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31. 发明申请

US20110150641A1 STEAM TURBINE AND STEAM TURBINE BLADE 有权
标题翻译：蒸汽涡轮机和蒸汽涡轮叶片
公开(公告)号：US20110150641A1
公开(公告)日：2011-06-23
申请号：US12977548
申请日：2010-12-23
申请人： Akio SAYANO , Masashi Takahashi , Masahiro Saito , Kazuyoshi Nakajima , Tadashi Tanuma , Satoru Asai , Kenji Kamimura
发明人： Akio SAYANO , Masashi Takahashi , Masahiro Saito , Kazuyoshi Nakajima , Tadashi Tanuma , Satoru Asai , Kenji Kamimura
IPC分类号： F01D9/02
CPC分类号： F01D5/286 , C23C18/1208 , F05D2220/31 , F05D2230/90 , F05D2250/60
摘要： A steam turbine 3 includes: a turbine rotor 4; a rotor blade 5 implanted to the turbine rotor 4; a stator blade 6 provided at an upstream side of the rotor blade 5; and a turbine casing 13 supporting the stator blade 6 and including the turbine rotor 4, the rotor blade 5 and the stator blade 6, and have a constitution in which a stage 7 is formed by a pair of the rotor blade 5 and the stator blade 6, and a steam passage 8 is formed by arranging plural stages 7 in an axial direction of the turbine rotor 4. A surface treatment to suppress an increase of a surface roughness caused by oxidation is performed for at least a part of a surface of the stator blade 6 and a surface of the rotor blade 5.
摘要翻译：蒸汽轮机3包括：涡轮机转子4; 植入涡轮转子4的转子叶片5; 设置在转子叶片5的上游侧的定子叶片6; 以及支撑定子叶片6并且包括涡轮转子4，转子叶片5和定子叶片6的涡轮壳体13，并且具有这样的构造，其中阶段7由一对转子叶片5和定子叶片形成并且通过在涡轮机转子4的轴向上配置多个级7来形成蒸汽通道8.为了抑制由氧化引起的表面粗糙度的增加，进行表面处理以至少部分表面粗糙度定子叶片6和转子叶片5的表面。

32. 发明授权

US07371489B2 Photomask, method for detecting pattern defect of the same, and method for making pattern using the same 有权
标题翻译：光掩模，用于检测图案缺陷的方法，以及使用其形成图案的方法
公开(公告)号：US07371489B2
公开(公告)日：2008-05-13
申请号：US11437628
申请日：2006-05-22
申请人： Tomohiko Yamamoto , Satoru Asai
发明人： Tomohiko Yamamoto , Satoru Asai
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F1/84 , G03F1/36 , G06T7/0004 , G06T2207/30148
摘要： There exist a pattern-dense region where patterns having an F-letter shape are dense and a pattern-interspersed region where small rectangular dummy patterns are interspersed. In the pattern-interspersed region, the dummy patterns are arranged in a manner that at least one dummy pattern exists in a scan target range of a mask pattern defect inspecting apparatus. With the dummy patterns formed in the pattern-interspersed region at the intervals as described above, when one scan target range is scanned by the mask pattern defect inspecting apparatus, at least one dummy pattern is included in the scan target range in the pattern-interspersed region. Therefore, mix-up of alignment in this range is prevented from occurring, which makes it possible to perform proper defect inspection.
摘要翻译：存在具有F字母形状的图案是密集的图案密集区域和散布有小矩形虚拟图案的图案散布区域。在图案散布区域中，虚设图案以在掩模图案缺陷检查装置的扫描目标范围内存在至少一个虚拟图案的方式布置。利用如上所述的间隔在图案散布区域中形成的虚拟图案，当通过掩模图案缺陷检查装置扫描一个扫描目标范围时，在图案散布的扫描目标范围中包括至少一个虚拟图案地区。因此，防止了在该范围内的对准混合，这使得可以进行适当的缺陷检查。

33. 发明申请

US20060210930A1 Photomask, method for detecting pattern defect of the same, and method for making pattern using the same 有权
公开(公告)号：US20060210930A1
公开(公告)日：2006-09-21
申请号：US11437628
申请日：2006-05-22
申请人： Tomohiko Yamamoto , Satoru Asai
发明人： Tomohiko Yamamoto , Satoru Asai
IPC分类号： G03C5/00 , G06F17/50
CPC分类号： G03F1/84 , G03F1/36 , G06T7/0004 , G06T2207/30148
摘要： There exist a pattern-dense region where patterns having an F-letter shape are dense and a pattern-interspersed region where small rectangular dummy patterns are interspersed. In the pattern-interspersed region, the dummy patterns are arranged in a manner that at least one dummy pattern exists in a scan target range of a mask pattern defect inspecting apparatus. With the dummy patterns formed in the pattern-interspersed region at the intervals as described above, when one scan target range is scanned by the mask pattern defect inspecting apparatus, at least one dummy pattern is included in the scan target range in the pattern-interspersed region. Therefore, mix-up of alignment in this range is prevented from occurring, which makes it possible to perform proper defect inspection.

34. 发明授权

US07074524B2 Photomask, method for detecting pattern defect of the same, and method for making pattern using the same 失效
标题翻译：光掩模，用于检测图案缺陷的方法，以及使用其形成图案的方法
公开(公告)号：US07074524B2
公开(公告)日：2006-07-11
申请号：US10367859
申请日：2003-02-19
申请人： Tomohiko Yamamoto , Satoru Asai
发明人： Tomohiko Yamamoto , Satoru Asai
IPC分类号： G03F9/00
CPC分类号： G03F1/84 , G03F1/36 , G06T7/0004 , G06T2207/30148
摘要： There exist a pattern-dense region where patterns having an F-letter shape are dense and a pattern-interspersed region where small rectangular dummy patterns are interspersed. In the pattern-interspersed region, the dummy patterns are arranged in a manner that at least one dummy pattern exists in a scan target range of a mask pattern defect inspecting apparatus. With the dummy patterns formed in the pattern-interspersed region at the intervals as described above, when one scan target range is scanned by the mask pattern defect inspecting apparatus, at least one dummy pattern is included in the scan target range in the pattern-interspersed region. Therefore, mix-up of alignment in this range is prevented from occurring, which makes it possible to perform proper defect inspection.
摘要翻译：存在具有F字母形状的图案是密集的图案密集区域和散布有小矩形虚拟图案的图案散布区域。在图案散布区域中，虚设图案以在掩模图案缺陷检查装置的扫描目标范围内存在至少一个虚拟图案的方式布置。利用如上所述的间隔在图案散布区域中形成的虚拟图案，当通过掩模图案缺陷检查装置扫描一个扫描目标范围时，在图案散布的扫描目标范围中包括至少一个虚拟图案地区。因此，防止了在该范围内的对准混合，这使得可以进行适当的缺陷检查。

35. 发明申请

US20050225736A1 Local flare correction 有权
标题翻译：局部耀斑校正
公开(公告)号：US20050225736A1
公开(公告)日：2005-10-13
申请号：US11147213
申请日：2005-06-08
申请人： Teruyoshi Yao , Satoru Asai
发明人： Teruyoshi Yao , Satoru Asai
IPC分类号： G03F7/20 , H01L21/027 , G03B27/68
CPC分类号： G03F7/70941 , G03F1/44 , G03F1/70
摘要： A correction of a local flare generated at a time of exposure when manufacturing a semiconductor device, wherein a substantial numerical aperture to a pattern in a region to be exposed is calculated for the each region, after that, the flare correction amount for the pattern in the each region is adjusted in conformity with the substantial numerical aperture and exposure conditions in the each region. Backed by this, the effect of the local flare on the pattern exposed by photolithography can be quantitatively corrected in conformity with the respective exposure conditions, so that a desired pattern can be formed readily and accurately.
摘要翻译：在制造半导体器件时在曝光时产生的局部光斑的校正，其中针对每个区域计算要暴露的区域中的图案的实质数值孔径，之后，对于图案中的图案的光斑校正量根据每个区域中的实际数值孔径和曝光条件调整每个区域。由此，可以根据各自的曝光条件定量地校正局部光斑对通过光刻曝光的图案的影响，从而可以容易且准确地形成期望的图案。

36. 发明授权

US06045976A Optical exposure method 失效
公开(公告)号：US06045976A
公开(公告)日：2000-04-04
申请号：US734790
申请日：1996-10-25
申请人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
发明人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
IPC分类号： G03F7/20 , G03F7/207 , G03C5/00 , G03F9/00
CPC分类号： G03F7/70566 , G03F7/201 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70283 , G03F7/70583
摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

37. 发明授权

US5994004A Levenson type phase shift photomask and manufacture method of semiconductor device using such photomask 失效
标题翻译：莱文森型相移光掩模和使用这种光掩模的半导体器件的制造方法
公开(公告)号：US5994004A
公开(公告)日：1999-11-30
申请号：US19743
申请日：1998-02-06
申请人： Yasuko Tabata , Satoru Asai , Toshimi Ikeda , Masato Matsumiya
发明人： Yasuko Tabata , Satoru Asai , Toshimi Ikeda , Masato Matsumiya
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30
摘要： A photomask has a plurality of transparent regions defined in an opaque region and classified into first and second groups. Each of the transparent regions belonging to one of the first and second groups is provided with a phase shifter, so that the phase of light transmitted through the transparent region belonging to the first group becomes different from the phase of light transmitted through the transparent region belonging to the second group. The photomask includes: a pair of first transparent regions belonging to the first group and including linear portions disposed in parallel, a virtual straight line interconnecting one ends of the first transparent regions intersecting at a right angle with the extension direction of the linear portions; and a second transparent region belonging to the second group and disposed at the center between, and in parallel to, the linear portions of the pair of first transparent regions, the second transparent region including a linear thickportion and a linear thin portion, the linear thin portion being disposed in an area between the pair of first transparent regions and continuously coupled to the linear thick portion, and a connection portion between the thick and thin portions being indented from the virtual straight line toward the area between the pair of first transparent regions.
摘要翻译：光掩模具有限定在不透明区域中并被分类为第一和第二组的多个透明区域。属于第一组和第二组中的一个的透明区域中的每一个设置有移相器，使得透过属于第一组的透明区域的光的相位与透过透明区域的光的相位不同到第二组。光掩模包括：属于第一组的一对第一透明区域，并且包括平行设置的直线部分，将与直线部分的延伸方向成直角相交的第一透明区域的一端相互连接的虚拟直线; 以及属于第二组的第二透明区域，并且设置在一对第一透明区域的直线部分之间并且平行于中心，第二透明区域包括线性厚度部分和线状薄部分，线性薄片部分设置在一对第一透明区域之间的区域中并且连续地连接到线状厚部分，并且厚部分和薄部分之间的连接部分从假想直线向着该对第一透明区域之间的区域缩进。

38. 发明授权

US5876877A Patterned mask having a transparent etching stopper layer 失效
标题翻译：图案掩模具有透明蚀刻阻挡层
公开(公告)号：US5876877A
公开(公告)日：1999-03-02
申请号：US813387
申请日：1991-12-27
申请人： Isamu Hanyu , Mitsuji Nunokawa , Satoru Asai
发明人： Isamu Hanyu , Mitsuji Nunokawa , Satoru Asai
IPC分类号： G03F1/30 , G03F1/68 , G03F1/72 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30 , G03F1/26 , G03F1/72
摘要： An optical exposure mask for patterning an optical beam comprises an etching stop layer of a material that is substantially transparent with respect to the optical beam, a transparent pattern provided on one of upper and lower major surfaces of the etching stop layer, and an opaque pattern provided on one of the upper and lower major surfaces of the etching stop layer for patterning the optical beam, wherein the material for the etching stop layer is selected from a group essentially consisted of Al.sub.2 O.sub.3, MgO and a mixture thereof, and the etching stop layer has an etching rate that is substantially smaller than the etching rate of a material forming the transparent pattern for any of dry and wet etching processes.
摘要翻译：用于图案化光束的光学曝光掩模包括相对于光束基本透明的材料的蚀刻停止层，设置在蚀刻停止层的上下表面之一上的透明图案，以及不透明图案设置在用于图案化光束的蚀刻停止层的上下表面之一上，其中用于蚀刻停止层的材料选自基本上由Al 2 O 3，MgO及其混合物组成的组，蚀刻停止层具有比用于干法和湿蚀刻工艺中的任何一种形成透明图案的材料的蚀刻速率明显更小的蚀刻速率。

39. 发明授权

US10189105B2 Shielding gas for mag welding, mag welding method, and welded structure 有权
公开(公告)号：US10189105B2
公开(公告)日：2019-01-29
申请号：US13079307
申请日：2011-04-04
申请人： Yasuhito Kamijo , Satoru Asai , Katsunori Wada , Makoto Takahashi
发明人： Yasuhito Kamijo , Satoru Asai , Katsunori Wada , Makoto Takahashi
IPC分类号： B23K9/02 , B23K9/16 , B23K9/173 , B23K35/38 , B23K101/00 , B23K101/10 , B23K103/04
摘要： The shielding gas for MAG welding according to an embodiment is a shielding gas for MAG welding to perform narrow gap welding of a high Cr steel containing 8 wt % to 13 wt % of Cr with one layer-one pass by using a solid wire containing 8 wt % to 13 wt % of Cr, and the shielding gas for MAG welding comprises a ternary mixed gas of 5% by volume to 17% by volume of a carbon dioxide gas, 30% by volume to 80% by volume of a helium gas, and a balance of an argon gas.

40. 发明授权

US09217731B2 Welding inspection method and apparatus thereof 有权
标题翻译：焊接检验方法及装置
公开(公告)号：US09217731B2
公开(公告)日：2015-12-22
申请号：US13111217
申请日：2011-05-19
申请人： Setsu Yamamoto , Takahiro Miura , Takeshi Hoshi , Tsuyoshi Ogawa , Yoshihiro Fujita , Shozo Hirano , Kazumi Watanabe , Satoshi Nagai , Masahiro Yoshida , Satoru Asai , Makoto Ochiai , Jun Semboshi
发明人： Setsu Yamamoto , Takahiro Miura , Takeshi Hoshi , Tsuyoshi Ogawa , Yoshihiro Fujita , Shozo Hirano , Kazumi Watanabe , Satoshi Nagai , Masahiro Yoshida , Satoru Asai , Makoto Ochiai , Jun Semboshi
IPC分类号： G01B11/02 , G01N29/46 , B23K31/12 , G01N29/24
CPC分类号： G01N29/46 , B23K31/125 , G01N29/2418 , G01N2291/267
摘要： A welding inspection method has steps of: generating transmission laser light for generating an ultrasonic wave and transmitting the transmission laser light to an object to be inspected during or after welding operation for irradiation; generating reception laser light for detecting an ultrasonic wave and transmitting the reception laser light to the object to be inspected for irradiation; collecting laser light scattered and reflected at surface of the object to be inspected; performing interference measurement of the laser light and obtaining an ultrasonic signal; and analyzing the ultrasonic signal obtained by the interference measurement. At least one of the transmission laser light generated in the transmission laser light irradiation step and the reception laser light generated in the reception laser light irradiation step is irradiated onto a welded metal part or a groove side surface.
摘要翻译：焊接检查方法具有以下步骤：产生用于产生超声波的发射激光，并且在用于照射的焊接操作期间或之后将发送激光发射到待检查对象; 产生用于检测超声波的接收激光并将接收激光发送到待检查对象进行照射; 收集被检测物体的表面散射并反射的激光; 执行激光的干涉测量并获得超声波信号; 并分析通过干涉测量得到的超声波信号。在发射激光照射步骤中产生的发射激光中的至少一个和在接收激光照射步骤中产生的接收激光照射到焊接的金属部分或槽侧表面上。

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