分类号： H01L21/461
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/32139 , H01L27/10894
摘要： A method for fabricating a semiconductor device where a critical dimension in a peripheral region is decreased. The method includes the steps of: forming a silicon nitride layer on a substrate including a cell region and a peripheral region; forming a silicon oxynitride layer on the silicon nitride layer; forming a line-type photoresist pattern on the silicon oxynitride layer such that the photoresist pattern in the cell region has a width larger than that of a final pattern structure and the photoresist pattern in the peripheral region has a width that reduces an incidence of pattern collapse; etching the silicon oxynitride layer and the silicon nitride layer until widths of a remaining silicon oxynitride layer and a remaining silicon nitride layer are smaller than the width of the photoresist pattern used as an etch mask through suppressing generation of polymers; and over-etching the remaining silicon nitride layer.
摘要翻译：一种半导体器件的制造方法，其中周边区域的临界尺寸减小。该方法包括以下步骤：在包括单元区域和周边区域的基板上形成氮化硅层; 在氮化硅层上形成氧氮化硅层; 在氮氧化硅层上形成线型光致抗蚀剂图案，使得单元区域中的光致抗蚀剂图案的宽度大于最终图案结构的宽度，并且周边区域中的光致抗蚀剂图案具有减小图案崩溃的发生率的宽度 ; 通过抑制聚合物的产生，蚀刻硅氧氮化物层和氮化硅层，直到剩余的氮氧化硅层和剩余的氮化硅层的宽度小于用作蚀刻掩模的光致抗蚀剂图案的宽度; 并过剩蚀刻剩余的氮化硅层。

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