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    • 36. 发明授权
    • Process for producing fluoropolymer
    • 生产含氟聚合物的方法
    • US07790817B2
    • 2010-09-07
    • US11618088
    • 2006-12-29
    • Atsushi WatakabeSusumu SaitoAdam Luke Safir
    • Atsushi WatakabeSusumu SaitoAdam Luke Safir
    • C08F2/00
    • C08F214/182C08F214/26C08F214/262
    • Provided is a process for producing a fluoropolymer containing repeating units based on a fluoromonomer represented by the following formula (m) in an amount of from 5 to 50 mol % based on the entire repeating units in the polymer by polymerization reaction of tetrafluoroethylene and the fluoromonomer, wherein the polymerization reaction is carried out by continuously charging the reactor with tetrafluoroethylene and the fluoromonomer: wherein ml is an integer of from 1 to 6. Also provided is an electrolyte material for an electrolyte fuel cell which can be operated at a high temperature to obtain a high output, wherein the electrolyte material contains the fluoropolymer produced by the process.
    • 本发明提供一种含氟聚合物的制造方法,所述含氟聚合物含有基于由下式(m)表示的含氟单体的重复单元,所述重复单元的量为5-40摩尔%,相对于聚合物中的全部重复单元,四氟乙烯与含氟单体的聚合反应 其中聚合反应是通过用四氟乙烯和含氟单体连续地加入反应器来进行的:其中,ml是1至6的整数。还提供了一种用于电解质燃料电池的电解质材料,其可以在高温至 获得高产量,其中电解质材料含有通过该方法生产的含氟聚合物。
    • 39. 发明授权
    • Substrate processing control method and storage medium
    • 基板处理控制方法和存储介质
    • US07824931B2
    • 2010-11-02
    • US12511749
    • 2009-07-29
    • Susumu SaitoAkitaka Shimizu
    • Susumu SaitoAkitaka Shimizu
    • H01L21/66
    • H01L21/67069H01L21/67242H01L22/12H01L22/26H01L2924/0002H01L2924/00
    • In a substrate processing control method, a first process acquires a first-reflectance-spectrum of a beam reflected from the first-fine-structure and a second-reflectance-spectrum of a beam reflected from the second-fine-structure for each of varying-pattern-dimensions of the first-fine-structure when the pattern-dimension of the first-fine-structure is varied. A second process acquires reference-spectrum-data for each of the varying-pattern-dimensions of the first-fine-structure by overlapping the first-reflectance-spectrum with the second-reflectance-spectrum. A third process actually measures beams reflected from the first and the second-fine-structure, respectively, after irradiating light beam on to the substrate and acquiring reflectance-spectrums of the actual-measured beams as actual-measured spectrum data. A fourth process compares the actual-measured spectrum data with the respective reference-spectrum data and acquiring, as the measured pattern-dimension, one of the varying-pattern-dimensions corresponding to reference-spectrum data that is closely matches with the actual-measured spectrum data. A final process ends the processing of the substrate if the measured pattern-dimension reaches a value.
    • 在基板处理控制方法中,第一处理取得从第一微细结构反射的光束的第一反射光谱和从第二微细结构反射的光束的第二反射光谱, 当第一微细结构的图案尺寸变化时,第一微细结构的图案尺寸。 第二过程通过将第一反射光谱与第二反射光谱重叠来获取第一精细结构的每个变化图形尺寸的参考光谱数据。 第三处理实际上是在将光束照射到衬底上之后分别测量从第一和第二微细结构反射的光束,并且将实测光束的反射光谱作为实测光谱数据进行测量。 第四个过程将实际测量的频谱数据与相应的参考频谱数据进行比较,并且将与参考频谱数据相对应的变化模式维度中的一个与实际测量的频谱数据紧密匹配,作为测量的模式维度 频谱数据。 如果测量的图案尺寸达到一个值,则最后的处理结束衬底的处理。
    • 40. 发明授权
    • Plasma processing method and plasma processing apparatus for performing accurate end point detection
    • 用于执行精确终点检测的等离子体处理方法和等离子体处理装置
    • US07662646B2
    • 2010-02-16
    • US11687428
    • 2007-03-16
    • Kosuke OgasawaraSusumu SaitoSyuji Nozawa
    • Kosuke OgasawaraSusumu SaitoSyuji Nozawa
    • H01L21/00
    • H01J37/32935H01J37/32963H01L22/26
    • In a plasma processing method, a correlation between substrate type data and optical data is obtained by using a multivariate analysis; substrate type data is obtained from optical data based on the correlation when initiating a plasma processing; and a substrate type is determined by using the obtained substrate type data. Further, a setting data set corresponding to the determined substrate type is selected from setting data sets, each for detecting a plasma processing end point of the plasma processing, each of the setting data sets being stored in advance in a data storage unit; an end point of the plasma processing is detected based on the selected setting data set; and the plasma processing is terminated at the detected end point.
    • 在等离子体处理方法中,通过使用多元分析获得基板类型数据和光学数据之间的相关性; 基于等离子体处理时的相关性,从光学数据获得基板型数据; 并且通过使用所获得的基板类型数据来确定基板类型。 此外,从设置数据组中选择与所确定的基板类型相对应的设置数据集,每个设置数据组用于检测等离子体处理的等离子体处理结束点,每个设置数据集被预先存储在数据存储单元中; 基于所选择的设置数据集来检测等离子体处理的终点; 并且在检测到的终点处终止等离子体处理。