专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US08512581B2 Methods for liquid transfer coating of three-dimensional substrates 有权
标题翻译：三维底物液体转移涂层方法
公开(公告)号：US08512581B2
公开(公告)日：2013-08-20
申请号：US12193415
申请日：2008-08-18
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi , Somnath Nag
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi , Somnath Nag
IPC分类号： B44C1/22
CPC分类号： B01D1/22 , H01L21/02617 , H01L21/6715 , H01L22/12 , H01L31/035281 , H01L31/046 , H01L31/1872 , H01L31/1892 , H01L31/202 , H05K1/0284 , H05K3/046 , H05K3/1258 , H05K3/207 , H05K2201/09036 , H05K2201/09045 , H05K2203/0126 , H05K2203/0528 , H05K2203/308 , Y02E10/50 , Y02P70/521
摘要： Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate. Additional features may include filling the micro cavities of the substrate with a filling material, removing the filling material to expose only the substrate surfaces to be coated, coating the substrate with a layer of liquid coating material, and removing said filling material from the micro cavities of the substrate.
摘要翻译：这里公开的方法提供了选择性地涂覆3-D衬底的顶表面或脊，同时避免液体涂覆材料吸收到3-D衬底上的微腔中。衬底包括通过在模板上形成牺牲层而形成在三维衬底中的孔。模板包括具有在柱之间的柱和沟槽的模板衬底。这些步骤包括随后沉积半导体层并选择性地蚀刻牺牲层。然后，该步骤包括从模板中释放半导体层并使用用于将液体涂覆材料施加到3-D衬底的表面的液体转移涂覆步骤涂覆3-D衬底。该方法还可以包括通过选择性地涂覆衬底的顶部脊或表面来涂覆3-D衬底。附加特征可以包括用填充材料填充衬底的微腔，去除填充材料以仅暴露待涂覆的衬底表面，用一层液体涂覆材料涂覆衬底，以及从微孔中移除所述填充材料的基底。

32. 发明申请

US20120021560A1 TRUNCATED PYRAMID STRUCTURES FOR SEE-THROUGH SOLAR CELLS 有权
标题翻译：用于观察太阳能电池的截止的PYRAMID结构
公开(公告)号：US20120021560A1
公开(公告)日：2012-01-26
申请号：US13193302
申请日：2011-07-28
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/0352 , H01L31/035281 , H01L31/04 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.
摘要翻译：本公开提供了部分透明（透明）三维薄膜太阳能电池（3-D TFSC）基板。基板包括多个单元电池。每个单元电池结构具有截头棱锥形状，并且其参数可以变化以允许期望的太阳光部分通过。

33. 发明申请

US20100267186A1 METHOD FOR FABRICATING A THREE-DIMENSIONAL THIN-FILM SEMICONDUCTOR SUBSTRATE FROM A TEMPLATE 有权
标题翻译：从模板制造三维薄膜半导体基板的方法
公开(公告)号：US20100267186A1
公开(公告)日：2010-10-21
申请号：US12731058
申请日：2010-03-24
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/0236 , H01L31/035281 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A method is presented for fabrication of a three-dimensional thin-film solar cell semiconductor substrate from a template. A semiconductor template having three-dimensional surface features comprising a top surfaces substantially aligned along a (100) crystallographic plane of semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls substantially aligned along a (111) crystallographic plane is formed according to an anisotropic etching process. A dose of relatively of high energy light-mass species is implanted in the template at a uniform depth and parallel to the top surfaces and said sidewalls defining the inverted pyramidal cavities of the template. The semiconductor template is annealed to convert the dose of relatively of high energy light-mass species to a mechanically-weak-thin layer. The semiconductor template is cleaved along the mechanically-weak-thin layer to release a three-dimensional thin-film semiconductor substrate from the semiconductor template.
摘要翻译：介绍了从模板制造三维薄膜太阳能电池半导体衬底的方法。具有三维表面特征的半导体模板包括沿着半导体模板的（100）结晶平面基本对齐的顶表面和由沿着（111）晶面平行排列的侧壁限定的多个反向金字塔形腔，根据各向异性蚀刻工艺。将相对高能量光质物质的剂量以均匀的深度注入模板中，并平行于顶表面和限定模板的倒锥形腔的所述侧壁。将半导体模板退火以将相对较高能量的光质物质的剂量转换成机械弱薄层。半导体模板沿着机械弱薄层切割，以从半导体模板释放三维薄膜半导体衬底。

34. 发明申请

US20100148319A1 Substrates for High-Efficiency Thin-Film Solar Cells Based on Crystalline Templates 审中-公开
标题翻译：基于结晶模板的高效薄膜太阳能电池基板
公开(公告)号：US20100148319A1
公开(公告)日：2010-06-17
申请号：US12618663
申请日：2009-11-13
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L29/04 , H01L29/06 , H01L21/20
CPC分类号： H01L31/0236 , H01L21/3065 , H01L29/045 , H01L29/0657 , H01L31/022425 , H01L31/02363 , H01L31/035281 , H01L31/056 , H01L31/068 , H01L31/1804 , H01L31/182 , H01L31/1892 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： A three-dimensional thin-film semiconductor substrate having a plurality of ridges on the surface of the semiconductor substrate which define a base opening of an inverted pyramidal cavity and walls defining the inverted pyramidal cavity is provided. And a fabrication method for a 3-D TFSS by forming a porous silicon layer on a silicon template having a top surface aligned along a (100) crystallographic orientation plane of the silicon template and a plurality of walls each aligned along a (111) crystallographic orientation plane of the silicon template and forming an inverted pyramidal cavity. The porous silicon layer forms substantially conformal on the silicon template. Then forming a substantially conformal epitaxial silicon layer on the porous silicon layer and releasing the epitaxial silicon layer from the silicon template.
摘要翻译：提供一种三维薄膜半导体衬底，其在半导体衬底的表面上具有多个脊，其限定了反锥体腔的基部开口和限定倒置的锥体腔的壁。以及通过在硅模板上形成多孔硅层的制造方法，所述硅模板具有沿着硅模板的（100）晶体取向平面排列的顶表面，以及沿着（111）晶体学对准的多个壁硅模板的取向平面并形成反锥体腔。多孔硅层基本上在硅模板上共形。然后在多孔硅层上形成基本上共形的外延硅层，并从硅模板释放外延硅层。

35. 发明申请

US20130284255A1 High-Efficiency Thin-Film Solar Cells 审中-公开
标题翻译：高效薄膜太阳能电池
公开(公告)号：US20130284255A1
公开(公告)日：2013-10-31
申请号：US13657745
申请日：2012-10-22
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L31/0236
CPC分类号： H01L31/0236 , H01L21/3065 , H01L29/045 , H01L29/0657 , H01L31/022425 , H01L31/02363 , H01L31/035281 , H01L31/056 , H01L31/068 , H01L31/1804 , H01L31/182 , H01L31/1892 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： A three-dimensional solar cell comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity. A method for fabricating a three-dimensional thin-film solar cell from an inverted pyramidal three-dimensional thin-film silicon substrate by doping ridges on the surface of the semiconductor substrate which define an opening of an inverted pyramidal cavity on the substrate to form an emitter region, and doping a region which forms the apex of the inverted pyramidal cavity to form a base region. Adding a surface passivation layer to the surface of the substrate. Selectively etching the passivation layer from the emitter region and base region. Then concurrently metallizing the emitter region and base region.
摘要翻译：一种三维太阳能电池，包括具有反锥体腔的半导体衬底，在半导体衬底的表面上的脊上的发射极金属化区域，其限定了倒锥形腔的开口，以及在形成顶角的区域上的基底金属化区域倒锥体腔。一种通过在半导体衬底的表面上掺杂脊来限定反向锥形三维薄膜硅衬底的三维薄膜太阳能电池的方法，该衬底限定了衬底上的反锥体腔的开口以形成并且掺杂形成倒锥体腔的顶点的区域以形成基区。将表面钝化层添加到基材的表面。从发射极区域和基极区域选择性地蚀刻钝化层。然后同时金属化发射极区域和基极区域。

36. 发明授权

US08551866B2 Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing 有权
标题翻译：具有通孔的三维薄膜半导体衬底及制造方法
公开(公告)号：US08551866B2
公开(公告)日：2013-10-08
申请号：US12791842
申请日：2010-06-01
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/0352 , H01L21/00 , H01L27/142 , H01L31/022458 , H01L31/035281 , H01L31/03529 , H01L31/0468 , H01L31/054 , H01L31/056 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A method for the fabrication of a three-dimensional thin-film semiconductor substrate with selective through-holes is provided. A porous semiconductor layer is conformally formed on a semiconductor template comprising a plurality of three-dimensional inverted pyramidal surface features defined by top surface areas aligned along a (100) crystallographic orientation plane of the semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls aligned along the (111) crystallographic orientation plane of the semiconductor template. An epitaxial semiconductor layer is conformally formed on the porous semiconductor layer. The epitaxial semiconductor layer is released from the semiconductor template. Through-holes are selectively formed in the epitaxial semiconductor layer with openings between the front and back lateral surface planes of the epitaxial semiconductor layer to form a partially transparent three-dimensional thin-film semiconductor substrate.
摘要翻译：提供了一种制造具有选择性通孔的三维薄膜半导体衬底的方法。多孔半导体层保形地形成在半导体模板上，该半导体模板包括由半导体模板的（100）晶体取向平面对准的顶表面区域和由侧壁限定的多个反向锥体腔限定的多个三维倒锥体表面特征沿着半导体模板的（111）晶体取向平面排列。在多孔半导体层上共形形成外延半导体层。外延半导体层从半导体模板释放。在外延半导体层中选择性地形成通孔，该外延半导体层在外延半导体层的正面和背面侧面之间具有开口，形成部分透明的三维薄膜半导体衬底。

37. 发明申请

US20120174861A1 THREE-DIMENSIONAL SEMICONDUCTOR TEMPLATE FOR MAKING HIGH EFFICIENCY THIN-FILM SOLAR CELLS 有权
标题翻译：制造高效薄膜太阳能电池的三维半导体模板
公开(公告)号：US20120174861A1
公开(公告)日：2012-07-12
申请号：US13345935
申请日：2012-01-09
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： C30B11/00 , B44C1/22
CPC分类号： H01L31/0236 , H01L21/3065 , H01L29/045 , H01L29/0657 , H01L31/022425 , H01L31/02363 , H01L31/035281 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1892 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： A semiconductor template having a top surface aligned along a (100) crystallographic orientation plane and an inverted pyramidal cavity defined by a plurality of walls aligned along a (111) crystallographic orientation plane. A method for manufacturing a semiconductor template by selectively removing silicon material from a silicon template to form a top surface aligned along a (100) crystallographic plane of the silicon template and a plurality of walls defining an inverted pyramidal cavity each aligned along a (111) crystallographic plane of the silicon template.
摘要翻译：具有沿着（100）晶体取向平面排列的顶表面和由沿着（111）晶体取向平面排列的多个壁限定的倒置金字塔腔的半导体模板。一种用于通过从硅模板中选择性地去除硅材料以形成沿硅模板的（100）结晶平面排列的顶表面的多个壁，以及限定沿着（111）硅模板的晶体平面。

38. 发明申请

US20100294333A1 STRUCTURE AND METHOD FOR IMPROVING SOLAR CELL EFFICIENCY AND MECHANICAL STRENGTH 有权
标题翻译：改善太阳能电池效率和机械强度的结构和方法
公开(公告)号：US20100294333A1
公开(公告)日：2010-11-25
申请号：US12728772
申请日：2010-03-22
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi , Pawan Kapur , Suketu Parikh
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi , Pawan Kapur , Suketu Parikh
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/02366 , H01J37/32651 , H01J2237/3346 , H01L31/02327 , H01L31/028 , H01L31/035281 , H01L31/03921 , H01L31/046 , H01L31/054 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521 , Y10T428/24149
摘要： The present disclosure presents a three-dimensional thin film solar cell (3-D TFSC) substrate having enhanced mechanical strength, light trapping, and metal modulation coverage properties. The substrate includes a plurality of unit cells, which may or may not be different. Unit cells are defined as a small self-contained geometrical pattern which may be repeated. Each unit cell structure includes a wall enclosing a trench. Further, the unit cell includes an aperture having an aperture diameter. For the purposes of the present disclosure, the dimensions of interest include wall thickness, wall height, and aperture diameter. A pre-determined variation in these dimensions among unit cells across the substrate produces specific advantages.
摘要翻译：本公开内容提供了具有增强的机械强度，光捕获和金属调制覆盖性能的三维薄膜太阳能电池（3-D TFSC）基板。衬底包括多个单元电池，其可以是或可以不是不同的。单元单元被定义为可以重复的小的独立几何图案。每个单电池结构都包括一个包围沟槽的墙壁。此外，单元电池包括具有孔径的孔。为了本公开的目的，感兴趣的尺寸包括壁厚度，壁高度和孔直径。在衬底之间的单元电池中这些尺寸的预定变化产生了特定的优点。

39. 发明申请

US20100148318A1 Three-Dimensional Semiconductor Template for Making High Efficiency Thin-Film Solar Cells 有权
标题翻译：制造高效薄膜太阳能电池的三维半导体模板
公开(公告)号：US20100148318A1
公开(公告)日：2010-06-17
申请号：US12618649
申请日：2009-11-13
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L29/04 , H01L21/306
CPC分类号： H01L31/0236 , H01L21/3065 , H01L29/045 , H01L29/0657 , H01L31/022425 , H01L31/02363 , H01L31/035281 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1892 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： A semiconductor template having a top surface aligned along a (100) crystallographic orientation plane and an inverted pyramidal cavity defined by a plurality of walls aligned along a (111) crystallographic orientation plane. A method for manufacturing a semiconductor template by selectively removing silicon material from a silicon template to form a top surface aligned along a (100) crystallographic plane of the silicon template and a plurality of walls defining an inverted pyramidal cavity each aligned along a (111) crystallographic plane of the silicon template.
摘要翻译：具有沿着（100）晶体取向平面排列的顶表面和由沿着（111）晶体取向平面排列的多个壁限定的倒置金字塔腔的半导体模板。一种用于通过从硅模板中选择性地去除硅材料以形成沿硅模板的（100）结晶平面排列的顶表面的多个壁，以及限定沿着（111）硅模板的晶体平面。

40. 发明申请

US20100022074A1 SUBSTRATE RELEASE METHODS AND APPARATUSES 有权
标题翻译：基板释放方法和装置
公开(公告)号：US20100022074A1
公开(公告)日：2010-01-28
申请号：US12473811
申请日：2009-05-28
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L31/18 , H01L21/76259
摘要： The present disclosure relates to methods and apparatuses for fracturing or breaking a buried porous semiconductor layer to separate a 3-D thin-film semiconductor semiconductor (TFSS) substrate from a 3-D crystalline semiconductor template. The method involves forming a sacrificial porous semiconductor layer on the 3-D features of the template. A variety of techniques may be used to fracture and release the mechanically weak porous semiconductor layer without damaging the TFSS substrate layer or the template layer such as pressure variations, thermal stress generation, and mechanical bending. The methods also allow for processing three dimensional features not possible with current separation processes. Optional cleaning and final lift-off steps may be performed as part of the release step or after the release step.
摘要翻译：本公开内容涉及用于将埋入的多孔半导体层断裂或断裂以从3-D晶体半导体模板分离3-D薄膜半导体（TFSS）衬底的方法和装置。该方法包括在模板的3-D特征上形成牺牲多孔半导体层。可以使用各种技术来破坏和释放机械上的弱多孔半导体层，而不会损坏TFSS衬底层或模板层，例如压力变化，热应力产生和机械弯曲。这些方法还允许处理当前分离过程不可能的三维特征。可以在释放步骤的一部分或释放步骤之后执行可选的清洁和最终剥离步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式