专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20120119721A1 CIRCUIT ARRANGEMENT INCLUDING VOLTAGE SUPPLY CIRCUIT 有权
标题翻译：包括电压供电电路的电路布置
公开(公告)号：US20120119721A1
公开(公告)日：2012-05-17
申请号：US13359150
申请日：2012-01-26
申请人： Reinhold Bayerer , Peter Kanschat , Uwe Jansen
发明人： Reinhold Bayerer , Peter Kanschat , Uwe Jansen
IPC分类号： G05F1/10
CPC分类号： H03K17/0406
摘要： A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage.
摘要翻译：一种电路装置，包括具有负载路径和驱动端子的第一半导体开关元件。提供一种电压供给电路，包括与第一半导体开关元件的负载路径串联连接的电感和与电感并联连接的电容性电荷存储装置，具有第一和第二输出端子，提供电源电压。

32. 发明授权

US08164176B2 Semiconductor module arrangement 有权
标题翻译：半导体模块布置
公开(公告)号：US08164176B2
公开(公告)日：2012-04-24
申请号：US11551488
申请日：2006-10-20
申请人： Dirk Siepe , Reinhold Bayerer
发明人： Dirk Siepe , Reinhold Bayerer
IPC分类号： H01L23/15
CPC分类号： H01L23/3735 , H01L24/03 , H01L24/05 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/83 , H01L24/85 , H01L25/072 , H01L2224/04042 , H01L2224/05082 , H01L2224/05171 , H01L2224/05172 , H01L2224/05181 , H01L2224/05184 , H01L2224/05647 , H01L2224/05666 , H01L2224/32225 , H01L2224/32245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/48491 , H01L2224/48747 , H01L2224/48766 , H01L2224/48847 , H01L2224/48866 , H01L2224/49 , H01L2224/73265 , H01L2224/78313 , H01L2224/82105 , H01L2224/82106 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/8501 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/0105 , H01L2924/0106 , H01L2924/01068 , H01L2924/0107 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/13055 , H01L2924/15787 , H01L2924/2076 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2924/00015 , H01L2224/83205
摘要： A semiconductor arrangement has a silicon body with a first surface and a second surface and a thick metal layer arranged on at least one surface of the silicon body. The thickness of the thick metal-layer is at least 10 micrometers (μm).
摘要翻译：半导体装置具有硅体，其具有布置在硅体的至少一个表面上的第一表面和第二表面以及厚金属层。厚金属层的厚度为至少10微米（μm）。

33. 发明授权

US08154114B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US08154114B2
公开(公告)日：2012-04-10
申请号：US11834395
申请日：2007-08-06
申请人： Reinhold Bayerer
发明人： Reinhold Bayerer
IPC分类号： H01L23/12
CPC分类号： H01L23/3735 , C04B37/021 , C04B37/026 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/402 , C04B2237/407 , H01L23/3731 , H01L23/3736 , H01L24/28 , H01L24/29 , H01L24/34 , H01L24/37 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L25/165 , H01L2224/29339 , H01L2224/32145 , H01L2224/32225 , H01L2224/371 , H01L2224/37599 , H01L2224/45014 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/4813 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/48699 , H01L2224/4911 , H01L2224/49111 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/8385 , H01L2224/85205 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01068 , H01L2924/01082 , H01L2924/014 , H01L2924/0781 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H05K1/0306 , H05K1/053 , H05K3/4061 , H05K3/44 , H05K3/4614 , H05K3/462 , H05K3/4629 , H05K3/4641 , H05K2201/0355 , H05K2201/0379 , H05K2201/09554 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/00013 , H01L2224/83205 , H01L2224/85399 , H01L2224/05599
摘要： A power semiconductor module is disclosed. One embodiment includes a multilayer substrate having a plurality of metal layers and a plurality of ceramic layers, where the ceramic layers are located between the metal layers.
摘要翻译：公开了功率半导体模块。一个实施例包括具有多个金属层和多个陶瓷层的多层基板，其中陶瓷层位于金属层之间。

34. 发明申请

US20110075451A1 Power Semiconductor Module and Method for Operating a Power Semiconductor Module 有权
标题翻译：功率半导体模块和操作功率半导体模块的方法
公开(公告)号：US20110075451A1
公开(公告)日：2011-03-31
申请号：US12894758
申请日：2010-09-30
申请人： Reinhold Bayerer , Thilo Stolze
发明人： Reinhold Bayerer , Thilo Stolze
IPC分类号： H02M5/458 , H01L23/538
CPC分类号： H02M7/003 , H01L24/06 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L25/072 , H01L2224/04042 , H01L2224/05553 , H01L2224/05624 , H01L2224/05647 , H01L2224/29339 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48472 , H01L2224/48724 , H01L2224/48747 , H01L2224/48847 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/8381 , H01L2224/83825 , H01L2224/8384 , H01L2224/8385 , H01L2224/85 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/1301 , H01L2924/13033 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19107 , H01L2924/203 , H01L2924/3025 , Y10T428/24752 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2224/48824 , H01L2924/00015 , H01L2924/0002
摘要： A power semiconductor module is provided in which power semiconductor chips with an aluminum-based chip metallization and power semiconductor chips with a copper-based chip metallization are included in the same module, and operated at different barrier-layer temperatures during use.
摘要翻译：提供一种功率半导体模块，其中具有铝基芯片金属化的功率半导体芯片和具有铜基芯片金属化的功率半导体芯片被包括在同一模块中，并且在使用期间在不同的阻挡层温度下操作。

35. 发明授权

US07768337B2 IGBT-driver circuit for desaturated turn-off with high desaturation level 有权
标题翻译： IGBT驱动电路，用于去饱和关断，具有高饱和度
公开(公告)号：US07768337B2
公开(公告)日：2010-08-03
申请号：US12331577
申请日：2008-12-10
申请人： Reinhold Bayerer
发明人： Reinhold Bayerer
IPC分类号： H03K17/16
CPC分类号： H03K17/168 , H03K17/0406 , H03K17/0422 , H03K17/567 , H03K17/691 , H03K2217/0036
摘要： A driver circuit comprising an insulated gate bipolar transistor having a collector coupled to a voltage supply, an emitter coupled to a source of reference potential, and a gate configured to receive a control signal from a driver circuit, and a desaturation circuit conductively coupled between an insulated gate and a collector of the insulated gate bipolar transistor to desaturate the insulated gate. The desaturation circuit includes a series coupled bias voltage source, uni-directionally conducting element and switch.
摘要翻译：一种驱动器电路，包括绝缘栅双极晶体管，其具有耦合到电压源的集电极，耦合到参考电位源的发射极和被配置为从驱动器电路接收控制信号的栅极以及导电耦合在绝缘栅极和绝缘栅双极晶体管的集电极，使绝缘栅极去饱和。去饱和电路包括串联耦合偏置电压源，单向导电元件和开关。

36. 发明授权

US07701051B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US07701051B2
公开(公告)日：2010-04-20
申请号：US11234999
申请日：2005-09-26
申请人： Reinhold Bayerer , Markus Thoben
发明人： Reinhold Bayerer , Markus Thoben
IPC分类号： H01L23/12
CPC分类号： H01L23/5385 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/48227 , H01L2224/49111 , H01L2924/00014 , H01L2924/0102 , H01L2924/01068 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power semiconductor module (1) has power semiconductor components (2, 4, 6, 8, 10, 12) arranged on a substrate (14), at least one portion of which components is connected in parallel and arranged symmetrically on the substrate (14). A second conduction plane (24, 26) is provided for making contact with the power semiconductor components (2, 4, 6, 8, 10, 12). The second conduction plane is arranged in a manner electrically insulated from the substrate surface (16) above the surfaces of the power semiconductor components (2, 4, 6, 8, 10, 12) that are remote from the substrate surface (16).
摘要翻译：功率半导体模块（1）具有布置在基板（14）上的功率半导体部件（2,4,6,8,10,12），其中至少一部分部件并联连接并对称地布置在基板上 14）。提供第二导电平面（24,26）以与功率半导体部件（2,4,6,8,10,12）接触。第二导电平面以远离基板表面（16）的功率半导体部件（2,4,6,8,10,12）的表面之上与基板表面（16）电绝缘的方式布置。

37. 发明申请

US20090261472A1 Power Semiconductor Module with Pressure Element and Method for Fabricating a Power Semiconductor Module with a Pressure Element 有权
标题翻译：具有压力元件的功率半导体模块和用于制造具有压力元件的功率半导体模块的方法
公开(公告)号：US20090261472A1
公开(公告)日：2009-10-22
申请号：US12106486
申请日：2008-04-21
申请人： Reinhold Bayerer
发明人： Reinhold Bayerer
IPC分类号： H01L23/36 , H01L21/50
CPC分类号： H01L24/72 , H01L23/3735 , H01L23/4006 , H01L24/06 , H01L24/28 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/04042 , H01L2224/05552 , H01L2224/05554 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/0603 , H01L2224/06051 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/29339 , H01L2224/32014 , H01L2224/32225 , H01L2224/48091 , H01L2224/4813 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49175 , H01L2224/4945 , H01L2224/73265 , H01L2224/83801 , H01L2224/83805 , H01L2224/83825 , H01L2224/83851 , H01L2224/85191 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/013 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/0781 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/3511 , H01L2224/8382 , H01L2224/8384 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： The invention relates to a power semiconductor module comprising at least one power semiconductor chip, and comprising a pressure apparatus which exerts a pressure on the top side of the power semiconductor chip when the power semiconductor module is fixed to a heat sink. In addition, a bonding wire which is arranged distant from the pressure element, is bonded to the top side. The invention also relates to methods for fabricating a power semiconductor module, and for fabricating a power semiconductor arrangement comprising a power semiconductor module and a heat sink.
摘要翻译：本发明涉及一种功率半导体模块，其包括至少一个功率半导体芯片，并且包括当功率半导体模块固定到散热器时在功率半导体芯片的顶侧施加压力的压力装置。此外，离开压力元件布置的接合线接合到顶侧。本发明还涉及用于制造功率半导体模块的方法，以及用于制造包括功率半导体模块和散热器的功率半导体装置。

38. 发明申请

US20090153223A1 IGBT-DRIVER CIRCUIT FOR DESATURATED TURN-OFF WITH HIGH DESATURATION LEVEL 有权
标题翻译： IGBT驱动电路，具有高度精度的去饱和电压
公开(公告)号：US20090153223A1
公开(公告)日：2009-06-18
申请号：US12331577
申请日：2008-12-10
申请人： Reinhold Bayerer
发明人： Reinhold Bayerer
IPC分类号： H03K17/16
CPC分类号： H03K17/168 , H03K17/0406 , H03K17/0422 , H03K17/567 , H03K17/691 , H03K2217/0036
摘要： A driver circuit comprising an insulated gate bipolar transistor having a collector coupled to a voltage supply, an emitter coupled to a source of reference potential, and a gate configured to receive a control signal from a driver circuit, and a desaturation circuit conductively coupled between an insulated gate and a collector of the insulated gate bipolar transistor to desaturate the insulated gate. The desaturation circuit includes a series coupled bias voltage source, uni-directionally conducting element and switch.
摘要翻译：一种驱动器电路，包括绝缘栅双极晶体管，其具有耦合到电压源的集电极，耦合到参考电位源的发射极和被配置为从驱动器电路接收控制信号的栅极以及导电耦合在绝缘栅极和绝缘栅双极晶体管的集电极，使绝缘栅极去饱和。去饱和电路包括串联耦合偏置电压源，单向导电元件和开关。

39. 发明申请

US20090085219A1 POWER SEMICONDUCTOR ARRANGEMENT 有权
标题翻译：功率半导体器件布置
公开(公告)号：US20090085219A1
公开(公告)日：2009-04-02
申请号：US11862677
申请日：2007-09-27
申请人： Reinhold Bayerer
发明人： Reinhold Bayerer
IPC分类号： H01L23/52 , H01L21/50
CPC分类号： H01L25/072 , H01L24/28 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L25/18 , H01L2224/05001 , H01L2224/05073 , H01L2224/05624 , H01L2224/05647 , H01L2224/0603 , H01L2224/29339 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/83851 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01068 , H01L2924/01082 , H01L2924/014 , H01L2924/0781 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H05K7/1432 , H01L2924/00014 , H01L2924/00
摘要： A power semiconductor arrangement is provided that includes a power semiconductor chip being electrically connected to a set of plug-like elements with at least two plug-like elements and further including a sheet metal strip line including a set of openings receiving the first set of plug-like elements, where the set of openings in the sheet metal strip line and the set of plug-like elements establish a press fit connection.
摘要翻译：提供了一种功率半导体装置，其包括功率半导体芯片，其电连接到具有至少两个插塞状元件的一组插塞状元件，并且还包括金属带条线，所述金属带状线包括接收第一组插头的一组开口类元件，其中钣金带状线中的一组开口和一组插塞状元件建立压配合连接。

40. 发明授权

US07449801B2 Semiconductor circuit arrangement for controlling a high voltage or a current of high current intensity 有权
标题翻译：用于控制高电压或高电流强度的电流的半导体电路装置
公开(公告)号：US07449801B2
公开(公告)日：2008-11-11
申请号：US10994912
申请日：2004-11-22
申请人： Reinhold Bayerer
发明人： Reinhold Bayerer
IPC分类号： H01H79/00
CPC分类号： H03K17/107 , H01L2224/48091 , H03K17/122 , Y10T307/918 , H01L2924/00014
摘要： In the case of a semiconductor circuit arrangement for controlling a high voltage with a series circuit of semiconductor modules, the high voltage possibly being dropped between the ends of the series circuit, increased functional reliability is achieved by each semiconductor module having a parallel circuit of at least two components, at least one first component of which can be conducting or blocking, during normal operation, for that partial voltage of the high voltage which is applied to it, by the remaining component(s) of a parallel circuit blocking, during normal operation, at least when the first component blocks, and by each semiconductor module being set up in such a manner that, in the event of a functional disturbance in the first component, the remaining component(s) permanently change(s) into a conducting state.
摘要翻译：在用半导体模块的串联电路控制高电压的半导体电路装置的情况下，可能在串联电路的端部之间落下的高电压，由具有并联电路的每个半导体模块实现增加的功能可靠性在正常操作期间，在正常操作期间，至少一个第一分量可以导通或阻塞，其中施加到其上的高电压的分压由平行电路的其余部件在正常期间阻塞操作，至少当第一组件阻塞时，并且由每个半导体模块设置成使得在第一组件中的功能障碍的情况下，剩余组件永久地改变为导通州。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式