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    • 31. 发明授权
    • Method and arrangement for the suppression of debris in the generation of short-wavelength radiation based on a plasma
    • 在基于等离子体的短波长辐射的产生中抑制碎屑的方法和装置
    • US07365350B2
    • 2008-04-29
    • US11380487
    • 2006-04-27
    • Duc Chinh TranJesko BrudermannBjoern MaderRené De BruijnJuergen Kleinschmidt
    • Duc Chinh TranJesko BrudermannBjoern MaderRené De BruijnJuergen Kleinschmidt
    • H04H1/04
    • G03F7/70916G03F7/70033
    • The invention is directed to a method and arrangements for the suppression of debris in short-wavelength radiation sources based on a plasma, particularly for EUV sources for semiconductor lithography. The object of the invention is to find a novel possibility for suppressing the particle flow (debris) from a plasma which keeps the debris away from primarily optical components located downstream without excessive attenuation of the desired radiation emitted from the plasma. According to the invention, this object is met in that a buffer gas is injected inside the filter structure of the debris filter lateral to openings that are provided for passing the radiation. The filter structure generates a flow resistance in direction of the plasma and in direction of propagation of the radiation so that an increased gas pressure of buffer gas remains limited to a defined volume layer in the debris filter relative to the pressure in the vacuum chamber, and the buffer gas exiting from the filter structure of the debris filter is sucked out of the vacuum chamber by vacuum pumps.
    • 本发明涉及一种用于抑制基于等离子体的短波长辐射源中的碎屑的方法和装置,特别是用于半导体光刻的EUV源。 本发明的目的是找到一种抑制来自等离子体的颗粒流(碎屑)的新型可能性,该等离子体使碎片远离主要位于下游的光学部件,而不会从等离子体发射的期望辐射的过度衰减。 根据本发明,这个目的在于,缓冲气体被注入碎片过滤器的过滤器结构内,侧向设置用于通过辐射的开口。 过滤器结构在等离子体的方向和辐射的传播方向上产生流动阻力,使得缓冲气体的增加的气体压力相对于真空室中的压力保持限于碎屑过滤器中的限定体积层,以及 从碎屑过滤器的过滤器结构排出的缓冲气体由真空泵从真空室中抽出。
    • 33. 发明申请
    • EUV radiation source with high radiation output based on a gas discharge
    • 基于气体放电的具有高辐射输出的EUV辐射源
    • US20070045573A1
    • 2007-03-01
    • US11504957
    • 2006-08-16
    • Juergen KleinschmidtJens RinglingAlexander Geier
    • Juergen KleinschmidtJens RinglingAlexander Geier
    • G01J3/10
    • H05G2/003H05G2/005H05G2/006
    • The invention is directed to an arrangement for generating EUV radiation based on a gas discharge plasma with high radiation emission in the range between 12 nm and 14 nm. It is the object of the invention to find a novel possibility for plasma-based radiation generation with high radiation output in the EUV spectral region (between 12 nm and 14 nm) which makes it possible to use tin as a work medium in EUV gas discharge sources for industrial applications. This object is met, according to the invention, in that a gas preparation unit is provided for defined control of the temperature and pressure of a tin-containing work medium and the flow thereof into the vacuum chamber in gaseous state. At least one thermally insulated reservoir vessel and a thermally insulated supply line are provided for transferring the gaseous tin-containing work medium from the gas preparation unit to the pre-ionization unit located inside the electrode housing.
    • 本发明涉及一种基于具有12nm至14nm范围内的高辐射发射的气体放电等离子体产生EUV辐射的装置。 本发明的目的是在EUV光谱区(12nm和14nm)之间找到具有高辐射输出的等离子体辐射产生的新颖可能性,这使得可以使用锡作为EUV气体放电中的工作介质 工业应用来源。 根据本发明,满足本发明的目的在于提供一种气体制备单元,用于限定含锡工作介质的温度和压力及其在气态下进入真空室的流量。 提供至少一个隔热储存器容器和绝热供应管线,用于将气态含锡工作介质从气体制备单元转移到位于电极壳体内的预电离单元。
    • 36. 发明授权
    • Molecular fluorine laser
    • 分子氟激光
    • US06678291B2
    • 2004-01-13
    • US09738849
    • 2000-12-15
    • Klaus Wolfgang VoglerJuergen Kleinschmidt
    • Klaus Wolfgang VoglerJuergen Kleinschmidt
    • H01S313
    • H01S3/036G02B5/1814G02B5/1838H01S3/0315H01S3/038H01S3/08004H01S3/08009H01S3/08031H01S3/08059H01S3/0809H01S3/0971H01S3/1055H01S3/137H01S3/225H01S3/2258
    • An efficient F2 laser is provided with improvements in line selection, monitoring capabilities, alignment stabilization, performance at high repetition rates and polarization characteristics. Line selection is preferably provided by a transmission grating or a grism. The grating or grism preferably outcouples the laser beam. The line selection may be fully provided at the front optics module. A monitor grating and an array detector monitor the intensity of the selected (and unselected) lines for line selection control. An energy detector is enclosed in an inert gas purged environment at slight overpressure. A blue or green reference beam is used for F2 laser beam alignment stabilization and/or spectral monitoring of the output laser beam. The blue or green reference beam advantageously is not reflected out with a atomic fluorine red emission of the laser and is easily resolved from the red emission. The clearing ratio of the laser gas flow through the discharge area is reduced by narrowing the discharge width using improved laser electrodes and/or by increasing the gas flow rate through the discharge while maintaining uniformity by using a more aerodynamic discharge chamber. The F2 laser beam is substantially polarized, e.g., 98% or better, using at least one intracavity polarization element preferably in combination with Brewster discharge chamber windows.
    • 提供高效的F2激光器,具有线路选择,监视功能,对准稳定性,高重复率性能和极化特性的改进。 线选择优选地由透射光栅或棱镜提供。 光栅或棱镜优选地将激光束输出耦合。 线路选择可以完全提供在前光学模块。 监视器光栅和阵列检测器监视所选(和未选择)线的强度用于线选择控制。 一个能量检测器被封闭在惰性气体吹扫的环境中,轻微的超压。 使用蓝色或绿色参考光束进行F2激光束对准稳定和/或输出激光束的光谱监测。 蓝色或绿色参考光束有利地不被激光的原子氟红色发射反射,并且容易地从红色发射中消除。 通过使用改进的激光电极使放电宽度变窄并且/或通过增加通过放电的气体流量而减小激光气体流过放电区域的清除率,同时通过使用更多的空气动力学放电室来保持均匀性。 使用至少一个腔内偏振元件,优选与布鲁斯特放电室窗口组合,F2激光束基本上被极化,例如98%或更好。
    • 38. 发明授权
    • Excimer laser with line narrowing
    • 准分子激光线变窄
    • US06476987B1
    • 2002-11-05
    • US09629256
    • 2000-07-31
    • Juergen KleinschmidtPeter HeistMatthias Kramer
    • Juergen KleinschmidtPeter HeistMatthias Kramer
    • G02B504
    • G02B5/04H01S3/0811H01S3/223H01S3/225
    • A line narrowing unit for use within an excimer or molecular fluorine laser resonator includes a dispersive prism having antireflection coatings on entrance and exit surfaces. Entrance and exit angles and an apex angle are increased to enhance the dispersive power of the prism, while the antireflective coatings limit reflective losses. Preferably, a laser beam makes a non-symmetric pass through said prism. The apex angle is preferably greater than 65°, or even 75°, and the angle of incidence and the exit angle of the beam are each preferably greater than 65°. A beam expanding prism configured for enhanced beam expansion has an apex angle between within a range of 37.5° and 42.5°, and a beam incidence angle at the entrance surface of more than 65°, and an antireflection coating on preferably both the entrance and exit surfaces.
    • 在准分子或分子氟激光谐振器内使用的线窄化单元包括在入射和出射表面上具有抗反射涂层的分散棱镜。 增加出入角和顶角以增强棱镜的分散力,而抗反射涂层则限制了反射损耗。 优选地,激光束使不对称通过所述棱镜。 顶角优选大于65°或甚至75°,并且梁的入射角和出射角各自优选地大于65°。 配置用于增强光束膨胀的光束扩张棱镜具有在37.5°和42.5°之间的范围内的顶角和大于65°的入射面处的光束入射角,并且优选地,入射和出射两者的抗反射涂层 表面。
    • 39. 发明授权
    • Arrangement for generating EUV radiation
    • 产生EUV辐射的安排
    • US09170505B2
    • 2015-10-27
    • US12254272
    • 2008-10-20
    • Vladimir KorobochkoJuergen Kleinschmidt
    • Vladimir KorobochkoJuergen Kleinschmidt
    • H05G2/00G03F7/20
    • G03F7/70916G03F7/70033G03F7/70083H05G2/003
    • The invention is directed to an arrangement for generating EUV radiation particularly for source modules in exposure installations for EUV lithography for semiconductor chip fabrication. The object of the invention, to find a novel possibility for realizing an EUV source module which appreciably improves the ratio of resources to results in the transfer of radiation from the primary source location (plasma 3) to the secondary source location (output opening (6) of the source module (1)/intermediate focus plane (62)), is met according to the invention in that the plasma (3) is formed as a volume emitter for direct illumination of the output opening (6) without collector optics (5), and the transverse dimension (d) of the plasma (3) is greater than the diameter (D) of the output opening (6), wherein the extent to which the diameter is exceeded depends on the distance (L) between the plasma (3) and the output opening (6) and on the numerical aperture (NA) of the illumination system downstream.
    • 本发明涉及一种用于产生EUV辐射的装置,特别是用于用于半导体芯片制造的EUV光刻的曝光装置中的源模块。 本发明的目的是找到一种实现EUV源模块的新型可能性,其明显地改善了资源的比例,导致辐射从主源位置(等离子体3)到次级源位置(输出开口6 )源于根据本发明的源模块(1)/中间聚焦平面(62)),其中等离子体(3)形成为用于直接照射输出开口(6)的体积发射器,而没有集光器光学器件 5),等离子体(3)的横向尺寸(d)大于输出开口(6)的直径(D),其中直径超过的范围取决于两者之间的距离(L) 等离子体(3)和输出开口(6)以及下游照明系统的数值孔径(NA)。