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31. 发明授权

US4432855A Automated system for laser mask definition for laser enhanced and conventional plating and etching 失效
标题翻译：用于激光增强和常规电镀和蚀刻的激光掩模定义自动化系统
公开(公告)号：US4432855A
公开(公告)日：1984-02-21
申请号：US429657
申请日：1982-09-30
申请人： Lubomyr T. Romankiw , Robert J. von Gutfeld
发明人： Lubomyr T. Romankiw , Robert J. von Gutfeld
IPC分类号： C23F4/00 , C23C18/14 , C23C18/16 , C23C18/18 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/42 , C23C18/44 , C23F1/00 , C25D5/00 , C25D5/02 , C25F3/14 , C25F7/00 , H05K3/00 , H05K3/07 , H05K3/10 , H05K3/24 , C25D17/00
CPC分类号： H05K3/243 , C25D21/02 , C25D5/00 , C25D5/024 , C25F3/14 , H05K2203/107 , H05K2203/1545 , H05K3/0032 , H05K3/07 , H05K3/108 , H05K3/241
摘要： A laser enhanced electroplating system or etching system or conventional electroplating or etching system includes a continuous electrochemical processing system with a sheet of material to be treated electrochemically passed from a supply roller to a plating bath and out over an exit roller with the plating system under automatic control. A rinse-tank is also proved in series with the plating tank. The sheet to be treated electrochemically can be coated with a protective film which prevents electrochemical action from occurring where it is present, but which sheet can be removed in a predetermined location. One removes the protective film where desired to provide a mask by means of a laser which is scanned under automatic control. Then the plating or etching operation occurs through the openings in the mask. A rinse-tank contains a solvent capable of removing the mask from the sheet subsequent to the plating or etching operation. An array of lasers can be employed. An array of lasers can be multiplexed, synchronously activated or pulsed. The electrochemical operation can be performed with the concomitant application of energy from the laser in order to enhance the chemical action in areas from which the masking (protective) film has been removed. The laser can be scanned by means of a mirror, which oscillates or can be fixed. The masking material is composed of an organic material such as glycol phthalate, paraffin, photoresist, gelatin, etc.
摘要翻译：激光增强电镀系统或蚀刻系统或传统的电镀或蚀刻系统包括连续的电化学处理系统，其具有待处理的材料片材，其从电源辊电镀到镀浴，并且在电镀系统自动下出口的出口辊控制。冲洗槽也与镀槽串联证明。待电化学处理的片材可以涂覆保护膜，该保护膜防止在存在电化学作用的地方发生，而在预定位置可以除去哪种片材。通过在自动控制下扫描的激光器，可以在需要时去除保护膜以提供掩模。然后通过掩模中的开口进行电镀或蚀刻操作。漂洗槽含有能够在电镀或蚀刻操作之后从片材上除去掩模的溶剂。可以采用激光器阵列。激光器阵列可以被复用，同步激活或脉冲。电化学操作可以通过伴随来自激光器的能量的应用来进行，以增强已经除去掩蔽（保护）膜的区域中的化学作用。可以通过镜子扫描激光，其可以振荡或固定。掩蔽材料由有机材料如邻苯二甲酸二醇，石蜡，光致抗蚀剂，明胶等组成。

32. 发明授权

US4281057A Variable pre-spin drying time control of photoresists thickness 失效
标题翻译：可变预旋转干燥时间控制光刻胶厚度
公开(公告)号：US4281057A
公开(公告)日：1981-07-28
申请号：US766308
申请日：1977-02-07
申请人： Eugene E. Castellani , Ian M. Croll , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
发明人： Eugene E. Castellani , Ian M. Croll , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
IPC分类号： G03F7/16 , G03C5/00 , G03C1/76 , G03C1/86 , G03C1/94
CPC分类号： G03F7/162 , Y10S430/136
摘要： Resist is applied to a surface with a syringe, or other suitable dropper, equipped with a millipore filter to remove contaminants. The surface is completely flooded with resist. Resist is allowed to remain on the surface of the evaporated metal for a period of time prior to spin coating. Allowing resist to remain on the surface prior to coating produces a uniform film. For a 2 micron thick uniform resist coating, a minimum of 15 seconds is allowed prior to spinning while in the case of a 4 micron thick resist coating a much longer period is allowed.For the application of a 2 micron film, the resist material after partial drying for approximately 15 seconds is spun at 2000 rpm for 30 seconds. In order to apply a 5 micron thick resist film, resist is spun at 2000 rpm for 30 seconds after partial drying for approximately 10 minutes.
摘要翻译：用注射器或其他合适的滴管将抗蚀剂施加到表面上，该滴管配备有微孔过滤器以除去污染物。表面完全充斥着抗蚀剂。在旋转涂布之前，允许抗蚀剂在蒸发的金属的表面上保留一段时间。允许抗蚀剂在涂覆之前保留在表面上产生均匀的膜。对于2微米厚的均匀抗蚀剂涂层，在纺丝之前允许至少15秒，而在4微米厚的抗蚀剂涂层的情况下允许更长的时间。为了施加2微米的膜，将部分干燥约15秒的抗蚀剂材料在2000rpm下旋转30秒。为了施加5微米厚的抗蚀剂膜，将抗蚀剂在部分干燥约10分钟后以2000rpm旋转30秒。

33. 发明授权

US08871560B2 Plasma annealing of thin film solar cells 有权
标题翻译：薄膜太阳能电池的等离子体退火
公开(公告)号：US08871560B2
公开(公告)日：2014-10-28
申请号：US13571048
申请日：2012-08-09
申请人： Shafaat Ahmed , Sukjay Chey , Hariklia Deligianni , Lubomyr T. Romankiw
发明人： Shafaat Ahmed , Sukjay Chey , Hariklia Deligianni , Lubomyr T. Romankiw
IPC分类号： H01L31/032 , H01L31/0749
CPC分类号： H01L31/0326 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma.
摘要翻译：实施例涉及一种用于退火太阳能电池结构的方法，包括在太阳能电池基底结构的钼（Mo）层上形成吸收层。太阳能电池基体结构包括衬底，Mo层位于衬底上。吸收层包括半导体硫族化物材料。通过将太阳能电池基底结构的外层暴露于等离子体来进行太阳能电池基体结构的退火。

34. 发明申请

US20120061790A1 Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition 有权
标题翻译：通过电沉积制造CZTS光伏器件的结构和方法
公开(公告)号：US20120061790A1
公开(公告)日：2012-03-15
申请号：US12878746
申请日：2010-09-09
申请人： Shafaat Ahmed , Hariklia Deligianni , Lubomyr T. Romankiw , Kejia Wang
发明人： Shafaat Ahmed , Hariklia Deligianni , Lubomyr T. Romankiw , Kejia Wang
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0272 , C25D5/10 , C25D5/50 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0224 , H01L31/0326 , H01L31/072 , H01L31/18 , H01L2924/10822 , Y02E10/50
摘要： Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.
摘要翻译：提供了使用电沉积在二极管（如太阳能电池）中形成吸收层的技术。在一个方面，提供了制造二极管的方法。该方法包括以下步骤。提供基板。在基板上形成背面电极。一个或多个层电沉积在背面电极上，其中至少一个层包含铜，至少一个层包含锌，并且至少一层包括锡。这些层在包含硫源的环境中退火，以在背面电极上形成p型CZTS吸收层。在CZTS吸收层上形成n型半导体层。在n型半导体层上形成透明导电层。还提供二极管。

35. 发明申请

US20120055612A1 ELECTRODEPOSITION METHODS OF GALLIUM AND GALLIUM ALLOY FILMS AND RELATED PHOTOVOLTAIC STRUCTURES 审中-公开
标题翻译：镓和镓合金膜的电沉积方法和相关的光伏结构
公开(公告)号：US20120055612A1
公开(公告)日：2012-03-08
申请号：US12874496
申请日：2010-09-02
申请人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
发明人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
IPC分类号： C25D7/12 , B32B38/00 , C25D5/10
CPC分类号： H01L31/0322 , C25D3/38 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/56 , C25D7/126 , H01L21/02568 , H01L21/02628 , H01L23/3738 , H01L31/0749 , H01L2224/73253 , Y02E10/541
摘要： Photovoltaic devices and methods for preparing a p-type semiconductor layer for the photovoltaic devices generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy with the electroplating process.
摘要翻译：用于制备用于光伏器件的p型半导体层的光伏器件和方法通常包括通过使导电层与不含络合剂的镀浴接触来将一层镓或镓合金电镀到导电层上，所述络合剂包括镓盐，甲烷磺酸或硫酸钠和包含至少一个氮原子和/或至少一个硫原子的有机添加剂和溶剂; 调节溶液的pH值小于2.6或大于12.6。光电器件包括选自砷，锑，铋及其混合物的p型半导体层中的杂质。可以通过以这种方式电镀镓或镓合金来形成用于形成CIS，CGS和CIGS p型半导体结构的各种光伏前体层。还公开了通过电镀工艺形成镓或镓合金的热界面的工艺。

36. 发明授权

US08037926B2 Method and apparatus for chip cooling 有权
标题翻译：芯片冷却方法和装置
公开(公告)号：US08037926B2
公开(公告)日：2011-10-18
申请号：US11766533
申请日：2007-06-21
申请人： Yves C. Martin , Lubomyr T. Romankiw , Theodore G. Van Kessel
发明人： Yves C. Martin , Lubomyr T. Romankiw , Theodore G. Van Kessel
IPC分类号： H05K7/20
CPC分类号： H01L23/427 , H01L2924/0002 , Y10S165/908 , H01L2924/00
摘要： In one embodiment, the invention is a method and apparatus for chip cooling. One embodiment of a system for cooling a heat-generating device, such as a semiconductor chip, includes a vaporization chamber for at least partially vaporizing a stream of liquid in a stream of a gas to produce a mixture of gas, vapor and liquid and a heat sink coupled to the vaporization chamber for transferring heat from the heat-generating device to the mixture.
摘要翻译：在一个实施例中，本发明是用于芯片冷却的方法和装置。用于冷却诸如半导体芯片的发热装置的系统的一个实施例包括蒸发室，用于至少部分地蒸发气体流中的液体流以产生气体，蒸气和液体的混合物，以及耦合到蒸发室的散热器，用于将热量从发热装置传递到混合物。

37. 发明申请

US20110012085A1 METHODS OF MANUFACTURE OF VERTICAL NANOWIRE FET DEVICES 有权
标题翻译：垂直纳米管FET器件的制造方法
公开(公告)号：US20110012085A1
公开(公告)日：2011-01-20
申请号：US11860459
申请日：2007-09-24
申请人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： H01L29/775 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02521 , H01L21/02628 , H01L21/02639 , H01L29/0676 , H01L29/42392 , H01L29/66742 , H01L29/775 , H01L29/78642
摘要： A vertical Field Effect Transistor (FET) comprising a vertical semiconductor nanowire is formed by the following steps. Create a columnar pore in a bottom dielectric layer formed on a bottom electrode. Fill the columnar pore by plating a vertical semiconductor nanowire having a bottom end contacting the bottom electrode. The semiconductor nanowire forms an FET device with a FET channel region between a source region and a drain region formed in distal ends of the vertical semiconductor nanowire. Form a gate dielectric layer around the channel region of the vertical semiconductor nanowire and then form a gate electrode around the gate dielectric layer. Form a top electrode contacting a top end of the vertical semiconductor nanowire.
摘要翻译：通过以下步骤形成包括垂直半导体纳米线的垂直场效应晶体管（FET）。在形成在底部电极上的底部电介质层中形成柱状孔。通过电镀具有与底部电极接触的底端的垂直半导体纳米线来填充柱状孔。半导体纳米线形成FET器件，其在形成于垂直半导体纳米线的末端的源极区域与漏极区域之间具有FET沟道区域。在垂直半导体纳米线的沟道区周围形成栅极电介质层，然后在栅极介电层周围形成栅电极。形成与垂直半导体纳米线的顶端接触的顶部电极。

38. 发明授权

US07736753B2 Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ECD 有权
标题翻译：通过脉冲ECD形成包含组成调制铁磁层的纳米结构
公开(公告)号：US07736753B2
公开(公告)日：2010-06-15
申请号：US11620480
申请日：2007-01-05
申请人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： B32B5/16
CPC分类号： C25D5/022 , B82Y25/00 , C25D3/562 , C25D5/10 , C25D5/18 , H01F1/0072 , H01F41/26 , Y10S977/762 , Y10S977/81 , Y10S977/838 , Y10T428/12028 , Y10T428/12465 , Y10T428/12493 , Y10T428/12931 , Y10T428/12944 , Y10T428/12951 , Y10T428/12986 , Y10T428/24967 , Y10T428/2982
摘要： The present invention is related to a method for forming a structure that contains alternating first and second ferromagnetic layers of different material compositions. A substrate containing a supporting matrix with at least one open pore and a conductive base layer is first formed. Electroplating of the substrate is then carried out in an electroplating solution that contains at least one ferromagnetic metal element and one or more additional, different metal elements. A pulsed current with alternating high and low potentials is applied to the conductive base layer of the substrate structure to thereby form alternating ferromagnetic layers of different material compositions in the open pore of the supporting matrix.
摘要翻译：本发明涉及一种用于形成包含不同材料组成的交替的第一和第二铁磁层的结构的方法。首先形成含有具有至少一个开放孔的支撑基体和导电性基底层的基板。然后在含有至少一种铁磁金属元素和一种或多种另外不同的金属元素的电镀溶液中进行基底的电镀。具有交替的高电位和低电位的脉冲电流被施加到衬底结构的导电基底层，从而在支撑矩阵的开孔中形成不同材料组成的交替铁磁层。

39. 发明申请

US20090302305A1 SELF-CONSTRAINED ANISOTROPIC GERMANIUM NANOSTRUCTURE FROM ELECTROPLATING 有权
标题翻译：电镀的自约束非均质锗原子纳米结构
公开(公告)号：US20090302305A1
公开(公告)日：2009-12-10
申请号：US12541559
申请日：2009-08-14
申请人： Guy Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Guy Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： H01L29/12
CPC分类号： C25D3/54 , B82Y10/00 , C25D5/022 , C25D7/123 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/02628 , H01L21/02639 , Y10S977/762
摘要： A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.
摘要翻译：提供包括锗的纳米结构，其包括直径小于1微米的导线和宽度小于1微米的与基底接触并从基底向外延伸的纳米结构以及制备方法。

40. 发明申请

US20090294106A1 METHOD AND APPARATUS FOR CHIP COOLING 有权
标题翻译：芯片冷却的方法和装置
公开(公告)号：US20090294106A1
公开(公告)日：2009-12-03
申请号：US12128290
申请日：2008-05-28
申请人： Matteo Flotta , Yves C. Martin , Lubomyr T. Romankiw , Theodore G. Van Kessel
发明人： Matteo Flotta , Yves C. Martin , Lubomyr T. Romankiw , Theodore G. Van Kessel
IPC分类号： F28D15/00
CPC分类号： H01L23/4735 , H01L2924/0002 , H05K7/20327 , H05K7/20381 , H05K7/20772 , H01L2924/00
摘要： In one embodiment, the invention is a method and apparatus for chip cooling. One embodiment of an apparatus for cooling a heat-generating device includes an inlet for receiving a fluid, a manifold comprising a plurality of apertures formed therein for decreasing the pressure of the fluid from a first pressure by adiabatic expansion for impinging the fluid on the heat-generating device once the pressure of the fluid is decreased from the first pressure.
摘要翻译：在一个实施例中，本发明是用于芯片冷却的方法和装置。用于冷却发热装置的装置的一个实施例包括用于接收流体的入口，歧管，其包括形成在其中的多个孔，用于通过绝热膨胀减小来自第一压力的流体的压力，以将流体冲击在热一旦流体的压力从第一压力减小，则产生装置。

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