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31. 发明申请

US20080198648A1 WRITING METHOD FOR MAGNETIC MEMORY CELL AND MAGNETIC MEMORY ARRAY STRUCTURE 失效
标题翻译：磁记忆体和磁记忆阵列结构的写入方法
公开(公告)号：US20080198648A1
公开(公告)日：2008-08-21
申请号：US11762085
申请日：2007-06-13
申请人： Yuan-Jen Lee , Ming-Jer Kao
发明人： Yuan-Jen Lee , Ming-Jer Kao
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A writing method for a magnetic memory cell which has a magnetic free stack layer with a bi-directional easy axis. A magnetic X axis and a magnetic Y axis are taken as reference directions, and the bi-directional easy axis is substantially on the magnetic X axis. The method includes applying a first magnetic field in a first direction of the magnetic Y axis. Then, a second magnetic field added onto the first magnetic field is applied in a first direction of the magnetic X axis. Next, the application of the first magnetic field is terminated. Thereafter, a third magnetic field is applied on the magnetic Y axis in a second direction opposite to the first direction. The second magnetic field is terminated and the third magnetic field is terminated.
摘要翻译：一种具有双向易轴的无磁性堆叠层的磁存储单元的写入方法。磁X轴和磁Y轴作为基准方向，双向易轴基本上在磁X轴上。该方法包括在磁性Y轴的第一方向上施加第一磁场。然后，在磁性X轴的第一方向施加添加到第一磁场上的第二磁场。接下来，终止第一磁场的施加。此后，在与第一方向相反的第二方向上的磁性Y轴上施加第三磁场。第二磁场终止，第三磁场终止。

32. 发明授权

US07208808B2 Magnetic random access memory with lower switching field 失效
标题翻译：具有较低开关电场的磁性随机存取存储器
公开(公告)号：US07208808B2
公开(公告)日：2007-04-24
申请号：US11159137
申请日：2005-06-23
申请人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
发明人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
IPC分类号： H01L29/82 , H01L43/00 , H01L27/14 , H01L29/84 , H01L31/111
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
摘要翻译：提供具有较低开关电场的磁性随机存取存储器。存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。

33. 发明授权

US07515462B2 Writing method for magnetic memory cell and magnetic memory array structure 失效
标题翻译：磁存储单元和磁存储阵列结构的写入方法
公开(公告)号：US07515462B2
公开(公告)日：2009-04-07
申请号：US11762085
申请日：2007-06-13
申请人： Yuan-Jen Lee , Ming-Jer Kao
发明人： Yuan-Jen Lee , Ming-Jer Kao
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A writing method for a magnetic memory cell which has a magnetic free stack layer with a bi-directional easy axis. A magnetic X axis and a magnetic Y axis are taken as reference directions, and the bi-directional easy axis is substantially on the magnetic X axis. The method includes applying a first magnetic field in a first direction of the magnetic Y axis. Then, a second magnetic field added onto the first magnetic field is applied in a first direction of the magnetic X axis. Next, the application of the first magnetic field is terminated. Thereafter, a third magnetic field is applied on the magnetic Y axis in a second direction opposite to the first direction. The second magnetic field is terminated and the third magnetic field is terminated.
摘要翻译：一种具有双向易轴的无磁性堆叠层的磁存储单元的写入方法。磁X轴和磁Y轴作为基准方向，双向易轴基本上在磁X轴上。该方法包括在磁性Y轴的第一方向施加第一磁场。然后，在磁性X轴的第一方向施加添加到第一磁场上的第二磁场。接下来，终止第一磁场的施加。此后，在与第一方向相反的第二方向上的磁性Y轴上施加第三磁场。第二磁场终止，第三磁场终止。

34. 发明申请

US20060138509A1 Magnetic random access memory with lower switching field through indirect exchange coupling 审中-公开
标题翻译：磁性随机存取存储器通过间接交换耦合具有较低的开关电场
公开(公告)号：US20060138509A1
公开(公告)日：2006-06-29
申请号：US11155465
申请日：2005-06-20
申请人： Yuan-Jen Lee , Yung-Hung Wang , Lien-Chang Wang , Ming-Jer Kao
发明人： Yuan-Jen Lee , Yung-Hung Wang , Lien-Chang Wang , Ming-Jer Kao
IPC分类号： H01L27/108
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3281
摘要： A magnetic random access memory with lower switching field through indirect exchange coupling. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, a metal layer formed on the ferromagnetic free layer, and a second antiferromagnetic layer formed on the metal layer. The anisotropy axis of the second antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged in parallel. The net magnetic moment of the antiferromagnetic layer interface between the second antiferromagnetic layer and the metal layer is close to zero. The memory has the advantages of lowering the switching field of the ferromagnetic layer and lowering the writing current.
摘要翻译：通过间接交换耦合的具有较低开关电场的磁性随机存取存储器。存储器包括第一反铁磁层，形成在第一反铁磁性层上的被钉扎层，形成在钉扎层上的隧道阻挡层，形成在隧道势垒层上的铁磁自由层，形成在铁磁自由层上的金属层，以及形成在金属层上的第二反铁磁层。第二反铁磁性层和铁磁性层的各向异性轴与铁磁性层的各向异性轴平行排列。第二反铁磁层与金属层之间的反铁磁层界面的净磁矩接近零。存储器具有降低铁磁层的开关场和降低写入电流的优点。

35. 发明申请

US20060102971A1 Magnetic random access memory with lower switching field 失效
标题翻译：具有较低开关电场的磁性随机存取存储器
公开(公告)号：US20060102971A1
公开(公告)日：2006-05-18
申请号：US11159137
申请日：2005-06-23
申请人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
发明人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
IPC分类号： H01L43/00 , H01L29/82 , G11C11/22
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
摘要翻译：提供具有较低开关电场的磁性随机存取存储器。存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。

36. 发明申请

US20070056855A1 Method of making an electroplated interconnection wire of a composite of metal and carbon nanotubes 有权
标题翻译：制造金属和碳纳米管复合材料的电镀互连线的方法
公开(公告)号：US20070056855A1
公开(公告)日：2007-03-15
申请号：US11298523
申请日：2005-12-12
申请人： Po-Yuan Lo , Jung-Hua Wei , Bae-Horng Chen , Jih-Shun Chiang , Chian-Liang Hwang , Ming-Jer Kao
发明人： Po-Yuan Lo , Jung-Hua Wei , Bae-Horng Chen , Jih-Shun Chiang , Chian-Liang Hwang , Ming-Jer Kao
IPC分类号： C25D1/04
CPC分类号： C25D5/02 , C25D3/38 , C25D5/54
摘要： Method of making an electroplated interconnection wire of a composite of metal and carbon nanotubes is disclosed, including electroplating a substrate having a conductive baseline on a surface thereof in an electroplating bath containing a metal ion and carbon nanotubes, so that an electroplated interconnection wire of a composite of the metal and carbon nanotubes is formed on the conductive baseline. Alternatively, a method of the present invention includes preparing a dispersion of carbon nanotubes dispersed in an organic solvent, printing a baseline with the dispersion on a surface of a substrate, evaporating the organic solvent to obtain a conductive baseline, and electroplating the surface in an electroplating bath containing a metal ion, so that an electroplated interconnection wire of a composite of the metal and carbon nanotubes is formed on the conductive baseline.
摘要翻译：公开了一种制造金属和碳纳米管复合材料的电镀互连线的方法，包括在含有金属离子和碳纳米管的电镀浴中在其表面上电镀具有导电基线的基片，使得电镀互连线在导电基线上形成金属和碳纳米管的复合物。或者，本发明的方法包括制备分散在有机溶剂中的碳纳米管的分散体，将基质与分散体印刷在基材的表面上，蒸发有机溶剂以获得导电基线，并将表面电镀在含有金属离子的电镀浴，使得在导电基线上形成金属和碳纳米管的复合材料的电镀互连线。

37. 发明申请

US20050287788A1 Manufacturing method of nanowire array 审中-公开
标题翻译：纳米线阵列的制造方法
公开(公告)号：US20050287788A1
公开(公告)日：2005-12-29
申请号：US10914273
申请日：2004-08-09
申请人： Jeng-Hua Wei , Hung-Hsiang Wang , Po-Yuan Lo , Ming-Jer Kao
发明人： Jeng-Hua Wei , Hung-Hsiang Wang , Po-Yuan Lo , Ming-Jer Kao
IPC分类号： H01L21/00 , H01L21/31 , H01L21/44 , H01L21/469 , H01L21/4763 , H01L21/768 , H01L23/482
CPC分类号： H01L21/76838 , B82Y10/00 , B82Y30/00 , H01L23/4827 , H01L2924/0002 , H01L2924/00
摘要： This specification discloses a manufacturing method of nanowire array. The method includes the steps of: providing a substrate; forming an insulating layer on the substrate; forming a metal catalyst layer on the insulating layer by spin on glass (SOG), the metal catalyst being Au, Ag, or Pt; forming a covering layer on the metal catalyst layer by SOG; patternizing the covering layer exposed out of the metal catalyst layer; etching the exposed metal catalyst layer to form a patternized metal catalyst layer; and forming a plurality of nanowires in the patternized metal catalyst layer.
摘要翻译：本说明书公开了纳米线阵列的制造方法。该方法包括以下步骤：提供衬底; 在所述基板上形成绝缘层; 在玻璃（SOG）上通过旋转在绝缘层上形成金属催化剂层，金属催化剂为Au，Ag或Pt; 通过SOG在金属催化剂层上形成覆盖层; 使从金属催化剂层露出的覆盖层图形化; 蚀刻暴露的金属催化剂层以形成图案化的金属催化剂层; 并在图案化的金属催化剂层中形成多个纳米线。

38. 发明授权

US06962839B2 Apparatus and manufacturing process of carbon nanotube gate field effect transistor 失效
公开(公告)号：US06962839B2
公开(公告)日：2005-11-08
申请号：US10901091
申请日：2004-07-29
申请人： Jeng-Hua Wei , Hsin-Hui Chen , Ming-Jiunn Lai , Hung-Hsiang Wang , Ming-Jer Kao
发明人： Jeng-Hua Wei , Hsin-Hui Chen , Ming-Jiunn Lai , Hung-Hsiang Wang , Ming-Jer Kao
IPC分类号： H01L21/3205 , H01L21/337 , H01L21/4763 , H01L29/43 , H01L51/00 , H01L51/05 , H01L51/10 , H01L51/30 , H03K5/00 , H03K17/00
CPC分类号： H01L51/0541 , B82Y10/00 , H01L51/0021 , H01L51/0048 , H01L51/0052 , H01L51/102 , H01L51/105 , Y10S977/938
摘要： The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for decreasing the gate width greatly. The carbon nanotube has its own intrinsic characters of metal and semiconductor, so it can be the channel, connector or next-level gate of transistor. Furthermore, the transistor has the structure of exchangeable source and drain, and can be defined the specificity by outside wiring.

39. 发明申请

US20050233585A1 Metal nanoline process and applications on growth of aligned nanostructure thereof 失效
标题翻译：金属牛磺酸工艺及其对准纳米结构生长的应用
公开(公告)号：US20050233585A1
公开(公告)日：2005-10-20
申请号：US10968891
申请日：2004-10-21
申请人： Ming-Jiunn Lai , Jeng-Hua Wei , Hung-Hsiang Wang , Po-Yuan Lo , Ming-Jer Kao
发明人： Ming-Jiunn Lai , Jeng-Hua Wei , Hung-Hsiang Wang , Po-Yuan Lo , Ming-Jer Kao
IPC分类号： B01J23/74 , B01J37/02 , C01B31/02 , H01L21/44 , H01L21/768 , H01L29/06 , H01L51/00
CPC分类号： H01L29/0676 , B01J23/74 , B01J37/0238 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/36 , H01L21/76838 , H01L29/0665 , H01L29/0673 , H01L51/0021 , H01L51/0048 , Y10S977/742
摘要： A metal nanoline process and applications on growth of aligned nanostructures thereof. A nano-structure is provided with a substrate with at least one nanodimensional metal catalyst line disposed thereon and at least one carbon nanotube or silicon nanowire extending along an end of the metal catalyst line.
摘要翻译：一种金属牛磺酸方法及其对齐纳米结构生长的应用。纳米结构设置有具有设置在其上的至少一个纳米金属催化剂管线的衬底和沿着金属催化剂管线的端部延伸的至少一个碳纳米管或硅纳米线。

40. 发明授权

US07001805B2 Method for fabricating n-type carbon nanotube device 失效
标题翻译：制造n型碳纳米管器件的方法
公开(公告)号：US07001805B2
公开(公告)日：2006-02-21
申请号：US10233601
申请日：2002-09-04
申请人： Hung-Hsiang Wang , Jeng-Hua Wei , Ming-Jer Kao
发明人： Hung-Hsiang Wang , Jeng-Hua Wei , Ming-Jer Kao
IPC分类号： H01L21/8234
CPC分类号： H01L51/0541 , B82Y10/00 , H01L21/3185 , H01L51/002 , H01L51/0048 , H01L51/0052 , H01L51/0525 , H01L51/0545 , H01L51/107 , Y10S977/742 , Y10S977/847 , Y10S977/938
摘要： A method for fabricating an n-type carbon nanotube device, characterized in that thermal annealing and plasma-enhanced chemical vapor-phased deposition (PECVD) are employed to form a non-oxide gate layer on a carbon nanotube device. Moreover, the inherently p-type carbon nanotube can be used to fabricate an n-type carbon nanotube device with reliable device characteristics and high manufacturing compatibility.
摘要翻译：一种制造n型碳纳米管器件的方法，其特征在于，使用热退火和等离子体增强化学气相沉积（PECVD）在碳纳米管器件上形成非氧化物栅极层。此外，固有的p型碳纳米管可用于制造具有可靠的器件特性和高制造兼容性的n型碳纳米管器件。

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