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31. 发明申请

US20110318894A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20110318894A1
公开(公告)日：2011-12-29
申请号：US13053511
申请日：2011-03-22
申请人： Hitoshi Kobayashi , Shinya Ikesaka
发明人： Hitoshi Kobayashi , Shinya Ikesaka
IPC分类号： H01L21/336
CPC分类号： H01L29/0865 , H01L21/2815 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66734
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a first semiconductor region of a second conductivity type on a semiconductor layer of a first conductivity type, forming a mask selectively opening a surface of the first semiconductor region, and forming a trench penetrating through the first semiconductor region to reach the semiconductor layer. The method can include exposing further a part of the surface of the first semiconductor region from the mask. The method can include forming a control electrode in the trench, and forming selectively a second semiconductor region of the first conductivity type on the surface of the first semiconductor region. The method can include removing the mask having the opening. The method can include forming selectively a third conductor region of the second conductivity type on the surface of the first semiconductor region.
摘要翻译：根据一个实施例，公开了一种用于制造半导体器件的方法。该方法可以包括在第一导电类型的半导体层上形成第二导电类型的第一半导体区域，形成选择性地打开第一半导体区域的表面的掩模，以及形成贯穿第一半导体区域的沟槽，以达到半导体层。该方法可以包括进一步从掩模暴露第一半导体区域的一部分表面。该方法可以包括在沟槽中形成控制电极，并且在第一半导体区域的表面上选择性地形成第一导电类型的第二半导体区域。该方法可以包括去除具有开口的掩模。该方法可以包括在第一半导体区域的表面上选择性地形成第二导电类型的第三导体区域。

32. 发明授权

US07642896B2 Locking system, game machine, and device management system 失效
标题翻译：锁定系统，游戏机和设备管理系统
公开(公告)号：US07642896B2
公开(公告)日：2010-01-05
申请号：US10517337
申请日：2003-08-22
申请人： Hitoshi Kobayashi
发明人： Hitoshi Kobayashi
IPC分类号： G06K19/00
CPC分类号： G07F17/3202 , G07C9/00111 , G07C9/00309 , G07C2009/00777 , G07F17/32 , G07F17/3216
摘要： An IC tag for monitoring opening/closing operation 86 is attached on the backside of the glass frame 111 at its upper right portion, and on a main body frame 110 opposing to the glass frame 111, an antenna for monitoring 68 is attached. An IC tag for monitoring opening/closing operation 186 is attached on the inside of the right frame of the wooden frame 112, and on the main body frame 111 opposing to the wooden frame 112, an antenna for monitoring 168 is attached. The distance between these antenna and IC tags is respectively set to about 3 mm in a state where the frames on which they are provided are closed. A R/W unit always polls the IC tags via the antennas. When the glass frame 111 or the main body frame 110 is opened and the distance between the antenna and the IC tag exceeds about 5 mm, the communication becomes unavailable and this state is immediately detected. An antenna for key 128 is buried above a keyhole 120. When a key incorporating an IC tag for key therein is inserted in the keyhole 120, the R/W unit reads the ID code of the IC tag. A solenoid for locking operation is turned on only when the read ID code is identical to the registered ID so as to pull a plunger for unlocking the frame.
摘要翻译：用于监视打开/关闭操作86的IC标签86附接在玻璃框架111的右上部的背面，并且在与玻璃框架111相对的主体框架110上，安装有用于监视的天线68的天线。用于监视打开/关闭操作186的IC标签被安装在木框架112的右框架的内侧上，并且在与木框架112相对的主体框架111上，安装有用于监视的天线168。这些天线和IC标签之间的距离在其设置的框架关闭的状态下分别设定为约3mm。 R / W单元总是通过天线轮询IC标签。当玻璃框架111或主体框架110打开并且天线和IC标签之间的距离超过5mm时，通信变得不可用，并且立即检测到该状态。钥匙128的天线被埋在钥孔120的上方。当将其中包含钥匙的IC标签的钥匙插入钥匙孔120时，R / W单元读取IC标签的ID码。只有当读取的ID代码与注册的ID相同时，才能打开用于锁定操作的螺线管，以便拉动用于解锁框架的柱塞。

33. 发明授权

US07439625B2 Circuit board 有权
标题翻译：电路板
公开(公告)号：US07439625B2
公开(公告)日：2008-10-21
申请号：US10580157
申请日：2004-11-19
申请人： Hitoshi Kobayashi , Mitsunori Nagashima
发明人： Hitoshi Kobayashi , Mitsunori Nagashima
IPC分类号： H01L23/48
CPC分类号： H05K3/4015 , H01L2924/0002 , H05K3/222 , H05K3/328 , H05K2201/10962 , H01L2924/00
摘要： A circuit board (A1) includes an insulative substrate (1), a conductive pad (4a) formed on the substrate, and a metal (3) bonded to the pad via a solder layer (6). The metal piece (3) has a welding portion (3a) to which an external-connection terminal (5) is welded. A gap (7) is provided between the welding portion (3a) and the substrate (1). The welding portion (3a) and the solder layer (6) are separated by the gap (7).
摘要翻译：电路板（A 1）包括绝缘基板（1），形成在基板上的导电焊盘（4a）和通过焊料层（6）接合到焊盘的金属（3）。金属片（3）具有焊接有外部连接端子（5）的焊接部（3a）。在焊接部（3a）和基板（1）之间设置间隙（7）。焊接部分（3a）和焊料层（6）被间隙（7）分开。

34. 发明申请

US20080218213A1 BIDIRECTIONAL LEVEL SHIFT CIRCUIT AND BIDIRECTIONAL BUS SYSTEM 失效
标题翻译：双向移位电路和双向总线系统
公开(公告)号：US20080218213A1
公开(公告)日：2008-09-11
申请号：US12042677
申请日：2008-03-05
申请人： Hitoshi Kobayashi , Keiichi Fujii
发明人： Hitoshi Kobayashi , Keiichi Fujii
IPC分类号： H03K19/0175
CPC分类号： H03K19/018521
摘要： A plurality of transistors are connected between an I2C bus operating at a first voltage level and an I2C bus operating at a second voltage level and a main control electrode of at least one transistor is connected to a first power supply terminal and a main control electrode of the other at least one transistor is connected to an intermediate level between the first voltage level and the second voltage level, whereby a withstand voltage required to a transistor of the bidirectional level shift circuit of the I2C bus can be lowered.
摘要翻译：多个晶体管连接在以第一电压电平工作的I + 2 C总线和以第二电压电平工作的I + 2 C总线和主控制电极至少一个晶体管连接到第一电源端子，并且另一个至少一个晶体管的主控制电极连接到第一电压电平和第二电压电平之间的中间电平，由此，晶体管所需的耐受电压可以降低I 2 C总线的双向电平移位电路。

35. 发明申请

US20080145659A1 PYROGENICALLY PRODUCED SILICON DIOXIDE POWDER 审中-公开
标题翻译：生产二氧化硅粉末
公开(公告)号：US20080145659A1
公开(公告)日：2008-06-19
申请号：US12017861
申请日：2008-01-22
申请人： Kai SCHUMACHER , Naruyasu Ishibashi , Hitoshi Kobayashi , Paul Brandl
发明人： Kai SCHUMACHER , Naruyasu Ishibashi , Hitoshi Kobayashi , Paul Brandl
IPC分类号： C01B33/12
CPC分类号： C01B33/183 , Y10T428/2982
摘要： Pyrogenically produced silicon dioxide powder in the form of aggregates of primary particles having a BET surface area of 300±25 m2/g, wherein the aggregates display an average surface area of 4800 to 6000 nm2, an average equivalent circle diameter (ECD) of 60 to 80 nm and an average circumference of 580 to 750 nm.It is produced by a pyrogenic process in which silicon tetrachloride and a maximum of up to 40 wt. % of a second silicon component comprising H3SiCl, H2SiCl2, HSiCl3, CH3SiCl3, (CH3)2SiCl2, (CH3)3SiCl and/or (n-C3H7)SiCl3 are mixed with primary air and a combustion gas and burnt into a reaction chamber, secondary air also being introduced into the reaction chamber, and the feed materials being chosen such that an adiabatic flame temperature of 1390 to 1450° C. is obtained.It can be used as a filler.
摘要翻译：以BET表面积为300±25m 2 / g的一次粒子的聚集体形式的热解生成的二氧化硅粉末，其中聚集体的平均表面积为4800〜6000nm， 2，平均当量圆直径（ECD）为60〜80nm，平均周长为580〜750nm。它是通过热解法生产的，其中四氯化硅和最多达40wt。％的包含H 3 SiCl，H 2 SiCl 2，HSiCl 3，CH，SUB的第二硅组分的％（CH 3）3 SiCl 3，（CH 3 3）2 SiCl 2，（CH 3） 3 N 3 SiCl 3和/或（n C 3 H 7）SiCl 3 3与初级空气和燃烧气体并燃烧到反应室中，二次空气也被引入反应室，并且进料选择为使得绝热火焰温度为1390至1450℃。它可以用作填料。

36. 发明申请

US20080048491A1 Brake Control System 审中-公开
标题翻译：制动控制系统
公开(公告)号：US20080048491A1
公开(公告)日：2008-02-28
申请号：US11834291
申请日：2007-08-06
申请人： Kenichiro MATSUBARA , Hitoshi Kobayashi , Toshiyuki Innami , Kimio Nishino , Toshiharu Sugawara , Akihiro Sato , Katsuhiko Wakabayashi
发明人： Kenichiro MATSUBARA , Hitoshi Kobayashi , Toshiyuki Innami , Kimio Nishino , Toshiharu Sugawara , Akihiro Sato , Katsuhiko Wakabayashi
IPC分类号： B60T11/20 , B60T8/92 , F16D65/14
CPC分类号： B60T8/3255 , B60T8/36 , B60T8/4072 , B60T8/885 , B60T17/22 , B60T2270/414
摘要： A brake control system includes a plurality of fluid channels communicating from a hydraulic pressure source to a reservoir for controlling brake hydraulic pressures supplied to respective brake calipers by a plurality of hydraulic pressure control valves arranged in the respective fluid channels, wherein valve drive circuits for controlling the hydraulic pressure control valves are provided, two power relays for supplying power are connected to the plurality of valve drive circuits and when all hydraulic pressure control valves arranged in one fluid channel are normally open valves which communicate the hydraulic pressure source to the reservoir when nonenergized, different power relays are used for at least two valve drive circuits in the valve drive circuit corresponding to all the hydraulic pressure control valves to thereby prevent a malfunction of one power relay from causing all brake hydraulic pressures to fall.
摘要翻译：制动控制系统包括多个液压通道，其从液压源连通到储存器，用于通过布置在各个流体通道中的多个液压控制阀控制供应到各个制动钳的制动液压，其中用于控制的阀驱动电路提供液压控制阀，两个用于供电的功率继电器连接到多个阀驱动电路，并且当布置在一个流体通道中的所有液压控制阀是通常打开的阀，当不通电时将液压源连通到储存器对于与所有液压控制阀对应的阀驱动回路中的至少两个阀驱动回路使用不同的功率继电器，从而防止一个动力继电器的故障导致所有制动液压下降。

37. 发明申请

US20070222284A1 Brake control system 审中-公开
标题翻译：制动控制系统
公开(公告)号：US20070222284A1
公开(公告)日：2007-09-27
申请号：US11657643
申请日：2007-01-25
申请人： Kenichiro Matsubara , Hitoshi Kobayashi , Toshiyuki Innami , Kimio Nishino , Toshiharu Sugawara
发明人： Kenichiro Matsubara , Hitoshi Kobayashi , Toshiyuki Innami , Kimio Nishino , Toshiharu Sugawara
IPC分类号： B60T8/88
CPC分类号： B60T8/885 , B60T13/586 , B60T17/18 , B60T2270/414
摘要： At least one of first and second actuator driving devices is supplied with electric power securely. When failure occurs in any one of main power line, auxiliary power line, first and second power supply lines and first and second relays, the first to third relays are controlled to be opened and closed so that failure part is separated or failure part is isolated from part where failure does not occur or supply of electric power to failure part is cut off or electric power is supplied to part to which electric power cannot be supplied.
摘要翻译：第一和第二致动器驱动装置中的至少一个被牢固地供给电力。当主电源线，辅助电源线，第一和第二电源线以及第一和第二继电器中的任何一个发生故障时，第一至第三继电器被控制为打开和关闭，使得故障部分被分离或故障部分被隔离从不发生故障的部分或者向故障部分供电的部分被切断或向不能供电的部分供电。

38. 发明授权

US07262477B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07262477B2
公开(公告)日：2007-08-28
申请号：US10694903
申请日：2003-10-29
申请人： Hideki Okumura , Hitoshi Kobayashi , Masanobu Tsuchitani , Akihiro Osawa , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
发明人： Hideki Okumura , Hitoshi Kobayashi , Masanobu Tsuchitani , Akihiro Osawa , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
IPC分类号： H01L21/8238 , H01L29/00
CPC分类号： H01L21/76224 , H01L21/316 , H01L21/31695 , H01L29/0634 , H01L29/0653 , H01L29/7802
摘要： There is provided a semiconductor device including a semiconductor substrate with a trench, and a particulate insulating layer filling at least a lower portion of the trench and containing insulating particles. The semiconductor device may further include a reflowable dielectric layer covering an upper surface of the particulate insulating layer, the insulating particles being stable at the melting point or the softening point of the reflowable dielectric layer.
摘要翻译：提供了一种包括具有沟槽的半导体衬底和填充至少沟槽的下部并且包含绝缘颗粒的颗粒绝缘层的半导体器件。半导体器件还可以包括覆盖颗粒绝缘层的上表面的可回流电介质层，绝缘颗粒在可回流电介质层的熔点或软化点是稳定的。

39. 发明授权

US07255843B2 Low viscosity-increment fumed-silica and its slurry 有权
标题翻译：低粘度增量热解法二氧化硅及其浆料
公开(公告)号：US07255843B2
公开(公告)日：2007-08-14
申请号：US10326542
申请日：2002-12-23
申请人： Hitoshi Kobayashi , Masamichi Murota , Hirokuni Shirono
发明人： Hitoshi Kobayashi , Masamichi Murota , Hirokuni Shirono
IPC分类号： C01B33/14 , C09C1/28 , C09D17/00
CPC分类号： C01B33/18 , C01P2006/12 , C01P2006/22
摘要： A fumed-silica, which can make a slurry having sufficient wettability to a polar liquid, excellent dispersibility, and low viscosity even in the high concentration, and a slurry thereof. A fumed-silica and its slurry are provided, wherein the water content is controlled so that a weight loss after drying Y, and a dynamic wetting rate to water Z, have specified values.
摘要翻译：可以使极性液体具有足够润湿性的浆料，即使高浓度也具有优异的分散性和低粘度的气相二氧化硅及其浆料。提供了一种热解法二氧化硅及其浆料，其中控制含水量使得干燥后的重量减少Y和对水Z的动态润湿速率具有规定值。

40. 发明申请

US20060023509A1 Nonvolatile memory device and data write method for nonvolatile memory device 有权
标题翻译：非易失性存储器件和非易失性存储器件的数据写入方法
公开(公告)号：US20060023509A1
公开(公告)日：2006-02-02
申请号：US11176324
申请日：2005-07-08
申请人： Satoru Kodaira , Hitoshi Kobayashi , Kimihiro Maemura
发明人： Satoru Kodaira , Hitoshi Kobayashi , Kimihiro Maemura
IPC分类号： G11C16/04
CPC分类号： G11C16/0433
摘要： A nonvolatile memory device, wherein each of memory cells includes one of nonvolatile memory elements and one of wordline switches, wherein each of the wordlines connects in common gate electrodes of the wordline switches of memory cells arranged in the row direction; wherein each of the bitlines connects in common the wordline switches of memory cells arranged in the column direction; and wherein one of the first control gate lines connects in common control gate electrodes of the nonvolatile memory elements of M memory cells in one of memory cell blocks (M is an integer equal to or greater than 2); and wherein, when writing data into a desired memory cell, the wordline switches of the memory cells are turned ON by applying a wordline write voltage to a wordlines corresponding to the desired memory cell, a bitline write voltage is applied to the bitlines connected to the memory cells, and a control gate line write voltage is applied to one of the first control gate lines disposed in the memory cell block.
摘要翻译：一种非易失性存储器件，其中每个存储器单元包括非易失性存储器元件和字线开关中的一个，其中每个字线连接在沿行方向布置的存储器单元的字线开关的公共栅电极中; 其中每个位线共同地连接在列方向上布置的存储器单元的字线开关; 并且其中一个第一控制栅极线连接在存储单元块之一中的M个存储单元的非易失性存储元件的公共控制栅极中（M为等于或大于2的整数）; 并且其中当将数据写入期望的存储单元时，通过将字线写入电压施加到对应于期望的存储单元的字线来使存储单元的字线切换为ON，位线写入电压被施加到连接到所述存储单元的位线存储单元和控制栅线写入电压被施加到设置在存储单元块中的第一控制栅极线之一。

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