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    • 37. 发明授权
    • Inspection of circuit patterns for defects and analysis of defects using a charged particle beam
    • 使用带电粒子束检查缺陷的电路图案和缺陷分析
    • US06566654B1
    • 2003-05-20
    • US09697773
    • 2000-10-27
    • Ryuichi FunatsuShigeto IsakozawaHidemi Koike
    • Ryuichi FunatsuShigeto IsakozawaHidemi Koike
    • G03F900
    • H01J37/28H01J2237/2817H01J2237/3174
    • The present invention is intended to detect defects in a circuit pattern formed on a semiconductor wafer by a circuit pattern forming process, to facilitates the extraction and observation of the defects, to improve the accuracy of analysis of the causes of the defects, and to determine the causes of the defects and to take measures to eliminate the causes of the defects in a greatly reduced time after the formation of the defects. A method of inspecting a circuit pattern for defects and analyzing defects, comprising locating a defect in a circuit pattern formed on a wafer by using an electron beam, specifying a chip having the defect on the basis of position data on the defect, cutting out the chip from the semiconductor wafer, thinning a portion of the chip to form a thin portion, and observing the thin portion of the chip under a transmission electron microscope to determine the causes of the defect.
    • 本发明旨在通过电路图案形成处理来检测在半导体晶片上形成的电路图案中的缺陷,以便于提取和观察缺陷,提高对缺陷原因的分析准确性,并确定 造成缺陷的原因,并在形成缺陷后大幅度缩短的时间内采取措施消除缺陷的原因。 一种用于检查缺陷的电路图案和分析缺陷的方法,包括通过使用电子束将形成在晶片上的电路图案中的缺陷定位在缺陷上,根据缺陷的位置数据指定具有缺陷的芯片, 从半导体晶片切片,使芯片的一部分变薄以形成薄的部分,并且在透射电子显微镜下观察芯片的薄部分以确定缺陷的原因。
    • 40. 发明授权
    • Sample evaluation/process observation system and method
    • 样本评估/过程观察系统和方法
    • US5783830A
    • 1998-07-21
    • US873788
    • 1997-06-12
    • Hiroshi HiroseHidemi KoikeShigeto IsakozawaYuji SatoMikio IchihashiMotohide Ukiana
    • Hiroshi HiroseHidemi KoikeShigeto IsakozawaYuji SatoMikio IchihashiMotohide Ukiana
    • H01J37/305H01J37/20
    • H01J37/3056H01J37/265H01J2237/20H01J2237/26
    • A sample evaluation/process observation system includes a common sample stage which accommodates a plurality of samples to be processed. The common sample stage is provided with a processing/observing notch and also with a movement mechanism. The movement mechanism functions to sequentially move the plurality of samples to the notch to cause the samples to be exposed to a predetermined processing beam and observing beam. The system further includes a beam processing device in which the common sample stage can be mounted and which functions to irradiate the predetermined processing beam on the plurality of samples through the notch to thereby sequentially perform beam processing operation over the samples. The system further includes a beam observation device in which the common sample stage can be mounted and which functions to irradiate the predetermined observing beam on the plurality of samples through the notch to sequentially observe and evaluate shapes of the plurality of samples. A mark is formed on one sample by a focused ion beam device so that positioning of the mark realizes automatic processing of a part of the sample to be processed. Further, the common sample stage is used in a high-acceleration transmission electron microscope and a high-acceleration scanning electron microscope and focused ion beam device.
    • 样本评估/过程观察系统包括容纳多个待处理样本的公共样本阶段。 公共样品台具有处理/观察凹口,并且还具有移动机构。 移动机构用于将多个样本顺序地移动到凹口,以使样本暴露于预定的处理束和观察波束。 该系统还包括其中可以安装公共样本台的束处理装置,并且其功能是通过凹口对多个采样上的预定处理光束照射,从而顺序地对采样进行光束处理操作。 该系统还包括其中可以安装公共样品台的束观察装置,并且其功能是通过凹口将多个样品上的预定观察光束照射,以依次观察和评估多个样品的形状。 通过聚焦离子束装置在一个样品上形成标记,使得标记的定位实现待处理样品的一部分的自动处理。 此外,普通样品台用于高加速度透射电子显微镜和高加速度扫描电子显微镜和聚焦离子束装置。