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31. 发明授权

US08754457B2 Photoelectric conversion device and electronic device provided with the photoelectric conversion device 有权
标题翻译：配备有光电转换装置的光电转换装置和电子装置
公开(公告)号：US08754457B2
公开(公告)日：2014-06-17
申请号：US13401886
申请日：2012-02-22
申请人： Makoto Yanagisawa , Atsushi Hirose
发明人： Makoto Yanagisawa , Atsushi Hirose
IPC分类号： H01L31/105 , H01L31/102
CPC分类号： H04N5/35518 , G01J1/4204 , G01J1/44 , H01L27/14609
摘要： An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.
摘要翻译：包括在光电转换装置中的光电转换元件的输出端子连接到二极管连接的MOS晶体管的漏极端子和栅极端子，并且在MOS晶体管的栅极端子处产生的电压Vout被检测到根据在光电转换元件处产生的电流Ip。可以直接检测在MOS晶体管的栅极端子处产生的电压Vout，使得可以比通过连接负载电阻器将输出电压转换为电流的方法等等来扩大输出范围。

32. 发明授权

US08502131B2 Color sensor and electronic device having the same 有权
标题翻译：彩色传感器和具有相同的电子设备
公开(公告)号：US08502131B2
公开(公告)日：2013-08-06
申请号：US12498662
申请日：2009-07-07
申请人： Atsushi Hirose
发明人： Atsushi Hirose
IPC分类号： H01J40/14
CPC分类号： G01N21/255 , G09G3/3406 , G09G3/3413 , G09G2320/0626 , G09G2320/0666 , G09G2360/144 , G09G2360/145 , H01L27/144 , H01L27/14621 , H01L27/14623 , H01L27/14685
摘要： A color sensor with a plurality of optical sensors in which the number of terminals for connection with the outside can be reduced. The color sensor includes a plurality of optical sensors each provided with a photoelectric conversion element and an optical filter over a light-transmitting substrate. The optical filters in the plurality of optical sensors have light-transmitting characteristics different from each other. The plurality of optical sensors is mounted over an interposer including a plurality of terminal electrodes for electrical connection with an external device. The interposer includes a wiring having a plurality of branches for electrical connection between the terminal electrode for inputting a high power supply potential to the plurality of optical sensors and a wiring having a plurality of branches for electrical connection between the terminal electrode for inputting a low power supply potential to the plurality of optical sensors.
摘要翻译：具有多个光学传感器的颜色传感器，其中可以减少与外部连接的端子的数量。颜色传感器包括多个光学传感器，每个光传感器在光透射基板上设置有光电转换元件和滤光器。多个光学传感器中的滤光器具有彼此不同的透光特性。多个光学传感器安装在包括用于与外部设备电连接的多个端子电极的插入器上。插入器包括具有多个分支的布线，用于在用于向多个光学传感器输入高电源电位的端子电极之间进行电连接;以及布线，具有用于在用于输入低功率的端子电极之间进行电连接的多个分支向多个光学传感器供应电位。

33. 发明授权

US08486804B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08486804B2
公开(公告)日：2013-07-16
申请号：US11928912
申请日：2007-10-30
申请人： Shunpei Yamazaki , Masahiro Katayama , Yoshiaki Oikawa , Atsushi Hirose , Masayuki Sakakura
发明人： Shunpei Yamazaki , Masahiro Katayama , Yoshiaki Oikawa , Atsushi Hirose , Masayuki Sakakura
IPC分类号： H01L21/302
CPC分类号： H01L27/1443 , H01L27/1214 , H01L27/1266 , H01L31/02005 , H01L31/02162 , H01L31/022408 , H01L31/02327 , H01L31/1055 , H01L31/1892 , H01M10/46 , H03F3/08 , Y02E10/50
摘要： A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.
摘要翻译：一种半导体器件，包括在第一绝缘膜上包括光电二极管的第一元件和放大光电二极管的输出电流的放大器电路; 并且制造在第二绝缘膜上的在滤色器上方包括滤色器和外涂层的第二元件。第一元件和第二元件通过用接合材料接合第一绝缘膜和第二绝缘膜而彼此附接。此外，放大器电路是包括薄膜晶体管的电流镜电路。此外，可以使用彩色胶片代替滤色器。

34. 发明授权

US08242837B2 Analog circuit and semiconductor device 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US08242837B2
公开(公告)日：2012-08-14
申请号：US12907559
申请日：2010-10-19
申请人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L25/00
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

35. 发明授权

US08124924B2 Photoelectric conversion device and electronic device provided with the photoelectric conversion device 有权
标题翻译：配备有光电转换装置的光电转换装置和电子装置
公开(公告)号：US08124924B2
公开(公告)日：2012-02-28
申请号：US12794820
申请日：2010-06-07
申请人： Makoto Yanagisawa , Atsushi Hirose
发明人： Makoto Yanagisawa , Atsushi Hirose
IPC分类号： H03F3/08 , H01L31/105 , H01L31/102
CPC分类号： H04N5/35518 , G01J1/4204 , G01J1/44 , H01L27/14609
摘要： An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.
摘要翻译：包括在光电转换装置中的光电转换元件的输出端子连接到二极管连接的MOS晶体管的漏极端子和栅极端子，并且在MOS晶体管的栅极端子处产生的电压Vout被检测到根据在光电转换元件处产生的电流Ip。可以直接检测在MOS晶体管的栅极端子处产生的电压Vout，使得可以比通过连接负载电阻器将输出电压转换为电流的方法等等来扩大输出范围。

36. 发明授权

US08053717B2 Photoelectric conversion device having a reference voltage generation circuit with a resistor and a second diode element and electronic device having the same 有权
标题翻译：具有具有电阻器和第二二极管元件的参考电压产生电路的光电转换装置和具有该参考电压产生电路的电子装置
公开(公告)号：US08053717B2
公开(公告)日：2011-11-08
申请号：US12465335
申请日：2009-05-13
申请人： Jun Koyama , Atsushi Hirose
发明人： Jun Koyama , Atsushi Hirose
IPC分类号： H01J40/14
CPC分类号： H03F3/08
摘要： The photoelectric conversion device includes a photoelectric conversion circuit for outputting photocurrent generated in a photoelectric conversion element as output voltage subjected to logarithmic compression by a first diode element, a reference voltage generation circuit for outputting reference voltage subjected to logarithmic compression by a second diode element in accordance with the amount of current flowing to a resistor, an arithmetic circuit for outputting an output signal obtained by amplifying a difference between the output voltage output from the photoelectric conversion circuit and the reference voltage output from the reference voltage generation circuit, and an output circuit for outputting current corresponding to the logarithmically-compressed output voltage output from the photoelectric conversion circuit by the output signal.
摘要翻译：光电转换装置包括用于输出在光电转换元件中产生的光电流作为由第一二极管元件进行对数压缩的输出电压的光电转换电路，用于输出由第二二极管元件进行对数压缩的参考电压的参考电压产生电路根据流向电阻器的电流量，输出通过放大从光电转换电路输出的输出电压与从基准电压产生电路输出的参考电压之间的差而获得的输出信号的运算电路，以及输出电路用于输出与通过输出信号从光电转换电路输出的对数压缩输出电压相对应的电流。

37. 发明授权

US07759629B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07759629B2
公开(公告)日：2010-07-20
申请号：US12043640
申请日：2008-03-06
申请人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
发明人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
IPC分类号： H01L31/18
CPC分类号： H01L27/14665 , H01L27/1214 , H01L27/1266 , H01L27/14603 , H03F3/08
摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.
摘要翻译：通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。改善放大电路的输出特性，获得高可靠性的半导体器件。这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

38. 发明授权

US07671320B2 Electronic device comprising a first and second photodiode wherein a reference potential is supplied to the first photodiode 有权
标题翻译：电子器件包括第一和第二光电二极管，其中参考电位被提供给第一光电二极管
公开(公告)号：US07671320B2
公开(公告)日：2010-03-02
申请号：US12328978
申请日：2008-12-05
申请人： Atsushi Hirose , Tatsuya Arao
发明人： Atsushi Hirose , Tatsuya Arao
IPC分类号： H01L31/00
CPC分类号： H01L27/1443 , G01J1/1626 , G01J1/4228 , G01J1/44
摘要： The semiconductor device includes a first photodiode, a second photodiode which is shielded from light, a first circuit group including a voltage follower circuit, a second circuit group, and a compensation circuit, in which an output from the first photodiode is inputted to the voltage follower circuit of the first circuit group, an output from the first circuit group is inputted to the compensation circuit, and an output from the second photodiode is inputted to the compensation circuit through the second circuit group. By adding or subtracting these inputs in the compensation circuit, an output fluctuation due to temperature of the first photodiode is removed. Note that a reference potential is supplied to the first photodiode so that an open circuit voltage is outputted, and a potential is supplied to the second photodiode so that a forward bias is applied to the second photodiode.
摘要翻译：半导体器件包括第一光电二极管，屏蔽光的第二光电二极管，包括电压跟随器电路，第二电路组和补偿电路的第一电路组，其中第一光电二极管的输出被输入到电压第一电路组的跟随器电路，第一电路组的输出被输入到补偿电路，并且来自第二光电二极管的输出通过第二电路组输入到补偿电路。通过在补偿电路中增加或减去这些输入，消除由于第一光电二极管的温度引起的输出波动。注意，参考电位被提供给第一光电二极管，使得输出开路电压，并且向第二光电二极管提供电位，使得正向偏压被施加到第二光电二极管。

39. 发明授权

US07485838B2 Semiconductor device comprising a photoelectric current amplifier 有权
标题翻译：半导体器件包括光电放大器
公开(公告)号：US07485838B2
公开(公告)日：2009-02-03
申请号：US11491507
申请日：2006-07-24
申请人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
发明人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
IPC分类号： H03F3/08 , H03F3/04
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

40. 发明申请

US20080230682A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20080230682A1
公开(公告)日：2008-09-25
申请号：US12043640
申请日：2008-03-06
申请人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
发明人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
IPC分类号： H03F3/08 , H01L31/18
CPC分类号： H01L27/14665 , H01L27/1214 , H01L27/1266 , H01L27/14603 , H03F3/08
摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.
摘要翻译：通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。改善放大电路的输出特性，获得高可靠性的半导体器件。这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

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