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31. 发明授权

US06878568B1 CMOS imager and method of formation 有权
标题翻译： CMOS成像器和形成方法
公开(公告)号：US06878568B1
公开(公告)日：2005-04-12
申请号：US10632916
申请日：2003-08-04
申请人： Howard Rhodes , Chandra Mouli
发明人： Howard Rhodes , Chandra Mouli
IPC分类号： H01L21/00 , H01L27/146 , H01L31/0352 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035272
摘要： A deep implanted region of a first conductivity type located below a transistor array of a pixel sensor cell and adjacent a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The deep implanted region reduces surface leakage and dark current and increases the capacitance of the photodiode by acting as a reflective barrier to photo-generated charge in the doped region of the second conductivity type of the photodiode. The deep implanted region also provides improved charge transfer from the charge collection region of the photodiode to a floating diffusion region adjacent the gate of the transfer transistor.
摘要翻译：公开了一种位于像素传感器单元的晶体管阵列下方并且与像素传感器单元的第二导电类型的光电二极管的掺杂区相邻的第一导电类型的深度注入区域。深注入区域减小了表面泄漏和暗电流，并且通过在第二导电类型的光电二极管的掺杂区域中作为光生电荷的反射阻挡来增加光电二极管的电容。深注入区域还提供从光电二极管的电荷收集区域到与传输晶体管的栅极相邻的浮动扩散区域的改进的电荷转移。

32. 发明申请

US20050032295A1 Dual doped gates 审中-公开
标题翻译：双掺杂栅极
公开(公告)号：US20050032295A1
公开(公告)日：2005-02-10
申请号：US10931410
申请日：2004-08-31
申请人： Howard Rhodes
发明人： Howard Rhodes
IPC分类号： H01L21/265 , H01L21/8238
CPC分类号： H01L21/2652 , H01L21/823842 , H01L21/823892
摘要： A method of forming an integrated circuit dual gate structure using only one mask is disclosed. In one embodiment, a substrate is prepared for the fabrication of a dual gate structure, a first gate structure having an NWELL is formed without using a mask, and a second gate structure having a PWELL is formed using only one mask. In an alternate embodiment, a substrate is prepared for the fabrication of a dual gate structure, a first gate structure having a PWELL is formed without using a mask, and a second gate structure having an NWELL is formed using only one mask.
摘要翻译：公开了仅使用一个掩模形成集成电路双栅极结构的方法。在一个实施例中，制备用于制造双栅极结构的衬底，在不使用掩模的情况下形成具有NWELL的第一栅极结构，并且仅使用一个掩模形成具有PWELL的第二栅极结构。在替代实施例中，准备用于制造双栅极结构的衬底，在不使用掩模的情况下形成具有PWELL的第一栅极结构，并且仅使用一个掩模形成具有NWELL的第二栅极结构。

33. 发明授权

US6083358A Multiple species sputtering for improved bottom coverage and improved sputter rate 失效
标题翻译：用于改善底部覆盖和改善溅射速率的多种溅射
公开(公告)号：US6083358A
公开(公告)日：2000-07-04
申请号：US53354
申请日：1998-04-01
申请人： P. J. Ireland , Howard Rhodes , Sujit Sharan , Sukesh Sandhu , Tim O'Brien , Tim Johnson
发明人： P. J. Ireland , Howard Rhodes , Sujit Sharan , Sukesh Sandhu , Tim O'Brien , Tim Johnson
IPC分类号： C23C14/04 , C23C14/35 , H01L21/762 , H01L21/768 , C23C14/34
CPC分类号： C23C14/35 , C23C14/046 , H01L21/762 , H01L21/76877
摘要： An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.
摘要翻译：改进的溅射工艺通过以低质量离子和高质量离子轰击靶，通过以低质量离子为主来增加溅射通量对目标表面的垂直度，用低质量和高质量注入离子填充目标，并引起目标原子喷出作为高质量入射离子的结果具有更高的垂直或近似垂直喷射的概率。一种替代的改进的溅射工艺用低和高质量离子轰击靶，以高质量离子为主，导致比单独使用高质量或低质量物质可实现的更高的溅射速率。在任一过程中，作为高质量或低质量物质，具有比标准物质更低的电离能的物质允许减压等离子体，导致溅射通量的较少散射。也可以使用低电离能种来在沉积期间通过单一物质在溅射之前帮助击打等离子体。

34. 发明申请

US20130256822A1 METHOD AND DEVICE WITH ENHANCED ION DOPING 审中-公开
标题翻译：具有增强离子浓度的方法和装置
公开(公告)号：US20130256822A1
公开(公告)日：2013-10-03
申请号：US13433002
申请日：2012-03-28
申请人： Gang Chen , Duli Mao , Hsin-Chih Tai , Howard Rhodes
发明人： Gang Chen , Duli Mao , Hsin-Chih Tai , Howard Rhodes
IPC分类号： H01L31/153 , H01L31/18
CPC分类号： H01L27/14632 , H01L27/14687 , H01L27/14689
摘要： Techniques for providing a pixel cell which exhibits improved doping in a semiconductor substrate. In an embodiment, a first doping is performed through a backside of the semiconductor substrate. After the first doping, the semiconductor substrate is thinned to expose a front side which is opposite of the backside. In another embodiment, a second doping is performed through the exposed front side of the thinned semiconductor substrate to form at least part of a pixel cell structure.
摘要翻译：用于提供在半导体衬底中表现出改进的掺杂的像素单元的技术。在一个实施例中，通过半导体衬底的背面执行第一掺杂。在第一掺杂之后，半导体衬底变薄以暴露与背面相反的正面。在另一个实施例中，通过经稀释的半导体衬底的暴露的前侧进行第二掺杂以形成像素单元结构的至少一部分。

35. 发明申请

US20130056800A1 Image Sensor With Reduced Noise By Blocking Nitridation Using Photoresist 有权
标题翻译：使用光刻胶阻挡氮化，降低噪音的图像传感器
公开(公告)号：US20130056800A1
公开(公告)日：2013-03-07
申请号：US13227400
申请日：2011-09-07
申请人： Jeong-Ho Lyu , Sohei Manabe , Howard Rhodes
发明人： Jeong-Ho Lyu , Sohei Manabe , Howard Rhodes
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L27/14601 , H01L27/14612 , H01L27/14614 , H01L27/14638 , H01L27/1464 , H01L27/14643 , H01L27/14683
摘要： An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, a method includes forming a first and second gate oxide layer over a substrate, forming a layer of photoresist over the first gate oxide layer, applying nitridation to the photoresist and the second gate oxide layer such that the first gate oxide layer is protected from the nitridation by the photoresist, and forming a polysilicon gate over the first and second gate oxide layers.
摘要翻译：描述了一种图像传感器，其中成像像素通过在选定的区域中阻挡氮化而具有降低的噪声。在一个示例中，一种方法包括在衬底上形成第一和第二栅极氧化物层，在第一栅极氧化物层上形成光致抗蚀剂层，向光致抗蚀剂和第二栅极氧化物层施加氮化，使得第一栅极氧化物层为防止光致抗蚀剂的氮化，并在第一和第二栅极氧化物层上形成多晶硅栅极。

36. 发明授权

US07745858B2 Photodiode with self-aligned implants for high quantum efficiency and method of formation 有权
标题翻译：具有自对准植入物的光电二极管，用于高量子效率和形成方法
公开(公告)号：US07745858B2
公开(公告)日：2010-06-29
申请号：US11636979
申请日：2006-12-12
申请人： Chandra Mouli , Howard Rhodes
发明人： Chandra Mouli , Howard Rhodes
IPC分类号： H01L31/062
CPC分类号： H01L27/14601 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The pinned surface layer is formed by employing the same mask level as the one employed for the formation of the photodiode region, and then implanting dopants at angles other than zero degrees.
摘要翻译：公开了一种具有由自对准倾斜植入物形成的钉扎表面层的钉扎光电二极管。可以调整植入物的角度以在被钉扎表面层和像素传感器单元的传送门的电活动区域之间提供适当的偏移。被钉扎表面层通过采用与用于形成光电二极管区域的掩模级别相同的掩模级，然后以零度以外的角度注入掺杂剂来形成。

37. 发明授权

US07525134B2 CMOS imager pixel designs 有权
标题翻译： CMOS成像器像素设计
公开(公告)号：US07525134B2
公开(公告)日：2009-04-28
申请号：US11488845
申请日：2006-07-19
申请人： Howard Rhodes , Jeff McKee
发明人： Howard Rhodes , Jeff McKee
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609
摘要： A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.
摘要翻译：公开了连接到CMOS成像器的各种光敏元件和/或电元件的电荷存储电容器以及形成方法。电荷存储电容器可以完全在CMOS成像器的场氧化物区域上形成，整个在像素传感器单元的有效区域上，或部分地在场氧化物区域上，部分地在像素传感器单元的有源像素区域上形成。

38. 发明授权

US07391066B2 Imager floating diffusion region and process for forming same 有权
公开(公告)号：US07391066B2
公开(公告)日：2008-06-24
申请号：US10422965
申请日：2003-04-25
申请人： Howard Rhodes
发明人： Howard Rhodes
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609
摘要： The present invention provides an imager device with a floating diffusion region resistant to charge leakage. The floating diffusion region is formed having a first doped region and a second doped region which has a higher concentration of dopants than the first doped region. The floating diffusion region is resistant to charge leakage while maintaining good contact to a conductor connected to a gate of a source follower transistor.

39. 发明申请

US20080089647A1 RESONATOR FOR THERMO OPTIC DEVICE 有权
标题翻译：热电偶装置谐振器
公开(公告)号：US20080089647A1
公开(公告)日：2008-04-17
申请号：US11951796
申请日：2007-12-06
申请人： Gurtej Sandhu , Guy Blalock , Howard Rhodes
发明人： Gurtej Sandhu , Guy Blalock , Howard Rhodes
IPC分类号： G02B6/26
CPC分类号： G02B6/132 , G02B6/12004 , G02B6/12007 , G02B6/136 , G02F1/011 , G02F1/0147 , G02F2203/15
摘要： A resonator for thermo optic devices is formed in the same process steps as a waveguide and is formed in a depression of a lower cladding while the waveguide is formed on a surface of the lower cladding. Since upper surfaces of the resonator and waveguide are substantially coplanar, the aspect ratio, as between the waveguide and resonator in an area where the waveguide and resonator front one another, decreases thereby increasing the bandwidth of the resonator. The depression is formed by photomasking and etching the lower cladding before forming the resonator and waveguide. Pluralities of resonators are also taught that are formed in a plurality of depressions of the lower cladding. To decrease resonator bandwidth, waveguide(s) are formed in the depression(s) of the lower cladding while the resonator is formed on the surface. Thermo optic devices formed with these resonators are also taught.
摘要翻译：用于热光器件的谐振器以与波导相同的工艺步骤形成，并且形成在下包层的凹陷中，同时波导形成在下包层的表面上。由于谐振器和波导的上表面基本上是共面的，因此在波导和谐振器彼此前向的区域中的波导和谐振器之间的纵横比减小，从而增加了谐振器的带宽。在形成谐振器和波导之前，通过光掩模和蚀刻下部包层形成凹陷。还教导了形成在下部包层的多个凹部中的多个谐振器。为了减小谐振器带宽，当在表面上形成谐振器时，在下包层的凹陷中形成波导。还教导了用这些谐振器形成的热光器件。

40. 发明授权

US07326607B2 Imager floating diffusion region and process for forming same 有权
标题翻译：成像器浮动扩散区域及其形成过程
公开(公告)号：US07326607B2
公开(公告)日：2008-02-05
申请号：US11043998
申请日：2005-01-28
申请人： Howard Rhodes
发明人： Howard Rhodes
IPC分类号： H01L21/8238
CPC分类号： G01B3/1056
摘要： The present invention provides an imager device with a floating diffusion region resistant to charge leakage. The floating diffusion region is formed having a first doped region and a second doped region which has a higher concentration of dopants than the first doped region. The floating diffusion region is resistant to charge leakage while maintaining good contact to a conductor connected to a gate of a source follower transistor.
摘要翻译：本发明提供了具有抵抗电荷泄漏的浮动扩散区的成像器装置。浮置扩散区域形成为具有第一掺杂区域和具有比第一掺杂区域更高的掺杂浓度的第二掺杂区域。浮动扩散区域抵抗电荷泄漏，同时保持与连接到源极跟随器晶体管的栅极的导体良好的接触。

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