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    • 31. 发明授权
    • CMOS output circuit device
    • CMOS输出电路器件
    • US4791321A
    • 1988-12-13
    • US888369
    • 1986-07-23
    • Yasunori TanakaYukinori UchinoHideo Hashimoto
    • Yasunori TanakaYukinori UchinoHideo Hashimoto
    • H03K19/0948H03K17/16H03K17/687H03K19/003H03K19/0175H03K17/60H03K19/094
    • H03K19/00361H03K17/162H03K17/164
    • A signal output circuit device according to the present invention comprises a first MOS transistor whose conduction is controlled by the potential given to its gate terminal, and gives the high level potential that is supplied by a high level voltage source to the output terminal, a diode which is inserted between the high level voltage source and the first MOS transistor so as to have its forward direction in the direction from the high level voltage source to the first MOS transistor, a second MOS transistor whose conduction is controlled by the potential given to its gate terminal, and supplies the low level potential supplied by a low level voltage source to the output terminal, and a diode which is inserted between the low level voltage source and the second MOS transistor so as to have its forward direction in the direction from the second MOS transistor to the low level voltage source.
    • 根据本发明的信号输出电路装置包括第一MOS晶体管,其导通被施加到其栅极端子的电位控制,并且将由高电平电压源提供的高电平电位提供给输出端子,二极管 其插入在高电平电压源和第一MOS晶体管之间,以便在从高电平电压源到第一MOS晶体管的方向上具有正向;第二MOS晶体管,其导通被施加到其的电位 并且将由低电平电压源提供的低电平电位提供给输出端子;以及二极管,其被插入在低电平电压源和第二MOS晶体管之间,以使其向前方向从 第二个MOS晶体管到低电平电压源。
    • 32. 发明授权
    • Apparatus for removing foreign matter from flexible support
    • 用于从柔性支撑件移除异物的装置
    • US4577362A
    • 1986-03-25
    • US581019
    • 1984-02-17
    • Yasunori TanakaShinji Noda
    • Yasunori TanakaShinji Noda
    • G11B5/84B05D3/00B05D3/10B05D3/12C08J7/04G03C1/74G03D15/00G11B23/50B08B1/02
    • G03D15/00G11B23/502
    • An apparatus for removing foreign matter from a flexible support such as a photographic film or magnetic tape. After applying a solvent to the surface of the support from which the foreign matter is to be removed, the support is passed over at least two parallel adjacent plates which extend widthwise perpendicular to the direction of movement of the support, with the plates being located relative to the support at a position before the solvent evaporates. The edge surface of the downstream one of the two plates is provided with a cutting edge at the upstream side thereof. The cutting edge forms a gap with the surface sufficiently small that the foreign matter to be removed cannot enter the gap. Further, the gap is large enough to leave solvent film in a thickness of at least 0.2 microns after passing the two plates.
    • 一种用于从诸如照相胶片或磁带的柔性支撑件除去异物的装置。 在将溶剂施加到待除去异物的载体的表面上之后,支撑件通过至少两个平行的相邻的板,其横向于垂直于支撑件的运动方向延伸,板相对于 在溶剂蒸发之前的位置处的载体。 两个板的下游侧的边缘表面在其上游侧设置有切削刃。 切削刃与表面形成足够小的间隙,以使被除去的异物不能进入间隙。 此外,间隙足够大以使通过两个板之后的溶剂膜的厚度至少为0.2微米。
    • 35. 发明申请
    • CONTINUOUS CARBURIZING FURNACE
    • 连续加热炉
    • US20080258360A1
    • 2008-10-23
    • US11869829
    • 2007-10-10
    • Yasunori TanakaMasanori Minamiguchi
    • Yasunori TanakaMasanori Minamiguchi
    • C21D1/06
    • C21D9/667C21D9/0018C21D9/0056C21D9/0062F27B9/028F27B9/045F27B9/18F27B9/22F27D3/0032F27D2003/0065
    • The continuous carburizing furnace of this invention provides a furnace, a lift mechanism and a plurality of pushers. A furnace has a carburizing zone and a plurality of regions including a first region and a second region at the upstream side of said carburizing zone. The second region and the first region being disposed successively along a direction of conveyance of workpieces loaded upon a tray in this order. The lift mechanism lowers a tray in some region, among the plurality of regions, other than the region most to the upstream side in the direction of conveyance. A plurality of pushers includes a first pusher and a second pusher. The first pusher pushes a tray in said first region to said carburizing zone. The second pusher pushes a tray in said second region to said first region. A plurality of pushers are arranged the lower, the further towards the downstream side in said direction of conveyance is the position at which they push said trays.
    • 本发明的连续渗碳炉提供炉,升降机构和多个推动器。 炉具有渗碳区域和在所述渗碳区域的上游侧包括第一区域和第二区域的多个区域。 第二区域和第一区域依次沿着装载在托盘上的工件的输送方向依次布置。 升降机构在多个区域中的某个区域中降低托盘,除了在输送方向上最向上游侧的区域之外。 多个推动器包括第一推动器和第二推动器。 第一推动器将所述第一区域中的托盘推入所述渗碳区域。 第二推动器将所述第二区域中的托盘推动到所述第一区域。 多个推动器布置在下部,在所述输送方向上朝向下游侧进一步是其推动所述托盘的位置。
    • 36. 发明授权
    • Vacuum heat treating method and apparatus therefor
    • 真空热处理方法及其设备
    • US07357843B2
    • 2008-04-15
    • US10485826
    • 2001-11-30
    • Kazuyoshi YamaguchiYasunori Tanaka
    • Kazuyoshi YamaguchiYasunori Tanaka
    • C23C8/20C21D1/74
    • C23C8/30C23C8/20C23C8/22C23C8/32
    • The present invention provides a vacuum heat treating method, such as carburization, carbonitridation, high temperature carburization, high concentration carburization and the like, performed while supplying a mixed gas of ethylene gas and hydrogen gas under reduced pressures. The method includes: detecting a quantity of ethylene gas and that of hydrogen gas in a vacuum heat treating furnace (1); calculating an equivalent carbon concentration of atmosphere on the basis of the detected quantity of ethylene gas and that of hydrogen gas; and comparing the calculated value with a targeted value which is set on the basis of a material specification and required heat treatment performance of an object to be treated (a workpiece), to control quantities of ethylene gas and hydrogen gas supplied into the vacuum heat treating furnace (1) on the basis of a difference between the calculated value and the targeted value. A heat treatment quality required for the workpiece can be obtained with accuracy and reproducibility.
    • 本发明提供了在减压下供给乙烯气体和氢气的混合气体的同时进行渗碳,碳氮化,高温渗碳,高浓度渗碳等的真空热处理方法。 该方法包括:在真空热处理炉(1)中检测乙烯气体量和氢气量; 基于检测到的乙烯气体量和氢气的量来计算大气的等效碳浓度; 将计算出的值与根据材料规格设定的目标值和被处理物(工件)的要求的热处理性能进行比较,以控制提供给真空热处理的乙烯气体和氢气的量 基于计算值与目标值之差的炉(1)。 可以准确和重复地获得工件所需的热处理质量。
    • 40. 发明授权
    • Semiconductor integrated circuit for suppressing overshooting and ringing
    • 用于抑制过冲和振铃的半导体集成电路
    • US5680068A
    • 1997-10-21
    • US546108
    • 1995-10-20
    • Shinji OchiYasunori TanakaTomohiro Fujisaki
    • Shinji OchiYasunori TanakaTomohiro Fujisaki
    • H03K5/02H03K17/16H03K17/687H03K19/003H03K19/0185H03K19/094H03L5/00
    • H03K19/00361
    • There is provided a semiconductor integrated circuit including an output circuit having a first buffer section to which a first power supply voltage is applied and an input signal is supplied to amplify and output the input signal, and a second buffer section to which a second power supply voltage is applied and a signal output from said first buffer section is supplied to amplify and output the signal outside through an output terminal, a switching element which has two terminals respectively connected to said output terminal and a ground voltage terminal and receives a control signal to change a conductive resistance, and a bias circuit for receiving the input signal or a signal output from said first buffer section, generating a control signal, and supplying the control signal to said switching element to control the conductive resistance of said switching element so as not to allow a potential of said output terminal to exceed a predetermined value.
    • 提供了一种半导体集成电路,包括:输出电路,其具有施加第一电源电压的第一缓冲部分,并且提供输入信号以放大和输出输入信号;第二缓冲部分,第二电源 电压被施加,从第一缓冲器部分输出的信号通过输出端子放大并输出到外部,开关元件具有分别连接到所述输出端子的两个端子和接地电压端子,并接收控制信号 改变导电电阻;以及偏置电路,用于接收所述输入信号或从所述第一缓冲器部分输出的信号,产生控制信号,并将所述控制信号提供给所述开关元件,以控制所述开关元件的导电电阻,使得不 以允许所述输出端子的电位超过预定值。