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31. 发明授权

US4988637A Method for fabricating a mesa transistor-trench capacitor memory cell structure 失效
标题翻译：制造台面晶体管 - 沟槽电容器存储单元结构的方法
公开(公告)号：US4988637A
公开(公告)日：1991-01-29
申请号：US546194
申请日：1990-06-29
申请人： Sang H. Dhong , Wei Hwang
发明人： Sang H. Dhong , Wei Hwang
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10844
摘要： A method is described for fabricating a DRAM cell in a monocrystalline substrate wherein the cell includes an FET transistor and a capacitor. The method includes the steps of providing a buried storage capacitor in a trench in the substrate; forming a semiconductor mesa area juxtaposed to the buried storage capacitor; opening a channel to a contact of the storage capacitor; depositing a semiconductor layer over the mesa area and in the opened channel; removing a substantial portion of the conductive layer while leaving at least a connecting portion of the conductive layer deposited in the channel and in communication with the semiconductor mesa; and forming an FET gate structure including a source and drain on the mesa whereby the connecting conductive portion provides a conductive path between the FET and the capacitor.

32. 发明授权

US4927779A Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor 失效
标题翻译：互补金属氧化物半导体晶体管和单电容器动态随机存取存储器单元及其制造工艺
公开(公告)号：US4927779A
公开(公告)日：1990-05-22
申请号：US428159
申请日：1989-10-27
申请人： Sang H. Dhong , Nicky C. Lu , Walter H. Henkels
发明人： Sang H. Dhong , Nicky C. Lu , Walter H. Henkels
IPC分类号： G11C11/404 , H01L27/06 , H01L27/108
CPC分类号： H01L27/0688 , G11C11/404 , H01L27/108
摘要： A complementary MOS one-capacitor dynamic RAM cell which operates with a non-boosted wordline without a threshold loss problem and which includes one storage capacitor and n- and p-type transfer devices connected to the storage capacitor which function as two complementary transistor devices having gates controlled by complementary signals on the RAM wordlines.
摘要翻译：一种互补的MOS单电容器动态RAM单元，其在没有阈值损耗问题的情况下与非升压字线一起工作，并且包括连接到存储电容器的一个存储电容器和n型和p型转移装置，其作为两个互补晶体管器件起作用，由RAM字线上的互补信号控制的门。

33. 发明授权

US4920065A Method of making ultra dense dram cells 失效
标题翻译：制造超密度电池的方法
公开(公告)号：US4920065A
公开(公告)日：1990-04-24
申请号：US428100
申请日：1989-10-27
申请人： Daeje Chin , Sang H. Dhong
发明人： Daeje Chin , Sang H. Dhong
IPC分类号： H01L21/3065 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10864 , H01L21/3065 , H01L27/10841
摘要： This invention relates generally to dynamic random access, semiconductor memory arrays and more specifically relates to an ultra dense dynamic random access memory array. It also relates to a method of fabricating such arrays using a plurality of etch and refill steps which includes a differential etching step which is a key step in forming insulating conduits which themselves are adapted to hold a pair of field effect transistor gates of the adjacent transfer devices of one device memory cells. The differential etch step provides spaced apart device regions and an insulation region of reduced height between the trenches which space apart the memory cells. The resulting structure includes a plurality of rows of vertically arranged field effect transistors wherein the substrate effectively acts as a counterelectrode surrounding the insulated drain regions of each of the one device memory cells. A pair of gates are disposed in insulating conduits which run perpendicular to the rows of memory cells. Each gate in a conduit is disposed in insulated spaced relationship with a memory cell channel region which, in response to signals on the gate turns on a column of channel regions so as to permit the entry of charge into a selected storage region when a bitline associated with a particular cell is energized. The resulting array shows rows of pairs of memory cells wherein each cell of a pair is spaced from the other by a portion of the substrate acting as a counterelectrode and each of the pairs of memory cells is similarly separated from an adjacent pair by regions of conductive material acting as a counterelectrode.
摘要翻译：本发明一般涉及动态随机存取，半导体存储器阵列，更具体地涉及超密度动态随机存取存储器阵列。它还涉及使用多个蚀刻和再填充步骤制造这种阵列的方法，其包括差分蚀刻步骤，该差分蚀刻步骤是形成绝缘导管的关键步骤，其本身适用于保持相邻转移体的一对场效应晶体管栅极一个设备存储单元的设备。差分蚀刻步骤提供间隔开的器件区域和间隔开存储器单元的沟槽之间的高度减小的绝缘区域。所得到的结构包括多行垂直布置的场效应晶体管，其中衬底有效地用作围绕每个器件存储单元的绝缘漏区的反电极。一对门设置在垂直于存储单元行行进的绝缘导管中。管道中的每个门与存储器单元通道区域以绝对间隔的关系设置，该存储器单元通道区域响应于栅极上的信号而导通通道区域列，以便当位线相关联时允许电荷进入选定的存储区域特定的电池通电。所得到的阵列示出了一对存储单元，其中一对的每个单元与作为反电极的基板的一部分间隔开，并且每对存储单元中的每一对类似地通过导电区域与相邻对分开作为反电极的材料。

34. 发明申请

US20110252260A1 Reducing Power Requirements of a Multiple Core Processor 失效
标题翻译：降低多核处理器的电源要求
公开(公告)号：US20110252260A1
公开(公告)日：2011-10-13
申请号：US12756570
申请日：2010-04-08
申请人： Brian K. Flachs , Gilles Gervais , Sang H. Dhong , Tetsuji Tamura
发明人： Brian K. Flachs , Gilles Gervais , Sang H. Dhong , Tetsuji Tamura
IPC分类号： G06F1/00
CPC分类号： G06F9/5094 , G06F1/3287 , G06F1/329 , Y02D10/171 , Y02D10/22 , Y02D10/24 , Y02D50/20
摘要： A mechanism is provided for reducing power consumed by a multi-core processor. Responsive to a number of properly functioning processor cores being more than a required number of processor cores in a multi-core processor, the power consumption measurement module determines a number of the properly functioning processor cores to disable. The power consumption measurement module initiates an equal amount of workload to be processed by each of the properly functioning processor cores. The power consumption measurement module determines power consumed by each of the properly functioning processor cores. The power consumption measurement module deactivates one or more of the properly functioning processor cores that have maximum power in order that the number of properly functioning processor cores deactivated is equal to the number of properly functioning processor cores to disable.
摘要翻译：提供了用于减少多核处理器消耗的功率的机制。响应于多个正常运行的处理器内核超过多核处理器中所需数量的处理器内核，功耗测量模块确定要禁用的正常运行的处理器内核的数量。功耗测量模块启动要由每个正常运行的处理器内核处理的相同数量的工作负载。功耗测量模块确定每个正常运行的处理器内核消耗的功耗。功耗测量模块取消激活具有最大功率的一个或多个正常运行的处理器内核，以使已正常运行的处理器内核的数量等于要禁用的正常运行的处理器内核的数量。

35. 发明授权

US07917347B2 Generating a worst case current waveform for testing of integrated circuit devices 有权
标题翻译：产生用于集成电路器件测试的最坏情况电流波形
公开(公告)号：US07917347B2
公开(公告)日：2011-03-29
申请号：US11927840
申请日：2007-10-30
申请人： Makoto Aikawa , Jonathan J. DeMent , Sang H. Dhong , Brian K. Flachs , Gilles Gervais , Iwao Takiguchi , Tetsuji Tamura
发明人： Makoto Aikawa , Jonathan J. DeMent , Sang H. Dhong , Brian K. Flachs , Gilles Gervais , Iwao Takiguchi , Tetsuji Tamura
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G01R31/318364
摘要： Mechanisms for generating a worst case current waveform for testing of integrated circuit devices are provided. Architectural analysis of an integrated circuit device is first performed to determine an initial worst case power workload to be applied to the integrated circuit device. Thereafter, the derived worst case power workload is applied to a model and is simulated to generate a worst case current waveform that is input to an electrical model of the integrated circuit device to generate a worst case noise budget value. The worst case noise budget value is then compared to measured noise from application of the worst case power workload to a hardware implemented integrated circuit device. The worst case current waveform may be selected for future testing of integrated circuit devices or modifications to the simulation models may be performed and the process repeated based on the results of the comparison.
摘要翻译：提供了用于产生用于集成电路器件测试的最坏情况电流波形的机构。首先执行集成电路装置的结构分析，以确定要应用于集成电路装置的初始最坏情况功率工作负荷。此后，将得到的最坏情况功率工作量应用于模型，并且被模拟以产生输入到集成电路器件的电气模型以产生最坏情况噪声预算值的最坏情况电流波形。然后将最坏情况的噪声预算值与从最坏情况功率工作负载应用于硬件实现的集成电路设备的测量噪声进行比较。可以选择最坏情况下的电流波形以用于集成电路设备的未来测试，或者可以对仿真模型进行修改，并且基于比较的结果重复该过程。

36. 发明授权

US07447602B1 System and method for sorting processors based on thermal design point 失效
标题翻译：基于热设计点对处理器进行分类的系统和方法
公开(公告)号：US07447602B1
公开(公告)日：2008-11-04
申请号：US11758034
申请日：2007-06-05
申请人： Douglas H. Bradley , Jonathan J. DeMent , Sang H. Dhong , Brian Flachs , Gilles Gervais , Yoichi Nishino
发明人： Douglas H. Bradley , Jonathan J. DeMent , Sang H. Dhong , Brian Flachs , Gilles Gervais , Yoichi Nishino
IPC分类号： G01R21/00 , G01R21/06
CPC分类号： G01R31/31721 , G01R31/31718
摘要： A system and method for sorting processor chips based on a thermal design point are provided. With the system and method, for each processor chip, a high power workload is run on the processor chip to determine a voltage regulator module (VRM) load line. Thereafter, a thermal design point (TDP) workload is applied to the processor chip and the voltage is varied until a performance of the processor chip falls on the VRM load line. At this point, the power input to the processor chip is measured and used to sort, or bin, the processor chip. The various workloads applied have a constant frequency. From this sorting of processor chips, high speed processors that require less voltage to achieve a desired frequency and low current processors that drain less current while running at a desired frequency may be identified.
摘要翻译：提供了一种基于热设计点分类处理器芯片的系统和方法。利用系统和方法，对于每个处理器芯片，在处理器芯片上运行高功率工作负载以确定电压调节器模块（VRM）负载线。此后，将热设计点（TDP）工作量应用于处理器芯片，并且改变电压直到处理器芯片的性能落在VRM负载线上。此时，对处理器芯片的电源输入进行测量并用于对处理器芯片进行排序或分页。应用的各种工作负载具有恒定的频率。从处理器芯片的这种排序中，可以识别需要较少电压以实现期望频率的低速处理器和在期望频率下运行时消耗较少电流的低电流处理器。

37. 发明授权

US06910165B2 Digital random noise generator 失效
标题翻译：数字随机噪声发生器
公开(公告)号：US06910165B2
公开(公告)日：2005-06-21
申请号：US09795899
申请日：2001-02-28
申请人： Howard H. Chen , Li-Kong Wang , Louis L. Hsu , Sang H. Dhong , Tin-chee Lo
发明人： Howard H. Chen , Li-Kong Wang , Louis L. Hsu , Sang H. Dhong , Tin-chee Lo
IPC分类号： G01R31/28 , H03K3/84 , G06F11/00
CPC分类号： H03K3/84 , G01R31/2841
摘要： A system and method for generating random noise for use in testing electronic devices comprises a first random pattern generator circuit for generating first sets of random bit pattern signals; one or more delay devices each receiving a trigger input signal and a random bit pattern signal set for generating in response a respective delay output signal, each delay output signal being delayed in time with respect to a respective trigger signal, a delay time being determined by the bit pattern set received; and, an oscillator circuit device associated with a respective one or more delay devices for receiving a respective delay output signal therefrom and generating a respective oscillating signal, each oscillator signal generated being used to generate artificial random noise for emulating a real noise environment in an electronic device. A second random pattern generator circuit may be provided for generating second sets of random bit pattern signals for receipt by each of the associated oscillator circuit devices in order to frequency adjust in a random manner, each of the oscillator signals.
摘要翻译：用于产生用于测试电子设备的随机噪声的系统和方法包括：第一随机模式发生器电路，用于产生第一组随机位模式信号; 每个接收触发输入信号的一个或多个延迟装置和随机位模式信号组，用于响应于相应的延迟输出信号而产生，每个延迟输出信号相对于相应的触发信号在时间上延迟，延迟时间由接收到位模式集; 以及与相应的一个或多个延迟装置相关联的振荡器电路装置，用于从其接收相应的延迟输出信号并产生相应的振荡信号，所产生的每个振荡器信号用于产生人造随机噪声，以仿真电子中的实际噪声环境设备。可以提供第二随机模式发生器电路，用于产生第二组随机位模式信号，以便由每个相关联的振荡器电路装置接收，以便随机地调整每个振荡器信号。

38. 发明授权

US5881274A Method and apparatus for performing add and rotate as a single instruction within a processor 失效
标题翻译：用于在处理器内作为单个指令执行加法和旋转的方法和装置
公开(公告)号：US5881274A
公开(公告)日：1999-03-09
申请号：US900261
申请日：1997-07-25
申请人： Hung C. Ngo , Joel A. Silberman , Sang H. Dhong
发明人： Hung C. Ngo , Joel A. Silberman , Sang H. Dhong
IPC分类号： G06F9/302 , G06F9/315 , G06F9/305
CPC分类号： G06F9/3001 , G06F9/30032
摘要： An apparatus for performing ADD and ROTATE as a single instruction within a processor is disclosed. In accordance with a preferred embodiment of the present invention, the apparatus comprises an adder and a rotator. The adder is utilized for adding a first number to a second number in a multiple stages to yield a carry-out and a sum output. During each of these stages, the adder produces a group generate value and a group propagate value. The rotator is utilized for rotating the group propagate value and the group generate value at each of the stages before the yielding of the carry-out and the sum output. As such, both ADD and ROTATE instructions can be completed within a single processor cycle.
摘要翻译：公开了一种用于在处理器内执行ADD和ROTATE作为单个指令的装置。根据本发明的优选实施例，该装置包括加法器和旋转器。加法器用于将多个第一数字加到多个第二数目中以产生一个进位输出和一个和输出。在每个阶段中，加法器产生组生成值和组传播值。旋转器用于旋转组传播值，并且在进位输出和总和输出的屈服之前的组中的每个级产生组生成值。因此，ADD和ROTATE指令都可以在单个处理器周期内完成。

39. 发明授权

US5621696A Virtual multiple-read port memory array 失效
标题翻译：虚拟多读端口存储器阵列
公开(公告)号：US5621696A
公开(公告)日：1997-04-15
申请号：US626613
申请日：1996-01-26
申请人： Sang H. Dhong , Joseph J. Nocera, Jr.
发明人： Sang H. Dhong , Joseph J. Nocera, Jr.
IPC分类号： G11C8/00 , G11C8/16 , G11C8/02
CPC分类号： G11C8/00 , G11C8/16
摘要： Multiple reads are made from an array of single-read port memory cells. An array of single-read port memory cells is provided with "steering" devices located between a column of cells and the output drivers for the array. The steering devices are controlled by the read pointers such that the steering signal for a given output configuration is active only when read pointers for that output configuration are active. To complete the function, the read pointers are fed to OR gates, one per row, so that a given pointer will activate the read port of a plurality of consecutive memory cells. The read pointers represent the decoded read address and only one is active at a time.
摘要翻译：从单个读取端口存储单元阵列进行多次读取。提供了一个单读端口存储单元阵列，它们位于一列单元格和阵列的输出驱动器之间的“转向”器件。转向装置由读指针控制，使得仅当该输出配置的读指针有效时，给定输出配置的转向信号才有效。为了完成该功能，读指针被馈送到或门，每行一个，使得给定的指针将激活多个连续存储单元的读端口。读取指针表示解码的读取地址，并且每次只有一个是活动的。

40. 发明授权

US5483179A Data output drivers with pull-up devices 失效
标题翻译：具有上拉设备的数据输出驱动器
公开(公告)号：US5483179A
公开(公告)日：1996-01-09
申请号：US230265
申请日：1994-04-20
申请人： Sang H. Dhong , Toshiaki Kirihata , Matthew R. Wordeman
发明人： Sang H. Dhong , Toshiaki Kirihata , Matthew R. Wordeman
IPC分类号： H03K17/687 , G05F3/24 , H03K19/0175 , H01L25/00
CPC分类号： G05F3/24
摘要： A device for controlling the voltage across an NMOS pull-up transistor including a source node which may be exposed to a variable voltage. The device further includes a gate node which may be exposed to a variable voltage. A control portion regulates the voltage applied to the gate node, wherein a differential in voltage between the source node and the gate node is limited to a desired level.
摘要翻译：用于控制跨越NMOS上拉晶体管的电压的装置，其包括可能暴露于可变电压的源节点。该器件还包括可以暴露于可变电压的栅极节点。控制部分调节施加到栅极节点的电压，其中源节点和栅极节点之间的电压差被限制到期望的电平。

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