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31. 发明授权

US6141072A System and method for efficient manufacturing of liquid crystal displays 失效
公开(公告)号：US6141072A
公开(公告)日：2000-10-31
申请号：US54188
申请日：1998-04-02
申请人： Timothy J. Drabik , Paul A. Kohl
发明人： Timothy J. Drabik , Paul A. Kohl
IPC分类号： G02F1/1341 , G02F1/1333 , G02F1/1339 , G02F1/1345 , B23P15/00 , C03C25/00 , C30B33/00
CPC分类号： G02F1/13394 , G02F1/133377
摘要： The present invention enables efficient microfabrication of a fully integrated liquid crystal display device. Initially, a sacrificial layer is formed on a substrate that has conductive pads connected thereto. The sacrificial layer is patterned, and portions of the sacrificial layer are removed to expose portions of the underlying layer supporting the sacrificial layer. Then, a permeable layer is formed on the sacrificial layer, thereby filling in the space vacated by the removed potions of the sacrificial layer. The structure is heated and the material of the sacrificial layer is allowed to dissolve into and dissipate through the permeable layer in order to leave a cavity. Once the sacrificial layer is removed, the permeable layer is supported by the portion of the permeable layer filling in the space vacated by the removed portions of the sacrificial layer. Accordingly, a monolithic liquid crystal display is easily and reliably formed without having to etch an opening in the structure to allow the sacrificial material to egress from the structure and without having to separately attach mechanical components to each liquid crystal display manufactured.

32. 发明授权

US5431766A System for the photoelectrochemical etching of silicon in an anhydrous environment 失效
标题翻译：在无水环境下进行硅光电化学蚀刻的系统
公开(公告)号：US5431766A
公开(公告)日：1995-07-11
申请号：US278658
申请日：1994-09-02
申请人： Eric K. Propst , Paul A. Kohl
发明人： Eric K. Propst , Paul A. Kohl
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063 , C23F1/02
CPC分类号： H01L21/3063 , C25F3/12 , C25F3/14
摘要： The photoelectrochemical oxidation and dissolution of silicon (Si) is performed in the absence of water and oxygen. Etch rates and photocurrents in an anhydrous HF-acetonitrile (MeCN) solution are directly proportional to light intensity up to at least 600 mW/cm2, producing a spatially selective etch rate of greater than 4 .mu.m/min. Four electron transfer reactions per silicon molecule occur with a quantum yield greater than 3.3 due to electron injection from high energy reaction intermediates. Further, the electrochemical oxidation of p-doped silicon in HF-MeCN results in the formation of porous silicon which electroluminescence in an aqueous solution. In an aprotic electrolyte, where tetrabutylammonium tetrafluoroborate (TBAFB) is used as both the supporting electrolyte and source of fluoride in MeCN, photo-induced etching of n-doped silicon occurs at quantum efficiency of 1.9. This indicates that the oxidation and dissolution mechanism of Si in MeCN can occur without protons.
摘要翻译：硅（Si）的光电化学氧化和溶解在没有水和氧的情况下进行。在无水HF-乙腈（MeCN）溶液中的蚀刻速率和光电流与高达至少600mW / cm 2的光强度成正比，产生大于4μm/ min的空间选择性蚀刻速率。由于高能反应中间体的电子注入，每硅分子发生四个电子转移反应，其量子产率大于3.3。此外，p-doped硅在HF-MeCN中的电化学氧化导致在水溶液中电致发光的多孔硅的形成。在非质子电解质中，使用四丁基铵四氟硼酸盐（TBAFB）作为MeCN中的支持电解质和氟化物源，对n掺杂硅的光致蚀刻以量子效率为1.9发生。这表明Si在MeCN中的氧化和溶解机理不会发生质子。

33. 发明授权

US4730198A Aligning arrays of optoelectronic devices to arrays of optical fibers 失效
标题翻译：将光电器件的阵列对准到光纤阵列
公开(公告)号：US4730198A
公开(公告)日：1988-03-08
申请号：US674681
申请日：1984-11-26
申请人： Michael G. Brown , Stephen R. Forrest , Daniel R. Kaplan , Paul A. Kohl , Yusuke Ota , Harvey S. Trop
发明人： Michael G. Brown , Stephen R. Forrest , Daniel R. Kaplan , Paul A. Kohl , Yusuke Ota , Harvey S. Trop
IPC分类号： G02B6/36 , G02B6/38 , G02B6/42 , H01L27/146
CPC分类号： H01L27/14643 , G02B6/3636 , G02B6/3839 , G02B6/4249 , G02B6/3652 , G02B6/3692
摘要： Linear arrays of optical fibers are aligned to linear arrays of optoelectronic devices (e.g., photodiodes, diode lasers or LEDs) formed on an elongated chip. The alignment procedure results in a subassembly which includes fiber segments embedded between V-groove mounting blocks and the device array chip affixed to an end face of the blocks.
摘要翻译：光纤的线性阵列与形成在细长芯片上的光电子器件（例如，光电二极管，二极管激光器或LED）的线性阵列对准。对准过程产生一个子组件，其中包括嵌入在V形槽安装块之间的光纤段和固定在块的端面上的器件阵列芯片。

34. 发明授权

US4482443A Photoelectrochemical etching of n-type silicon 失效
标题翻译： n型硅光电化学蚀刻
公开(公告)号：US4482443A
公开(公告)日：1984-11-13
申请号：US567050
申请日：1983-12-30
申请人： Duane E. Bacon , Jeffrey R. Bessette , Paul A. Kohl
发明人： Duane E. Bacon , Jeffrey R. Bessette , Paul A. Kohl
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063
CPC分类号： C25F3/14 , C25F3/12 , H01L21/3063
摘要： Photoelectrochemical processing of semiconductors is highly desirable because of its versatility and simplicity. The invention is a photoelectrochemical etching procedure for n-type silicon in which an alcohol based solution of hydrofluoric acid is used as the electrolyte. This procedure is useful for the fabrication of a variety of silicon devices.
摘要翻译：由于其多功能性和简单性，半导体的光电化学处理是非常需要的。本发明是使用氢氟酸的醇系溶液作为电解质的n型硅的光电化学蚀刻工序。该程序对于制造各种硅器件是有用的。

35. 发明授权

US4482442A Photoelectrochemical etching of n-type gallium arsenide 失效
标题翻译： n型砷化镓的光电化学蚀刻
公开(公告)号：US4482442A
公开(公告)日：1984-11-13
申请号：US544993
申请日：1983-10-24
申请人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
发明人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063
CPC分类号： C25F3/12 , C25F3/14 , H01L21/30635 , Y10T428/21 , Y10T428/31504
摘要： A process is described for photoelectrochemically etching n-type gallium arsenide and closely related compound semiconductors such as gallium aluminum arsenide and gallium arsenide phosphide. Such a process is advantageous because the etching is confined to where light is incident to the surface of the semiconductor. In addition, the shape of the configuration etched out of the semiconductor can be controlled by the light incident on the surface of the semiconductor. For example, undercutting can be minimized by use of parallel rays incident on the surface of the semiconductor to be etched.
摘要翻译：描述了用于光电化学蚀刻n型砷化镓和紧密相关的化合物半导体如镓砷化镓和砷化镓磷化物的方法。这种方法是有利的，因为蚀刻被限制在光入射到半导体的表面的地方。此外，可以通过入射在半导体表面上的光来控制从半导体中蚀刻出的构造的形状。例如，可以通过使用入射在要蚀刻的半导体的表面上的平行光线来最小化底切。

36. 发明授权

US4376018A Electrodeposition of nickel 失效
标题翻译：电沉积镍
公开(公告)号：US4376018A
公开(公告)日：1983-03-08
申请号：US307900
申请日：1981-10-02
申请人： Paul A. Kohl
发明人： Paul A. Kohl
IPC分类号： C25D3/02 , C25D3/18
CPC分类号： C25D3/18 , C25D3/02
摘要： Nickel is electroplated from a bath comprising such additives as phenolphthalein, lactones, lactams, cyclic sulfate esters, cyclic imides and cyclic oxazolinones. These additives permit high plating rates, smooth bright finishes, freedom from dendritic growth and constant plating thicknesses over wide areas.
摘要翻译：镍从包含酚酞，内酯，内酰胺，环硫酸酯，环状酰亚胺和环状恶唑啉酮等添加剂的浴中电镀。这些添加剂允许高电镀速率，光亮的光亮表面，不受树枝状生长和广泛区域的恒定电镀厚度。

37. 发明授权

US4229269A Spray cell for selective metal deposition or removal 失效
标题翻译：用于选择性金属沉积或去除的喷雾池
公开(公告)号：US4229269A
公开(公告)日：1980-10-21
申请号：US80401
申请日：1979-10-01
申请人： Reginald R. Buckley , Paul A. Kohl
发明人： Reginald R. Buckley , Paul A. Kohl
IPC分类号： C25D5/02 , C25D5/08 , C25F3/14 , H05K3/24 , C25C1/20 , C25C7/00
CPC分类号： C25D5/08 , C25D5/02 , C25F3/14 , H05K3/241
摘要： A spray plating method is shown wherein a multiplicity of spray nozzles mounted on a feed pipe direct a high velocity spray at an article to be plated. The spray is deflected onto portions of the article by metal deflectors located near the article. The deflectors serve as the anode of the plating process. This results in a high current density and a high plating rate. The method is advantageously used for hard plating gold onto connector pins or other articles on a continuous strip-plating line. In another application, metal may be selectively removed from an article. Different portions of an article may have different amounts of metal deposited or removed.
摘要翻译：示出了喷镀方法，其中安装在进料管上的多个喷嘴在待镀制品上引导高速喷雾。喷雾通过位于物品附近的金属偏转器偏转到制品的部分上。偏转器用作电镀工艺的阳极。这导致高电流密度和高电镀速率。该方法有利地用于将金硬镀到连接器针或连续带电镀线上的其它制品上。在另一种应用中，可以从制品中选择性地去除金属。制品的不同部分可能具有不同量的金属沉积或去除。

38. 发明申请

US20130011784A1 Photosensitive Sacrificial Polymer with Low Residue 有权
标题翻译：低残留光敏牺牲聚合物
公开(公告)号：US20130011784A1
公开(公告)日：2013-01-10
申请号：US13537556
申请日：2012-06-29
申请人： Paul A. Kohl , Yu-Chun Chen
发明人： Paul A. Kohl , Yu-Chun Chen
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/095 , B81B2203/0315 , B81C1/00476 , B81C2201/0108 , G03F7/0045 , G03F7/039 , G03F7/168 , G03F7/36 , G03F7/38 , G03F7/40 , H01L21/7682
摘要： Embodiments according to the present invention relate generally to PAG bilayer and PAG-doped unilayer structures using sacrificial polymer layers that incorporate a photoacid generator having a concentration gradient therein. Said PAG concentration being higher in a upper portion of such structures than in a lower portion thereof. Embodiments according to the present invention also relate to a method of using such bilayers and unilayers to form microelectronic structures having a three-dimensional space, and methods of decomposition of the sacrificial polymer within the aforementioned layers.
摘要翻译：根据本发明的实施方案一般涉及使用掺入其中具有浓度梯度的光致酸发生器的牺牲聚合物层的PAG双层和PAG掺杂的单层结构。所述PAG浓度在这种结构的上部比在其下部更高。根据本发明的实施方案还涉及使用这种双层和单层以形成具有三维空间的微电子结构的方法，以及在上述层内分解牺牲聚合物的方法。

39. 发明申请

US20110136932A1 Polymers, Methods Of Use Thereof, And Methods Of Decomposition Thereof 有权
标题翻译：聚合物，其使用方法及其分解方法
公开(公告)号：US20110136932A1
公开(公告)日：2011-06-09
申请号：US12913807
申请日：2010-10-28
申请人： Paul A. Kohl , Sue Ann Bidstrup-Allen , Clifford Lee Henderson
发明人： Paul A. Kohl , Sue Ann Bidstrup-Allen , Clifford Lee Henderson
IPC分类号： C08F10/14
CPC分类号： G03F7/004 , B81B2201/058 , B81B2203/0338 , B81B2203/0384 , B81C1/00103 , B81C2201/0108 , C08J3/28 , C08K5/0041 , G03F7/40 , Y10T428/24479
摘要： Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymer, among others, includes, a photodefinable polymer having a sacrificial polymer and a photoinitiator.
摘要翻译：提供聚合物，其使用方法及其分解方法。一个示例性聚合物，其中包括具有牺牲聚合物和光引发剂的光可定义聚合物。

40. 发明授权

US07745100B2 Polymers, methods of use thereof, and methods of decomposition thereof 有权
公开(公告)号：US07745100B2
公开(公告)日：2010-06-29
申请号：US11451144
申请日：2006-06-12
申请人： Paul A. Kohl , SueAnn Bidstrup Allen , Xiaoqun Wu , Clifford Lee Henderson
发明人： Paul A. Kohl , SueAnn Bidstrup Allen , Xiaoqun Wu , Clifford Lee Henderson
IPC分类号： G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38 , G03F7/40
CPC分类号： G03F7/004 , B81B2201/058 , B81B2203/0338 , B81B2203/0384 , B81C1/00103 , B81C2201/0108 , C08J3/28 , C08K5/0041 , G03F7/40 , Y10T428/24479
摘要： Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymer, among others, includes, a photodefinable polymer having a sacrificial polymer and a photoinitiator.

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