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31. 发明授权

US07023046B2 Undoped oxide liner/BPSG for improved data retention 有权
标题翻译：未掺杂氧化物衬垫/ BPSG，以改善数据保留
公开(公告)号：US07023046B2
公开(公告)日：2006-04-04
申请号：US10617450
申请日：2003-07-11
申请人： Minh Van Ngo , Angela Hui , Ning Cheng , Jeyong Park , Jean Yee-Mei Yang , Robert A. Huertas , Tazrien Kamal , Pei-Yuan Gao , Tyagamohan Gottipati
发明人： Minh Van Ngo , Angela Hui , Ning Cheng , Jeyong Park , Jean Yee-Mei Yang , Robert A. Huertas , Tazrien Kamal , Pei-Yuan Gao , Tyagamohan Gottipati
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/31612 , H01L21/31625 , H01L27/115 , H01L29/511
摘要： Semiconductor devices with improved data retention are formed by depositing an undoped oxide liner on spaced apart transistors followed by in situ deposition of a BPSG layer. Embodiments include depositing an undoped silicon oxide liner derived from TEOS, as at a thickness of 400 Å to 600 Å, on transistors of a non-volatile semiconductor device, as by sub-atmospheric chemical vapor deposition, followed by depositing the BPSG layer in the same deposition chamber.
摘要翻译：具有改进的数据保留的半导体器件通过将未掺杂的氧化物衬底沉积在间隔开的晶体管上，然后原位沉积BPSG层来形成。实施例包括在非易失性半导体器件的晶体管上沉积衍生自TEOS的未掺杂的氧化硅衬垫，如非易失性半导体器件的晶体管，如通过亚大气压化学气相沉积，然后将BPSG层沉积在相同的沉积室。

32. 发明申请

US20050244398A1 Pharmaceutical preparation and method of treatment of human malignancies with arginine deprivation 有权
标题翻译：用精氨酸剥夺治疗人类恶性肿瘤的药物制剂及方法
公开(公告)号：US20050244398A1
公开(公告)日：2005-11-03
申请号：US10518223
申请日：2003-06-20
申请人： Ning Cheng , Yun Leung , Wai Lo
发明人： Ning Cheng , Yun Leung , Wai Lo
IPC分类号： C12N15/09 , A61K9/08 , A61K38/00 , A61K38/44 , A61P1/00 , A61P35/00 , C07H21/04 , C12N1/21 , C12N9/06 , C12N9/14 , C12N9/78 , C12N9/80 , C12N9/96 , C12N15/55 , C12N15/74 , C12P21/06 , C12R1/125
CPC分类号： C12N9/78 , A61K38/00 , C12N9/14
摘要： The present invention provides an isolated and substantially purified recombinant human arginase having sufficiently high enzymatic activity and stability to maintain Adequate Arginine Depletion in a patient. The present invention also provides a pharmaceutical composition comprising the modified invention enzyme and method for treatment of diseases using the pharmaceutical composition.
摘要翻译：本发明提供了具有足够高的酶活性和稳定性的分离和基本纯化的重组人精氨酸酶，以维持患者中足够的精氨酸消耗。本发明还提供了包含该修饰的发明酶的药物组合物和使用该药物组合物治疗疾病的方法。

33. 发明授权

US06894342B1 Structure and method for preventing UV radiation damage in a memory cell and improving contact CD control 有权
标题翻译：用于防止存储单元中的紫外线辐射损伤的结构和方法，并改善接触式CD控制
公开(公告)号：US06894342B1
公开(公告)日：2005-05-17
申请号：US10460278
申请日：2003-06-12
申请人： Angela Hui , Minh V. Ngo , Ning Cheng , Jaeyong Park , Jean Y. Yang , Hirokazu Tokuno , Kouros Ghandehari , Hidehiko Shiraiwa
发明人： Angela Hui , Minh V. Ngo , Ning Cheng , Jaeyong Park , Jean Y. Yang , Hirokazu Tokuno , Kouros Ghandehari , Hidehiko Shiraiwa
IPC分类号： H01L21/336 , H01L21/8246 , H01L23/532 , H01L23/552 , H01L29/788
CPC分类号： H01L27/11568 , H01L23/53295 , H01L23/552 , H01L27/112 , H01L29/66833 , H01L2924/0002 , H01L2924/00
摘要： According to one exemplary embodiment, a structure comprises a substrate. The structure further comprises at least one memory cell situated on the substrate. The at least one memory cell may be, for example, a SONOS flash memory cell. The structure further comprises an interlayer dielectric layer situated over at least one memory cell and over the substrate. The structure further comprises a first antireflective coating layer situated over the interlayer dielectric layer. According to this exemplary embodiment, the structure further comprises a second antireflective coating layer situated directly over the first anti reflective coating layer. Either the first antireflective coating layer or second antireflective coating layer must be a silicon-rich layer. The first antireflective coating layer and the second antireflective coating may form a UV radiation blocking layer having a UV transparency less than approximately 1.0 percent, for example.
摘要翻译：根据一个示例性实施例，一种结构包括基底。该结构还包括位于基板上的至少一个存储单元。至少一个存储单元可以是例如SONOS闪存单元。该结构还包括位于至少一个存储器单元上方和衬底上方的层间电介质层。该结构还包括位于层间电介质层上的第一抗反射涂层。根据该示例性实施例，该结构还包括直接位于第一抗反射涂层上的第二抗反射涂层。第一抗反射涂层或第二抗反射涂层必须是富硅层。第一抗反射涂层和第二抗反射涂层可以形成例如UV透明度小于约1.0％的UV辐射阻挡层。

34. 发明授权

US08543001B2 Cascaded injection locking of fabry-perot laser for wave division multiplexing passive optical networks 失效
标题翻译：用于波分复用无源光网络的fabry-perot激光器的级联注入锁定
公开(公告)号：US08543001B2
公开(公告)日：2013-09-24
申请号：US12901127
申请日：2010-10-08
申请人： Ning Cheng
发明人： Ning Cheng
IPC分类号： H04J14/02 , H04J14/00
CPC分类号： H04J14/0282 , H04B10/2587 , H04B10/506 , H04J14/0246 , H04J14/025 , H04J2014/0253
摘要： An optical network unit (ONU) comprising a first optical fiber, a first optical circulator coupled to the first optical fiber, a first seed light injected laser coupled to the first optical circulator, wherein the first optical circulator is positioned between the first seed light injected laser and the first optical fiber, and a second seed light injected laser coupled to the first optical circulator and the first seed light injected laser, wherein the first optical circulator is positioned between the second seed light injected laser and the first optical fiber. Also disclosed is a method comprising receiving a seed light signal, amplifying the seed light signal using seed light injection locking, thereby producing an amplified seed light signal, and producing an optical signal using the amplified seed light signal and seed light injection locking, wherein the optical signal has about the same wavelength as the seed light signal.
摘要翻译：一种光网络单元（ONU），包括第一光纤，耦合到第一光纤的第一光循环器，耦合到第一光循环器的第一种子光注入激光器，其中第一光环行器位于第一种子光注入激光器和第一光纤，以及耦合到第一光循环器和第一种子光注入激光器的第二种子光注入激光器，其中第一光环行器位于第二种子光注入激光器和第一光纤之间。还公开了一种方法，包括接收种子光信号，使用种子光注入锁定放大种子光信号，从而产生放大的种子光信号，并使用放大的种子光信号和种子光注入锁定产生光信号，其中光信号具有与种子光信号大致相同的波长。

35. 发明申请

US20110307534A1 Distributed file system supporting data block dispatching and file processing method thereof 审中-公开
标题翻译：分布式文件系统支持数据块调度及其文件处理方法
公开(公告)号：US20110307534A1
公开(公告)日：2011-12-15
申请号：US13202966
申请日：2009-11-26
申请人： Jie Peng , Chong Wang , Ning Cheng , Bo Zhang , Jianbo Xia
发明人： Jie Peng , Chong Wang , Ning Cheng , Bo Zhang , Jianbo Xia
IPC分类号： G06F17/30 , G06F15/16
CPC分类号： H04N21/4722 , G06F16/1834 , H04N21/23109 , H04N21/23116
摘要： A distributed file system and a file processing method thereof are disclosed. The distributed file system comprises at least two file nodes (1, 2, . . . , n), and each file node comprises a metadata server (12, 22, . . . , n2), a file access client (11, 21, . . . , n1), a file access server (13, 23, . . . , n3) and a storage medium (14, 24, . . . , n4), and file nodes can access each other. The file processing method comprises the steps of: storing different files in each file node in a scattered way; for each file node, users of the current file node firstly accessing metadata/valid data of a required file in the file node through the file access client of the file node; if the metadata/valid data of the required file are not found in the file node, the users access other nodes through the file access clients. The present invention effectively solves the problem that a metadata server is easy to become a performance bottleneck when a great number of users access hot data concurrently, and can furthest release the storage space of some file nodes by the file processing methods, such as data block dispatching and data block aging, thereby is greatly increasing the utilization ratio.
摘要翻译：公开了一种分布式文件系统及其文件处理方法。所述分布式文件系统包括至少两个文件节点（1,2，...，n），并且每个文件节点包括元数据服务器（12,22，...，n2），文件访问客户端（11,21 ，...，n1），文件访问服务器（13,23，...，n3）和存储介质（14,24，...，n4），并且文件节点可以彼此访问。文件处理方法包括以下步骤：以分散的方式在每个文件节点中存储不同的文件; 对于每个文件节点，当前文件节点的用户首先通过文件节点的文件访问客户端访问文件节点中所需文件的元数据/有效数据; 如果在文件节点中找不到所需文件的元数据/有效数据，则用户通过文件访问客户端访问其他节点。本发明有效地解决了当大量用户同时访问热数据时元数据服务器容易成为性能瓶颈的问题，并且可以通过文件处理方法（例如数据块）最大程度地释放一些文件节点的存储空间调度和数据块老化，从而大大提高了利用率。

36. 发明申请

US20110278660A1 ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DISTURB 有权
标题翻译： ORO和ORPRO与位线TRENCH到禁止运输程序干扰
公开(公告)号：US20110278660A1
公开(公告)日：2011-11-17
申请号：US13190565
申请日：2011-07-26
申请人： Ning Cheng , K.T. Chang , Hiro Kinoshita , Chih-Yuh Yang , Lei Xue , Chungho Lee , Minghao Shen , Angela Hui , Huaqiang Wu
发明人： Ning Cheng , K.T. Chang , Hiro Kinoshita , Chih-Yuh Yang , Lei Xue , Chungho Lee , Minghao Shen , Angela Hui , Huaqiang Wu
IPC分类号： H01L29/792
CPC分类号： H01L27/115 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L27/11568 , H01L29/42332 , H01L29/42348 , H01L29/66825 , H01L29/66833 , H01L29/7887 , H01L29/7923
摘要： Memory devices having improved TPD characteristics and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line openings containing a bit line dielectric between the memory cells. The memory cell contains a charge storage layer and a first poly gate. The bit line opening extends into the semiconductor substrate. By containing the bit line dielectric in the bit line openings that extend into the semiconductor substrate, the memory device can improve the electrical isolation between memory cells, thereby preventing and/or mitigating TPD.
摘要翻译：提供了具有改善的TPD特性的存储器件和制造存储器件的方法。存储器件在半导体衬底上包含两个或更多个存储单元，并且在存储单元之间包含位线电介质的位线开口。存储单元包含电荷存储层和第一多晶硅栅极。位线开口延伸到半导体衬底中。通过将延伸到半导体衬底的位线开口中的位线电介质包含在内，存储器件可以改善存储器单元之间的电隔离，从而防止和/或减轻TPD。

37. 发明授权

US07935596B2 HTO offset and BL trench process for memory device to improve device performance 有权
标题翻译： HTO偏移和BL沟槽工艺为存储器件提高器件性能
公开(公告)号：US07935596B2
公开(公告)日：2011-05-03
申请号：US12342008
申请日：2008-12-22
申请人： Ning Cheng , Huaqiang Wu , Hiro Kinoshita , Jihwan Choi
发明人： Ning Cheng , Huaqiang Wu , Hiro Kinoshita , Jihwan Choi
IPC分类号： H01L21/336
CPC分类号： H01L29/66833 , H01L27/11565 , H01L27/11568 , H01L29/7923
摘要： Memory devices having an increased effective channel length and/or improved TPD characteristics, and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The bit line dielectrics can extend into the semiconductor. The memory cell contains a charge trapping dielectric stack, a poly gate, a pair of pocket implant regions, and a pair of bit lines. The bit line can be formed by an implant process at a higher energy level and/or a higher concentration of dopants without suffering device short channel roll off issues because spacers at bit line sidewalls constrain the implant in narrower implant regions.
摘要翻译：提供具有增加的有效信道长度和/或改善的TPD特性的存储器件，以及制造存储器件的方法。存储器件在半导体衬底上包含两个或更多存储器单元，并且在存储器单元之间包含位线电介质。位线电介质可以延伸到半导体中。存储单元包含电荷捕获介质堆叠，多晶硅栅极，一对凹穴注入区域和一对位线。位线可以通过在较高能级和/或较高浓度的掺杂剂的注入工艺形成，而不会发生器件短沟道卷绕问题，因为位线侧壁处的间隔物在较窄的植入区域中约束植入物。

38. 发明申请

US20110091214A1 Cascased Injection Locking of Fabry-Perot Laser for Wave Division Modulated Passive Optical Networks 失效
标题翻译：用于波分复用无源光网络的法布里 - 珀罗激光器的串联注入锁定
公开(公告)号：US20110091214A1
公开(公告)日：2011-04-21
申请号：US12901127
申请日：2010-10-08
申请人： Ning Cheng
发明人： Ning Cheng
IPC分类号： H04J14/02
CPC分类号： H04J14/0282 , H04B10/2587 , H04B10/506 , H04J14/0246 , H04J14/025 , H04J2014/0253
摘要： An optical network unit (ONU) comprising a first optical fiber, a first optical circulator coupled to the first optical fiber, a first seed light injected laser coupled to the first optical circulator, wherein the first optical circulator is positioned between the first seed light injected laser and the first optical fiber, and a second seed light injected laser coupled to the first optical circulator and the first seed light injected laser, wherein the first optical circulator is positioned between the second seed light injected laser and the first optical fiber. Also disclosed is a method comprising receiving a seed light signal, amplifying the seed light signal using seed light injection locking, thereby producing an amplified seed light signal, and producing an optical signal using the amplified seed light signal and seed light injection locking, wherein the optical signal has about the same wavelength as the seed light signal.
摘要翻译：一种光网络单元（ONU），包括第一光纤，耦合到第一光纤的第一光循环器，耦合到第一光循环器的第一种子光注入激光器，其中第一光环行器位于第一种子光注入激光器和第一光纤，以及耦合到第一光循环器和第一种子光注入激光器的第二种子光注入激光器，其中第一光环行器位于第二种子光注入激光器和第一光纤之间。还公开了一种方法，包括接收种子光信号，使用种子光注入锁定放大种子光信号，从而产生放大的种子光信号，并使用放大的种子光信号和种子光注入锁定产生光信号，其中光信号具有与种子光信号大致相同的波长。

39. 发明授权

US07829936B2 Split charge storage node inner spacer process 有权
标题翻译：分离电荷存储节点内隔离过程
公开(公告)号：US07829936B2
公开(公告)日：2010-11-09
申请号：US11873822
申请日：2007-10-17
申请人： Minghao Shen , Shenqing Fang , Wai Lo , Christie R. K. Marrian , Chungho Lee , Ning Cheng , Fred Cheung , Huaqiang Wu
发明人： Minghao Shen , Shenqing Fang , Wai Lo , Christie R. K. Marrian , Chungho Lee , Ning Cheng , Fred Cheung , Huaqiang Wu
IPC分类号： H01L21/331
CPC分类号： H01L29/7923 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/42344
摘要： Methods of forming a memory cell containing two split sub-lithographic charge storage nodes on a semiconductor substrate are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing exposed portions of a first poly layer while leaving portions of the first poly layer protected by the spacers, the method can provide two split sub-lithographic first poly gates. Further, by removing exposed portions of a charge storage layer while leaving portions of the charge storage layer protected by the two split sub-lithographic first poly gates, the method can provide two split, narrow portions of the charge storage layer, which subsequently form two split sub-lithographic charge storage nodes.
摘要翻译：提供了在半导体衬底上形成包含两个分开的次光刻电荷存储节点的存储单元的方法。这些方法可以包括通过使用间隔物形成技术形成两个分裂的亚光刻电荷存储节点。通过去除第一多晶硅层的暴露部分，同时留下被间隔物保护的第一多晶硅层的部分，该方法可以提供两个分裂的次光刻的第一多晶硅栅极。此外，通过去除电荷存储层的暴露部分，同时保留由两个分割子光刻第一多晶硅栅极保护的电荷存储层的部分，该方法可以提供电荷存储层的两个分开的窄部分，其随后形成两个拆分次光刻电荷存储节点。

40. 发明授权

US07732281B1 Methods for fabricating dual bit flash memory devices 有权
标题翻译：制造双位闪存器件的方法
公开(公告)号：US07732281B1
公开(公告)日：2010-06-08
申请号：US11410695
申请日：2006-04-24
申请人： Minghao Shen , Fred Cheung , Ning Cheng , Wei Zheng , Hiroyuki Kinoshita , Chih-Yuh Yang
发明人： Minghao Shen , Fred Cheung , Ning Cheng , Wei Zheng , Hiroyuki Kinoshita , Chih-Yuh Yang
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L21/28282 , H01L29/7923
摘要： Methods for fabricating dual bit memory devices are provided. In an exemplary embodiment of the invention, a method for fabricating a dual bit memory device comprises forming a charge trapping layer overlying a substrate and etching an isolation opening through the charge trapping layer. An oxide layer is formed overlying the charge trapping layer and within the isolation opening. A control gate is fabricated overlying the isolation opening and portions of the charge trapping layer adjacent to the isolation opening. The oxide layer and the charge trapping layer are etched using the control gate as an etch mask and impurity dopants are implanted into the substrate using the control gate as an implantation mask.
摘要翻译：提供了制造双位存储器件的方法。在本发明的示例性实施例中，一种用于制造双位存储器件的方法包括形成覆盖衬底的电荷俘获层，并蚀刻穿过电荷俘获层的隔离开口。在电荷俘获层之上和隔离开口内形成氧化物层。制造控制栅极覆盖隔离开口和邻近隔离开口的电荷捕获层的部分。使用控制栅极作为蚀刻掩模蚀刻氧化物层和电荷俘获层，并且使用控制栅极作为注入掩模将杂质掺杂剂注入到衬底中。

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