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31. 发明申请

US20120026102A1 ELECTRONIC APPARATUS AND METHOD OF FABRICATING THE SAME 有权
标题翻译：电子装置及其制造方法
公开(公告)号：US20120026102A1
公开(公告)日：2012-02-02
申请号：US12915017
申请日：2010-10-29
申请人： Yi-Shan Chang , Juin-Ming Wu , Shih-Hsiung Lin , Ying-Cheng Chen , Sheng-Hung Wang , Wen-Hau Lee , Chang-Cheng Chen
发明人： Yi-Shan Chang , Juin-Ming Wu , Shih-Hsiung Lin , Ying-Cheng Chen , Sheng-Hung Wang , Wen-Hau Lee , Chang-Cheng Chen
IPC分类号： G06F3/041 , G03F7/20
CPC分类号： G02F1/13338 , G03F7/2022 , G06F3/041 , G06F2203/04103
摘要： A method of fabricating an electronic apparatus having an active region and a peripheral region surrounding the active region is described. A first main device and a second main device are provided. An optical clear liquid adhesive (OCLA) is applied between the first main device and the second main device and within the active region. A photo-mask having a transparent region and an opaque region is provided above the second main device, and the transparent region corresponds to the peripheral region. An OCLA diffusion process is performed such that the OCLA diffuses from the active region to the peripheral region. During the OCLA diffusion process, a first irradiating process with the photo-mask is performed, such that the OCLA diffusing to the peripheral region is partially cured. After removing the photo-mask, a second irradiating process is performed, such that the OCLA is completely cured.
摘要翻译：描述了制造具有有源区域和围绕有源区域的周边区域的电子设备的方法。提供第一主装置和第二主装置。光学透明液体粘合剂（OCLA）被施加在第一主装置和第二主装置之间并且在有源区域内。具有透明区域和不透明区域的光掩模设置在第二主设备的上方，透明区域对应于周边区域。执行OCLA扩散过程，使得OCLA从活性区扩散到周边区域。在OCLA扩散处理期间，进行利用光掩模的第一照射处理，使得扩散到周边区域的OCLA部分固化。在去除光掩模之后，进行第二次照射处理，使得OCLA完全固化。

32. 发明授权

US08890336B2 Cylindrical bonding structure and method of manufacture 有权
标题翻译：圆柱形接合结构及其制造方法
公开(公告)号：US08890336B2
公开(公告)日：2014-11-18
申请号：US12132628
申请日：2008-06-04
申请人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
发明人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
IPC分类号： H01L23/48 , H01L25/00 , H01L25/065 , H01L23/00
CPC分类号： H01L25/0657 , H01L24/11 , H01L24/13 , H01L25/50 , H01L2224/0401 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05672 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/11849 , H01L2224/11906 , H01L2224/13022 , H01L2224/1308 , H01L2224/13083 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13609 , H01L2224/16145 , H01L2224/16237 , H01L2224/81191 , H01L2225/06513 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2224/29099 , H01L2924/00 , H01L2224/05552 , H01L2924/013
摘要： A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive cylinder and a solder block. The conductive cylinder is formed over the bonding pad of the silicon chip and the solder block is attached to the upper end of the conductive cylinder. The solder block has a melting point lower than the conductive cylinder. The solder block can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive cylinders and finally a solder block is attached to the end of each conductive cylinder.
摘要翻译：圆柱形粘结结构及其制造方法。在硅芯片的接合焊盘上形成圆柱形接合结构，并且在形成倒装芯片封装的过程中将芯片翻转以与衬底板连接。圆柱形接合结构主要包括导电圆柱体和焊料块。导电圆柱体形成在硅芯片的接合焊盘上，并且焊接块附接到导电圆柱体的上端。焊料块的熔点低于导电圆柱体。焊料块可以配置成圆柱形，球形或半球形。为了制造圆柱形接合结构，在硅晶片上形成具有与位于晶片上的接合焊盘相对应的多个开口的图案化掩模层。将导电材料沉积到开口中以形成导电圆柱体，最后在每个导电圆柱体的末端附着焊块。

33. 发明授权

US08633908B2 Method of fabricating electronic apparatus 有权
标题翻译：制造电子设备的方法
公开(公告)号：US08633908B2
公开(公告)日：2014-01-21
申请号：US12915017
申请日：2010-10-29
申请人： Yi-Shan Chang , Juin-Ming Wu , Shih-Hsiung Lin , Ying-Cheng Chen , Sheng-Hung Wang , Wen-Hau Lee , Chang-Cheng Chen
发明人： Yi-Shan Chang , Juin-Ming Wu , Shih-Hsiung Lin , Ying-Cheng Chen , Sheng-Hung Wang , Wen-Hau Lee , Chang-Cheng Chen
IPC分类号： G06F3/041
CPC分类号： G02F1/13338 , G03F7/2022 , G06F3/041 , G06F2203/04103
摘要： A method of fabricating an electronic apparatus having an active region and a peripheral region surrounding the active region is described. A first main device and a second main device are provided. An optical clear liquid adhesive (OCLA) is applied between the first main device and the second main device and within the active region. A photo-mask having a transparent region and an opaque region is provided above the second main device, and the transparent region corresponds to the peripheral region. An OCLA diffusion process is performed such that the OCLA diffuses from the active region to the peripheral region. During the OCLA diffusion process, a first irradiating process with the photo-mask is performed, such that the OCLA diffusing to the peripheral region is partially cured. After removing the photo-mask, a second irradiating process is performed, such that the OCLA is completely cured.
摘要翻译：描述了制造具有有源区域和围绕有源区域的周边区域的电子设备的方法。提供第一主装置和第二主装置。光学透明液体粘合剂（OCLA）被施加在第一主装置和第二主装置之间并且在有源区域内。具有透明区域和不透明区域的光掩模设置在第二主设备的上方，透明区域对应于周边区域。执行OCLA扩散过程，使得OCLA从活性区扩散到周边区域。在OCLA扩散处理期间，进行利用光掩模的第一照射处理，使得扩散到周边区域的OCLA部分固化。在去除光掩模之后，进行第二次照射处理，使得OCLA完全固化。

34. 发明申请

US20110215476A1 METHOD FOR FABRICATING CIRCUIT COMPONENT 有权
标题翻译：制造电路元件的方法
公开(公告)号：US20110215476A1
公开(公告)日：2011-09-08
申请号：US13108743
申请日：2011-05-16
申请人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
发明人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
IPC分类号： H01L23/488
CPC分类号： H01L25/0657 , H01L24/11 , H01L24/13 , H01L25/50 , H01L2224/0401 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05672 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/11849 , H01L2224/11906 , H01L2224/13022 , H01L2224/1308 , H01L2224/13083 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13609 , H01L2224/16145 , H01L2224/16237 , H01L2224/81191 , H01L2225/06513 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2224/29099 , H01L2924/00 , H01L2224/05552 , H01L2924/013
摘要： A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive pillar and a solder cap. The conductive pillar is formed over the bonding pad of the silicon chip and the solder cap is attached to the upper end of the conductive pillar. The solder cap has a melting point lower than the conductive pillar. The solder cap can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive pillars and finally a solder cap is attached to the end of each conductive pillar.
摘要翻译：圆柱形粘结结构及其制造方法。在硅芯片的接合焊盘上形成圆柱形接合结构，并且在形成倒装芯片封装的过程中将芯片翻转以与衬底板连接。圆柱形接合结构主要包括导电柱和焊帽。导电柱形成在硅芯片的接合焊盘上，并且焊接帽附接到导电柱的上端。焊锡帽的熔点低于导电柱。焊帽可以被配置成圆柱形，球形或半球形。为了制造圆柱形接合结构，在硅晶片上形成具有与位于晶片上的接合焊盘相对应的多个开口的图案化掩模层。导电材料沉积到开口中以形成导电柱，最后在每个导电柱的末端附着焊帽。

35. 发明申请

US20080296761A1 Cylindrical Bonding Structure and method of manufacture 有权
标题翻译：圆柱形粘结结构及其制造方法
公开(公告)号：US20080296761A1
公开(公告)日：2008-12-04
申请号：US12132628
申请日：2008-06-04
申请人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
发明人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
IPC分类号： H01L23/485 , H01L21/60
CPC分类号： H01L25/0657 , H01L24/11 , H01L24/13 , H01L25/50 , H01L2224/0401 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05672 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/11849 , H01L2224/11906 , H01L2224/13022 , H01L2224/1308 , H01L2224/13083 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13609 , H01L2224/16145 , H01L2224/16237 , H01L2224/81191 , H01L2225/06513 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2224/29099 , H01L2924/00 , H01L2224/05552 , H01L2924/013
摘要： A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive cylinder and a solder block. The conductive cylinder is formed over the bonding pad of the silicon chip and the solder block is attached to the upper end of the conductive cylinder. The solder block has a melting point lower than the conductive cylinder. The solder block can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive cylinders and finally a solder block is attached to the end of each conductive cylinder.
摘要翻译：圆柱形粘结结构及其制造方法。在硅芯片的接合焊盘上形成圆柱形接合结构，并且在形成倒装芯片封装的过程中将芯片翻转以与衬底板连接。圆柱形接合结构主要包括导电圆柱体和焊料块。导电圆柱体形成在硅芯片的接合焊盘上，并且焊接块附接到导电圆柱体的上端。焊料块的熔点低于导电圆柱体。焊料块可以配置成圆柱形，球形或半球形。为了制造圆柱形接合结构，在硅晶片上形成具有与位于晶片上的接合焊盘相对应的多个开口的图案化掩模层。将导电材料沉积到开口中以形成导电圆柱体，最后在每个导电圆柱体的末端附着焊块。

36. 发明申请

US20080131981A1 Method for forming Au-bump with clean surface 审中-公开
标题翻译：用清洁表面形成Au凸块的方法
公开(公告)号：US20080131981A1
公开(公告)日：2008-06-05
申请号：US11950358
申请日：2007-12-04
申请人： Shih-Hsiung Lin , Po-Jui Chen , Jian-Hong Liu
发明人： Shih-Hsiung Lin , Po-Jui Chen , Jian-Hong Liu
IPC分类号： H01L21/66
CPC分类号： H01L22/22
摘要： A method for fabricating and testing a semiconductor wafer includes sputtering a TiW layer on a passivation layer and on pads, next sputtering a seed layer, made of gold, on the TiW layer, next forming a photoresist layer on the seed layer, next electroplating gold bumps on the seed layer exposed by openings in the photoresist layer, next removing the photoresist layer, next removing the seed layer not under the gold bumps, next etching the TiW layer not under the gold bumps with an etchant containing H2O2 at a temperature of between 35 and 50 degrees C, or with an etchant containing H2O2 and with ultrasonic waves applied to the etchant, next contacting probe tips of a probe card with some of the gold bumps, next cleaning the probe tips until repeating the step of contacting the probe tips with some of the gold bumps at greater than 100 times, and then after cleaning the probe tips, repeating the step of contacting the probe tips with some of the gold bumps.
摘要翻译：一种用于制造和测试半导体晶片的方法包括在钝化层和焊盘上溅射TiW层，接下来在TiW层上溅射由金构成的晶种层，接着在种子层上形成光致抗蚀剂层，接下来的电镀金在光致抗蚀剂层中由开口暴露的晶种层上的突起，接下来去除光致抗蚀剂层，接下来除去不在金凸块之下的种子层，接着用含有H 2的蚀刻剂蚀刻不在金凸块之下的TiW层，在35至50℃的温度下，或用含有H 2 O 2 O 2的蚀刻剂和超声波应用于蚀刻剂，接下来将探针卡的探针尖端与一些金凸块接触，然后清洁探针尖端，直到重复将探针尖端与一些金凸块接触大于100次的步骤，然后清洁探针尖端，重复探针尖端与其中一些接触的步骤金块。

37. 发明授权

US08461679B2 Method for fabricating circuit component 有权
标题翻译：电路元件制造方法
公开(公告)号：US08461679B2
公开(公告)日：2013-06-11
申请号：US13108743
申请日：2011-05-16
申请人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
发明人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
IPC分类号： H01L21/00
CPC分类号： H01L25/0657 , H01L24/11 , H01L24/13 , H01L25/50 , H01L2224/0401 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05672 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/11849 , H01L2224/11906 , H01L2224/13022 , H01L2224/1308 , H01L2224/13083 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13609 , H01L2224/16145 , H01L2224/16237 , H01L2224/81191 , H01L2225/06513 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2224/29099 , H01L2924/00 , H01L2224/05552 , H01L2924/013
摘要： A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive pillar and a solder cap. The conductive pillar is formed over the bonding pad of the silicon chip and the solder cap is attached to the upper end of the conductive pillar. The solder cap has a melting point lower than the conductive pillar. The solder cap can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive pillars and finally a solder cap is attached to the end of each conductive pillar.
摘要翻译：圆柱形粘结结构及其制造方法。在硅芯片的接合焊盘上形成圆柱形接合结构，并且在形成倒装芯片封装的过程中将芯片翻转以与衬底板连接。圆柱形接合结构主要包括导电柱和焊帽。导电柱形成在硅芯片的接合焊盘上，并且焊接帽附接到导电柱的上端。焊锡帽的熔点低于导电柱。焊帽可以被配置成圆柱形，球形或半球形。为了制造圆柱形接合结构，在硅晶片上形成具有与位于晶片上的接合焊盘相对应的多个开口的图案化掩模层。导电材料沉积到开口中以形成导电柱，最后在每个导电柱的末端附着焊帽。

38. 发明授权

US07960272B2 Method for fabricating thermal compliant semiconductor chip wiring structure for chip scale packaging 有权
标题翻译：用于制造用于芯片级封装的热适应性半导体芯片布线结构的方法
公开(公告)号：US07960272B2
公开(公告)日：2011-06-14
申请号：US11761360
申请日：2007-06-11
申请人： Jin-Yuan Lee , Shih-Hsiung Lin
发明人： Jin-Yuan Lee , Shih-Hsiung Lin
IPC分类号： H01L21/44
CPC分类号： H01L24/12 , H01L23/3114 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02125 , H01L2224/0231 , H01L2224/0233 , H01L2224/02335 , H01L2224/0236 , H01L2224/024 , H01L2224/0401 , H01L2224/05011 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/131 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A new method to form an integrated circuit device is achieved. The method comprises providing a substrate. A sacrificial layer is formed overlying the substrate. The sacrificial layer is patterned to form temporary vertical spacers where conductive bonding locations are planned. A conductive layer is deposited overlying the temporary vertical spacers and the substrate. The conductive layer is patterned to form conductive bonding locations overlying the temporary vertical spacers. The temporary vertical spacers are etched away to create voids underlying the conductive bonding locations.
摘要翻译：实现了形成集成电路器件的新方法。该方法包括提供基底。覆盖衬底上形成牺牲层。将牺牲层图案化以形成临时的垂直间隔件，其中计划导电接合位置。沉积在临时垂直间隔物和基底上的导电层。将导电层图案化以形成覆盖临时垂直间隔物的导电接合位置。蚀刻掉临时的垂直间隔物以在导电接合位置下方产生空隙。

39. 发明申请

US20070166993A1 METHOD FOR FABRICATING CIRCUIT COMPONENT 有权
标题翻译：制造电路元件的方法
公开(公告)号：US20070166993A1
公开(公告)日：2007-07-19
申请号：US11685216
申请日：2007-03-13
申请人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
发明人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
IPC分类号： H01L21/44
CPC分类号： H01L25/0657 , H01L24/11 , H01L24/13 , H01L25/50 , H01L2224/0401 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05672 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/11849 , H01L2224/11906 , H01L2224/13022 , H01L2224/1308 , H01L2224/13083 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13609 , H01L2224/16145 , H01L2224/16237 , H01L2224/81191 , H01L2225/06513 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2224/29099 , H01L2924/00 , H01L2224/05552 , H01L2924/013
摘要： A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive pillar and a solder cap. The conductive pillar is formed over the bonding pad of the silicon chip and the solder cap is attached to the upper end of the conductive pillar. The solder cap has a melting point lower than the conductive pillar. The solder cap can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive pillars and finally a solder cap is attached to the end of each conductive pillar.
摘要翻译：圆柱形粘结结构及其制造方法。在硅芯片的接合焊盘上形成圆柱形接合结构，并且在形成倒装芯片封装的过程中将芯片翻转以与衬底板连接。圆柱形接合结构主要包括导电柱和焊帽。导电柱形成在硅芯片的接合焊盘上，并且焊接帽附接到导电柱的上端。焊锡帽的熔点低于导电柱。焊帽可以被配置成圆柱形，球形或半球形。为了制造圆柱形接合结构，在硅晶片上形成具有与位于晶片上的接合焊盘相对应的多个开口的图案化掩模层。导电材料沉积到开口中以形成导电柱，最后在每个导电柱的末端附着焊帽。

40. 发明授权

US06784087B2 Method of fabricating cylindrical bonding structure 有权
标题翻译：制造圆柱形粘结结构的方法
公开(公告)号：US06784087B2
公开(公告)日：2004-08-31
申请号：US10174357
申请日：2002-06-17
申请人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
发明人： Jin-Yuan Lee , Chien-Kang Chou , Shih-Hsiung Lin , Hsi-Shan Kuo
IPC分类号： H01L2144
CPC分类号： H01L25/0657 , H01L24/11 , H01L24/13 , H01L25/50 , H01L2224/0401 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05672 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/11849 , H01L2224/11906 , H01L2224/13022 , H01L2224/1308 , H01L2224/13083 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13609 , H01L2224/16145 , H01L2224/16237 , H01L2224/81191 , H01L2225/06513 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2224/29099 , H01L2924/00 , H01L2224/05552 , H01L2924/013
摘要： A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive cylinder and a solder block. The conductive cylinder is formed over the bonding pad of the silicon chip and the solder block is attached to the upper end of the conductive cylinder. The solder block has a melting point lower than the conductive cylinder. The solder block can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive cylinders and finally a solder block is attached to the end of each conductive cylinder.
摘要翻译：圆柱形粘结结构及其制造方法。在硅芯片的接合焊盘上形成圆柱形接合结构，并且在形成倒装芯片封装的过程中将芯片翻转以与衬底板连接。圆柱形接合结构主要包括导电圆柱体和焊料块。导电圆柱体形成在硅芯片的接合焊盘上，并且焊接块附接到导电圆柱体的上端。焊料块的熔点低于导电圆柱体。焊料块可以配置成圆柱形，球形或半球形。为了制造圆柱形接合结构，在硅晶片上形成具有与位于晶片上的接合焊盘相对应的多个开口的图案化掩模层。将导电材料沉积到开口中以形成导电圆柱体，最后在每个导电圆柱体的末端附着焊块。

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