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31. 发明授权

US08237282B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08237282B2
公开(公告)日：2012-08-07
申请号：US13030861
申请日：2011-02-18
申请人： Takashi Okuda , Yasuo Morimoto , Yuko Maruyama , Toshio Kumamoto
发明人： Takashi Okuda , Yasuo Morimoto , Yuko Maruyama , Toshio Kumamoto
IPC分类号： H01L23/522
CPC分类号： H01L23/5223 , H01L23/5225 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.
摘要翻译：半导体器件包括：包括主表面的半导体衬底; 多个第一互连形成在形成在主表面上并沿预定方向延伸的电容形成区域中; 多个第二互连，每个相邻于位于电容形成区域的边缘处的第一互连，沿预定方向延伸并具有固定电位; 以及绝缘层，形成在主表面上，并且填充在每个第一互连之间以及第一互连和第二互连之间相邻。第一互连和第二互连在平行于主表面的平面中以基本相等的间隔定位，并且被定位成在基本上垂直于预定方向的方向上对齐。

32. 发明申请

US20110092744A1 PROCESS FOR PRODUCING BISPHENOL A 有权
标题翻译：生产双酚A的方法
公开(公告)号：US20110092744A1
公开(公告)日：2011-04-21
申请号：US12981133
申请日：2010-12-29
申请人： Takashi TERAJIMA , Yuko Maruyama , Toshihiro Takai , Kenji Fujiwara
发明人： Takashi TERAJIMA , Yuko Maruyama , Toshihiro Takai , Kenji Fujiwara
IPC分类号： C07C39/16
CPC分类号： C07C39/16 , B01J31/10 , B01J2231/347 , C07C37/20 , C08F8/32 , C08F8/36 , C08F12/08 , C08F212/08
摘要： The present invention provides a process for producing bisphenol A by reacting phenol with actone, wherein reaction is performed at higher temperatures while maintaining high selectivity, and thus high productivity is obtained. The invention relates to a cation-exchange resin, wherein a cation-exchange group is introduced into a syndiotactic polystyrene polymer and the amount of acid is 0.8 milliequivalent/g or more, to a catalyst comprising the cation-exchange resin, and to a process for producing bisphenol A using a cation-exchange resin catalyst.
摘要翻译：本发明提供了一种通过使酚与活性苯酚反应生产双酚A的方法，其中反应在较高温度下进行，同时保持高选择性，从而获得高生产率。本发明涉及一种阳离子交换树脂，其中将阳离子交换基团引入间同立构聚苯乙烯聚合物中，并且酸的量为0.8毫当量/ g或更高，对于包含阳离子交换树脂的催化剂以及一种方法用于使用阳离子交换树脂催化剂生产双酚A.

33. 发明申请

US20090250788A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090250788A1
公开(公告)日：2009-10-08
申请号：US12485528
申请日：2009-06-16
申请人： Takashi OKUDA , Yasuo Morimoto , Yuko Maruyama , Toshio Kumamoto
发明人： Takashi OKUDA , Yasuo Morimoto , Yuko Maruyama , Toshio Kumamoto
IPC分类号： H01L29/00
CPC分类号： H01L23/5223 , H01L23/5225 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction, a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.
摘要翻译：半导体器件包括：包括主表面的半导体衬底; 形成在主表面上并沿预定方向延伸的电容形成区域中的多个第一互连，多个第二互连，每个第二互连相邻于位于电容形成区域边缘的第一互连件，沿预定方向延伸; 并具有固定的潜力; 以及绝缘层，形成在主表面上，并且填充在每个第一互连之间以及第一互连和第二互连之间相邻。第一互连和第二互连在平行于主表面的平面中以基本相等的间隔定位，并且被定位成在基本上垂直于预定方向的方向上对齐。

34. 发明授权

US07446390B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07446390B2
公开(公告)日：2008-11-04
申请号：US11845348
申请日：2007-08-27
申请人： Takashi Okuda , Yasuo Morimoto , Yuko Maruyama , Toshio Kumamoto
发明人： Takashi Okuda , Yasuo Morimoto , Yuko Maruyama , Toshio Kumamoto
IPC分类号： H01L29/00
CPC分类号： H01L23/5223 , H01L23/5225 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.
摘要翻译：半导体器件包括：包括主表面的半导体衬底; 多个第一互连形成在形成在主表面上并沿预定方向延伸的电容形成区域中; 多个第二互连，每个相邻于位于电容形成区域的边缘处的第一互连，沿预定方向延伸并具有固定电位; 以及绝缘层，形成在主表面上，并且填充在每个第一互连之间以及第一互连和第二互连之间相邻。第一互连和第二互连在平行于主表面的平面中以基本相等的间隔定位，并且被定位成在基本上垂直于预定方向的方向上对齐。

35. 发明申请

US20080001255A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080001255A1
公开(公告)日：2008-01-03
申请号：US11845348
申请日：2007-08-27
申请人： Takashi OKUDA , Yasuo Morimoto , Yuko Maruyama , Toshio Kumamoto
发明人： Takashi OKUDA , Yasuo Morimoto , Yuko Maruyama , Toshio Kumamoto
IPC分类号： H01L29/00
CPC分类号： H01L23/5223 , H01L23/5225 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.
摘要翻译：半导体器件包括：包括主表面的半导体衬底; 多个第一互连形成在形成在主表面上并沿预定方向延伸的电容形成区域中; 多个第二互连，每个相邻于位于电容形成区域的边缘处的第一互连，沿预定方向延伸并具有固定电位; 以及绝缘层，形成在主表面上，并且填充在每个第一互连之间以及第一互连和第二互连之间相邻。第一互连和第二互连在平行于主表面的平面中以基本相等的间隔定位，并且被定位成在基本上垂直于预定方向的方向上对齐。

36. 发明申请

US20070073091A1 Process for producing bisphenol a 审中-公开
标题翻译：生产双酚A的方法
公开(公告)号：US20070073091A1
公开(公告)日：2007-03-29
申请号：US10571134
申请日：2004-09-01
申请人： Takashi Terajima , Yuko Maruyama , Toshihiro Takai , Kenji Fujiwara
发明人： Takashi Terajima , Yuko Maruyama , Toshihiro Takai , Kenji Fujiwara
IPC分类号： C07C39/16
CPC分类号： C07C39/16 , B01J31/10 , B01J2231/347 , C07C37/20 , C08F8/32 , C08F8/36 , C08F12/08 , C08F212/08
摘要： The present invention provides a process for producing bisphenol A by reacting phenol with acetone, wherein reaction is performed at higher temperatures while maintaining high selectivity, and thus high productivity is obtained. The invention relates to a cation-exchange resin, wherein a cation-exchange group is introduced into a syndiotactic polystyrene polymer and the amount of acid is 0.8 milliequivalent/g or more, to a catalyst comprising the cation-exchange resin, and to a process for producing bisphenol A using the cation-exchange resin catalyst.
摘要翻译：本发明提供一种通过苯酚与丙酮反应生产双酚A的方法，其中反应在较高温度下进行，同时保持高选择性，从而获得高生产率。本发明涉及一种阳离子交换树脂，其中将阳离子交换基团引入间同立构聚苯乙烯聚合物中，并且酸的量为0.8毫当量/ g或更多，对于包含阳离子交换树脂的催化剂以及一种方法用于使用阳离子交换树脂催化剂生产双酚A.

37. 发明授权

US06407573B1 Device for evaluating characteristic of insulated gate transistor 失效
标题翻译：绝缘栅晶体管特性评估装置
公开(公告)号：US06407573B1
公开(公告)日：2002-06-18
申请号：US09238887
申请日：1999-01-28
申请人： Kenji Yamaguchi , Hiroyuki Amishiro , Yuko Maruyama
发明人： Kenji Yamaguchi , Hiroyuki Amishiro , Yuko Maruyama
IPC分类号： G01R3126
CPC分类号： G01R31/2621 , H01L2924/0002 , H01L2924/00
摘要： A transistor having a longer channel length and serving as a reference, and a transistor having a shorter channel length and to be subjected to effective channel length extraction are prepared (step ST1.1). A hypothetical point at which a change in a total drain-to-source resistance is estimated to be approximately zero when a gate overdrive is slightly changed is extracted in a mask channel length versus total drain-to-source resistance plane. The values of a function (F) are calculated which are defined by the difference between the rate of change in the total drain-to-source resistance and the product of a channel resistance per unit length and the rate of change in a mask channel length at the hypothetical points (step ST1.6). A true threshold voltage of the transistor having the shorter channel length is determined by a shift amount (&dgr;) which minimizes the standard deviation of the function (F) determined in the step ST1.7 (step ST1.10). A resistance-based method thus extracts an effective channel length and a series resistance with increased accuracy.
摘要翻译：制备具有较长沟道长度并用作基准的晶体管，以及具有较短沟道长度并经受有效沟道长度提取的晶体管（步骤ST1.1）。当栅极过驱动略微改变时，估计总漏极 - 源极电阻的变化大致为零的假想点，掩模沟道长度对总漏极 - 源极电阻平面提取。计算函数（F）的值，其由总漏极 - 源极电阻的变化率与每单位长度的沟道电阻的乘积与掩模沟道长度的变化率之间的差定义在假想点（步骤ST1.6）。具有较短信道长度的晶体管的真实阈值电压由步骤ST1.7中确定的函数（F）的标准偏差最小化的移位量（delta）确定（步骤ST1.10）。因此，基于电阻的方法提高了精确度的有效通道长度和串联电阻。

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