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31. 发明申请

US20050161584A1 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US20050161584A1
公开(公告)日：2005-07-28
申请号：US10916590
申请日：2004-08-12
申请人： Syouji Tanaka , Ryohei Miyagawa , Toshiya Fujii , Yasuhiro Tanaka , Michihiro Yamagata , Hiroaki Okayama
发明人： Syouji Tanaka , Ryohei Miyagawa , Toshiya Fujii , Yasuhiro Tanaka , Michihiro Yamagata , Hiroaki Okayama
IPC分类号： G02B3/00 , H01L27/14 , H01L27/146 , H01L31/0232 , H01L31/10 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/00 , G11B7/135
CPC分类号： H01L27/14601 , H01L27/14603 , H01L27/14605 , H01L27/14625 , H01L27/14627 , H01L27/14685
摘要： A solid-state imaging device includes pixels 2 arranged two-dimensionally on a semiconductor substrate 1. In a predetermined area in each pixel is formed a light-sensitive area 3 for receiving incident light 11, and each pixel includes a photoelectric conversion portion 4 for converting the incident light into a signal charge. In at least some of the pixels, the center of the light-sensitive area is offset from the center of the pixel when seen from directly above a principal surface of the semiconductor substrate. Each pixel further includes a light-path change member 12a and 12b for deflecting incident light traveling toward the center of the pixel so as to be directed toward the center of the light-sensitive area. Thus, a solid-state imaging device simultaneously realizing the miniaturization of pixels and a high image quality is provided.
摘要翻译：固体摄像器件包括二维布置在半导体衬底1上的像素2。在每个像素中的预定区域中形成有用于接收入射光11的感光区域3，并且每个像素包括用于将入射光转换成信号电荷的光电转换部分4。在至少一些像素中，当从半导体衬底的主表面的正上方观察时，感光区域的中心偏离像素的中心。每个像素还包括光路改变构件12a和12b，用于偏转朝向像素的中心行进的入射光，以便朝向感光区域的中心。因此，提供了同时实现像素的小型化和高图像质量的固态成像装置。

32. 发明授权

US06528342B2 Solid state imaging apparatus, method of manufacturing the same and video system using such solid state imaging apparatus 有权
标题翻译：固态成像装置，其制造方法以及使用这种固态成像装置的视频系统
公开(公告)号：US06528342B2
公开(公告)日：2003-03-04
申请号：US09885071
申请日：2001-06-21
申请人： Ryohei Miyagawa , Hirofumi Yamashita , Michio Sasaki , Eiji Oba , Nagataka Tanaka , Keiji Mabuchi
发明人： Ryohei Miyagawa , Hirofumi Yamashita , Michio Sasaki , Eiji Oba , Nagataka Tanaka , Keiji Mabuchi
IPC分类号： H01L2100
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14621 , H01L27/14683
摘要： This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.
摘要翻译：本发明防止具有大量MOS传感器缺陷的LOCOS区域的端部耗尽，从而减少在LOCOS区域的端部部分的缺陷中发生的漏电流。在用于构成具有p型层的光电二极管的p型衬底的表面区域中形成n型层区域。通过氧化硅衬底的一部分，在硅衬底的表面区域中的p +型层上形成LOCOS区域作为器件分离区域。 n型层区域和LOCOS区域彼此分开预定距离。形成接触区域并与n型层区域分离距离等于MOS传感器的读出晶体管的栅电极的距离。布线层连接到接触区域。然后，形成平面化层以覆盖n型层区域，LOCOS区域，栅电极和布线层。

33. 发明授权

US06507365B1 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US06507365B1
公开(公告)日：2003-01-14
申请号：US09450749
申请日：1999-11-30
申请人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
发明人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
IPC分类号： H04N314
CPC分类号： H04N5/361 , H04N5/23274 , H04N5/2357 , H04N5/3452 , H04N5/3454 , H04N5/353 , H04N5/374
摘要： A solid-state imaging device with a variable (continuous) electronic shutter function comprises an imaging area where unit cells with photodiodes acting as pixels are arranged two-dimensionally, read lines for driving the read transistors in each pixel row, vertical selection lines for driving the vertical selection transistors in each pixel row, a vertical driving circuit for selectively driving vertical selection lines, vertical signal lines for outputting the signal from each unit cell in the pixel rows driven sequentially, and a row selection circuit for controlling the vertical driving circuit in such a manner that the vertical driving circuit drives the read transistors in each pixel row with the desired signal storage timing and signal read timing twice in that order and thereby drives the vertical selection transistors in the pixel row in synchronization with the signal read timing.
摘要翻译：具有可变（连续）电子快门功能的固态成像装置包括成像区域，其中以二维作为像素的光电二极管的单位单元被二维布置，用于驱动每个像素行中的读取晶体管的读取线，用于驱动的垂直选择线每个像素行中的垂直选择晶体管，用于选择性地驱动垂直选择线的垂直驱动电路，用于输出依次驱动的像素行中的每个单元的信号的垂直信号线和用于控制垂直驱动电路的行选择电路垂直驱动电路以期望的信号存储定时和信号读取定时以该顺序驱动每个像素行中的读取晶体管，从而与信号读取定时同步地驱动像素行中的垂直选择晶体管。

34. 发明授权

US07859587B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07859587B2
公开(公告)日：2010-12-28
申请号：US11723459
申请日：2007-03-20
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H04N5/225
CPC分类号： H04N5/335
摘要： In a solid-state image pickup device, it is difficult to match an optimum incidence angle corresponding to an image height of a pixel array region with light incidence characteristics of a camera lens, thereby causing image quality deterioration due to sensitivity shading. Respective microlenses are disposed in a two-dimensional manner, i.e., in a row and a column directions. In particular, the microlenses are disposed such that each side of a disposition region where the microlenses are disposed has a concave curve with respect to a line connecting adjacent vertexes of the disposition region. In other words, a distance AH (AV) between center points of a pair of facing sides of the disposition region is set to be smaller than a distance BH (BV) between neighboring vertexes of the disposition region.
摘要翻译：在固态图像拾取装置中，难以将与像素阵列区域的图像高度相对应的最佳入射角与相机透镜的光入射特性相匹配，从而导致由于灵敏度阴影引起的图像质量劣化。各个微透镜以二维方式设置，即以行和列方向布置。特别地，微透镜被布置成使得布置微透镜的布置区域的每一侧相对于连接配置区域的相邻顶点的线具有凹曲线。换句话说，配置区域的一对相对侧的中心点之间的距离AH（AV）被设定为小于配置区域的相邻顶点之间的距离BH（BV）。

35. 发明授权

US07777260B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07777260B2
公开(公告)日：2010-08-17
申请号：US12166736
申请日：2008-07-02
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/14627 , H01L27/14623 , H01L27/14636
摘要： A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.
摘要翻译：固态成像装置包括：配置有光接收部的摄像区域; 布置在所述光接收部分上的互连层，所述互连层包括具有开口的金属互连和第一绝缘膜; 在所述互连层上形成与所述光接收部分成一对一关系的内层透镜; 形成在所述互连层和所述内层透镜上的透明的第二绝缘膜; 与所述光接收部分成一对一关系地形成在所述第二绝缘膜上的顶部透镜，所述顶部透镜的上表面是凸曲面; 以及在顶部透镜上的透明膜，透明膜由折射率小于顶部透镜的折射率的材料形成。以这种方式，入射光的至少一部分的焦点可以位于半导体衬底之上。

36. 发明申请

US20100187582A1 SOLID-STATE IMAGING DEVICE HAVING TRANSMISSION GATES WHICH PASS OVER PART OF PHOTO DIODES WHEN SEEN FROM THE THICKNESS DIRECTION OF THE SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：当从半导体衬底的厚度方向观察到具有透光栅的透射栅的固态成像装置
公开(公告)号：US20100187582A1
公开(公告)日：2010-07-29
申请号：US12752624
申请日：2010-04-01
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603
摘要： A solid-state imaging device having a plurality of image pixels arranged along a main surface of a semiconductor substrate, wherein each of the plurality of image pixels includes a photodiode that converts incident light into an electric charge and a transmission gate that is formed so as to have a crossing area that partially passes over the photodiode when seen from the thickness direction of the semiconductor substrate. The transmission gate of the solid-state imaging device is formed in a manner that (i) a first region including a laminated body of a silicon film and a silicide film, and (ii) a second region that includes the silicon film and does not include the silicide film, both arranged along a main surface of the semiconductor substrate, and the second region in the transmission gate is formed in at least one part of the crossing area.
摘要翻译：一种固态成像装置，具有沿着半导体基板的主表面排列的多个图像像素，其中，所述多个图像像素中的每一个都包括将入射光转换成电荷的光电二极管和形成为具有从半导体基板的厚度方向观察时部分地越过光电二极管的交叉区域。固态成像装置的传输门形成为：（i）包括硅膜和硅化物膜的层叠体的第一区域，以及（ii）包含硅膜的第二区域，不包括硅膜包括沿着半导体衬底的主表面布置的硅化物膜，并且传输门中的第二区域形成在交叉区域的至少一部分中。

37. 发明授权

US07755150B2 MOS solid-state image pickup device and manufacturing method thereof 有权
标题翻译： MOS固体摄像装置及其制造方法
公开(公告)号：US07755150B2
公开(公告)日：2010-07-13
申请号：US11808042
申请日：2007-06-06
申请人： Emi Ohtsuka , Mikiya Uchida , Ryohei Miyagawa
发明人： Emi Ohtsuka , Mikiya Uchida , Ryohei Miyagawa
IPC分类号： H01L27/14
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14689
摘要： An N-type epitaxial layer 115, which is formed above an N-type semiconductor substrate 114 in each of a pixel region and a peripheral circuit region; a first P-type well 1 formed above the N-type epitaxial layer 115 in the pixel region; and light receiving regions 117, which are formed within the first P-type well 1 and each of which is a component of a photodiode, are included. The peripheral circuit region includes: second P-type wells 2, which are formed from a surface 200 of the peripheral circuit region to a desired depth and each of which is a component of an N-Channel MOS transistor; an N-type well 3 which is formed from the surface 200 of the peripheral circuit region to a desired depth and which is a component of a P-Channel MOS transistor; and a third P-type well 4 which is formed so as to have such a shape as to isolate the N-type well 3 from the N-type epitaxial layer 115 and which has a higher impurity concentration than that of the first P-type well 1.
摘要翻译：在像素区域和外围电路区域中的每一个中形成在N型半导体衬底114上方的N型外延层115; 形成在像素区域中的N型外延层115的上方的第一P型阱1; 并且包括形成在第一P型阱1内并且其每一个都是光电二极管的分量的光接收区域117。外围电路区域包括：第二P型阱2，其由外围电路区域的表面200形成为期望的深度，并且每个都是N沟道MOS晶体管的一部分; N型阱3，其由外围电路区域的表面200形成为期望的深度，并且是P沟道MOS晶体管的分量; 以及第三P型阱4，其形成为具有使N型阱3与N型外延层115隔离的杂质浓度比第一P型阱高的杂质浓度好1。

38. 发明授权

US07626622B2 Solid state image pickup device and camera using the same 有权
公开(公告)号：US07626622B2
公开(公告)日：2009-12-01
申请号：US10584883
申请日：2005-01-11
申请人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
发明人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H04N5/378
摘要： A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

39. 发明申请

US20090021619A1 Solid state image pickup device and camera using the same 有权
标题翻译：固态摄像装置和使用相机的相机
公开(公告)号：US20090021619A1
公开(公告)日：2009-01-22
申请号：US10584883
申请日：2005-01-11
申请人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
发明人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H04N5/378
摘要： A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.
摘要翻译：固态图像拾取装置110具有：二维排列的多个像素单元10，包括将光转换为电荷的光电转换单元（光电二极管PD）和将光转换成电荷的放大单元（放大器Q13）充电到电压并输出; 多个噪声信号去除单元（噪声消除单元40），其针对每列设置一个，并且去除包含在属于列的像素单元10的放大器Q31输出的电压中的噪声; 以及多个列放大单元（列放大器70），其放大从像素单元10的放大器Q13输出的电压，并将放大的电压输出到噪声消除单元40，并且能够以低功率提高灵敏度和降低噪声消费。

40. 发明申请

US20080173911A1 SOLID-STATE IMAGING DEVICE HAVING WIRING LAYER WHICH INCLUDES LAMINATION OF SILICIDE LAYER IN ORDER TO REDUCE WIRING RESISTANCE, AND MANUFACTURING METHOD FOR THE SAME 失效
标题翻译：具有包括层状硅酸盐层的层状结构的固态成像装置，以降低接线电阻及其制造方法
公开(公告)号：US20080173911A1
公开(公告)日：2008-07-24
申请号：US12015930
申请日：2008-01-17
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L31/0224 , H01L21/768
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14623 , H01L27/14636 , H01L27/14643
摘要： A silicide layer (first silicide layer, second silicide layer) is laminated on top laminate surfaces of gates of a transmission transistor and a reset transistor, respectively. Each of the first silicide layer and the second silicide layer respectively formed on each of the gates extends in a direction along the main surface of the semiconductor substrate among at least a portion of a plurality of image pixels, connecting gates with one another among the respective image pixels. On the other hand, a signal outputter is not in contact with any silicide layers, has the top laminate surface that is covered with an insulating layer, and is connected with other transistors via a metal wiring layer.
摘要翻译：硅化物层（第一硅化物层，第二硅化物层）分别层叠在透射晶体管和复位晶体管的栅极的顶层叠表面上。分别形成在每个栅极上的第一硅化物层和第二硅化物层中的每一个在多个图像像素的至少一部分中沿着半导体衬底的主表面的方向延伸，在相应的多个图像像素中彼此连接栅极图像像素。另一方面，信号输出器不与任何硅化物层接触，顶层叠表面被绝缘层覆盖，并且通过金属布线层与其它晶体管连接。

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